CONTENTS

SL.NO. EXPERIMENT PAGE NO.

DESIGN, IMPLEMENTATION AND MEASUREMENT WITH
01 GRAPHICAL ANALYSIS OF INPUT AND OUTPUT OF CLIPPING 01
CIRCUITS WITH P-N DIODE.

DESIGN, IMPLEMENTATION AND MEASUREMENT WITH 07

02 GRAPHICAL ANALYSIS OF INPUT AND OUTPUT OF CLAMPER
CIRCUITS WITH P-N DIODE.
17
TRANSITOR COMMON -BASE CONFIGURATION
03 CHARACTERISTICS
21
TRANSITOR COMMON - EMITTER CONFIGURATION
04
CHARACTERISTICS
05
HALF -WAVE RECTIFIER WITH AND WITHOUT FILTER

06 FULL-WAVE RECTIFIER WITH AND WITHOUT FILTER 25

07 h-PARAMETERS OF CE CONFIGURATION 29

08 FREQUENCY RESPONSE OF CE AMPLIFIER

32

09 FREQUENCY RESPONSE OF CC AMPLIFIER 37

0
 EXPERIMENT NO. 1
DIODE CLIPPING CIRCUITS

Aim: DESIGN , IMPLEMENTATION AND MEASUREMENT WITH GRAPHICAL ANALYSIS OF

INPUT AND OUTPUT OF CLIPPING CIRCUITS WITH P-N DIODE.

Components required:
-Power Supply
-Diodes IN4007or BY127
-Resistors
Procedure:
Make the Connections as shown in the circuit diagram
Apply sinusoidal input Vi of 1 KHz and of amplitude 8V P-P to the circuit.
Observe the output signal in the CRO and verify it with given waveforms.
Apply Vi and Vo to the X and Y channel of CRO and observe the transfer
characteristic waveform and verify it.
(I) Positive Clipping Circuit:

Circuit Diagram:

Waveforms:

1
Transfer Characteristics:

To find the value of R:

Given: Rf =100Ω, Rr =100KΩ
Rf - Diode forward resistance
Rr - Diode reverse resistance
R= 3.16KΩ
Choose R as 10 KΩ
Let the output voltage be clipped at +3V
Vomax =3V
From the circuit diagram,
Vomax = Vr+Vref
Where Vr is the diode drop = 0.6V
Vref = Vomax -Vr
=3 - 0.7
Vref = 2.3 V

(II) Negative Clipping Circuit:

2
 Circuit Diagram:

Waveforms:

Transfer Characteristics:

3
Let the output voltage be clipped at -3V
Vomin = -3V
Vomin = -Vr+Vref
Vref = Vomin+Vr = -3 + 0.7
Vref = -2.3V

(III) Diode Series Clipping / Positive Peak Clipper:

Circuit Diagram

4
Waveforms:

Transfer Characteristics:

Let the output voltage be clipped at 2V

Vomax = Vref = 2V

5
(IV) Negative Peak Clipper:

Circuit Diagram

Waveforms:

Transfer Characteristics:

6
Let the output voltage be clipped at -2V
Vomin = Vref = -2V

(V) Clipping at two independent levels:

Circuit Diagram

7
Waveforms:

Transfer Characteristics:

Let Vomax = 6V and Vomin = 3V

Vomax = Vr1 + Vr
Vr1 = Vomax - Vr = 6 – 0.7 = 5.3V
Vomin = Vr2- Vr
Vr2 = Vomin + Vr = 3 + 0.7= 3.7V

(VI) Double ended clipper to generate a symmetric square wave:

Circuit Diagram:

8
Waveforms:

Transfer Characteristics:

Let VR1 = VR2 = VR, Vomax = 4V

Vomax = VR + Vr
VR = Vomax – Vr = 4 – 0.7
VR = 3.3V

9
(VII) To Clip a sine wave between +2V and -3V level:

Circuit Diagram:

Transfer Characteristics:

To Clip a sine wave between +2V and -3V level

Vo = V1 + Vr

10
V1 = Vo - Vr = 2-0.7
V1 = 1.4V
Vo = V2 - Vr
-3 = V2 – 0.7
V2 = -3 + 0.7
V2 = -2.3V
EXPERIMENT NO. 2

CLAMPING CIRCUITS
Aim: Design and test positive and negative clamping circuit for a given reference voltage.
Components required:
- Power Supply
- CRO
- Signal Generator
- Diode BY 127
- Resistors
- Capacitor
Design:
Rf – Diode forward resistance = 100Ω
Rr – Diode Reverse resistance = 1M Ω
R = = 10KΩ
let T = 1ms f(1KHz)
Let RC = 10T
RC = 10ms
C = 1μF
R = 10KΩ
(I) Positive Clamping Circuits:

Waveforms:

11
(II) Design a Clamping Circuit to Clamp Negative Peak at +3V:

Circuit Diagram

Waveforms:

12
Vo = + Vref
3 = -0.7 + Vref,
Vref = 3.7

(III) Negative Clamping Circuit:

Circuit Diagram:

Waveforms:

13
(IV) Design a Clamping Circuit to clamp Positive Peak at -3V:
Circuit Diagram:

Waveforms:

Vo = - Vref
Vref = - Vo +Vcutin
= +3+0.7
Vref = 3.7

(V) Design a Clamping Circuit to Clamp Negative Peak at -3V:

Circuit Diagram:

14
Waveforms:

Vo = - ( + Vref)
Vref = -Vo -Vcutin
= - 0.7 – (- 3)
Vref =+2.3V

(VI) Design a Clamping Circuit to clamp Positive Peak at +3V:

Circuit Diagram:

15
Waveforms:

Vo = + Vref
Vref = Vo -
= 3 - 0.7
Vref = 2.7V
Procedure:
1. Make connections as shown in the diagram.
2. Apply sinusoidal input signal of 8V P-P from signal generator.
3. Observe the output waveform in the CRO.
4. Note down the readings from the CRO and compare it with the expected values.

EXPERIMENT NO. 3

TRANSITOR COMMON -BASE CONFIGURATION CHARACTERISTICS

AIM: 1.To observe and draw the input and output characteristics of a transistor connected in
common base configuration.
2. To find α of the given transistor and also its input and output Resistances.
APPARATUS:
Transistor BC107: 1No.
Regulated power supply (0-30V): 1No.
Voltmeter (0-20V): 2No.
Ammeters (0-10mA): 2No.
Resistor, 1KΩ: 2No
Bread board
Connecting wires

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THEORY:
A transistor is a three terminal active device. The terminals are emitter, base, collector. In CB
configuration, the base is common to both input (emitter) and output (collector). For normal
operation, the E-B junction is forward biased and C-B junction is reverse biased. In CB
configuration, IE is +ve, IC is –ve and IB is –ve. So,
VEB = F1 (VCB, IE) and IC = F2 (VEB, IB)
With an increasing the reverse collector voltage, the space-charge width at the output junction
increases and the effective base width “W” decreases. This phenomenon is known as “Early
effect”. Then, there will be less chance for recombination within the base region. With increase
of charge gradient within the base region, the current of minority carriers injected across the
emitter junction increases. The current amplification factor of CB configuration is given by,
α = ΔIC/ ΔIE
Input Resistance, ri = ΔVBE /ΔIE at Constant VCB
Output Résistance, ro = ΔVCB /ΔIC at Constant IE

CIRCUIT DIAGRAM:

EXPECTED GRAPHS:

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 (A) INPUT CHARACTERISTICS

(B) OUTPUTCHARACTERISTICS

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OBSERVATIONS:

(a) INPUT CHARACTERISTICS:

VEE(V) VCB=1V VCB= 2V VCB= 4V

VEB(V) IE(mA) VEB(V) IE(mA) VEB(V) IE(mA)

(b) OUTPUT CHARACTERISTICS:

Vcc(V) IE= IE = IE=

VCB(V) IC(mA) VCB(V) IE(mA) VCB(V) IC(mA)

PROCEDURE:
(A) INPUT CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. For plotting the input characteristics, the output voltage VCE is kept constant at 0V and for
different values of VEE, note down the values of IE and VBE
3. Repeat the above step keeping VCB at 2V, 4V, and 6V and all the readings are tabulated.
4. A graph is drawn between VEB and IE for constant VCB.

(B) OUTPUT CHARACTERISTICS:

1. Connections are made as per the circuit diagram.
2. For plotting the output characteristics, the input IE is kept constant at 0.5mA and for different
values of VCC, note down the values of IC and VCB.
3. Repeat the above step for the values of IE at 1mA, 5mA and all the readings are tabulated.
4. A graph is drawn between VCB and Ic for constant IE
PRECAUTIONS:
1. The supply voltages should not exceed the rating of the transistor.
2. Meters should be connected properly according to their polarities.
RESULT: The Current gain of the Transistor in CB is ______ , the input Resistance is
_____ and the output Resistance is ______.

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VIVA QUESTIONS:
1. What is the range of α for the transistor?
2. Draw the input and output characteristics of the transistor in CB configuration.
3. Identify various regions in output characteristics.
4. What is the relation between α and β?
5. What are the applications of CB configuration?
6. What are the input and output impedances of CB configuration?
7. Define α (alpha).
8. What is early effect?
9. Draw Circuit diagram of CB configuration for PNP transistor.
10. What is the power gain of CB configuration?

EXPERIMENT NO. 4
TRANSITOR COMMON - EMITTER CONFIGURATION CHARACTERISTICS
AIM:
1. To design and draw the input and output characteristics of transistor connected in CE
configuration.
2. To find β of the given transistor and also its input and output Resistances
APPARATUS:
Transistor, BC107: 1No.
Regulated power supply (0-30V): 1No.
Voltmeter (0-20V): 2No.
Ammeters (0-20mA): 1No.
Ammeters (0-200μA): 1No.
Resistor, 100Ω: 1No
Resistor, 1KΩ: 1No.
Bread board
Connecting wires
THEORY:
In common emitter configuration, input voltage is applied between base and emitter terminals
and output is taken across the collector and emitter terminals. Therefore the emitter terminal is
common to both input and output. The input characteristics resemble that of a forward biased
diode curve. This is expected since the Base-Emitter junction of the transistor is forward biased.
As compared to CB arrangement IB increases less rapidly with VBE. Therefore input resistance of
CE circuit is higher than that of CB circuit. The output characteristics are drawn between I c and
VCE at constant IB. the collector current varies with VCE up to few volts only. After this the
collector current becomes almost constant, and independent of VCE. The value of VCE up to which
the collector current changes with V CE is known as Knee voltage. The transistor always operated
in the region above Knee voltage, IC is always constant and is approximately equal to IB.The
current amplification factor of CE configuration is given by
β = ΔIC/ΔIB
Input Resistance, ri = ΔVBE /ΔIB (μA) at Constant VCE
Output Résistance, ro = ΔVCE /ΔIC at Constant IB (μA)

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CIRCUIT DIAGRAM:

EXPECTED GRAPHS:

(a) INPUT CHARACTERISTICS:

21
 (b) OUTPUT CHARACTERSITICS:

OBSERVATIONS:

(a) INPUT CHARACTERISTICS:

VBB(V) VCE = 1V VCE = 2V VCE = 4V

VBE(V) IB(μA) VBE(V) IB(μA) VBE(V IE(mA)

(b) OUTPUT CHARACTERISTICS:

S.No. IB = 50 μA IB = 75 μA IB = 100 μA
VCE(V) IC(mA) VCE(V) IC(mA) VCE(V) IC(mA)

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PROCEDURE:
(A) INPUT CHARACTERISTICS
1. Connect the circuit as per the circuit diagram.
2. For plotting the input characteristics the output voltage VCE is kept constant at 1V and for
different values of VBB, note down the values of IB and VBE
3. Repeat the above step by keeping VCE at 2V and 4V and tabulate all the readings.
4. Plot the graph between VBE and IB for constant VCE
(B) OUTPUT CHARACTERISTICS:
2. Connect the circuit as per the circuit diagram
3. For plotting the output characteristics the input current IB is kept constant at 50μA and for
different values of VCC note down the values of IC and VCE
4. Repeat the above step by keeping IB at 75 μA and 100 μA and tabulate the all the readings.
5. Plot the graph between VCE and IC for constant IB
PRECAUTIONS:
1. The supply voltage should not exceed the rating of the transistor
2. Meters should be connected properly according to their polarities
RESULT: The input and output characteristics of transistor connected in CE configuration have
been observed and the β of the transistor is calculated as _____ and its input and output
Resistances are ______ and ________.
VIVA QUESTIONS:
1. What is the range of β for the transistor?
2. What are the input and output impedances of CE configuration?
3. Identify various regions in the output characteristics.
4. What is the relation between α and β?
5. Define current gain in CE configuration.
6. Why CE configuration is preferred for amplification?
7. What is the phase relation between input and output?
8. Draw diagram of CE configuration for PNP transistor.
9. What is the power gain of CE configuration?
10. What are the applications of CE configuration?

EXPERIMENT NO. 5
HALF -WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM: To design and examine the input and output waveforms of half wave Rectifier and also
calculate its load regulation and ripple factor.
1. with Filter
2. without Filter
APPARATUS:
Digital multimetersMultimeter - 1No.
Transformer (6V-0-6V) - 1No.
Diode, 1N4007 - 1No.
Capacitor 100μf/470 μf - 1No.
Decade Resistance Box - 1No.
Breadboard
CRO and CRO probes
Connecting wires

23
THEORY:
In Half Wave Rectification, When AC supply is applied at the input, only Positive Half
Cycle appears across the load whereas; the negative Half Cycle is suppressed. How this can be
explained as follows:
During positive half-cycle of the input voltage, the diode D1 is in forward bias and conducts
through the load resistor RL. Hence the current produces an output voltage across the load
resistor RL, which has the same shape as the +ve half cycle of the input voltage.
During the negative half-cycle of the input voltage, the diode is reverse biased and there is no
current through the circuit. i.e., the voltage across RL is zero. The net result is that only the +ve
half cycle of the input voltage appears across the load. The average value of the half wave
rectified o/p voltage is the value measured on dc voltmeter.
For practical circuits, transformer coupling is usually provided for two reasons.
1. The voltage can be stepped-up or stepped-down, as needed.
2. The ac source is electrically isolated from the rectifier. Thus preventing shock hazards in the
secondary circuit.
The efficiency of the Half Wave Rectifier is 40.6%
Theoretical calculations for Ripple factor:
Without Filter:
Vrms=Vm/2
Vm=2Vrms
Vdc=Vm/П
Ripple factor r = √ (Vrms/ Vdc )2 -1 =1.21
With Filter:
Ripple factor, r=1/ (2√3 f C R)

CIRCUIT DIAGRAM:

(a) Half wave Rectifier without filter:

24
(b) Half wave Rectifier with Filter

EXPECTED WAVEFORMS:
(a) INPUT WAVEFORM

(b) OUTPUT WAVFORM WITHOUT FILTER

(c) OUTPUT WAVEFORM WITH FILTER:

25
PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Connect the primary side of the transformer to ac mains and the secondary side to the rectifier
input.
3. By the multimeter, measure the ac input voltage of the rectifier and, ac and dc voltage at the
output of the rectifier.
4. Find the theoretical of dc voltage by using the formula,
Vdc=Vm/П
Where, Vm=2Vrms, (Vrms=output ac voltage.)
5. The Ripple factor is calculated by using the formula
r = ac output voltage/dc output voltage.
REGULATION CHARACTERISTICS:
1. Connections are made as per the circuit diagram.
2. By increasing the value of the rheostat, the voltage across the load and current flowing through
the load are measured.
3. The reading is tabulated.
4. From the value of no-load voltages, the %regulation is calculated using the formula:
%Regulation = [(VNL-VFL) /VFL]*100

PRECAUTIONS:
1. The primary and secondary side of the transformer should be carefully identified
2. The polarities of all the diodes should be carefully identified.
3. While determining the % regulation, first Full load should be applied and then it should be
decremented in steps.
RESULT: The ripple factors for Half wave Rectifier with and without load and the load
regulation has been calculated.

VIVA QUESTIONS:
1. What is the PIV of Half wave rectifier?
2. What is the efficiency of half wave rectifier?
3. What is the rectifier?
4. What is the difference between the half wave rectifier and full wave Rectifier?
5. What is the o/p frequency of Bridge Rectifier?
6. What are the ripples?
7. What is the function of the filters?
8. What is TUF?

26
9. What is the average value of o/p voltage for HWR?
10. What is the peak factor?

EXPERIMENT NO. 6
FULL-WAVE RECTIFIER WITH AND WITHOUT FILTER
AIM: To design and examine the input and output waveforms of Full Wave Rectifier and also
calculate its load regulation and ripple factor.
1. with Filter
2. without Filter
APPARATUS:
Digital multimetersMultimeter: 1No.
Transformer (6V-0-6V): 1No.
Diode, 1N4007: 2No.
Capacitor 100μF/470 μF: 1No.
Decade Resistance Box : 1No.
Breadboard
CRO and CRO probes
Connecting wires
THEORY:
The circuit of a center-tapped full wave rectifier uses two diodes D1&D2.
During positive half cycle of secondary voltage (input voltage), the diode D1 is forward biased
and D2is reverse biased. So the diode D1 conducts and current flows through load resistor RL.
During negative half cycle, diode D2 becomes forward biased and D1 reverse biased. Now, D2
conducts and current flows through the load resistor RL in the same direction. There is a
continuous current flow through the load resistor RL, during both the half cycles and will get
unidirectional current as show in the model graph. The difference between full wave and half
wave rectification is that a full wave rectifier allows unidirectional (one way) current to the load
during the entire 360 degrees of the input signal and half-wave rectifier allows this only during
one half cycle (180 degree).
THEORITICAL CALCULATIONS:
Vrms = Vm/ √2
Vm =Vrms√2
Vdc=2Vm/П
(i)Without filter:
Ripple factor, r = √ (Vrms/ Vdc) 2 -1 = 0.812
(ii)With filter:
Ripple factor, r = 1/ (4√3 f C RL)

27
CIRCUIT DIAGRAM:

(a) FULL WAVE RECTIFIER WITHOUT FILTER:

(b) FULL WAVE RECTIFIER WITH FILTER:

28
EXPECTED WAVEFORMS:

(a) INPUT WAVEFORM

(b) OUTPUT WAVEFORM WITHOUT FILTER:

(a) OUTPUT WAVEFORM WITHOUT FILTER:

PROCEDURE:
1. Connections are made as per the circuit diagram.
2. Connect the ac mains to the primary side of the transformer and the secondary side to the
rectifier.

29
3. Measure the ac voltage at the input side of the rectifier.
4. Measure both ac and dc voltages at the output side the rectifier.
5. Find the theoretical value of the dc voltage by using the formula Vdc=2Vm/П
6. Connect the filter capacitor across the load resistor and measure the values of V ac and Vdc at
the output.
7. The theoretical values of Ripple factors with and without capacitor are calculated.
8. From the values of Vac and Vdc practical values of Ripple factors are calculated. The
practical values are compared with theoretical values.

PRECAUTIONS:
1. The primary and secondary side of the transformer should be carefully identified.
2. The polarities of all the diodes should be carefully identified.
RESULT: The ripple factors for Full wave Rectifier with and without load and the load
regulation has been calculated.
VIVA QUESTIONS:
1. Define regulation of the full wave rectifier?
2. Define peak inverse voltage (PIV)? And write its value for Full-wave rectifier?
3. If one of the diode is changed in its polarities what wave form would you get?
4. Does the process of rectification alter the frequency of the waveform?
5. What is ripple factor of the Full-wave rectifier?
6. What is the necessity of the transformer in the rectifier circuit?
7. What are the applications of a rectifier?
8. What is meant by ripple and define Ripple factor?
9. Explain how capacitor helps to improve the ripple factor?
10. Can a rectifier made in INDIA (V=230v, f=50Hz) be used in USA (V=110v,
f=60Hz)?

EXPERIMENT NO. 8
h- PARAMETERS OF CE CONFIGURATION
AIM: To calculate the h-parameters of the transistor in CE configuration.
APPRATUS:
Transistor BC107: 1No.
Resistors 100 K Ώ 100 Ώ: 1No.Each
Ammeter (0-200μA): 1No.
Ammeter (0-200mA: 1No.
Voltmeter (0-20V): 2Nos
Regulated Power Supply (0-30V): 2Nos
Breadboard
THEORY:
(A) INPUT CHARACTERISTICS:
The two sets of characteristics are necessary to describe the behavior of the CE configuration, in
which one for input or base emitter circuit and other for the output or collector emitter circuit. In
input characteristics the emitter base junction forward biased by a very small voltage V BB where
as collector base junction reverse biased by a very large voltage VCC. The input characteristics
are the plot of input current IB Versus the input voltage VBE for a range of values of output
voltage V . The following important points can be observed from these characteristics curves.
CE

30
1. Input resistance is high as IB increases less rapidly with VBE
2. The input resistance of the transistor is the ratio of change in base emitter voltage ΔV BE to
change in base current ΔIB at constant collector emitter voltage (VCE) i.e. Input resistance or
input impedance hie = ΔVBE / ΔIB at VCE constant.

(B) OUTPUT CHARACTERISTICS:

A set of output characteristics or collector characteristics are a plot of output current I C
Versus output voltage VCE for a range of values of input current IB .The following important
points can be observed from these characteristics curves.
1. The transistor always operates in the active region. i.e. the collector current
IC increases with VCE very slowly. For low values of the VCE the IC increases rapidly with a small
increase in VCE .The transistor is said to be working in saturation region.
2. Output resistance is the ratio of change of collector emitter voltage ΔVCE, to change in
collector current ΔIC with constant IB. Output resistance or Output impedance hoe = ΔVCE / ΔIC at
IB constant.
Input Impedance hie = ΔVBE / ΔIB at VCE constant
Output impedance hoe = ΔVCE / ΔIC at IB constant
Reverse Transfer Voltage Gain hre = ΔVBE / ΔVCE at IB constant
Forward Transfer Current Gain hfe = ΔIC / ΔIB at constant VCE

CIRCUIT DIAGRAM:

EXPECTED GRAPH:
A) INPUT CHARACTERSITICS:
(i) Calculation of hie
(ii) Calculation of hre

31
32
OUPUT CHARACTERISITCS:
(i) Calculation of hfe

(ii) Calculation of hoe

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OBSERVATIONS:

(A) Input Characteristics

S.NO VCE=0V VCE=6V

VBE(V) IB(μA) VBE(V) IB(μA)

(B) Output Characteristics:

S.NO IB = 20 μA IB = 40 μA IB = 60 μA
VCE IC(mA) VCE IC(mA) VCE IC(mA
(V) (V) (V) )

PROCEDURE:
1. Connect a transistor in CE configuration circuit for plotting its input and output
characteristics.
2. Take a set of readings for the variations in IB with VBE at different fixed values of output
voltage VCE.
3. Plot the input characteristics of CE configuration from the above readings.
4. From the graph calculate the input resistance hie and reverse transfer ratio hre by taking the
slopes of the curves.
5. Take the family of readings for the variations of IC with VCE at different values of fixed IB.
6. Plot the output Characteristics from the above readings.
7. From the graphs calculate hfe and hoe by taking the slope of the curves.
RESULT: The CE h-parameters calculated are:
hie =___ hre=____ hfe=______ hoe=______

VIVA QUESTIONS:
1. What are the h-parameters?
2. What are the limitations of h-parameters?
3. What are its applications?
4. Draw the equivalent circuit diagram of h- parameters?
5. Define h- parameter?
6. What is the general formula for input impedance?
7. What is the general formula for Current Gain?
8. What is the general formula for Voltage gain?

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 EXPERIMENT No. 9
FREQUENCY RESPONSE OF CE AMPLIFIER
AIM: 1.To measure the voltage gain of a CE amplifier
2. To draw the frequency response curve of the CE amplifier
APPARATUS:
Transistor BC107: 1No.
Regulated power Supply (0-30V) -1No.
Function Generator -1No.
CRO: 1No.
Resistors [33KΩ, 3.3KΩ, 330Ω, -1No.Each
1.5KΩ, 1KΩ, 2.2KΩ, 4.7KΩ]
Capacitors, 10μF: 2No
100μF: S1No.
Bread Board
Connecting Wires
THEORY:
The CE amplifier provides high gain &wide frequency response. The emitter lead is common to
both input & output circuits and is grounded. The emitter-base circuit is forward biased. The
collector current is controlled by the base current rather than emitter current. When a transistor is
biased in active region it acts like an amplifier.
The input signal is applied to base terminal of the transistor and amplifier output is taken across
collector terminal. A very small change in base current produces a much larger change in
collector current. When positive half-cycle is fed to the input circuit, it opposes the forward bias
of the circuit which causes the collector current to decrease; it decreases the voltage more
negative. Thus when input cycle varies through a negative half-cycle, increases the forward bias
of the circuit, which causes the collector current to increases thus the output signal is common
emitter amplifier is in out of phase with the input signal. An amplified output signal is obtained
when this fluctuating collector current flows through a collector resistor, Rc.
The capacitor across the collector resistor Rc will act as a bypass capacitor. This will improve
high frequency response of amplifier.

35
CIRCUIT DIAGRAM:

EXPECTED WAVE FORMS:

(a) INPUT WAVE FORM:

(b) OUTPUT WAVE FORM

36
Input-vs Output Waveform:

x-axis: frequency blue color: input waveform

y-axis: voltage pink color: output waveform

FREQUENCY RESPONSE

Calculation of Bandwidth from Frequency Response:

Bandwidth=f2-f1 Hz

37
OBSERVATIONS:

FREQUENCY RESPONSE:

Vi =40mv

Frequency in OUTPUT GAIN IN

HZ VOLTAGE(Vo) dB=20log10(Vo/Vi)

PROCEDURE:
1. Connect the circuit as shown in circuit diagram
2. Apply the input of 20mV peak-to-peak and 1 KHz frequency using Function
Generator
3. Measure the Output Voltage Vo (p-p) for various load resistors.
4. Tabulate the readings in the tabular form.
5. The voltage gain can be calculated by using the expression, Av= (V0/Vi)
6. For plotting the frequency response the input voltage is kept Constant at 20mV peak-to-peak
and the frequency is varied from 100Hz to 1MHz Using function generator
7. Note down the value of output voltage for each frequency.
8. All the readings are tabulated and voltage gain in dB is calculated by using the expression
Av=20 log10 (V0/Vi)
9. A graph is drawn by taking frequency on x-axis and gain in dB on y-axis on Semi-log graph.
10. The band width of the amplifier is calculated from the graph using the expression,
Bandwidth, BW=f2-f1
Where f1 lower cut-off frequency of CE amplifier, and
Where f2 upper cut-off frequency of CE amplifier
11. The bandwidth product of the amplifier is calculated using the Expression
Gain Bandwidth product=3-dBmidband gain X Bandwidth
RESULT: The 3-dB Bandwidth of the CE Amplifier is _____.

VIVA QUESTIONS:
1. What is phase difference between input and output waveforms of CE amplifier?
2. What type of biasing is used in the given circuit?
3. If the given transistor is replaced by a p-n-p, can we get output or not?
4. What is effect of emitter-bypass capacitor on frequency response?
5. What is the effect of coupling capacitor?
6. What is region of the transistor so that it is operated as an amplifier?
7. How does transistor act as an amplifier?
8. Draw the h-parameter model of CE amplifier.
9. What type of transistor configuration is used in intermediate stages of a multistage amplifier?
10. What is early effect?

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