AOK40B65H2AL

650V, 40A Alpha IGBT TM

With soft and fast recovery anti-parallel diode

General Description Product Summary

• Latest AlphaIGBT (α IGBT) technology VCE 650V

• 650V breakdown voltage IC (TC=100°C) 40A
• Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25°C) 2.05V
• High efficient turn-on di/dt controllability
• Very high switching speed
• Low turn-off switching loss and softness
• Very good EMI behavior

Applications

• Welding Machines
• UPS & Solar Inverters
• Very High Switching Frequency Applications

TO-247 C

E E
C
AOK40B65H2AL G

Orderable Part Number Package Type Form Minimum Order Quantity

AOK40B65H2AL TO247 Tube 240
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol AOK40B65H2AL Units
Collector-Emitter Voltage V CE 650 V
Gate-Emitter Voltage V GE ±30 V
Continuous Collector TC=25°C IC
80
A
Current TC=100°C 40
Pulsed Collector Current, Limited by TJmax I CM 120 A
Turn off SOA, VCE≤650V, Limited by TJmax I LM 60 A
Continuous Diode TC=25°C 40
IF A
Forward Current TC=100°C 20
Diode Pulsed Current, Limited by TJmax I FM 60 A
TC=25°C 260
Power Dissipation PD W
TC=100°C 105
Junction and Storage Temperature Range T J , T STG -55 to 150 °C
Maximum lead temperature for soldering
TL 300 °C
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
Parameter Symbol Typical Units
Maximum Junction-to-Ambient R θ JA 40 °C/W
Maximum IGBT Junction-to-Case R θ JC 0.48 °C/W
Maximum Diode Junction-to-Case R θ JC 1.6 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V
TJ=25°C - 2.05 2.6
V CE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=40A TJ=125°C - 2.57 - V
TJ=150°C - 2.71 -
TJ=25°C - 2.12 2.7
VF Diode Forward Voltage VGE=0V, IF=20A TJ=125°C - 2.14 - V
TJ=150°C - 2.1 -
V GE(th) Gate-Emitter Threshold Voltage VCE=5V, IC=1mA - 4.7 - V
TJ=25°C - - 10
I CES Zero Gate Voltage Collector Current VCE=650V, VGE=0V TJ=125°C - - 500 µA
TJ=150°C - - 5000
I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA
g FS Forward Transconductance VCE=20V, IC=40A - 24 - S
DYNAMIC PARAMETERS
C ies Input Capacitance - 1230 - pF
C oes Output Capacitance VGE=0V, VCC=25V, f=1MHz - 115 - pF
C res Reverse Transfer Capacitance - 44 - pF
Qg Total Gate Charge - 61 - nC
Q ge Gate to Emitter Charge VGE=15V, VCC=520V, IC=40A - 18 - nC
Q gc Gate to Collector Charge - 27 - nC
Rg Gate resistance VGE=0V, VCC=0V, f=1MHz - 11 - Ω
SWITCHING PARAMETERS, (Load Inductive, TJ=25°C)
t D(on) Turn-On DelayTime - 30 - ns
tr Turn-On Rise Time - 30 - ns
t D(off) Turn-Off Delay Time TJ=25°C - 117 - ns
tf Turn-Off Fall Time VGE=15V, VCC=400V, IC=40A, - 16 - ns
E on Turn-On Energy RG=7.5Ω - 1.17 - mJ
E off Turn-Off Energy - 0.54 - mJ
E total Total Switching Energy - 1.71 - mJ
t rr Diode Reverse Recovery Time - 315 - ns
TJ=25°C
Q rr Diode Reverse Recovery Charge - 0.7 - µC
IF=20A, dI/dt=200A/µs, VCC=400V
I rm Diode Peak Reverse Recovery Current - 4.7 - A
SWITCHING PARAMETERS, (Load Inductive, TJ=150°C)
t D(on) Turn-On DelayTime - 29 - ns
tr Turn-On Rise Time - 35 - ns
t D(off) Turn-Off Delay Time TJ=150°C - 133 - ns
tf Turn-Off Fall Time VGE=15V, VCC=400V, IC=40A, - 18 - ns
E on Turn-On Energy RG=7.5Ω - 1.27 - mJ
E off Turn-Off Energy - 0.78 - mJ
E total Total Switching Energy - 2.06 - mJ
t rr Diode Reverse Recovery Time - 413 - ns
TJ=150°C
Q rr Diode Reverse Recovery Charge - 1.2 - µC
IF=20A, dI/dt=200A/µs, VCC=400V
I rm Diode Peak Reverse Recovery Current - 5.8 - A

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

150 150
20V 20V
17V 13V 17V
120 15V 120 15V
13V
90 11V 90

IC (A)
IC (A)

11V
60 60

9V 9V
30 30
VGE= 7V
VGE=7V
0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7
VCE (V) VCE (V)
Figure 1: Output Characteristic Figure 2: Output Characteristic
(Tj=25°C) (Tj=150°C)

100 60
VCE=20V
80 50
-40°C
40
60 25°C
IC (A)

150°C
IF (A)

30
40 150°C
25°C 20

20
-40°C 10

0 0
3 6 9 12 15 0 1 2 3 4 5
VGE (V) VF (V)
Figure 3: Transfer Characteristic Figure 4: Diode Characteristic

5 3

IC=80A 40A
4 2.5

2
VCE(sat) (V)

3 20A
VF (V)

IC=40A
1.5
2 5A
1
IC=20A IF=1A
1
0.5

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
Temperature (°C) Temperature (°C)
Figure 5: Collector-Emitter Saturation Voltage vs. Figure 6: Diode Forward voltage vs. Junction
Junction Temperature Temperature

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

15 10000
VCE=520V
IC=40A
Cies
12
1000

Capacitance (pF)
9 Coes
VGE (V)

100
6
Cres
10
3

0 1
0 15 30 45 60 75 0 8 16 24 32 40
Qg (nC) VCE (V)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristic

300

Power Disspation (W) 250

200

150

100

50

0
25 50 75 100 125 150
TCASE (°C)
Figure 10: Power Disspation as a Function of Case

100 1E-02

1E-03
80
Current rating IC (A)

1E-04
60
ICE(S) (A)

VCE=650V
1E-05
40
1E-06
VCE=520V
20
1E-07

0 1E-08
25 50 75 100 125 150 0 25 50 75 100 125 150
TCASE (°C) Temperature (°C)
Figure 11: Current De-rating Figure 12: Diode Reverse Leakage Current vs.
Junction Temperature

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≤

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10000 10000
Td(off) Td(off)
Tf Tf
Td(on) Td(on)
1000 Tr 1000 Tr
Switching Time (ns)

Switching Time (ns)

100 100

10 10

1 1
20 30 40 50 60 70 80 0 15 30 45 60 75
IC (A) Rg (Ω)
Figure 13: Switching Time vs. IC Figure 14: Switching Time vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, Rg=7.5Ω) (Tj=150°C, VGE=15V, VCE=400V, IC=40A)

10000 7
Td(off)
Tf
Td(on) 6
1000 Tr
Switching Time (ns)

5
VGE(TH) (V)

100 4

3
10
2

1 1
25 50 75 100 125 150 0 25 50 75 100 125 150
TJ (°C) TJ (°C)
Figure 15: Switching Time vs.Tj Figure 16: VGE(TH) vs. Tj
(VGE=15V, VCE=400V, IC=40A, Rg=7.5Ω)

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≤

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 5
Eoff Eoff
Eon Eon
8 4
Etotal Etotal

Switching Energy (mJ)

SwitchIng Energy (mJ)

6 3

4 2

2 1

0 0
20 30 40 50 60 70 80 0 15 30 45 60 75
IC (A) Rg (Ω)
Figure 17: Switching Loss vs. IC Figure 18: Switching Loss vs. Rg
(Tj=150°C, VGE=15V, VCE=400V, Rg=7.5Ω) (Tj=150°C, VGE=15V, VCE=400V, IC=40A)

3 3
Eoff Eoff

2.5 Eon 2.5 Eon

Etotal Etotal
Switching Energy (mJ)

Switching Energy (mJ)

2 2

1.5 1.5

1 1

0.5 0.5

0 0
25 50 75 100 125 150 200 250 300 350 400 450 500
TJ (°C) VCE (V)
Figure 19: Switching Loss vs. Tj Figure 20: Switching Loss vs. VCE
(VGE=15V, VCE=400V, IC=40A, Rg=7.5Ω) (Tj=150°C, VGE=15V, IC=40A, Rg=7.5Ω)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

2000 30 600 30

25
1600 24 480 150°C
150°C
20
1200 18 360

Trr (ns)
Qr (nC)

Irm (A)
Trr

S
15
25°C 25°C
800 Qrr 12 240
150°C 10
150°C
400 6 120
5
Irm 25°C
25°C S
0 0 0 0
10 15 20 25 30 35 40 10 15 20 25 30 35 40
IF(A) IF (A)
Figure 21: Diode Reverse Recovery Charge and Figure 22: Diode Reverse Recovery Time and
Peak Current vs. Conduction Current Softness Factor vs. Conduction Current
(VGE=15V, VCE=400V, di/dt=200A/µs) (VGE=15V, VCE=400V, di/dt=200A/µs)

2000 40 500 40

1600 32 400 32
150°C
Trr 150°C
1200 24 300 24
Trr (nS)
Qrr (nC)

Irm (A)

S
Qrr
25°C
800 16 200 25°C 16

150°C 150°C
400 Irm 8 100 8
25°C 25°C S
0 0 0 0
200 300 400 500 600 700 800 200 300 400 500 600 700 800
di/dt (A/µs) di/dt (A/µs)
Figure 23: Diode Reverse Recovery Charge and Figure 24: Diode Reverse Recovery Time and
Peak Current vs. di/dt Softness Factor vs. di/dt
(VGE=15V, VCE=400V, IF=20A) (VGE=15V, VCE=400V, IF=20A)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

1 RθJC=0.48°C/W
Thermal Resistance

0.1

0.01 PDM

Single Pulse
0.001 Ton
T

0.0001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 25: Normalized Maximum Transient Thermal Impedance for IGBT

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

1 RθJC=1.6°C/W
Thermal Resistance

0.1

PDM
0.01
Single Pulse
0.001 Ton
T

0.0001
1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 26: Normalized Maximum Transient Thermal Impedance for Diode

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 Figure A: Gate Charge Test Circuit & Waveforms

Figure B: Inductive Switching Test Circuit & Waveforms

Figure C: Diode Recovery Test Circuit & Waveforms

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