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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
 BC517 — NPN Darlington Transistor
September 2015

BC517
NPN Darlington Transistor

Features
• This device is designed for applications requiring extremely
high current gain at currents to 1.0 A.
• Sourced from process 05.
TO-92
1. Collector
2. Base
12 1 3. Emitter
3 2
3
Straight Lead Bent Lead
Bulk Packing Tape & Reel
Ammo Packing

Ordering Information
Part Number Top Mark Package Packing Method
BC517_D74Z BC517 TO-92 3L (Bent Lead) Ammo

Absolute Maximum Ratings(1), (2)

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

VCEO Collector-Emitter Voltage 30 V
VCBO Collector-Base Voltage 40 V
VEBO Emitter-Base Voltage 10 V
IC Collector Current - Continuous 1.2 A
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC517 Rev. 1.1
 BC517 — NPN Darlington Transistor
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

Total Device Dissipation, TA = 25°C 625 mW
PD
Derate Above 25°C 5.0 mW/°C
RθJC Thermal Resistance, Junction-to-Case 83.3 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 200 °C/W

Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

VCEO Collector-Emitter Breakdown Voltage IC = 2.0 mA, IB = 0 30 V
VCBO Collector-Base Breakdown Voltage IC = 10 μA, IE = 0 40 V
VEBO Emitter-Base Breakdown Voltage IE = 100 nA, IC = 0 10 V
ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 100 nA
hFE DC Current Gain VCE = 2 V, IC = 20 mA 30,000
VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, IB = 0.1 mA 1 V
VBE(on) Base-Emitter On Voltage IC = 10 mA, VCE = 5.0 V 1.4 V

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC517 Rev. 1.1 2
 BC517 — NPN Darlington Transistor
Typical Performance Characteristics

VCESAT - COLLECTOR EM ITTE R VOLTAGE (V)

h F E - TYPICAL PULSED CURRENT GAIN (K)

250 1.6
VCE = 5V β = 1000
200 125 °C 1.2

150
- 40 °C
25 °C 0.8
100 25°C
125 °C
- 40 °C 0.4
50

0 0
0.001 0.01 0.1 1 1 10 100 1000
I C - COLLECTOR CURRENT (A) I C - COLLECTOR CURRE NT (mA)

Figure 1. Typical Pulsed Current Gain vs. Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current Collector Current

V BEON - BAS E EMITTER ON VOLTAGE (V)

V BESAT - BASE EMITTE R VOLTAGE (V)

2 2
β = 1000

1.6 - 40 °C 1.6 - 40 °C
25 °C 25 °C
1.2 1.2
125 °C 125 °C

0.8 0.8

VCE = 5V
0.4 0.4

0 0
1 10 100 1000 1 10 100 1000
I C - COLLECTOR CURRE NT (mA) I C - COLLECTOR CURRE NT (mA)

Figure 3. Base-Emitter Saturation Voltage vs. Figure 4. Base Emitter On Voltage vs.
Collector Current Collector Current
BVCER - BREAKDOWN VOLTAGE (V)
I CBO - COLLE CTOR CURRENT (nA)

100
62.5
VCB = 30V

62
10
61.5

1 61

60.5
0.1
60

0.01 59.5
25 50 75 100 125 0.1 1 10 100 1000
T A - AMBIE NT TEMP ERATURE ( ° C) RESISTANCE (k Ω )

Figure 5. Collector Cut-Off Current vs. Figure 6. Collector-Emitter Breakdown Voltage with
Ambient Temperature Resistance Between Emitter-Base

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC517 Rev. 1.1 3
 BC517 — NPN Darlington Transistor
Typical Performance Characteristics (Continued)

f T - GAIN BANDWIDTH PRODUCT (MHz)

500
f = 1.0 MHz
Vce = 5V
20
CAPACITANCE (pF)

400

10 300

Cib
200
5
Cob
100

2
0.1 1 10 100 0
1 10 20 50 100 150
V - COLLECTOR VOLTAGE(V) IC - COLLECTOR CURRENT (mA)

Figure 7. Input and Output Capacitance vs. Figure 8. Gain Bandwidth Product vs.
Reverse Voltage Collector Current

1
PD - POWER DISSIPATION (W)

0.75
TO-92

0.5

0.25

0
0 25 50 75 100 125 150
o
TEMPERATURE ( C)

Figure 9. Power Dissipation vs. Ambient Temperature

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC517 Rev. 1.1 4
 BC517 — NPN Darlington Transistor
Physical Dimensions

Figure 10. 3-Lead, TO-92, Molded, 0.2 In Line Spacing Lead Form, Ammo, Tape and Reel Packing

© 2005 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC517 Rev. 1.1 5
 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower¥ F-PFS¥ OPTOPLANAR®
®*
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SM
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AX-CAP®* GreenBridge¥ Power Supply WebDesigner¥ TinyBuck®

BitSiC¥ Green FPS¥ PowerTrench® TinyCalc¥
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CTL¥ ISOPLANAR¥ Quiet Series¥ TinyWire¥
Current Transfer Logic¥ Making Small Speakers Sound Louder RapidConfigure¥ TranSiC¥
DEUXPEED® and Better™ ¥ TriFault Detect¥
Dual Cool™ MegaBuck¥ TRUECURRENT®*
EcoSPARK® Saving our world, 1mW/W/kW at a time™ μSerDes¥
MICROCOUPLER¥
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® SMART START¥
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SuperSOT¥-3
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SuperSOT¥-6
FETBench¥ MVN® XS™
SuperSOT¥-8
mWSaver® Xsens™
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OptoHiT¥ ௝❺™
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OPTOLOGIC®
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WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

AUTHORIZED USE
Unless otherwise specified in this data sheet, this product is a standard commercial product and is not intended for use in applications that require extraordinary
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or other transportation, (2) military/aerospace, (3) any safety critical application – including life critical medical equipment – where the failure of the Fairchild product
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PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I76

© Fairchild Semiconductor Corporation www.fairchildsemi.com

 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.

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1
Mouser Electronics

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