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 FDD4243 40V P-Channel PowerTrench® MOSFET
March 2015

FDD4243
40V P-Channel PowerTrench® MOSFET
-40V, -14A, 44mΩ
Features General Description
„ Max rDS(on) = 44mΩ at VGS = -10V, ID = -6.7A This P-Channel MOSFET has been produced using Fairchild
„ Max rDS(on) = 64mΩ at VGS = -4.5V, ID = -5.5A Semiconductor’s proprietary PowerTrench® technology to
deliver low rDS(on) and optimized Bvdss capability to offer
„ High performance trench technology for extremely low rDS(on) superior performance benefit in the applications.
„ RoHS Compliant

Application
„ Inverter
„ Power Supplies

D G
G

S
D
TO-PA K
-2 52
(TO -252) D

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDS Drain to Source Voltage -40 V
VGS Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC= 25°C -14
-Continuous (Silicon limited) TC= 25°C (Note 1) -24
ID A
-Continuous TA= 25°C (Note 1a) -6.7
-Pulsed -60
EAS Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC= 25°C 42
PD W
Power Dissipation (Note 1a) 3
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Characteristics
RθJC Thermal Resistance, Junction to Case 3.0
°C/W
RθJA Thermal Resistance, Junction to Ambient (Note 1a) 40

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity
FDD4243 FDD4243 D-PAK(TO-252) 13’’ 16mm 2500 units

©2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDD4243 Rev. 1.3
 FDD4243 40V P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = -250µA, VGS = 0V -40 V
∆BVDSS Breakdown Voltage Temperature
ID = -250µA, referenced to 25°C -32 mV/°C
∆TJ Coefficient
VDS = -32V, -1
IDSS Zero Gate Voltage Drain Current µA
VGS = 0V TJ = 125°C -100
IGSS Gate to Source Leakage Current VGS = ±20V, VDS = 0V ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA -1.4 -1.6 -3.0 V
∆VGS(th) Gate to Source Threshold Voltage
ID = -250µA, referenced to 25°C 4.7 mV/°C
∆TJ Temperature Coefficient
VGS = -10V, ID = -6.7A 36 44
rDS(on) Drain to Source On Resistance VGS = -4.5V, ID = -5.5A 48 64 mΩ
VGS = -10V, ID = -6.7A, TJ = 125°C 53 69
gFS Forward Transconductance VDS = -5V, ID = -6.7A 16 S

Dynamic Characteristics
Ciss Input Capacitance 1165 1550 pF
VDS = -20V, VGS = 0V,
Coss Output Capacitance 165 220 pF
f = 1MHz
Crss Reverse Transfer Capacitance 90 135 pF
Rg Gate Resistance f = 1MHz 4 Ω

Switching Characteristics
td(on) Turn-On Delay Time 6 12 ns
VDD = -20V, ID = -6.7A
tr Rise Time 15 26 ns
VGS = -10V, RGEN = 6Ω
td(off) Turn-Off Delay Time 22 35 ns
tf Fall Time 7 14 ns
Qg(TOT) Total Gate Charge at 10V VDD = -20V, ID = -6.7A 21 29 nC
Qgs Gate to Source Gate Charge VGS = -10V 3.4 nC
Qgd Gate to Drain “Miller” Charge 4 nC

Drain-Source Diode Characteristics

VSD Source to Drain Diode Forward Voltage VGS = 0V, IS = -6.7A (Note 2) 0.86 1.2 V
trr Reverse Recovery Time 29 43 ns
IF = -6.7A, di/dt = 100A/µs
Qrr Reverse Recovery Charge 30 44 nC

Notes:
1: RθJA is sum of junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is
guaranteed by design while RθJC is determined by the user’s board design.

a. 40°C/W when mounted on a 1 in2 pad of 2 oz copper

b. 96°C/W when mounted on a minimum pad.

2: Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 7.5A, VDD = 40V, VGS = 10V.

FDD4243 Rev. 1.3 2 www.fairchildsemi.com

 FDD4243 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
60 3.5
VGS = -3.0V

DRAIN TO SOURCE ON-RESISTANCE

50 3.0
-ID, DRAIN CURRENT (A)

VGS = -10V VGS = -4V

VGS = -4.5V
VGS = - 6V VGS = -4.5V
40 2.5

NORMALIZED
VGS = -5V VGS = -5V
VGS = -4V
30 2.0 VGS = -6V
PULSE DURATION = 80µs
20 DUTY CYCLE = 0.5%MAX 1.5
VGS = - 3.0V
VGS = -10V
10 1.0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0 0.5
0 1 2 3 4 5 0 10 20 30 40 50 60
-VDS, DRAIN TO SOURCE VOLTAGE (V) -ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance

vs Drain Current and Gate Voltage

1.8 120
DRAIN TO SOURCE ON-RESISTANCE

ID = -6.7A ID = -6.7A PULSE DURATION = 80µs

SOURCE ON-RESISTANCE (mΩ)

VGS = -10V DUTY CYCLE = 0.5%MAX
1.6 100

1.4
rDS(on), DRAIN TO
NORMALIZED

80
TJ = 125oC
1.2
60
1.0 TJ = 25oC

40
0.8

0.6 20
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10
TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance Figure 4. On-Resistance vs Gate to

vs Junction Temperature Source Voltage

60 30
VGS = 0V
-IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs

DUTY CYCLE = 0.5%MAX
50 10
-ID, DRAIN CURRENT (A)

TJ = 150oC
40 TJ = 150oC
TJ = 25oC
30 TJ = 25oC
1
20 TJ = -55oC

TJ = -55oC
10

0 0.1
1 2 3 4 5 6 0.4 0.6 0.8 1.0 1.2
-VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode

Forward Voltage vs Source Current

FDD4243 Rev. 1.3 3 www.fairchildsemi.com

 FDD4243 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10 3000
-VGS, GATE TO SOURCE VOLTAGE(V)

ID = -6.7A
VDD = -10V
8
1000

CAPACITANCE (pF)
Ciss

6
VDD = -20V

4 VDD = -30V

Coss

2 100 f = 1MHz
VGS = 0V Crss

0 50
0 4 8 12 16 20 24 0.1 1 10 30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain

to Source Voltage

10 25
8
-IAS, AVALANCHE CURRENT(A)

-ID, DRAIN CURRENT (A)

20 VGS = -10V
6
TJ = 25oC
4 15

10 Limited by Package
2 TJ = 125oC VGS = -4.5V
5
o
RθJC = 3.0 C/W

1 0
0.01 0.1 1 10 30 25 50 75 100 125 150
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE ( C)
o

Figure 9. Unclamped Inductive Figure 10. Maximum Continuous Drain

Switching Capability Current vs Case Temperature

100 10000
P(PK), PEAK TRANSIENT POWER (W)

FOR TEMPERATURES
VGS = -10V ABOVE 25oC DERATE PEAK
-ID, DRAIN CURRENT (A)

100us CURRENT AS FOLLOWS:

10 150 – TC
1000 I = I25 ----------------------
125

TC = 25oC
1ms
1
10ms
OPERATION IN THIS SINGLE PULSE
100
100ms
AREA MAY BE TJ = MAX RATED SINGLE PULSE
LIMITED BY rDS(on) TC = 25OC
0.1 30
-5 -4 -3 -2 -1 0 1
0.5 1 10 100 10 10 10 10 10 10 10
t, PULSE WIDTH (s)
-VDS, DRAIN to SOURCE VOLTAGE (V)

Figure 11. Forward Bias Safe Figure 12. Single Pulse Maximum
Operating Area Power Dissipation

FDD4243 Rev. 1.3 4 www.fairchildsemi.com

 FDD4243 40V P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJC

0.1
0.05
0.1 0.02 PDM
0.01

t1
t2
NOTES:
0.01 DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
0.003
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION (s)

Figure 13. Transient Thermal Response Curve

FDD4243 Rev. 1.3 5 www.fairchildsemi.com

 TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower F-PFS OPTOPLANAR®
®*
AttitudeEngine™ FRFET®
SM
Awinda® Global Power Resource ®
TinyBoost®
AX-CAP®* GreenBridge Power Supply WebDesigner TinyBuck®
BitSiC Green FPS PowerTrench® TinyCalc
Build it Now Green FPS e-Series PowerXS™ TinyLogic®
CorePLUS Gmax Programmable Active Droop TINYOPTO
CorePOWER GTO QFET® TinyPower
CROSSVOLT IntelliMAX QS TinyPWM
CTL ISOPLANAR Quiet Series TinyWire
Current Transfer Logic Making Small Speakers Sound Louder RapidConfigure TranSiC
DEUXPEED® and Better™  TriFault Detect
Dual Cool™ MegaBuck TRUECURRENT®*
EcoSPARK® Saving our world, 1mW/W/kW at a time™ SerDes
MICROCOUPLER
EfficientMax SignalWise
MicroFET
ESBC SmartMax
MicroPak
® SMART START
MicroPak2 UHC®
Solutions for Your Success
® MillerDrive Ultra FRFET
Fairchild SPM®
Fairchild Semiconductor® MotionMax UniFET
STEALTH
MotionGrid® VCX
FACT Quiet Series SuperFET®
FACT® MTi® VisualMax
SuperSOT-3
FastvCore MTx® VoltagePlus
SuperSOT-6
FETBench MVN® XS™
SuperSOT-8
mWSaver® Xsens™
FPS SupreMOS®
OptoHiT
SyncFET 仙童®
OPTOLOGIC®
Sync-Lock™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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