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Ultrafast Rectifier for Electronics

Surface diodes components in schematoc arrays with description

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0% found this document useful (0 votes)
19 views5 pages

Ultrafast Rectifier for Electronics

Surface diodes components in schematoc arrays with description

Uploaded by

erikabcdh
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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ES2F, ES2G

www.vishay.com
Vishay General Semiconductor
Surface-Mount Ultrafast Plastic Rectifier
FEATURES
• Glass passivated pellet chip junction Available

• Ideal for automated placement


• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
SMB (DO-214AA) LF maximum peak of 260 °C
• AEC-Q101 qualified available
Cathode Anode - Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
LINKS TO ADDITIONAL RESOURCES
3D 3D TYPICAL APPLICATIONS
3D Models
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, and telecommunication.

PRIMARY CHARACTERISTICS
IF(AV) 2.0 A
MECHANICAL DATA
VRRM 300 V, 400 V Case: SMB (DO-214AA)
IFSM
Molding compound meets UL 94 V-0 flammability rating
50 A
Base P/N-E3 - RoHS-compliant, commercial grade
trr 35 ns
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
VF at IF 1.1 V (“_X” denotes revision code e.g. A, B,.....)
TJ max. 150 °C
Terminals: matte tin plated leads, solderable per
Package SMB (DO-214AA) J-STD-002 and JESD 22-B102
Circuit configuration Single E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: color band denotes cathode end

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL ES2F ES2G UNIT
Device marking code EF EG
Maximum repetitive peak reverse voltage VRRM 300 400 V
Working peak reverse voltage VRWM 225 300 V
Maximum RMS voltage VRMS 210 280 V
Maximum average forward rectified current at TL = 110 °C IF(AV) 2.0 A
Peak forward surge current 8.3 ms single half sine-wave
IFSM 50 A
superimposed on rated load
Operating junction and storage temperature range TJ, TSTG -55 to +150 °C

Revision: 13-May-2020 1 Document Number: 88588


For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)


PARAMETER TEST CONDITIONS SYMBOL ES2F ES2G UNIT
Maximum instantaneous forward voltage 2.0 A VF (1) 1.1 V
TA = 25 °C 10
Maximum reverse current at VRRM IR µA
TA = 100 °C 200
Maximum reverse recovery time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A trr 35 ns
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Maximum reverse recovery time trr 50 ns
Irr = 0.1 IRM
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Maximum reverse recovery current IRM 3.0 A
Irr = 0.1 IRM
IF = 1.0 A, dI/dt = 100 A/μs, VR = 30 V,
Maximum stored charge Qrr 50 nC
Irr = 0.1 IRM
Typical junction capacitance 4.0 V, 1 MHz CJ 15 pF
Note
(1) Pulse test: 300 μs pulse width, 1 % duty cycle

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)


PARAMETER SYMBOL ES2F ES2G UNIT
RJA (1) 75
Maximum thermal resistance °C/W
RJL (1) 25
Note
(1)
Units mounted on PCB 5.0 mm x 5.0 mm (0.013 mm thick) land areas

ORDERING INFORMATION (Example)


PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
ES2G-E3/52T 0.096 52T 750 7" diameter plastic tape and reel
ES2G-E3/5BT 0.096 5BT 3200 13" diameter plastic tape and reel
ES2GHE3_A/H (1) 0.096 H 750 7" diameter plastic tape and reel
ES2GHE3_A/I (1) 0.096 I 3200 13" diameter plastic tape and reel
Note
(1) AEC-Q101 qualified

Revision: 13-May-2020 2 Document Number: 88588


For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

Axis Title
3.0 1000 10000
Average Forward Rectified Current (A)

Resistive or Inductive Load

Instantaneous Reverse Current (μA)


TJ = 150 °C
100
TJ = 125 °C

TJ = 100 °C
2.0 10 1000

2nd line
1st line
2nd line
1
TJ = 25 °C

1.0 0.1 100

0.01
TJ = -40 °C

0 0.001 10
80 90 100 110 120 130 140 150 0 20 40 60 80 100
Lead Temperature (°C) Percent of Rated Peak Reverse Voltage (%)

Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics

60 200
8.3 ms Single Half Sine-Wave
Peak Forward Surge Current (A)

at TL = 110 °C
Reverse Recovery Time nC/ns

50
Recovered Stored Charge/

160 at 5 A, 50 A/µs

40
120
at 2 A, 20 A/µs
30 at 5 A, 50 A/µs
80 at 2 A, 20 A/µs
20 at 1 A, 100 A/µs

40 at 1 A, 100 A/µs
10
trr
Qrr
0 0
1 10 100 25 50 75 100 125 150 175
Number of Cycles at 60 Hz Junction Temperature (°C)

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Fig. 5 - Reverse Switching Characteristics

Axis Title
100 10000 100
Instantaneous Forward Current (A)

TJ = 25 °C
TJ = 150 °C f = 1.0 MHz
Vsig = 50 mVp-p
Junction Capacitance (pF)

10
TJ = 125 °C 1000
2nd line

TJ = 100 °C
1 10

TJ = 25 °C 100
0.1

TJ = -40 °C

0.01 10
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1
0.1 1 10 100 1000
Instantaneous Forward Voltage (V)
Reverse Voltage (V)

Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Junction Capacitance

Revision: 13-May-2020 3 Document Number: 88588


For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
ES2F, ES2G
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

SMB (DO-214AA)
Cathode Band
Mounting Pad Layout

0.085 (2.159) MAX.


0.086 (2.20) 0.155 (3.94)
0.077 (1.95) 0.130 (3.30)
0.086 (2.18) MIN.

0.180 (4.57)
0.160 (4.06) 0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152) 0.220 (5.59) REF.

0.096 (2.44)
0.084 (2.13)

0.060 (1.52) 0.008 (0.2)


0.030 (0.76) 0 (0)
0.220 (5.59)
0.205 (5.21)

Revision: 13-May-2020 4 Document Number: 88588


For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
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Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited
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© 2021 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 09-Jul-2021 1 Document Number: 91000

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