2SD1898 / 2SD1733 / 2SD1768S / 2SD1863

Transistors

Power Transistor (80V, 1A)

2SD1898 / 2SD1733 / 2SD1768S / 2SD1863

!Features !External dimensions (Unit : mm)

1) High VCEO, VCEO=80V 2SD1898
2) High IC, IC=1A (DC) 4.5+0.2

0.5±0.1
−0.1
1.5 +0.2
3) Good hFE linearity 1.6±0.1 −0.1

4) Low VCE (sat)

4.0±0.3
2.5+0.2
−0.1
5) Complements the 2SB1260 / (1) (2) (3)
0.4+0.1
−0.05
2SB1241 / 2SB1181

1.0±0.2
0.4±0.1 0.5±0.1 0.4±0.1
1.5±0.1 1.5±0.1
3.0±0.2

(1) Base
ROHM : MPT3 (2) Collector
EIAJ : SC-62
!Structure (3) Emitter
Abbreviated symbol : DF
Epitaxial planer type
2SD1733 2SD1768S
NPN silicon transistor
4±0.2 2±0.2

6.5±0.2 2.3+−0.2
1.5±0.3

0.1

3±0.2
C0.5
5.1+−0.2
0.1 0.5±0.1

3Min.
0.1
5.5+−0.3

(15Min.)
9.5±0.5
0.9

1.5

0.45+0.15
−0.05
2.5

0.75 0.65±0.1
0.9
0.55±0.1 2.5 +0.4
−0.1 0.5 0.45 +0.15
−0.05
2.3±0.2 2.3±0.2 1.0±0.2 5

(1) (2) (3)

(1) (2) (3)

Taping specifications

ROHM : CPT3 (1) Base ROHM : SPT (1) Emitter

EIAJ : SC-63 (2) Collector EIAJ : SC-72 (2) Collector
(3) Emitter (3) Base

2SD1863

6.8±0.2 2.5±0.2
4.4±0.2
0.9
1.0

0.65Max.
14.5±0.5

0.5±0.1

(1) (2) (3)

2.54 2.54
1.05 0.45±0.1

Taping specifications

(1) Emitter
(2) Collector
ROHM : ATV (3) Base

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 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors

!Absolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 120 V
Collector-emitter voltage VCEO 80 V
Emitter-base voltage VEBO 5 V
1 A (DC)
Collector current IC
2 A (Pulse) ∗1
0.5 W
2SD1898
2 W ∗3

Collector power 1 W
2SD1733 PC
dissipation 10 W (Tc=25°C)
2SD1768S 0.3 W
2SD1863 1 W ∗2
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C
∗1 Pw=20ms, duty=1 / 2
∗2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger.
∗3 When mounted on a 40×40×0.7mm ceramic board.

!Electrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 120 − − V IC=50µA
Collector-emitter breakdown voltage BVCEO 80 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA
Collector cutoff current ICBO − − 1 µA VCB=100V
Emitter cutoff current IEBO − − 1 µA VEB=4V
2SD1863 120 − 390 −
DC current
2SD1733, 2SD1898 hFE 82 − 390 − VCE=3V, IC=0.5A ∗
transfer ratio
2SD1768S 120 − 390 −
Collector-emitter saturation voltage VCE(sat) − 0.15 0.4 V IC/IB=500mA/20mA
Transition frequency fT − 100 − MHz VCE=10V, IE=−50mA, f=100MHz
Output capacitance Cob − 20 − pF VCB=10V, IE=0A, f=1MHz
∗ Measured using pulse current

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 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors

!Packaging specifications and hFE

Package Taping
Code T100 TL TP TV2
Type hFE Basic ordering unit (pieces) 1000 2500 5000 2500
2SD1898 PQR − − −
2SD1733 PQR − − −
2SD1768S QR − − −
2SD1863 R − − −

hFE values are classified as follows :

Item P Q R
hFE 82~180 120~270 180~390

!Electrical characteristic curves

1000 Ta=25°C Ta=25°C Ta=25°C
VCE=5V
COLLECTOR CURRENT : IC (mA)

COLLECTOR CURRENT : IC (A)

1.0 6mA

DC CURRENT GAIN : hFE

100 5mA
0.8 4mA 1000

3mA VCE=3V
10 0.6
1V
2mA
0.4 100
1 1mA
0.2

0 IB=0mA 0
0.1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 2 4 6 8 10 0 10 100 1000

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 DC current gain vs.
characteristics characteristics collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

Ta=25°C 1000
Ta=25°C Ta=25°C
TRANSITION FREQUENCY : fT (MHz)

COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

: Cib (pF)

500 VCE=5V f=1MHz

IE=0A
200 Ic=0A
2.0
100 100
1.0
EMITTER INPUT CAPACITANCE

50
0.5
20
0.2
IC/IB=20/1 10 10
0.1
10/1 5
0.05
2
0.02
1
0.01 1 2 5 10 20 50 100 200 500 1000 0.1 0.2 0.5 1 2 5 10 20 50 100
0 10 100 1000
EMITTER CURRENT : −IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V)
COLLECTOR CURRENT : IC (mA) EMITTER TO BASE VOLTAGE : VEB (V)

Fig.5 Gain bandwidth product vs. Fig.6 Collector output capacitance vs.
Fig.4 Collector-emitter saturation collector-base voltage
emitter current
voltage vs. collector current Emitter input capacitance vs.
emitter-base voltage

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 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors

10 10
Ta=25°C Ta=25°C
5 Single 5 Single
Ic Max (Pulse) non-repetitive Ic Max (Pulse) non-repetitive
COLLECTOR CURRENT : IC (A)

COLLECTOR CURRENT : IC (A)

2 2
Pw pulse pulse

Pw
DC DC
1 =1 1
Pw

=1
Pw
0m
=1

0
500m

=1
500m

m
S
00

S
0m
m

200m 200m
S

S
100m 100m
50m 50m
20m 20m
10m 10m
5m 5m
2m 2m
1m 1m
0.1 0.2 0.5 1 2 5 10 20 50100 200 5001000 0.1 0.2 0.5 1 2 5 10 20 50100200 5001000

COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.7 Safe operating area Fig.8 Safe operating area

(2SD1863) (2SD1898)

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Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.0
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