7MBI40N-120 IGBT Modules
IGBT MODULE (N-series)
1200V / 40A (7 in one-package)
Features
· High Speed Switching
· Voltage Drive
· Low Inductance Module Structure
· Dynamic Brake Circuit
Applications
· Inverter for Motor Drive
· AC and DC Servo Drive Amplifier
· Uninterruptible Power Supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless without specified)
Item Symbol Condition Rating Unit
Collector-Emitter voltage
VCES 1200 V
Inverter(IGBT)
Gate-Emitter voltage VGES ±20 V
DC IC 40 A
Collector current 1ms ICP 80 A
DC -IC 40 A
Collector power disspation 1 device PC 320 W
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Brake(IGBT+FWD)
Collector current DC IC 15 A
1ms ICP 30 A
Collector power disspation 1 device PC 120 W
Repetitive peak reverse voltage V RRM 1200 V
Average forward current IF(AV) 1 A
Surge current IFSM 10ms 50 A
Operating junction temperature Tj +150 °C
Storage temperature Tstg -40 to +125 °C
Isolation voltage Viso AC : 1 minute AC 2500 V
Mounting screw torque Mounting*1 3.5 N·m
Terminal*1 3.5
*1 Recommendable value : 2.5 to 3.5 N·m
IGBT Module 7MBI40N-120
Electrical characteristics (Tj=25°C unless without specified)
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Zero gate voltage collector current ICES Tj=25°C, VCE=1200V, VGE=0V 3.0 mA
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 15 µA
Inverter (IGBT)
Gate-Emitter threshold voltage VGE(th) VCE=20V, IC=40mA 4.5 7.5 V
Collector-Emitter saturation voltage VCE(sat) VGE=15V, Ic=40A 3.3 V
Collector-Emitter voltage -V CE -Ic=40A 3.0 V
Input capacitance Cies VGE=0V, VCE=10V, f=1MHz 6200 pF
Switching time ton V CC =600V 1.2 µs
toff IC=40A 1.5 µs
tf VGE=±15V, RG=24 ohm 0.5 µs
Reverse recovery time of FRD trr IF=40A,VGE=-10V,-di/dt=120A/µs 350 ns
Zero gate voltage collector current ICES VCES=1200V, VGE=0V 1.0 mA
Brake (IGBT)
Gate-Emitter leakage current IGES VCE=0V, VGE=±20V 100 nA
Collector-Emitter saturation voltage VCE(sat) IC=15A, VGE=15V 3.3 V
Switching time ton V CC =600V 1.2 µs
toff IC=15A 1.5 µs
tf VGE=±15V, RG=82ohm 0.5 µs
Reverse current IRRM V R=V RRM 1.0 mA
Brake
(FWD)
Reverse recovery time trr 600 ns
Thermal Characteristics
Item Symbol Condition Characteristics Unit
Min. Typ. Max.
Inverter IGBT 0.39
Inverter FRD 0.85
Thermal resistance ( 1 device ) Rth(j-c)
Brake IGBT 1.04 °C/W
Contact thermal resistance * Rth(c-f) With thermal compound 0.05
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
IGBT Module 7MBI40N-120
Characteristics (Representative)
IGBT Module 7MBI40N-120
IGBT Module 7MBI40N-120
IGBT Module 7MBI40N-120
IGBT Module 7MBI40N-120
Outline Drawings, mm
