Ellipsometry Session - 4A
Ellipsometry Session - 4A
James N. Hilfiker
University of Toledo
August 20, 2009
Advanced Grading
Ψin degrees
Exp Δ -E 65° 180 Exp Δ -E 65° 180
Ψin degrees
12 12
Δin degrees
Δin degrees
90 90
10 10
0 0
(A) (B)
8 -90 8 -90
400 600 800 1000 1200
Wavelength (nm)
BK7 BK7
2.6 1.0
n top
2.4 n bottom
k top
0.8
2.2 k bottom
0.6
2.0
0.4
1.8
1.6 0.2
1.4 0.0
0 300 600 900 1200 1500 1800
Wavelength (nm)
More complex
profiles available
1. “Nodes” (next slide)
2. Parameter Grading
– Example of a
Gaussian
distribution for free
carrier density
(Sb implanted Ge)
2.4 n
0.02
1.6
1.4 0.00
-200 0 200 400 600 800
Distance from Substrate in Å
•ITO: No Grading
Generated and Experimental
40
Model Fit
Exp E 45°
Exp E 50°
30
2 srough 5.3383 nm Exp E 55°
Exp E 60°
Ψ in degrees
Exp E 65°
1 ito genosc 61.85 nm 20
Exp E 70°
0
0 300 600 900 1200 1500 1800
Exp E 60°
Exp E 65°
Δ in degrees
Exp E 70°
1.5 0.6
100
1.0 0.4
0
0.5 0.2
Grading 2-nodes
40
Model Fit
Exp E 45°
Exp E 50°
30 Exp E 55°
Exp E 60°
Ψ in degrees
Exp E 65°
Exp E 70°
3 srough 5.6959 nm 20
Δ in degrees
1.5 Exp E 70°
0.6 100
1.0
0.4
0
0.5
0.2
Ψ in degrees
Exp E 65°
3 srough 5.8724 nm Exp E 70°
20
2 graded2 (ito genosc) 62.075 nm
1 ito genosc 0 nm 10
•MSE=3.27
& improved near-IR
graded2 Optical Constants Generated and Experimental
2.5 1.2 300 Model Fit
Exp E 45°
n top Exp E 50°
1.0
Extinction Coefficient ' k'
Δ in degrees
1.5 Exp E 70°
0.6 100
1.0
0.4
0
0.5
0.2
•Node 1
•Node 2 •Node 3
“ITO-6.dat”
30
0.5 0.5
Model Fit
Exp E 45°
Exp E 50°
20 Exp E 55° 0.0 0.0
Exp E 60° 300 600 900 1200 1500 1800
Exp E 65°
10 Exp E 70° Wavelength (nm)
Exp E 75°
Exp E 80°
0 Depth Profile of Optical Constants at 1500nm
300 600 900 1200 1500 1800
1.8 1.8
Wavelength (nm)
Generated and Experimental n
1.5 k 1.5
Exp E 65°
Exp E 70°
100 Exp E 75°
Exp E 80° 0.6 0.6
0 0.3 0.3
0.0 0.0
-100 -20 0 20 40 60 80 100 120
300 600 900 1200 1500 1800
Wavelength (nm) Distance from Substrate in nm
30
Model Fit
Exp Eb 45.2° 0.0 0.0
20 Exp Eb 60.3° 300 600 900 1200 1500 1800
Exp Eb 75.5°
Wavelength (nm)
10 Depth Profile of Optical Constants at 1500nm
2.1 1.8
0
300 600 900 1200 1500 1800 1.8 1.5
0.6
100
0.3 0.3
Figure from:
Spectroscopic Ellipsometry:
Principles and Applications
by Hiroyuki Fujiwara (2003)
⎝ rss ⎠ Es Es rss
⎜ out ⎟ = J⎜ in ⎟ = ⎜ ⎟ ⎜ in ⎟ Ellipsometry
assumes
⎝ Es ⎠ ⎝ Es ⎠ ⎝ 0 rss ⎠ ⎝ Es ⎠ cross-terms = 0
iΔ r pp
AnE = tan(Ψ) ⋅ e = rss
iΔ ps r ps
Aps = tan(Ψ ps ) ⋅ e =
r pp
i Δ sp rsp
Asp = tan( Ψ sp ) ⋅ e =
rss
19 © 2009 J.A. Woollam Co., All Rights Reserved
Euler Angles
Laboratory
Laboratoryframe
frameof
ofreference
reference
isisdefined
definedby:
by:
Plane of
••sample
samplesurface
surface(x-y
(x-yplane)
plane) incidence
••plane
planeofofincidence
incidence(x-z
(x-zplane)
plane)
x
y z
Shown: sample
y ε11 direction
1) φ : rotate x,y about z
z
θ z”
sample y’ x’
surface
x ε22
y” z’
direction
y z
φ ε11 direction
3) ψ : rotate x”,y” about z”
ε33
direction
y’ x’ sample ε33
surface direction
x ε11 direction
z ε22 direction
y z
ψ x”
x’’’
y’’’ z’’’
y”
coherent
p- & s- E-field
components
26.0
24.0
22.0
20.0
400 500 600 700 800 900 1000
Wavelength (nm)
OR
Complete Characterization of substrate.
Come to our Advanced Course
24 © 2009 J.A. Woollam Co., All Rights Reserved
Data Analysis Review
Transparent: Cauchy
Absorbing: Point-by-Point Fit
GENOSC
SE + Transmission
Microstructure: EMA
Roughness
Grading
Dielectric
Semiconductor Metal
Crystalline values Opacity
Surface Oxide Direct Fit
Isotropic Anisotropic Ignore oxide/
•Cauchy/ Sellmeier Generalized SE roughness
•Backside BIAXIAL layer
•Roughness
•Transmission
n~0
n~1
n~2