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SE1 2019final 0610a Solution

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29 views2 pages

SE1 2019final 0610a Solution

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vkdldj339
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Semiconductor Engineering 1 Final (2019/06/10) 이종창 교수

1.(30points) One curve of an n-channel MOSFET is characterized by the following parameters:


IDS(sat)=0.1mA, VG=1V, and VT=0.2V.
① What is the saturation Drain-to-Source Voltage VDS(sat)?
VDS  sat.  VGS  VT  1V  0.2V  0.8V

② If VG =2V and VDS =1V, determine IDS and the transconductance.


0.1mA
I DS , sat  K n VGS  VT   K n 
2
 0.1562mS/V
0.82
I DS ,linear  K n  2 VGS  VT  VDS  VDS
2 
 0.1562  2  2  0.2   1  12   0.4062mA
   
g m  linear   K n  2  VGS  VT  VDS   0.1562  2   2  0.2  1  0.2499mS
③ If VG =2V and VDS =2V, determine IDS and the transconductance.
2
I DS  K n VGS  VT   0.1562  2  0.2   0.5061mA
2

g m  sat.  K n  2  VGS  VT   0.1562  2   2  0.2   0.5623mS

2.(30points) Consider an Al gate on a p-type Si doped to NA=1016 cm-3. Assume Qss’=1011 cm-2, the
oxide thickness is tox=20nm, ox = 3.9o and Si = 11.7o. ms is as shown. kT/q = 0.026 V and ni =
1.5  1010 cm-3 at 300K.
① Calculate the Threshold voltage VT.
  max 
QSD Q
VT   ss  ms  2 FP
Cox Cox
 (4.8071e-8  1.6e-8) /1.7265e-7  0.9 + 2  0.3487  0.0168V
kT  N a   1e16 
 FP   ln    0.026 ln    0.3487V
q  ni   1.5e10 
1/ 2
 4 s F 
  max   qN a xdT  qN a 
 QSD P 
 1.6e-19  1016  4  11.7  8.85e-14  0.3487  4.8071e-8[C/cm 2 ]
 qNa 
 
 ox 3.9  8.85e-14
 Cox    1.7265e  7[F/cm 2 ]
tox 20e-7
  1.6e-19  1011  1.6e-8[C/cm 2 ]
 Qss

② Calculate the Threshold voltage VT when the Source-to-Body Voltage VSB=2V.

2q s N a  
VT   2 Fp  VSB  2 Fp 
Cox  
2  1.6e-19  11.7  8.85e-14  1016  
  2  0.3487  2  2  0.3487 
1.7265e-7
 0.2693V
 VT  VT 0  VT  0.0168V+0.2693V=0.2565V
③ The channel length modulation can be expressed as: 2 s 
L   Fp  VDS ,sat  VDS  Fp  VDS ,sat 
qN A  

If L=1.0m, VDS,sat=2V, VDS=5V, calculate the channel length modulation parameter .

2 s 
L   Fp  VDS ,sat  VDS  Fp  VDS ,sat 
qN A  

2  11.7  8.85e-14 
 16
  0.3487  2  3  0.3487  2 
1.6e-19  10
 2.8068e-5[cm]
L 2.8068e-5
    0.0561[V 1 ]
L  VDS 1e-4  5
3.(40points) An n-channel MOSFET has the following parameters: tox=20nm, ox=3.9o, n=8500
cm2/V  s, L=0.1m, W=1m, rs=1rd=0, VT=0.2V, RL=50Assume that CgsT=(2/3)CoxWL and
CgdT=(1/3) CoxWL, and the transistor is biased in the saturation region at VGS=1V.
① Plot the small-signal equivalent circuit.

② Calculate the transconductance, gm(sat).


W n Cox
g m  sat.  VGS  VT 
L
1 104  8500 3.9  8.85e-14
   1  0.2   0.0117[S] = 11.7[mS]
0.1 104 20e-7
③ Calculate the low frequency voltage gain, Av=vds/vgs.

V  gm  0.0117
Avs  ds   g m  rds  RL      RL  50   0.5782
Vgs  1  g m rs  1  0.0117  1

④ Calculate the cut-off frequency fT.

gm 0.0117 0.0117
fT   

2 C gsT  C gdT 
2  (Cox  W  L) 2 ( 3.9  8.85e-14  1e-4  0.1e-4)
20e-7
 1.0785e13  10.7[THz]

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