TRANSISTOR

SUPE HET
RECEIVERS

D
A

'rfo

SINCLAIR

COVERING ALL ASPECTS OF

DESIGN, SERVICING AND
CONSTRUCTION

INCLUDES CIRCUIT DIAGRAMS

OF 50 DIFFERENT RECEIVERS
TRANSISTOR SUPERHET
RECEIVERS
(Transistor Receivers Book 2)

By Clive Sinclair

No. 4 in the Transistor Series

Bernards (Publishers) Ltd.

The Grampians,
Western Gate,
London W.6
 FIRST PUBLISHED JANUARY, 1960
REPRINTED AUGUST, 1960
REPRINTED JANUARY, 1961
REPRINTED MAY, 1961

We invite all authors, whether new or well established, to submit manuscripts

for publication. The manuscripts may deal with any facet of electronics but should
always be practical. Any circuit diagrams that may be included should have been
thoroughly checked by the author. If you are considering trying your hand at
writing this type of book we suggest that you let us have a short summary of the
subject you intend to cover. We will then be able to let you know the size of book
required and perhaps give you some advice on presentation.

Printed by V. Cooper & Partners, Ltd., Flitcroft Street, London, W.C.2,

for Bernards (Publishers) Ltd., The Grampians, Western Gate, London, W.6
 111

CONTENTS
CHAPTER ONE - The Transistor Superhet
Page Page
How the superhet works 1 The transistor detector ... 10
The R.F. amplifier 1 The A.F. amplifier 11
The frequency changer ... 3 Audio amplifiers with Class A output stages 14
The I.F. amplifier 6 The comnonents . 18
The reflex I.F./A.F. amplifier ... 9 The servicing of printed circuits .. 19

CHAPTER TWO - Transistor Superhet Kits

Henry's radio "Transistor 8" ... 21 Siemens-Ediswan SR2,'2 27
The Repanco "Mini -7" ... 21 Mullard portable superhet 27
The Repanco "Major -7" 27 Weymouth 6 -transistor receiver 31
The Repanco transistor car radio 27 The Teletron Transidyne 31

CHAPTER THREE - British Receivers

The Ace Courier .. 38 Pam receivers 46
Ihe Webster "Pocket Princess" .. 3R Pye receivers 46
The Perdio receix ers 38 The Ever Ready Skyleader 50
Cossor receivers ... 41 The R.G.D. B56 ... 50

CHAPTER FOUR - American Receivers

Circuits designed by transistor manufacturers 55 Motorola 56T1 ... 57
Regency model TR-1 ... 56 Bulova model 270 ... .. 59
Raytheon FM -101A ... 57 Magnavox Companion AM2 .. 64

CHAPTER FIVE - Japanese Receivers

National Radio AB -100 64 Standard SR -F211 66
National Radio AB -321 H or J 66 Standard SR -q204 66
Sanyo SC -14 ... 66 Earpiece only superhet 68
Standard SR -D210 66

CHAPTER SIX - French and German Receivers

Five transistor Grundig receiver 73 Ecotron seven transistor receiver 77
Six transistor Grundig receiver ... 7J

CHAYIER SEVEN - Transistors used in Superhets

Terms used in transistor literature 77 Specifications of British transistors ... 84
Transistor specifications ... 80 Specifications of American transistors 86
Equivalents list of British, European, and
American semiconductors ... 81
iv

LIST OF ILLUSTRATIONS
Figure No. Page
1. Block diagram of transistor superhet 2
2. Tuned R.F. or preselector stage ... 3
3. Basic circuit for an untuned R.F. stage ... 4
4. Typical frequency changers using separate oscillator and mixer 4
5. Commonly used autodyne converter with emitter injection 5
6. Alternative emitter injected autodyne converter ... 6
7. Two forms of base injected autodyne converter 7
8. Reflex (A.F.) base injected autodyne converter ... 7
9. Single stage neutralised I.F. amplifier ... 8
10. Two stage I.F. amplifier ... 8
11. Typical common base I.F. amplifier ... 9
12. Common Emitter reflex I.F./A.F. amplifier 10
13. Typical Class B power detector ... 11
14. Audio section with Class B push-pull output 12
15. Single ended output stage ... 13
16. Transformerless push-pull output stage ... 14
17. Two single ended, Class A, output stages 15
18. Direct coupled, three stage amplifier 16
19. Two stage direct coupled amplifier 17
20. Two stage direct coupled amplifier 18
21. Henry's Radio "Transistor 8" ... 22
22. Mini -7 Mark II ... 23
23. Circuit diagram of the Repanco Major -7 28
24. Repanco transistor car radio 29
25. Weyrad transistor receiver 30
26. The Teltron "Transidyne" 32
27. Ediswan SR2/2 33
28. Gain and loss diagram for SR2/2 34
29. Mullard's 6 -transistor receiver ... 36
30. The Ace Courier type TR 257/A ... 39
31.The Perdio PR5 (two versions) 40
32. Perdio PR.4 43
33.Cossor "Traveller's Friend" 44
34.Pam model 710 ... 48
35.Pye model 150 BQ 51
36. Ever Ready Skyleader 52
37. R.G.D. B56 receiver 53
38. Industro 4 -transistor receiver 54
39. Industro 5 -transistor receiver 56
40. Industro 7 -transistor receiver 57
41. General transistor corporation receiver ... 58
42. Regency model TR-1 ... 59
43. Raytheon FM -101A 60
44. Motorola 56T1 61
45. Circuit diagram of the nulova model 270 62
46. Magnavox companion model AM2 ... 63
47. National Radio Model AB -100 ... 65
48. National Radio Model AB -321 .. 67
49. Sanyo model 5C-14 68
50. Standard SR -D210 69
51. Standard SR -F211 70
52. Standard SR -G204 71
53. Earpiece only pocket superhet 72
54. Five transistor Grundig receiver ... 74
55. Grundig six transistor receiver ... 75
56. Ecotron 3 -waveband receiver ... 76
 TRANSISTOR SUPERHET RECEIVERS 1

CHAPTER ONE

THE TRANSISTOR SUPERHET

Of all the many types of receivers that have the valve superhet. The differences that do exist
been designed the superhet, invented by Arm- are entirely from the design point of view, the
strong in 1918, is almost the only type in mode of operation of each circuit section re-
common commercial use today. This applies as maining the same.
much to transistors as it does to valves. There Before the complete circuit diagrams shown
are several excellent reasons for this unique later in the book can be understood, the advan-
state of affairs. First of all, the well designed tages and disadvantages of all the different types
superhet 'has better sensitivity and selectivity of circuits must be fully appreciated. This
than any other type, furthermore the quality chapter, tnerefore, splits up the superhet into
is also first class. Secondly, however many stages
of pre -demodulation amplification may be used, its various units and discusses each one as a
only two variably tuned stages are necessary. separate circuit. At the end of the book there
The disadvantages are mainly difficulty of align- is a section describing the transistor itself and
ment and fairly high cost. those who have had no previous experience
might like to read this first.
One of the disadvantages of the T.R.F. type
of receiver is the dependance of its gain upon R.F. AMPLIFIER
frequency. The superhet attempts to overcome An R.F. amplifier is sometimes used before
this by changing the frequency of the incoming the frequency cnanger to increase the sensitivity
signal to a certain fixed value and then amplify- of the receiver and to reduce the effective back-
ing this intermediate frequency with fixed tuned ground noise. Either the common emitter or
circuits. common base configuration may be used though
HOW THE SUPERHET WORKS the latter is very uncommon as it gives less gain.
Sometimes the R.F. amplifier is used to improve
The incoming modulated R.F. signal is the selectivity and thus reduce the image fre-
selected by means of a normal parallel tuned quency response, but this may also be achieved
circuit. It is then combined with another, usually by use of another I.F. stage.
higher, frequency generated inside the receiver. To prevent the transistor from being over-
The combination of these two radio frequencies loaded by too strong a signal, A.G.C. is usually
contains one frequency modulated with a fre- applied to the base. The A.G.C., which is taken
quency equal to the sum of the original frequen- from the detector, varies the base bias in accor-
cies and another equal to the difference between dance with the signal strength thus controlling
them. These are demodulated giving the sum the gain of the amplifier.
and the difference of the original signals. A typical example of the r.f. amplifier is
The I.F. amplifier is tuned to the difference shown in fig. 1. The output is fed to the con-
frequency and consists of one or more fixed verter stage and the tuning condensers must be
tuned stages of R.F. amplification. As the input coupled to the oscillator making a three gang
to the I.F. amplifier must always be of the same condenser necessary.
frequency (usually between 450 and 470 kc/s) The signal is picked up by a ferrite rod or
the oscillator has to be varied in step with the aerial. As the transistor has a low input impe-
first tuned circuit. If the receiver is designed dance this must be tapped down or a secondary
to tune from 800 kc/s to 1.5 mc/s then the used to couple the signal to the base. The turns
oscillator frequency must range from 800 + ratio of this R.F. transformer should be about
450 kc/s to 1.5 me/s + 450 kc/s that is from five to one.
1.25 mc/s to 1.95 me/s and, if the required The base bias is supplied by the potentiometer
signal has a frequency of x mc/s the oscillator R1, R2 which is designed so that the emitter
frequency must always be x + 0.45 mc/s. current is about 500 microamps. Cl bypasses
The block diagram of a transistor superhet the R.F. and has a value of about 0.1 mfd. R3
is shown in fig. 1. Basically it is the same as is inserted in the emitter lead to feed back out
2 TRANSISTOR SUPERHET RECEIVERS

A.G.C.

SECOND
R. F. AMPLIFIER I.F. A.F.
(OPTIONAL) -4-
R.F.
MIXER I.F. AMPLIFIER
OR 2 TRANSISTORS
DETECTOR
DIODE OR
A.F. AMPLIFIER
1,2 OR 3 STAGES
I TRANSISTOR
I

TRANSISTOR

A.F. V

R.F.A
LOCAL
OSCILLATOR
SPEAKER

Fig. I Block Diagram of the Transistor Superhet

of phase d.c. to the input so as to d.c. statase combine a very high beta with a cut-off fre-
the transistor. It is bypassed by C2, about 0.1 quency of 15 mc/s or more such as the 0C44.
mfd. again, to prevent negative feedback at With the Mullard 0C44 gains of up to 25 db
signal frequencies. are possible in the R.F. stage.
To prevent oscillation due to the internal The use or a normal R.F. amplifier has one
resistive and capacitative feed back inside the or two disadvantages. It adds to the cost of a
transistor, neutralisation is often used. This is receiver both from the point of view of extra
achieved by feeding back a portion of the out- component cost and increased alignment diffi-
put signal comparable but of opposite phase culty. The main disadvantage however, as far
to that of the transistor via C3 and R4. The as the small receiver is concerned, is that a three
value of the components varies from transistor gang tuning condenser must be used Which is
to transistor and frequently C3 is in the form rather a bulky component. For these reasons the
of a trimmer so that adjustment may be made R.F. amplifier is mainly confined to car radios
when a transistor is replaced where extra sensitivity is essential.
The output is coupled to the next stage via Fig. 2 shows another type of R.F. amplifier
an R.F. transrormer with a turns ratio of about which does not need a three gang condenser.
5 to 1. This is necessary if the maximum gain the output from the amplifier is not tuned but
is to be obtained as the output impedance of a is resistance -capacity coupled to the converter.
transistor is about 20 times the input impe- This type of circuit is fairly economical as no
dance. Furthermore, taking the output from the R.F. transformer is required. It does not, how-
collector directly into a low impedance source ever, improve the selectivity and its gain is only
would load down the tuned circuit and reduce about 15 db at the most. This is sufficient gain
the selectivity. to noticeably improve the sensitivity. The gain
of the amplifier varies fairly considerably with
A well designed R.F. stage of this type should frequency but this may be compensated for by
give a powor gain of about 20 db. Higher gains inserting a series peaking coil between the
than this may be obtained with transistors which collector and the converter.
 TRANSISTOR SUPERHET RECEIVERS 3

C3 R4
r - - - --111- - - - - - - -
-ve

RI
FERRITE ROD
ERIAL

III
To Converter Stage

!!;T

L__ Screening Can

R2 CI R3

T
I

Fig. 2 Tuned R.F. or Preselector Stage

Receivers for certain applications do not re- order to decrease the effect of collector capaci-
quire the sensitivity and selectivity provided by tances and to improve the impedance matching,
two stages of I.F. amplification and the untuned stability and tracking properties. Almost any
R.F. stage combined with a single stage of I.F. form of sinuosoidal oscillator may be used so
amplification may find a use here. This would long as it is capable of producing sufficient
save the expense of one I.F. transformer and, power to overcome the losses due to damping
also, a small amount of space. If the R.F. by the mixer.
amplifier is reflexed to provide A.F. gain, the
saving is even greater. This question of reflexing The output from the oscillator is coupled to
will be discussed more fully in the I.F. amplifier the mixer via Cl and the secondary of the
section where it finds its most important oscillator coil. The signal frequency is simultan-
application. eously applied to the base from the secondary
of the ferrite rod aerial. The oscillator may also
THE FREQUENCY CHANGER be fed to the emitter but this incurs a heavier
loss of power. The two signals are mixed in the
There are two main types of frequency base -emitter diode and the sum and difference
changer or converter. There is the type that uses frequencies appear, amplified, at the collector.
two transistors, one as a mixer and the other The difference frequency is selected by the tuned
as a local oscillator, and there is the type that circuit and coupled to the I.F. amplifier by
combines these two functions and uses only a means of the secondary winding which may also
single transistor in an autodyne circuit. be tuned.
Fig. 4 shows a typical converter using a The injection voltage to the base of the mixer
separate oscillator and mixer. The oscillator is depends upon the setting of the tuning control
of the Hartley type using a tapped coil and and varies between 0.01 and 0,03 volts. The
separate secondary. The collector is tapped collector current varies between 250 mu.a. and
about one third of the way down the coil in 1 ma.
4 TRANSISTOR SUPERHET RECEIVERS

-ve

FERRITE ROD
AERIAL

To Converter Stage

Fig. 3 Basic Circuit for an untuned R. F. Stage

-VC

r 1

OSCILLATOR c)t
.)I( 1

To I. F. Amplifier

c.11
c.)1 C

E),)11 MIXER

JIU

T
FERRITE
ROD
AERIAL

Fig. 4 Typical Frequency Changer using separate Oscillator and Mixer

 TRANSISTOR SUPERHET RECEIVERS 5

The conversion gain achieved with this circuit achieved by means of a third winding on the
should be between 15 and 20 db with high gain same former. Thus the required local oscillation
-high frequency transistors. is generated by the transistor operating in the
The type of circuit just described is unecono- common base mode. As the signals are fed from
mical in that it uses two transistors. Further- the tuned circuit to the emitter this type of
more the frequency stability is inferior to that converter is known as the emitter injected auto-
of the autodyne and the gain is no better. The dyne.
various types of autodyne converter are shown The required signal frequency is selected by
in figs. 5, 6, 7 and 8. Disregarding fig. 8 which the tuned circuit formed by the ferrite rod
will be dealt with later, they perform three aerial and C2. The winding of the aerial is
separate functions. They generate the local tapped to match the low impedance input of
oscillation, mix the two frequencies and act as the transistor. Alternatively a secondary with
I.F. amplifiers. a small number of turns may be wound onto
Consider fig. 5. The oscillator operates as the aerial as in fig. 6.
follows : There is always a movement of elec- At low current levels the amplification of the
trons in the base. When the receiver is turned transistor is not linear so that detection or
on, this movement, known as noise, is amplified mixer action takes place in the base -emitter
and appears in the collector winding of the junction. The frequencies that result from this
oscillator coil, L2. A similar signal is induced mixer action are amplified and appear at the
in L3 and sets up oscillations at the resonant collector. These frequencies will be :
frequency of the tuned circuit. This signal is (1) The local oscillator frequency.
fed to the emitter via Cl. If L2 and L3 are (2) The signal frequency.
wound so that there is no overall phase change (3) The sum of these two.
the signals will again appear at the collector (4) The difference between them.
and the oscillation will be maintained. L3 is, The primary of the I.F. transformer L4 is
in effect, an auto transformer which ensures a tuned by C3 to the difference between the two
proper match between the high impedance tuned frequencies. As C4 is mechanically coupled to
circuit and the relatively low impedance of the C2, this difference is constant, usually about
emitter circuit. In fig. 6 the same result is 455 kc/s.

-V2

r--
t
I
I

OSCILLATOR c) 1 >-
TRANSFORMER )):(l I
To I.F. Artplfier
FERRITE
ROD
-st
I

13
I TC
I
V,:i.___I
1L5 I
?._

AERIAL I

L2 L3 L L4 I
___i

C2
C4

CI

Fig. 5 A commonly used type of Autodyne Converter with Emitter Ine&ion

6 TRANSISTOR SUPERHET RECEIVERS

In fig. 7 two more variations of the autodyne provides about 20 db. of audio amplification.
are shown. These are what is known as the RI provides the audio load. C2 has to be a high
base injected autodyne because the local oscil- value electrolytic to prevent degeneration at
lator signal is fed to the base rather than to the audio frequencies. Cl and C3 must be carefully
emitter. In 'his type of circuit the transistor selected so as to bypass most of the R.F. with-
operates as a common emitter unit both as a out offering a low impedance of the A.F. signal.
mixer and as an oscillator, otherwise the opera Typical values for these components are
tion is exactly the same as in figs. 6 and 7. 0.01 mfd.
From the performance point of view there is Although the reflex converter has not so far
little to choose between the two types but the been used in a commercial receiver, it is a rather
base injected variety requires a transistor having attractive possibility and may find a place for
a rather high cut-off frequency. This is because itself in the pocket type of receiver where com-
any transistor will oscillate at a much higher ponent economy is important both to reduce
irequency in the common base mode than it will the size and the cost.
si the common emitter mode. The mixer action,
however, requires a fairly high frequency tran- THE I.F. AMPLIFIER
sistor so the overall difference is only slight. In The output from the converter is fed to an
Great Britain emitter injection appears to be I.F. amplifier which may consist of 1, 2 or 3
almost universal whilst the Japanese receivers stages. The choice depends upon the sensitivity
mainly use base injection. Both types are used and selectivity required by the designer. The
in the United States. majority of receivers use two I.F. stages with
single tuned I.F. transformers but a well
Fig. 8 shows a rather unusual but nevertheless designed receiver with only a single I.F. stage
practical type of circuit. The transistor operates is capable of very fair performance.
as a converter in the normal way giving the Either the grounded emitter or the grounded
usual conversion gain of about 20 db. The out- base configuration may be ased. Althougn the
put is then amplified by the I.F. stages and tormer gives higher gain and is far more popular
demodulated. The audio output is then fed back It usually requires neutralisation while the
to the base of the converter transistor which grounded base type does not.

-ve

OSCILLATOR
r-- A I

TRANSFORMER Oil'
sc.)
To I. F. Amplifier

FERR ITE T
ROD
AERIAL
C)11
CAI
C)
II
C.) I:
I

Fig. 6 An alternative type of Emitter Injected Autodyne Converter

 TRANSISTOR SUPERHET RECEIVERS 7

-Ye

--\iA ,

diV .cl ,k...,

cdIt.,
I

)1
_J I

T __I
I

III
767_,)0)1

A B

Fig. 7 Two forms of the Base Injected Autodyne Converter

-Ye

RI CI
A. F. Output

I-

Qi,
.)11 1, I MOM G)
'+
1
(, >
.0) k., Output
Jim_
-))11c. I
. I
I. F.
).IL,
. -.),!ft:" 1
.-..--)1
L__

C3 C2
A.F. Input from Detector

Fig 8 Base Injected Autodyne Converter re flexed to provide A. F. Gain

8 TRANSISTOR SUPERHET RECEIVERS

-ve

RI

+T2 To A. F. Amplfier
).(j ,

c.)

From Oscillator

R3 R2

Fig. 9 Single Stage neutralized I. F. Amplifier with double -tuned I. F. Transformer

-ve

To A. F. Amplifier
+

Fig.IO Two Stage I. F Amplifier with single tuned I. F. Transformers

 TRANSISTOR SUPERHET RECEIVERS 9

Fig. 9 shows a typical single stage grounded in the same way as in the R.F. amplifier. As
emitter amplifier. The output from the convener the internal resistive feed back of the transistor
is selected by a double tuned I.F. transformer is very small it is usually ignored, the external
T1. Double tuning is used to improve the negative feed back being entirely capacitative
adjacent channel rejection and is usually un- as provided by C2 in fig. 9.
necessary with two stage amplifiers. The trans- Fig. 11 shows the basic form of a common
former has to be carefully designed so as to base I.F. amplifier. Although the power gain
match the output impedance from one stage to per stage is lower the noise level is also reduced
the far lower input impedance of the next stage. and the maximum frequency of operation is
A fairly small mismatch may result in a con- much higher for any given type of transistor.
siderable loss of gain. The collector is usually
connected to a tapping on the primary to reduce THE REFLEX I.F.-A.F. AMPLIFIER
the effect of changing the transistor for another The reflex amplifier was devised and used in
of the same type. the early days of valve receivers when the saving
The collector current is normally stabilised of the price of a valve was very considerable.
by the potential divider R1, R2 and the resis- With transistors, the reflex circuit is much less
tance in the emitter lead R3. To prevent troublesome because the amount of feed back
overloading by strong signals, however. A.G.C. required to produce oscillation is far greater and
is applied from the detector. The variation in so there is little likelihood of this finding its way
the voltage from the detector controls the base back with the A.F. signal.
bias which, on strong signals, reduces the The circuit most usually used is shown in
collector current of the stage. When two stages fig.12. The A.F. output from the detector is
of I.F. amplification are used A.G.C. is applied fed back through R2 and Cl to the base of the
to the first stage only which has a collector transistor. It has to pass through the secondary
current of about 0.5 ma. The second stage has of the I.F. transformer but, as this consists of
its collector current controlled at about 1 ma. only a few turns, it offers a negligible impedance
so that it is always providing maximum gain. to the A.F. signal. The audio output is
I.F. amplifiers require stabilisation with most developed across T1 which is bypassed at radio
types of transistor now in use. This is achieved frequencies by C2. The collector current should

-YC

JIL
To A F. Amplifier
I
1

I.F. in

Fig.I I A typical form of Common Base I. F. Amplifier

10 TRANSISTOR SUrIiRHET RECEIVERS

be about 1 ma. If only one stage of I.F. ampli- also be used with several advantages.
fication is used then Cl will probably be in Fig. 13 shows a class B power detector which
'parallel with R2 so that the diode is D.C. not only demodulates the signal 'but also
coupled to the transistor and thus provides supplies a power gain of about 10 db. Because
A.G.C. The disadvantage with this is that the of this gain, which is effective at d.c. as well
A.F. gain varies with the R.F. gain. as A.F., the provision of a sufficiently high level
The power gain of a normal I.F. stage is of A.G.C. is simplified.
about 35 db. and the gain of a reflex stage ig The output from the detector consists of the
between 30 and 32 db. for I.F. and about 25 A.F. signal, a certain amount of residual I.F.
to 30 db. for the A.F. If transformers are used signal, and a d.c. potential. The latter is selected
to match me output from the detector to the by R2, C2 and fed back to the first I.F. stage
base and from the collector to the output stage to provide A.G.C. Most of the audio output is
the A.F. gain may be increased to nearly 40 db. developed across R1 which is a potentiometer
From this it may (be seen that the reflex used as the volume control of the receiver. The
amplifier saves power, space and expense. It is required amount of audio is taken from this
considerably more difficult to design, however potentiometer to the audio amplifier.
once an operating circuit has been designed no A Surface Barrier transistor such as those
real problems arise in reproducing it. made by Semiconductors Ltd., performs very
well indeed as a detector providing a power gain
USING A TRANSISTOR FOR of up to 20 db. from as little 'as 3 volts power
DETECTION supply. The reasons for the superiority of the
The majority of transistor superhets use a surface barrier transistor in this type of circuit
germanium diode for detection and automatic will be discussed in the section devoted to
gain control. This type of circuit was illustrated components.
by the I.F. amplifier diagrams. If an N.P.N. The way in which a transistor operates as a
transistor is used in the I.F. 'stages then the detector is very simple. The base bias is con-
diode should be reversed. trolled so That the transistor operates near the
Although the diode performs the function point of collector cut-off. In this condition the
is transistor operates in a nonlinear portion of the

RI

c) II \.1

A.F. Output
r-
CI
From previous 0--11
or
IT
ConverterI
I. F. Stage
I cJr)

-4-A.F.
R2

A.G.C.

C2

Fig. 12 Common Emitter Reflex I. F. -A. F. Amplifier

 TRANSISTOR SUPERHET RECEIVERS 11

transfer curve so that detection takes place in When designing an audio section the follow.
the emitter diode. When there is no signal ing considerations are most likely to govern the
applied to the base the output of the transistor choice of circuit. Firstly it must be decided what
has a very high resistance and the collector is level of output power is required, this may be
almost at the potential of the negative side of any value from 1 mw. for a wrist or small
the battery. When a signal is applied, however, pocket receiver feeding an earpiece, to 5 or
the output resistance drops and lowers the even 10 watts for a powerful car radio. Having
collector voltage. It is this change in voltage decided what kind of output is required tnc
that is used to provide the A.G.C. power gain needed to amplify fix., small output
When only one stage of I.F. amplification is from the detector must be determined and this
used the detector is sometimes made regenera- dictates the number of stages. Consideration
tive so that it provides some I.F. gain. In this must also be given to the amount or distortion
case the collector current should be slightly that can be tolerated. Finally there is the very
nigher to increase the I.F. gain of the transistor important point of power consumption. Most
even though this means a slight reduction in of the drain on the battery is due to the driver
detection efficiency. Regeneration is usually and output stages, the R.F. section consuming
applied by means of a feed back loop. Circuit a total of only about 2 ma. It is important to
diagrams of the many different types of re- realise that the circuit which uses the fewest
generative detector are given in "Practical transistors is not necessarily the most econo-
Transistor Receivers Book I" published by the mical from the power point of view.
publishers of this book. Fig. 14 illustrates an extremely popular form
THE A.F. AMPLIFIER of audio section. The input is taken from the
All the units so far described may be used in receiver volume control which' acts as a load
any broadcast band superhet irrespective of the to the detector. The signal is fed to the driver
application. The audio amplifier however, must transistor which is a high gain common emitter
be chosen carefully to suit the type of receiver amplifier. The load for TR1 is the primary of
required. It is no use putting a 15 mw. output T1 the phase splitting transformer. The secon-
stage in a car radio. dary of Ti is centre tapped and feeds into the

-ye

C4 To Audio Amplifier

From I, F. Stage I Oja A

RI R2
1)11/4

-J A.V.C.

CI C2 C3
T+ +

Fig.I3 Typical Class B Power Detector

 12 TRANSISTOR SUPERHET RECEIVERS

symmetrical output stage consisting of TR2 and more economical on components. In the case
TR3. These two transistors form a common of a car radio, where battery economy is rela-
emitter, Class B, push-pull amplifier. The tively unimportant, the Class A type, using a
reason for using the far more expensive Class power transistor is usually used. It is also used
B type of output, even in many pocket receivers, when the required output is only a few milli -
is the superior battery economy. The maximum watts as in this case the consumption will be so
efficiency of a Class B stage is nearly 80% low anyway that the added cost of the Class B
compared with less than 50% for a Class A would be unjustifiable.
output stage. With no signal applied to a
Class A stage the biasing is such that the In the circuit shown the transistors are used
dissipation is twice the amount of power that in the common emitter mode. Although this
amplifier is capable of delivering to the load. form of connection incurs greater distortion
With a Class B type, however, there is hardly than the common collector type it is almost
any dissipation in the absence of a signal. invariably used because of the increased gain.
Another advantage of this type is that it is Unless the two transistors have fairly similar
capable of 5 times the output power that a Class characteristics, distortion can arise. For this
A stage, using the same type of transistor, can reason, transistors designed for output stages,
deliver. Finally as the power consumption is such as the 0072, are often sold in matched
directly proportional to the input signal instead pairs. If one pair breaks down it is often neces-
of inversely proportional the actual difference sary to replace them both, but in many cases
in efficiency is far better than the maximum the effects of a mismatch are minimised by the
theoretical efficiency figures would seem to in- application of about 10 db. of negative feed
dicate. For example, if we assume that the back.
average output level on speech or music is 25%
of the peak output, then the Class B type will The primary of the output transformer is
be about 5 times as efficient as the Class A. centre tapped and, as the power supply for the
On the other hand the Class A type provides two transistors travels through this in opposite
greater gain with transformer coupling and is directions, there is no resultant d.c. in the trans -

-6v to -9v

TI TR2
T2
From Detector TR I
I

TR3

Fig. I4 A Typical Audio section using a Class B push-pull Output Stage

 TRANSISTOR SUPERHET RECEIVERS 13

former winding. This means that the size of the The impedance of the speaker usually lies
transformer may be small compared with a between 40 and 80 ohms. Two forms of connec-
Class A output transformer handling a similar tion are possible. If there is no objection to
amount of A.F. power. T2 may be, and often is, the use of two batteries then the type designated
replaced by a centre tapped loudspeaker of by the letter A may be used, but if for some
suitable impedance. As there is no standing d.c. reason only a single battery is used then the
the cone will not be permanently displaced. speaker must be connected in series with a high
Fig. 15 shows another type of amplifier with value electrolytic capacitor. Cl, which should
a Class B output stage. In this case, however, have a value of at least 100 mfd. if it is to
the output is single ended so that no centre offer a high impedance to the lower frequencies.
tapped transformer or loudspeaker is required. A small amount of negative feed back is
Using a centre tapped speaker in the sym- applied via R1 to reduce the distortion.
metrical type described above results in a
halving of the acoustical efficiency, or, alter- The turns ratio of the interstage transformer
natively, the loss inevitable in the use of a will depend upon the transistors used and the
transformer is incurred. This means that the output power. Both the primary and the two
single ended type is about twice as efficient secondarys should have as low resistances as is
from the point of view of acoustical power possible with an inductance of about 5 henries.
delivered for a given power consumption. As Fig. 16 shows an interesting form of push-pull
the two transistors are in series across the power amplifier which requires neither an interstage
supply, each transistor operates from only half nor an output transformer. It makes use of the
the total voltage. However, for the same fact that an N.P.N. transistor requires a positive
acoustical output and using the same total bias for the collector and the base whereas a
battery voltage, the single ended circuit still uses P.N.P. transistor uses negative biases. This
only slightly more than half the power used by makes possible the design of complementary
the symmetrical circuit. For this reason the symmetrical circuits such as this one. The
fig. 15 type of circuit is the most suitable for
advantages of this circuit over those shown in
the very small pocket types of receiver now figs. 14 and 15, are obviously economy of space
being made. and expense. The gain is less than the other

From Detector

RI

Fig. I5 Audio Section with single ended push-pull Output

14 TRANSISTOR SUPERHET RECEIVERS

types, however, and the distortion is likely to of the output of the transistor, which is, of
be somewhat higher owing to the difficulty of course, out of phase with the input, is used to
obtaining N.P.N. and P.N.P. transistors in drive the other half of the push-pull pair. Thus,
matched pairs. Negative feedback is applied in if the circuit is properly designed, the outputs
the output stage by connecting R1 and R2 to from the two transistors will be equal and of
the collectors of the transistors rather than to opposite phase and therefore suitable for driving
the negative side of the battery. Until manufac- a centre tapped loudspeaker. This type of
turers produce matched pairs of transistors circuit is very dependent upon the gain of the
which are complementary to one another, this transistors so that individual adjustment would
type of circuit is unlikely to be exploited. be required for every amplifier making mass
production of the circuit difficult.
It is possible to devise transformerless push-
pull circuits using only P.N.P. transistors. For
example, the driver transistor may be used as a AUDIO AMPLIFIERS WITH CLASS "A"
phase splitter by putting equal loads in the OUTPUT
collector and emitter leads. The outputs from
the collector and the emitter will then be The advantages of the push-pull Class B type
approximately equal and of opposite phase and
may be used to drive the push-pull output. This of output were thoroughly expounded in the
method is not normally used because of the low last section. There are several advantages in
overall gain. The phase splitter will always have using a Class A output however, and in some
a voltage Rain of slightly less than 2 times due applications these outweigh the disadvantages.
to the degenerating effect of the emitter
The table below shows up the advantages. It
resistance.
compares the results obtained with the same
type of transistor in Class A and Class B
Another method which requires no special amplifiers. The transistor used in the compari-
phase splitter has been devised. The output son was a high power type capable of a total
from the driver stage is fed to only one of the dissipation of 25 watts at 25°C using an
transistors in the output stage. A small portion infinite heat sink.

1
MMI
MM.
N. P. N.

R2

From Detector ./
I

RI

P. N P

I F-

Fig. 16 Audio Section with Transformerless push-pull Output using P N. P. and N. P N. Transistors
 TRANSISTOR SUPERHET RECEIVERS 15

Class A Class B push-pull (36 - 25) + 6 db more power gain. That

Available power gain is
another 17 db. This extra gain must either be
36 db 25 db provided by an additional stage of resistance -
Maximum power output capacity coupled audio amplification or a trans-
2.5 watts 10 watts former coupled stage must be used where an
Distortion at max. power output R -C stage would normally be sufficient. Which-
3.5% 50/0
Initial cost ever method is used, the final cost of the output
x
stage of a receiver using Class B output will be
nearly 2x more than twice that of the Class A type. For
This table shows that the gain of the Class A this reason the Class A output stage is some-
stage is 11 db higher and the distortion is lower. times used by manufacturers wishing to produce
The cost is only about half that of the Class B a cheap and compact receiver.
stage.
The amount of output power that may be
Now let us consider two similar receivers. obtained from a transistor is dependent upon
The only difference between them being in the the heat that can be dissipated. The question
audio sections, the frequency changers, I.F. of suitable heat shunts will be discussed later
amplifiers and detectors are identical. We are but it is obvious that there is no room in an
not too worried about output, 2.5 watts will average portable receiver for more than a very
suit us just as well as 10 watts, after all, we are small shunt. In a car radio, however, the output
unlikely to need more than about 100 mw. out- transistor may be fixed to a large metal heat
put power most of the time. The output from shunt away from the rest of the receiver. In
the detectors is the same and we must provide practice the transistor is frequently attached to
sufficient gain before the output stages to drive the loudspeaker mounting. As a car has a large
them to their maximum output level when accumulator, which can supply several amps
necessary. But the output level of the Class B when necessary, the question of obtaining maxi-
stage is 6 db higher than that of the Class A mum power efficiency does not arise. Thus a
stage so the rest of the audio section in the Class A output stage, with a single high power
receiver using this type of output must supply transistor is frequently used.

Fig. l7 Two common forms of single ended Output Audio Stages

16 TRANSISTOR SUPERHET RECEIVERS

Two types of audio amplifier with Class A electric current but a relatively low resistance
output stages are shown in fig. 17. Type A uses to the conduction of heat. This system makes
resistance capacity coupling between the driver the previous precautions unnecessary.
and the output stage and type B uses trans- Three, rather than two, stages of post detector
former coupling. R -C coupling gives better amplification are often needed to provide
fidelity but considerably less gain. When high sufficient gain. In this case a third transistor
outputs are required transformer coupling is stage similar to the driver will normally be used.
invariably used because R5 and R6 would have There is another very attractive possibility
to have very low values to supply sufficient however. This is shown in fig. 18. Direct coup-
current to the base and they are effectively in ling is used between each stage. R2 provides
parallel with the transistor input causing a con- the base current for TR3 and the collector
siderable loss of power. The secondary of the current for TR2 whilst R1 provides the base
interstage transformer in fig. 17B will have a current for TR2 and the collector current for
very low impedance with high power transistors TR1. Once the current in the output stage has
so the coupling capacitor C must have a very been decided upon the current required by the
high value. Values of 500 muf. are not un- base is known to be very nearly beta times
common. Sometimes, when a heat shunt is re- the collector current where beta is the current
quired it is desirable to be able to connect the gain of the transistor. Thus R1 and R2 are easily
collector directly to the receiver chassis. In this calculated if one remembers that the collector
case the rest of the receiver must be isolated current of TR2 will be equal to the base current
from the chassis. Alternatively the negative side of TR3. Because direct coupling enables the
of the battery may be connected to the chassis transistors to amplify D.C. as well as A.C., the
and the output load connected in the emitter. three transistors act as a single transistor having
The collector will then be at H.T. negative and a beta equal to the products of the betas of
may be connected to chassis via the outer case TR1, TR2 and TR3 and leakage current equal
of the transistor which is usually in contact with to the leakage current of TR1. This means that
collector in high power transistors. Sometimes the circuit may be stabilised as a single unit
the transistor casing is isolated from the chassis with a resultant saving of components. A con-
by a material which offers a high resistance to siderable amount of d.c. feed back must be

-ve

RI R2

TRI TR2 I &(TR3

R4

R3
=cI

Fig. IB Basic Three Stage Audio Section using Direct Coupling.

High performance is obtained with few components
 TRANSISTOR SUPERHET RECEIVERS 17

applied because of the very high beta (64,000 sistor is an N.P.N. type and operates as a
or more). In this case it has been provided by common emitter amplifier. The gain of fig. 20
taking the base bias for TR1 from the collector is therefore comparable with the fig. 17A type
of TR3 via R3 and R4 which should have a of circuit, without the latter's expense. In some
total value of about 10k ohms. To prevent these foreign receivers, the last I.F. stage is reflexed.
resistances from feeding back at audio fre- and an N.P.N. transistor is used so that the I.F.
quencies a large value electrolytic, Cl, grounds transistor may be directly coupled to the output
the A.F. feed back before it can reach TR1. stage.
Apart from the advantage of economy of com-
ponents the circuit has excellent base frequency The number of transistors used in a superhet
response due to the direct coupling. If the de- will vary from 3 or 4, for a cheap pocket
tector is also direct coupled to TR1 then the portable, to 8 or more for a car radio. Some
output from TR3 may be used to apply A.G.C. American car radios use as many as 13.
to the I.F. amplifier taken, perhaps, from the The examples of circuits that have been
junction of R3, R4 and Cl. shown by no means exhaust all the possibilities.
Fig. 19 shows another type of direct coupled For example, it should be possible to reflex
amplifier that is sometimes met. TR1 is a the I.F. stages so that they act as a Class A
common collector stage directly coupled to a push-pull output stage. As better and more
common emitter stage, TR2. As TR1 is a com- varied transistors become available, new types
mon collector amplifier it has a high input of circuit will certainly be developed and used.
impedance which matches the high output im- Various types of tetrode transistors show
pedance of a transistor detector. TR1 and R1 promise at high frequencies and these may form
form a potentiometer to supply the base bias the basis for F.M. receivers within the next few
to TR2. The voltage dropped across TR1 will years.
vary with the innut signal and thus vary the
bias supplied to TR2. THE COMPONENTS
A similar circuit in appearance is shown in R.F. Coils: The development of the ferrite
fig 20. In this case. however, the driver tran- rod aerial has greatly simplified the problem of

-ve

RI!

Fig. I 9 Two Stage direct -coupled A. F. Section

18 TRANSISTOR SUPERHET RECEIVERS

signal pick up in small portables. The signal matdh an output impedance of about 20 k ohms
supplied by a ferrite aerial depends upon the to an input impedance of about 1 k ohm thus
length and diameter of the rod. For this reason their turns ratio must be about '120 1 or about :
the rod should be as long as the size of the case 4.5 1. The turns ratio of the output will
:
will allow. Increasing the diameter will increase depend upon the speaker used.
the Q of the tuned circuit so as large a diameter
as possible should be used. Separate windings Resistors: Most of the resistors in a transistor
are made for the long and medium wavebands superhet never have to dissipate more than a
and these should be separated to avoid damping few milliwatts so that the question of power
of one by the other. When the receiver is rating need not be considered. Although resis-
switched to the medium waveband the long - tors are now made with ratings as low as 1/30
wave coil is usually shorted to prevent it from of a watt, the type most generally used is the
resonating at a frequency within the medium standard watt size as this is, at present, the
waveband by means of its own capacity. The most economical. The variable resistance used
inductance of the winding will depend on its as the volume control is frequently of the rim
position along the rod, maximum inductance control or hearing aid type usually incorporat-
being obtained when the coil is exactly in the ing a single pole switch. This type is used in
centre. This property is used by winding the preference to the spindle control type because
coil on a sleeve which can slide freely along the of its smaller size, lighter weight and the ease
rod so that the inductance may be varied when with which it may be attached to a printed
trimming the receiver. When the correct position circuit board.
is found, the coil is anchored by a blob of wax
or glue. Capacitors: Because of the low input and
output impedances of the transistor compared
Audio Transformers: These differ from those with those of the valve, the value of the
used in valve circuits only in that their resis- capacitors must, in general, be higher if they are
tances must be much lower owing to the low not to impede the signal more than a small
impedances involved, and their impedances need amount. The coupling and de -coupling capaci-
not be so high. Interstage transformers must tors in the audio section usually have a value

Fig.20 Two Stage A.F. Section using P. N. P & N. P. N. Transistors

 TRANSISTOR SUPERHET RECEIVERS 19

of about 8 mfds. and the battery de -coupling methods explained below :

capacitor may be as high as 200 mfds. Never- EQUIPMENT. The tools and materials
theless the physical size of these components necessary are:
need not be large as they are required to operate
only at very low voltages. Tuning capacitors are 1. A soldering iron with a 3/16th inch chisel
usually of the two gang type with an aerial type bit of not more, preferably less, than
tuning section of about 200 pf. Although most 60 watts rating. A miniature instrument iron
tuning capacitors use an air dielectric a new of 25 watts rating would be most suitable.
type has recently appeared with polythene die- 2. Diagonal wire cutters.
lectric. Because of the high dielectric strength 3. Pointed -nosed pliers.
of polythene, these capacitors are extremely 4. Small and medium screwdrivers.
small, usually about one inch square by of an 5. Tweezers.
inch deep. 6. Small gauge 60 tin/40 lead resin -cored
solder.
Printed Circuits: Almost every transistor 7. Appropriate measuring instruments.
receiver now manufactured uses printed wiring. The following additional items may usefully be
It is not hard to see the reasons for this. Once added to the list:
designed and proved to be reliable, a receiver 8. Magnifying glass.
may be mass produced without any fear of
instability arising through misplacement of 9. Soft wire brush.
components, no wiring errors are possible and CIRCUIT TRACING. The layout diagram
the finished article is neat, logical and, above in a service manual is commonly made from the
all, compact. Cossor Radio & Television Ltd. same original as the printed circuit, making it
have published a leaflet describing the servicing easy to collate one with the other and interpret
of printed circuits and I would like to thank any service instructions which may be given.
them for their permission to quote from this In the diagram, moreover, the components will
leaflet. often have been superimposed on to the printed
circuitry to give the effect of a view of both sides
COSSOR of the panel at once. It is possible to obtain the
same effect in practice by holding the board,
The Servicing of Printed Circuits which is translucent, against a strong light, or,
more conveniently, by placing a lamp behind
INTRODUCTION. Among the many advan- or under the board, when the other side will
tages to be gained from the use of the printed show through.
circuit, not the least is the ease of servicing.
Many of the problems encountered in the heavy Note: Where both sides of a board contain
chassis, long leads, and lack of uniformity of components and/or both sides have been
wired equipment have gone, and in their place printed, the printed or foil side means the side
is convenience, and order. It remains however, opposite to the component being considered, or
for method to be adjusted to the new technique, conversely.
and the recommendations which follow are in- TESTING. In general, measurements are
tended to help the student or engineer who is made more easily from the insulated side of
meeting the printed circuit for the first time. the board by applying the instrument probe or
clip directly to the leads of a component. If
Fundamentally, a printed board is a pattern measurements have to be made on the conductor
of copper foil bonded to an insulator base into side care must be taken not to damage the foil.
which holes have been punched for the inser- REMOVING COMPONENTS. Most com-
tion of components and/or leads. The foil ponents may be removed in either of the two
provides the circuit connections and, frequently, following ways:
some of the circuit components. Additional
patterns of foil which might appear to have no (i) By cutting the leads or tags of a component,
function are included to ensure equal distribu- then heating the joint and pulling through
tion of heat during the manufacturing dip - the lead from the component side.
soldering process. (ii) By cutting the leads or tags of a component,
then heating the joint and pulling through
The essential aim in servicing printed circuitry the lead from the foil side.
is to examine and repair the assembly with In (i) the leads may best be gripped with
least disturbance to the printed board. This may pliers, in (ii) tweezers will generally be found
be accomplished most effectually by using the more suitable.
20 TRANSISTOR SUPERHET RECEIVERS

It is often unnecessary to cut the leads of taken off the board together. The four or more
small components such as half -watt resistors. connections of the I.F. transformer itself are
Pulling the components gently but firmly away usually best freed by heating each tag in turn,
from the board with the hand as each joint in then canting the transformer away from the tag
turn is heated will usually free it. as the solder melts.
Care must be taken not to apply too much Coils, Chokes. These may be removed
heat to the board. A clean, fully -heated solder- similarly to I.F. transformers or resistors,
ing iron with a small diameter bit may be according to which they resemble. The corres-
applied for long enough to remove a simple ponding remarks will then apply.
joint or make a new one. Overlong application
will cause overheating of the board and the Valveholders. If sufficient tag is showing
foil will rise. between component and board the tags may
The solder on difficult joints should be re- first be cut, releasing the valveholder, and then
moved in stages until the lead or tag is free removed separately. It may sometimes be found
enough to be withdrawn. This may be done easier or necessary to break the valveholder.
either by taking off the solder a little at a time Note : Where a component is soldered to foil
with the soldering iron, or by repeatedly heat- on both sides of a board, it will usually be
ing the joint and flicking off the melted solder found that the heating of one side will also melt
with a soft wire brush. The first method is pre- the solder on the other, so that the lead or tag
ferable as it precludes the likelihood of flicking may be withdrawn at one go.
solder in unintended directions.
Replacing Components. Usually, the style of
Treatment of individual components is given removing a component will determine the way
below :
of replacement. Treatment of individual com-
Resistors. Small resistors may be removed ponents is therefore unnecessary.
as already described, larger ones, especially The new leads should be bent or crimped in
power resistors with heavy, closely -aligned, such a way as to make a firm mechanical con-
multiple tags are differently dealt with. The tact with the surface of the foil. Leads and tags
simplest method is to cut all the tags on the should be cleaned and, where necessary, tinned
component side of the board, then to heat and prior to jointing so that the solder will run
remove each tag separately. easily and shorten the time necessary for the
Thermistors. Proceed as with resistors. application of heat.
Transistors, Germanium Diodes, and other Precautions:
semiconductors. Proceed as with resistors, but 1. Do not apply too much heat to the board.
if the component is to be used again, prevent Only an iron whose bit is thoroughly clean
damage to it by using a heat shunt (see should be used, and only when fully heated.
"Precautions").
2. Remove difficult connections in stages.
Capacitors. Those of the small ceramic, When necessary, a simple heat shunt may be
silvered mica, moulded mica, and midget elec- provided by gripping the leads with the pointed -
trolytic variety may be removed in the same nosed pliers, or by holding the pliers firmly
way as resistors. The removal of the larger against the lead and adjacent foil.
mica, paper, and electrolytic types will be dic-
tated by the style of mounting and should be 3. Use only sufficient solder to ensure a sound
evident from inspection. joint. Excessive solder increases the possibility
Electrolytics of the upright mounting type of heat damage and the creation of short-
circuits between neighbouring conductors.
may be easily removed by heating each tag in
turn and then pushing the tag inwards, into its 4. Clean the board on completion of a repair.
slot and away from the foil, when the solder The soft wire brush may be used to remove
is fluid. Other than printed circuit electrolytics small globules of solder still adhering to the
in this mounting may be removed similarly to board. The entire side should be brushed gently
I.F. transformers. but thoroughly.
1.F. Transformers. The component should 5. Avoid subjecting the board to excessive
first be examined to determine its style of mechanical pressure or strain. This must be
mounting. Some transformers possess a can borne in mind when removing and replacing
which is separately clipped into the board, while boards and their components, or if carrying out
with others the can and transformer must be any structural modifications.
 TRANSISTOR SUPERHET RECEIVERS 21

CHAPTER TWO

TRANSISTOR SUPERSET KITS

One of the finest ways of gaining experience pleasant looking rexine covered case is supplied
with transistor superhets is, of course, to build with the kit.
one. There is an excellent range of kits now
available on the British market, ranging from THE REPANCO
pocket receivers, such as the Mini -7, to com- The Mini -7 receiver is called a pocket radio
pletely transistorised car radios, some of these by the manufacturers but, although it is ex-
make use of printed circuit boards which not tremely small by normal standards, you would
only simplify construction but also give the need a somewhat accommodating pocket to
finished product a professional appearance. My keep it in. I think the term personal portable
thanks are due to Henry's Radio Limited, might be more appropriate.
Repanco Limited, Weymouth Radio Manufac- This circuit also uses common base amplifiers
turing Company Limited, and the Teletron for the I.F. stages but only two transistors are
Company Limited, each of whom kindly gave used. A.G.C. is applied to the base of T2 by R8.
me permission to include their circuits and data The only thing unusual about the audio section
in this chapter. is the use of direct coupling between T4 and
T5 which saves two resistors. The push-pull
HENRY'S RADIO TRANSISTOR '8' output stage delivers a maximum of about
The circuit diagram of the Transistor '8' is 100mw is more than
shown in figure 21. As the name implies eight sufficient for a set of this size.
transistors are used which is two more than Assembly Instructions
the usual six transistor commercial receiver. 1. Use an instrument type soldering iron.
TR1 is an emitter injected antodyne converter 2. Use only specified components.
of normal design. The I.F. amplifier is rather 3. Follow the instructions exactly.
less orthodox using as it does, three stages of 4. Check every step very carefully before
common base amplification resulting in ex- attempting the next.
tremely good selectivity, sensitivity and adjacent Stage I
channel separation. As the transistors are
1. Cut the spindle of R9 (10K pot : with S.P.
operated in the common base mode no neutra-
lisation is necessary and the high sensitivity switch) to 5/32".
makes the receiver ideal for use as a car radio. 2. Remove the first locknut from R9 and run
A diode, D1, is used for demodulation and is the other further on to the threaded bush
coupled to the A.F. amplifier via VR1, which of R9. Fit R9 to the 17/S group board
acts as volume control, C16 and R.F.C.1. pre- through hole D, with the spindle on the
venting any residual R.F. from reaching TR5. TOP side as shown in the Stage One
The A.F. amplifier uses two common emitter diagram. Adjust the two locknuts so that
stages before the output stage which is of the the body of the pot : is 1" below the group
symmetrical push-pull type and feeds into a board, turn the body of the pot : round
centre tapped speaker. The high gain of the so that the three solder tags are pointing
A.F. section is useful if you wish to use it to inwards (see the Stage Two diagram), and
amplify the output from a record player. In the tighten the lock nuts.
circuits shown A.G.C. has not been incor- 3. Cut the spindle of the Jackson Bros. type
porated. It may, however, be added as follows : `00' gang to 5 /16".
Change C11 to an 8 microfarad electrolytic and 4. Solder 4" of GREEN P.V.C. connecting
then connect a diode and a 4.7K ohm resistor wire to the right hand tag of Cl (front
in series with pin 3 of I.F.T.4 and the base of section of '00' gang) and leave free. Solder
TR3. 4" of RED P.V.C. connecting wire to the
right hand tag of C2 (rear section of '00'
The receiver uses a 7" x 4" elliptical speaker gang) and leave free. To determine the
which is sufficient to fill even the largest room right hand tag hold the gang, vanes upper-
with sound of very reasonable quality. A most, and view from the rear.
 tv)

Inter-stage
Transformer.

Med.

Long IV
w S.2.
1
Off.
d
.1-7-
8 CAL
1

Red. E Loose Wire.

-Collector Tog connections,
Spot L.5 & IFfs.
Bose.- -Emitter L.4,
E
5r1 C
g

Fig. 2$. Circuit of Henry's Radio Transistor "8"

 C.13.
0 01 p.F 001.4E ,

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3.3.K. salsa 33Eiri.
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OC.44.
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Key to Transistor Connections.
TC.1 & TC 2.
2x 60pF Trimmer Block.
0 13c,:e
Fig. 22.
Key to X T6 e XT7 Collector Emitter
Theoretical Circuit for Mini -7 MK II. Pin Connections.
Base.

11.11...
24 TRANSISTOR SUPERHET RECEIVERS

5. Fit the gang to the 17/S group board, (e) Connect pin 5 of XT6 (2nd IFT) to
spindle on TOP through hole 0, and secure the solder tag on the can of XT6.
with 3 4BA x *" bolts, through holes N, (f) Connect pin 5 of XT6 (1st IFT) to the
Q and P, with 4BA solder tags at N and solder tag on the can of XT6.
Q. Fully close the gang and file a flat
1/16" deep parallel to the edge of the (g) Connect pin 2 of X08 to the solder
group board as shown. Push the four tag on the can of X08.
solder tags of the gang in towards the body (h) Connect the solder tag under the bolt
of the gang so that they do not protrude. at N to the tag on the can of the 2nd IFT
6. Fit the 4 speaker stand off pillars on TOP as shown. Connect this point to eyelet
of the 17/S group board, using 4BA x *" No. 11.
countersunk bolts through holes A, B and (i) Join the solder tag at T to the solder
L and a 4BA x /" bolt at G. Fit a 4BA tag at Q.
solder tag both sides of the board at B,
i.e. under the pillar on top and under the Using P.V.C. covered connecting wire proceed :
bolt underneath the board. 13. Connect eyelet No. 3 to eyelet No. 8.
7. Fit the 3rd IFT coil (XT7) at C, so that 14. Connect eyelet No. 1 to pin 3 of XT7.
the can is on the underneath side and the
connecting pins are on the TOP side, in 15. Connect pin 1 of XT7 to eyelet No. 7.
the position shown and secure by bending 16. Connect R6 (220K) from pin 3 of XT7 to
over the tags on the can. eyelet No. 6.
8. Fit the 2nd IFT coil (XT6) at F, ensure the 17. Join pin 3 of XT7 to eyelet No. 9.
pins are in the position shown, bend over 18. Connect R20 (3.3K ohms) from pin 3 of
the solder tags on the can to secure. 2nd IFT (XT6) to eyelet No. 9.
9. Fit the 1st IFT coil (XT6) at M, checking 19. Connect R3 (82K) from pin 3 of XT6
the pins are as shown and secure as before. (2nd IFT) to eyelet No. 14.
Make sure the solder tags of the '00' gang 20. Connect R2 (10K) from eyelet No. 12 to
do not touch the can of the IFT. the solder tag on the can df the 2nd IFT.
10. Fit the oscillator coil (X08) at K, check 21. Connect 4" of connecting wire to eyelet
the pins are in the correct position before No. 16 and push the free end through hole
securing. R.
11. Insert a 6BA bolt through hole T, head 22. Connect pin 2 of XT6 (1st IFT) to pin 5
on the underneath side of the group board, of X08.
follow with a 6BA washer on the top side, 23. Connect R1 (330K) from pin 3 of XT6
then the wavechange switch lever (position (1st IFT) to eyelet No. 17.
as shown), another 6BA washer, a 6BA 24.
solder tag and a 6BA nut, tighten until Connect R19 (270 ohms) from pin 3 of
the switch lever has a nice firm action over 1st IFT (XT6) to eyelet No. 9.
eyelets Nos. 18 and 19 and then a 6BA 25. Connect C15 (250pf) from pin 4 of X08
locknut on the bolt and tighten. to eyelet No. 18.
26. Connect C13 (0.01mfd) from pin 3 of 1st
In the following instructions it is essential that IFT (XT6) to the tag on the coil can.
all wiring and components are kept as close to 27. Connect C14 (0.01mfd) from pin 3 of 2nd
the group board as possible. IFT (XT6) to the tag on the coil can.
12. Using tinned copper put in the earth line 28. Connect D2 (0A81) from pin 4 of 2nd
as follows : IFT (XT6) to pin 2 of the 1st IFT (XT6),
(a) Join the solder tags of the IFT cans, with the positive end of the diode to the
2nd IFT.
nearest to the speaker slot, together. Solder 29. Fit T1, collector (spot) to pin 1 of X08,
this wire to eyelet No. 5 and also to eyelet base (Centre wire) to eyelet No. 17,
No. 13.
emitter to eyelet No. 12.
(b) Connect the solder tag on IFT2 to the 30. Join pin 3 of X08 to eyelet No. 15.
solder tag on the can of the X08 coil. 31. Fit T2, collector (spot) to pin 2 of XT6
(c) Connect the solder tag under the pillar (2nd IFT), base (centre wire) to eyelet
at B to eyelet No. 4. Join eyelet No. 4 to No. 14 emitter to pin 1 of XT6 (1st IFT).
the earth line as shown. 32. Fit T3, collector (spot) to pin 2 of XT7,
(d) Connect pin 5 of XT7 'to the solder tag base (centre wire) to eyelet No. 6, emitter
on the can of XT7. to pin 1 of XT6 (2nd IFT).
 TRANSISTOR SUPERHET RECEIVERS 25

Stage 2 18. Take R18 (120 ohms), sleeve one wire end
1. Take the twin block of trimmers (TC1 and and solder to eyelet No. 2, leaving the
TC2) and cut off one of the mounting lugs other end free.
flush with the body of the block; so that 19. Take C12 (100mfd electrolytic), sleeve the
the '60' marking are on the inside when negative wire end and solder to eyelet
fitted. Mount the trimmer block on the No. 1, leaving the positive end free.
17/S group board under the bolt at G, 20. Mount TT 10 (Repanco miniature push-
fitting 2 4BA washers between the board pull output transformer). turn so that the
and the mounting strip of the trimmer colours are as shown and bend the clips
block, also fit a 4BA solder tag under the under the group board to secure.
same bolt. 21. Solder 11" of PVC connecting wire to the
2. Join the inside tags of TC1 and TC2 to positive battery socket and connect the
the solder tag at G. free end to contact V of Si.
3. Fit C5 (300pf) from the outside tag of
TC2, thread the free end through hole J Drawing A
and solder to pin 4 of X08. 1. Cut the BLACK fly lead from TT10 to
4. Cut the RED from C2 to length and solder length, push back the insulation and solder
to the outside tag of TC2. to the junction of R16 and R17.
5. Cut the GREEN lead from CI to length 2. Solder the positive wire end of Cl 1 (8mfd
and solder to the outside tag of TC1 (the electrolytic) to eyelet No. 4, place the
Stage 2 diagram shows these two leads canacitor at the side of the TT9 trans-
side by side for clarity, in order to prevent former as shown and leave perpendicular
the GREEN lead fouling lay it on the top to the group board.
of the RED lead). 3. Solder one wire end of R15 (1K) to eyelet
6. Connect the solder tag at B to contact W No. 4, place by the side of C11 and leave
of Si (switch on the back of R9). perp. to the group board (take care the
7. Join contact W of Si to tag Z of R9. wire end of R15 does not foul the can of
8. Fit R8 (3.3K) from eyelet 14 to tag X on Cl!).
R9. 4. Twist the free ends of C11 and R15 to-
9. Connect DI (crystal diode) from eyelet gether and solder (the components should
No. 7 to tag X of R9, with the positive not stand more than 1" off the group
(red) end to tag X. board).
5. Connect one wire of C6 (0.lmfd) to eyelet
10. Connect C8 (0.01mfd) between tags X No. 6 and leave perp. to the group board.
and Z of R9.
11. Connect C9 (8mfd electrolytic), solder the 6. Connect one wire end of R7 (47K) to
negative end to eyelet No. 10, hold per- eyelet No. 6.
pendicular to the group board and then 7. Join the free ends of C6 and R7 together
solder the positive end to tag Y of R9. and solder to eyelet No. 5, leaving the
Open and close the ganged tuning capaci- two components perp. to the group board,
tor and make sure the vanes clear the max. height 1".
components fitted. 8. Connect the negative wire end of C7
12. Mount TT9 (Repanco miniature interstage (8mfd electrolytic) to eyelet No. 14 and
transformer), turning so that the colours leave perpendicular.
are as shown in the diagram and then 9. Connect one wire end of R5 (417K) to
bending the clips under the group board eyelet No. 14.
to secure. 10. Twist the free ends of C7 and R5 together
13. Cut the BLACK fly lead of TT9 to length, and solder to eyelet No. 13, max. height 1".
push back the insulation, and solder to 11. Connect one wire end of C4 (0.01mfd.) to
eyelet No. 2. eyelet No. 12 and leave perpendicular.
14. Connect the RED tag of TT9 to eyelet 12. Connect one wire end of R4 (56 ohms,
No. 1. see note) to eyelet No. 15 and leave perp.
15. Fit R16 (330 ohms), solder one end to to group board.
eyelet No. 1, and leave perpendicular to 13. Twist the free ends of C4 and R4 together
the group board (see Stage 3 diagram A). and solder.
16. Fit R17 (6.8K), solder one end to eyelet 14. Connect one wire end of C3 (0.01mfd) to
No. 2 and leave perp. to the board. eyelet No. 17 and leave perpendicular.
17. Twist the free ends of R16 and R17 to- 15. Bend over the free end of C3 and solder to
gether and solder. eyelet No. 16.
 26 TRANSISTOR SUPERHET RECEIVERS

Drawing B 8. Fit T6, connect the emitter to the BROWN

16. Connect the positive end of C10 (8mfd tag of TT10, collector (spot) to the RED
electrolytic) to eyelet No. 11 and leave tag of TT10, and the base (centre wire) to
perp. the YELLOW tag of TT9.
17. Connect one wire end of R12 (1K) to 9. Fit T7, connect the emitter to the BROWN
eyelet No. 11 and leave perpendicular. tag of TT10, collector (spot) to the BLUE
18. Twist the free ends of C10 and R12 to- tag of TT10 and the base (centre wire) to
gether and solder. the GREEN tag of TT9.
19. Connect one wire end of R10 (10K) to 10. Fit 15, emitter to the junction of R15 and
eyelet No. 11 and leave perpendicular. C11, collector (spot) to the BLUE tag of
20. Bend over the free end of R10 and solder TT9, and the base (centre wire) to eyelet
to eyelet No. 10. No. 3.
21. Connect one wire end of R11 (47K) to 11. Fit T4, collector (spot) to eyelet No. 8.
eyelet No. 10 and leave perpendicular. base (centre wire) to eyelet No. 10, and
22. Bend over the free end of R11 and solder the emitter to the junction of R12 and
to eyelet No. 9. C10.
23. Connect one wire end of R14 (3.3K) to P. Fit the FS3 aerial (this is mounted vertical
eyelet No. 9 and leave perpendicular. to the group board, in the diagram it is
24. Bend over the free end of R14 and solder shown at an angle in order to show the
to eyelet No. 8. connections). Remove the rubber grom-
25. Connect one wire end of R13 (10K) to mets, slide the FS3 coil (MW) to the left
eyelet No. 8, hold perpendicular and solder hand end of the slab and the XL1 coil
the other wire end to contact W on Si. (LW) on to the right hand end of the slab
26. Solder approximately 1" of PVC connec-
with the earth tag of XL1 nearest to the
FS3 coil. Connect the BLUE fly lead of
ing wire to the solder tag on Cl and leave XL1 to the BLUE eyelet of FS3 and the
free. BLACK marker of XL1 to the BLACK
NOTE. R4 is given as 56 ohms in the com- eyelet of FS3. Connect the wire from Cl
ponents list as an average value. The function (fitted in stage 3B) to the RED eyelet of
of this resistor is to regulate the amplitude of FS3. Connect the wire through hole R
the oscillations of the local oscillator and may (fitted in Stage 2) to the GREEN eyelet of
vary with each RF transistor. With some tran- FS3. Connect the BLACK eyelet of FS3
sistors it has to be shorted out completely and to eyelet No. 19. Connect the earth tag
with others the value may be as high as 270 of XL1 to contact W of Si.
ohms. The optimum value will give maximum 13. Press the positive battery stud on the
output without spurious oscillations. positive of the battery, and the negative
stud on the negative of the battery.
Stage 4
The receiver is now ready for switching on and
1. Solder approximately 2" of PVC connect - aligning.
wire to the negative battery plug and con-
nect the other end to the junction of R16 Alignment Instructions
and R17.
Fit the ROLA C25 speaker to the 4 stand- Remove the positive end of D2 from pin 4
off pillars with 4BA x countersunk of 2nd IFT (XT6). With a signal generator set
screws. Ensure that the speaker connecting to 465 kc/s connect the leads to pin of the 1

tags are towards the edge of the group 2nd IFT and the earth line, tune the core of
board as shown in the Stage 4 diagram. XT7 for maximum output. Connect the
3. Connect tag T of the speaker to the solder generator to pin 1 of the 1st IFT and tune
tag at G. the 2nd IFT for maximum output. Connect the
4. Connect the free end (positive) of C12 generator leads to eyelet No. 12 and the earth
(fitted in Stage 2) to tag T of the speaker. line and tune the 1st IFT for maximum output.
(To avoid confusion C12 is not shown Now make the final adjustment of the three
again in Stage 4). WI's for maximum output. Reconnect D2 to
5. Connect the free end of R18 (fitted in pin 4 of the 2nd IFT.
Stage 2) to tag T of the speaker. Switch to MW. Set the generator to 665 kc/s
6. Connect the BROWN tag of TT10 to tag and turn the dial to 450 metres, adjust the core
T of the speaker. of X08 for maximum output.
7. Connect the MAUVE tag of TT10 to tag Set the generator to 1.2 me/s, tune to 250
U of the speaker. metres, adjust TC2 for maximum output. Reset
 TRANSISTOR SUPERHET RECEIVERS 27

the generator to 665 kc/s, tune to 450 metres SIEMENS-EDISWAN SR2/ 2

and readjust the core of X08 for maximum
output. Reset the generator to 1.2 mc/s, tune Although the receiver to be described here
to 250 metres, readjust TC1 for maximum out- and the one that follows it are not actually sup-
put. Repeat until no further adjustment is plied in kit form, they have been designed in
necessary. such a way as to make it simple for the home
Switch to LW. Set the generator to 200 kc/s, constructor to build them. As they are designed
tune until the signal is heard and slide the by the firms who actually make the transistors
XL1 coil along the slab for maximum output. they are naturally excellent circuits and well
worth building. I would like to thank Siemens-
THE REPANCO MAJOR -7 Ediswan Limited, for their permission to pub-
lish the circuit and information given here.
The circuit of the Major -7 resembles fairly
closely that of the Minor -7 shown in Fig. 23. The receiver uses 6 transistors and a germa-
The coupling between T4 and T5 is the more nium diode. Tuning is continuously variable
usual resistance -capacity type and the battery from 530-1620 kc/s with preset tuning of the
voltage is 7.5 instead of 9. The speaker is a light programme on 200 Kc/s. An 8" x i"
7" x 4" elliptical type and the size of the case ferrite rod aerial is used with the two coils 4"
is comparable to the small valve portable type apart and symmetrically placed on either side
of receiver. The tuning is variable and covers of the centre. The frequency changer is an
both the medium and long waves. XA102 operating with a collector current of
At first sight it may seem that as the circuit about 600 micro.A. The mixer is coupled to
of the Major -7 and Minor -7 are so similar there the I.F. amplifier via a bandpass, double tuned
can be little difference in the performance. I.F. transformer. The 1st I.F. stage has a col-
However, the larger case size of the former lector to emitter voltage of 5 and a no signal col-
makes possible a far larger ferrite rod aerial lector current of 0.5 ma. The 2nd I.F. transistor
which results in increased sensitivity. again has a collector -emitter voltage of 5 but
the collector current is 3 ma. The X8103 acts
Lack of space prevents me from including not only as the audio driver but also as a source
step by step instructions for all the kits of amplifier A.G.C. for the first I.F. stage. The
described here but these are available from push-pull output stage uses two XC101's each
the suppliers. with a quiescent collector current of 2 ma. 4db
Repanco have also designed a receiver of negative feedback is applied from the secon-
similar to the Major -7 but using preset tuning. dary of the output transformer to the emitter of
This is called the Transeven and has 3 M.W. the driver. The maximum power delivered to
preset stations and 1 on the LW. the primary of the output transformer is 220
rnilliwatts.
THE REPANCO TRANSISTOR
CAR RADIO A stage by stage gain analysis of the receiver
is shown in Fig. 28. The average sensitivity
The circuit shown in Fig. 24 is that of a 7 with 5mw reference output, is about 90
transistor car radio. As car radios have to muV /M.
operate even in areas of extremely low signal
strength they require greater sensitivity than a
normal portable; this is obtained in this circuit MULLARD PORTABLE SITPERTIET
by the use of an R.F. amplifier before the fre- This circuit and the allied information is pub-
quency changer. As the signal strength will vary lished by permission of Mullards Application
considerably whilst the car is in operation a Laboratory who were responsible for the design.
strong A.G.C. must be applied to prevent large The circuit shown is actually that of a minia-
variations in volume. As the noise level inside turised version of the original design, the overall
a car is so much greater than normal, more dimensions being 61" x 41" x 1k".
output is required from the speaker. To provide
this a Mullard 0C16 power transistor is used The variably tuned circuits give a frequency
in the output stage as a Class A amplifier giving coverage of 550 to 1600 Kc/s in the M.W. band
an output of about 2 watts. This circuit may be and 150-250 Kc/s in the long wave band.
used in cars having either a 12 or a 6 volt power The receiver has an output power of 100 mw.
supply but the component values will differ. however, if an output of, say, 30 mw. is con-
When a twelve volt supply is used an 0071 sidered sufficient the push-pull output stage may
is able to supply sufficient power to drive the be replaced by a single transistor operating as
0C16, but with only 6V this must be replaced a Class A amplifier. A further transistor may
by 0072 which can handle the greater collector be saved by reflexing the second I.F. stage thus
current now required. making a separate driver stage unnecessary.
 0O
IFT.I. IF T.2 IF T.3.
C14.
3 XT6 3 XT6
411
II
r
TCI, TC2, TC3 & TC4
4x 60.pF Trimmer Block.
J
S

330K
it D.

rystal ITS.
C Diode.

T.I. OC.44.
111
C.3.
I
Ili
X0151 3C.60.
0.01.j.tE '01.J1F; III p,7
I
OC.45.
C.7.: II I 4

B Yellow. C.5.
7 Orange. / Red.
3 0 11/9-"
400.pE
)11 I I C>
I V, 4 ci 6 5
Green. il ci
II t
II
c>
Cill',4) -Blue-*
III
FS*2. 3
Back. 'II
rRlack.
2

TC.2.

75 Volts
--1,144%3/4.0
L_
Key to XT6, XT7 &
Key to Transistor Connections
X0I5 Pin Connection
5 I

Fig. 23. 0 Collector

Spot Base
Circuit Diagram of the Repanco Major -7 Emitter
4 3 2 Emitter
Collector Base
 R.3.
270.5.

R. 5.
I K.

7 3
5 2.
0
N

cc T 3. T. 4.
co

tn.
O
O
cc

$
4

110.1
.11

Fig. 24 Repanco Transisto; Car Radio.

iJ
sc
 R.7 C.5. C. 6.

2. K.
1-11 39.K.
56 pF 18.pF. R. 14
-9V
100. .ILF I.K.
ON
R.4. P 50/2 R.9. P50/3
33.K C. 10. R.24. OFF
56.K. 2 2
27K.
13--Th<Z>
3Q1 i
T. 5.
R.I3. OC. 72.
RI
33.K.
56K
f 5 MEI
6

P50/1 R.23.
C> Green()
T. 4. R. 22. 5.n.
T. I. T. 2. T. 3. Tog. 100.11.
D 200. -4.5.V
Green. Blue pF 0A.70. D
C B

D.1 R 21.
35.n..
0 MW OC.44. OC 45 OC. 4 5 OC 71. 2.7K.
1.14. I50.
pF
T. 6.
C>
C>
C>
II

LW MW LW
CD,;:
C.II.
C. 13 OC.72.
2 p.E RI8.
LW c),I; 80 pF
220.
n. 100. F
MVJ Red. Block. R.I2.
4.7. K.!
LJ R.20 R.19
100. fl 5.n
P.17.
ON

C7 C.8 C9
L OF F
C.I. C.2 C.3 C.4.
R. 2 Immo R.I5. 4111,0N.
39.K. mem IO.K.
10.K. 0.1 E1
0 00 8 0 }LE. J -1, 01 ILE 0 }IF
;IF --, E
5. R.6. R. 10. RII. 5.K.
6.9.K. I.K. 47 K I.K.

1 ov
R.I6.
S.
~-]I C.12.
1.K.
2.12. F.

Fig, 25.
Circuit Diagram for Weyrad Transistor Receiver
 TRANSISTOR SUPERHET RECEIVERS 31

The details of the main components used in THE WEYMOUTH 6 TRANSISTOR

this receiver are as follows : RECEIVER
Aerial : Fig. 25 is the circuit of a receiver designed
Mullard Ferroxcube rod, type FX1057. by the Weymouth Radio Manufacturing Co.,
M.W. Transformer. for use with their coils. This circuit is very
Primary : similar to those used by many radio manufac-
88 turns of 19/0.0028 bunched conductors turers being a 6 transistor set with two common
wound in a single layer. emitter I.F. stages and a single ended push-pull
output stage using a split battery.
Secondary :
12 turns of 19 /0.0028 bunched conductors Both capacitative and resistive feedback is
wound at the low end of the primary, nearest used to stabilise the I.F. stages but this intro-
to the centre of rod. duces no problems in construction as the feed-
L.W. Transformer. back components are all fixed. A.G.C. is applied
to the first I.F. stage via R5.
Primary :
240 turns of 3 /0.0024 bunched conductors THE TELETRON TRANSIDYNE
wave -wound in three sections.
One of the most carefully designed kits on
Secondary : the market is the Teletron "Transidyne". It
45 turns of 3 /0.0024 bunched conductors uses a printed circuit and is supplied complete
wound as fourth -pie section, nearest centre with an attractive plastic case the size of which
of rod. is 6r x x 11".
The total length of the four L.W. windings The receiver covers the long and medium
(including three spaces of 3/32" each) is 1". wave bands but in the long wave position the
Tuning Capacitor. set is designed so as to receive only the light
Aerial section : 115pF. swing. programme on 1500 metres, only the oscillator
Oscillator section : 115pF. swine. frequency being variable. TR1 is the usual
Wingrove and Rogers. types C78-22 or C78-02 emitter injection autodyne type of converter.
(with slow-motion drive). Either type to in- TR2 and TR3 form the I.F. amplifier and both
clude an inter -section screen. of them are used in the common emitter mode.
Oscillator Coil. The I.F. output from TR3 is rectified by Dl.
Inductance : 313 uH. The output from D1 consists of two parts, a
Windings : d.c. component and the A.F. signal. The former
Main = 100 turns. is used to apply A.G.C. to TR2 and the latter
Collector = 13 turns. is fed back to TR3 which then acts as an A.F.
Emitter = 2 turns. amplifier. The A.F. output from TR3 is coupled
Qo : to the audio amplifier via the primary of I.F.T.3
105 at 1Mc/s with tuning capacitance of 70pF which prevents any I.F. signal from reaching
Wireless Telephone Company type TR4 but offers only a very low impedance to
CP124924/10. the A.F. signal. Apart from the reflex action
Driver Transformer. of TR3 the audio amplifier is perfectly normal
Turns -ratio : 7 : (1 + 1). and uses a symmetrical push-pull output stage.
Primary inductance : 5H at 1.5mA d.c. The sensitivity and selectivity of the receiver
Primary resistance : Less than 750 ohms. is quite adequate for receiving continental
Secondary resistance : stations on the medium wave band which says
Less than 100 ohms per winding. quite a lot for so small a receiver. The assembly
Fortiphone type L442. instructions given below are those supplied by
Loudspeaker. The Teletron Company in their booklet on this
set.
Speech Coil impedance : 75 ohms. 1. I.F. Transformers and oscillator coil. First
Plessey 3" x 3". to be mounted are the 1.F. transformers and
Battery. oscillator coil, the reference mark in the base
Voltage : 9V. is intended to show the correct orientation of
Ever Ready, Batrymax, Type PP4. each component, and a screwdriver may be
Note. The type numbers given above refer used to guide the pins into position. A pencil
to components used in the prototype receivers. mark on the side of the can assists in this
Their inclusion here should not be taken to operation. The tags on top of the cans must
imply either that the list is exhaustive or that be earthed to the nearest point marked "E"
these specific components are available (fig. 2). 15 -amp fuse wire is ideal for this pur-
generally. pose and may also be used in other positions
 Ow%%'10-- -0
Peference S3 -6 V
,C.I 4
R.7 R9. + R 14.
C 15.

IF T I RA.
O C7 C.:2
3 C.13 R. 17

Coll Base

RI
TR 5
3 C 6.

C>
C>
C>
,

410( Yellow
T 2.
*1li 1!
TR.2. TR. 3. Red
TR.1.
OI
D.I. <D,
-4(=x L5

..L:3.
it IlbLl Green

1
1°1 5 S. 2.
C.4 C.17
-41
C.2a.ii R.5. R.6 RAO.

C.I8

L.2 R.12. R 16
C.5.I IC.2 C.8. - C.19
R.3. R.15. R.I8. R.I9.

- C.9.
R13
C.16

4-

Fig. 26.

The Teletron TR ANSIDYNE 6- Transistor Personal Portable Superhet.

 R. 4
-6 V
t-1 R.18. 0
20.:a 33.11 Vol Con
CI 8.7. ON /OFF
220.11.
8.

J_LF 5.pF -0.5pF 0 04. C. 19. R 13 6.8.K.

1704 C.12 F

14.pF C.16.
3/2.1 + 2 ° 22.pF
1to =Ns T5
1 4
4 4 II
1

C 9.11C. le ,c)
H
II 13
4 3 C.
II
05 ,20
2 LI_
T250..PFT 250
PE

II
4
II

X A. 101. XA. 101. GC 12E

131.1(
- spot.

0.04. R.9.
6 C- 3:
10.K.
M.W.
0'04 Sib
Li± 50/0 R.! _I
p,F MW
0.04.A F. 75K.
C.24.
C.18. 0.5.11F
3 C4 R. 5.
-..-_- --,
0 04 p.F C.2I -4- TC 22
1'8 0P7.7fIlei 3.K. + 5 0/0
R.2 C.2 0.04.AF 8.p,F
22 - C.7. 8.8. R.10.
r R.12.
± 5 °/01 C. 6.
C.7A 510.0 3.K. 3300.
\ /
V R. 7. I R.25
1000. +5% ±5% +5% d I.K. J10.0
p..E
C6 1A.

C.15.
5 60.pF R. 2 3.
+20/o. 2-7 32.p.E
All Resistances Tolerances are 10 0/c. Except Where Indicated. 1 2. K. 51.52

Fig. 27
Circuit of the Ediswan SR2/2.
 -29,1E1-4- 38 dB 4-- 32 dB - 4-40 dEi
GAINS
TOTAL=160. di3
OUTPUT
1

XC 101
1

FIRST
I.F.
FIRST
SECOND
I.F.
SECOND
THIRD
I.F. DIODE AUDIO
-
DRIVER
TRANS-
OUTPUT
TRANS-
1.E I.F.
TRANS- TRANS- DETECTOR DRIVER F F ORMER
TRANS- AMPLIFIER AMPLIFIEI
FORMER FORMER FORMER

XA 101 XA 101 CGI2E XB 103

XA 102
(BLACK SPOT)
XCIO:

OUTPUT

FERRITE
ROD
AERIAL

NEGATIVE
FEEDBACK
1-

4 6 dB 4 dB -20 dB--. 4--- 2 dB-- Pi4-4 dB --Pr.- 2 dB ---4-- -4-

7 dB >1
LOSSEq.
OF 5mW TOTAL=45. dB
INPUT SIGNAL: I.Mc/s 30°/0 MODULATED TO GIVE OUTPUT
NET OVERALL POWER GAIN 115. dB.

Fig. 28.

Gain and Loss Diagram for SR 2/2.

Stage-by-Stage
 TRANSISTOlt StiPtiditT ItECtIVaS 35

insulated with mm. sleeving. Heavy wire

1 6. Transistors. Transistor lead -out wires
should be avoided as it may damage, by strain, should be insulated with 1 mm. sleeving and
small components. Due to the shrinkage of SHOULD NOT BE CUT SHORT, a heat shunt
material, the I.F. transformers and oscillator being used when soldering. Transistors may be
coil mounting holes may require to be reamed pushed into any advantageous position. IRS
out with a 1/16" drill to permit an easy fit. and 6 collector currents should be within .1 ma.
2. Loudspeaker and ferrite rod bracket. The difference for correct matching but within .5 ma.
2k" loudspeaker is next fitted in position is acceptable.
through the chassis, its flange being on the 7. Ferrite Rod Aerial. When mounting the
printed circuit side, with four 6BA counter- ferrite rod aerial the grommets may require to
sunk screws and nuts together with a 6BA be moved along the rod. The medium wave
solder tag and the ferrite rod mounting bracket layer winding is nearest to the gang. Connec-
as shown in fig. 2. tions for the L.W. winding are shown in fig. 2.
3. Tuning condenser. Next is mounted the Yellow to Cl; White to SI; Green to earth
"00" gang, but the spindle must first be cut (6BA solder tag on speaker).
down to 3 /16" long. Only two 4BA x 8. Battery. Two No. 8 batteries are inserted
counter -sunk screws are used here-the throd into the paxolin tube provided, the brass cap
hole nearest to the wave -change switch is used of one against the zinc case of the other. The
for retaining the chassis within the cabinet. brass cap is the POSITIVE end and must be
4. Output Transformers, wavechange switch, in contact with the clip NEAREST TO THE
and volume control. Then follows the volume TUNING CONDENSER. Constructors are
control (R15) secured with an 8BA x warned that reversal of the batteries will destroy
counter -sunk screw and the nut and the wave - transistors.
change switch, secured by two 8BA x 9. Biasing. The nominal value for R6 is lk;
counter -sunk screws and nuts. The output trans- but due to variations in transistor gain, this
formers are positioned as shown in fig. 2, and value may vary between 500 ohms and 2.2K.
secured by inserting the lugs through their Therefore, a variable resistor of approximately
respective holes in the printed circuit panel and 10K should be temporarily fitted in place of R6
bending over. Fig. 2 shows the correct termina- during alignment and adjusted to maintain
tions for the coloured lead -out wires, which stability.
should be wound in the form of a spring around 10. Alignment. Where a signal generator is
a piece of 18 -gauge wire. The ends can then be available, this should be set to 470 K /cs., and
cleaned and stretched to their terminating the output connected via a .1 condenser to
points. the base of TR3, adjusting L6 screw core for
5. Resistors and condensers. Resistors and maximum output. Then connect the TR2 base
condensers should next be soldered into posi- and adjust L5 screw core. Finally connect to
tion, omitting R.6 at this stage. The value of TR1 base and adjust L4 screw core. The
this resistor is discussed under "Alignment and generator output should be decreased as each
Biasing". Care must be taken to observe correct additional tuned circuit is brought into use.
polarity of electrolytic condensers and where Repeat above until no further improvement is
the metal cans of these are liable to be in obtained.
contact with other components they should be A suitable trimming tool may be formed from
insulated with two layers of sellotape. C.6 is a plastic knitting needle. All cores must be
connected between the rear (smaller) section of rotated slowly.
the tuning condenser and the printed panel (fig. The signal generator may next be coupled
2). C.14 is mounted with its negative end to to the M.W. ferrite winding by forming a single
the printed panel, the positive end being in- turn loop of insulated wire around the ferrite
sulated with sleeving and soldered where shown. rod. Set generator to 600 K /cs. Set tuning con-
Wiring links are also fitted at this stage (fig. 2). denser near to maximum capacity. Adjust M.W.
When soldering components to the printed ferrite winding in conjunction with L3 screw
circuit the lead -out wires should be pushed core for maximum output.
through their respective holes, the ends cut off, Switch to L.W. and adjust L.W. ferrite wind-
a little NON -CORROSIVE flux applied and ing only in conjunction with tuning condenser.
soldered neatly, with, preferably, a 25 -watt iron. Repeat alignment procedure until no further
Surplus flux may afterwards be removed with improvement can be obtained.
a little methylated spirit. All components must
be securely soldered to the printed wiring. Large The value of R6 may now be determined
"blobs" of solder formed with a cold or un- from the setting of the 10K variable resistor
tinned iron will NOT suffice. and a suitable fixed resistor fitted.
 Transformer Windin.s.
CircuitPef Coil Pin Nq Noof Turns
5-6 13
T. 2, 1-2 2
4-3 100
2-3 45
T.3. a T.4. 3-4 105
1-5 7.5
2-3 56.K.
29
T.5. 3-4 89
1-5 16
T.I.
11240:45
I

L ,
M '
AliS:
,
5 to75
PE

L.

<Di
88:12 0.5 to
'115. 5. to
PF
05 to 4.5 4.5
PE 50.
pF

0.01
O.K.1
3.9 K. 5.1K. 0..

6 OV
L _
Tolerance of 2.7. K.
Resistors marked with an asterisk 0 should be 5%.
Tolerance of allother Resistors should be 10%.
Fig. 29.
Circuit for Miniaturised Version of Mulicird's Receiver.
 TRANSISTOR SUPERHET RECEIVERS 37
In some cases it may be necessary to fit a C6 300pf
lOpf condenser across the aerial section of the C7 *500pf 5%
gang. C8 25mfd T.C.C. CE67AE
C9 4mfd T.C.C. CE68A
SUMMARY OF POSSIBLE FAULTS C10 .01 Hunts W99 150V
1. Receiver "Dead" : Faulty battery connec- C11 *500pf 5%
tion. Badly soldered joint(s). Faulty or damaged C12 .01 Hunts W99 150V
transistor(s). C13 500pf 5%
2. Distorted Reproduction: Reduce value of C14 25mfd T.C.C. CE67AE
R16. TR5/TR6 incorrectly matched. C15 4mfd T.C.C. CE68A
C16 25mfd T.C.C. CE67AE
3. Low Gain : Reduce value of R5. TR2/ C17 .04 Hunts W99 150V
TR3 faulty. C18 4mfd T.C.C. CE68A
4. Receiver Unstable : Increase value of R5. C19 25mfd T.C.C. CE67AE
Ageing batteries. C14/C17 open circuit. C20 .01 Hunts W99 150V
5. Receiver Unstable at high frequency end
of M.W. band : Increase value of R3. TR 1 Red/Yellow spot
TR2 Red Yellow spot
6. I.F. Section working -no signals : Check TR3 Red/Yellow spot
wave change switch. or
TR4 Green/Yellow spot equivalents
7. L.W. Instability : Fit a .01 condenser from TR5 Green/Yellow spot
the volume control moving arm to earth (fit TR6 Green/Yellow spot
8BA solder tag on top of R15 and connect .01 TX1 GEX34
from here to 6BA tag on speaker). TT1 Ardente D131
TT2 Ardente D132
COMPONENTS LIST Loudspeaker Celestion C25 2k"
S1 /S2 Wavechange Switch
* Supplied with I.F. trans.
R1 47K Ll Teletron FML22
R2 3.3K L2 Teletron FML22
R3 1K L3 Teletron FT04
R4 47K L4 Teletron FT4E
R5 4.7K L5 Teletron FT4E
R6 1K (see text) L6 Teletron FT4D
R7 4.7K Printed circuit panel
R8 4.7K Cabinet
R9 560 ohms Dial
R10 1K 2 -No. 8 batteries
R11 220 ohms Ferrite rod mounting bracket
R12 4.7K
R13 8.2K TABLE OF VOLTAGES & CURRENTS
R14 22K
R15 5K vol. and S3 switch Ve Vb Vc lc (ma)
R16 220 ohms T R1 0.4 0.2 4.4 0.11
R17 3.3K 5% tolerance TR2 0.5 0.4 4.4 0.3
R18 120 ohms 5% tolerance TR3 2.0 1.5
R19 10 ohms 3.0 2.2
All resistors 1/8 watt. 10% tolerance. TR4 0.7 0.5 4.3 3.1
TR5/6 0.04 0.2 5.2 2.0
Cl 100pf 10% each
C2 "J.B.00" gang
C3 .01 Hunts W99 150V Measured on 10v range. Model 7 Avo. Gang
C4 .01 Hunts W99 150V at maximum capacity_ H.T. no signal current.
CS 200pf 5% 12 ma. approx.
38 TRANSISTOR SUPERHET RECEIVERS

CHAPTER THREE

BRITISH RECEIVERS

Almost all the radio manufacturers in Great formers the overall gain of the 1st and 2nd
Britain now produce one or more transistor I.F. stages are 31.2db and 34db respectively.
receivers. The circuits and servicing information The audio amplifier consists of an 0071
in this chapter were supplied by the following driving two 0072's in a symmetrical output
forms : Ace Radio, Berec, Cossor, Ever -Ready, stage.
R.G.D., Pam, Perdio, Pye, and Websters, all
of whom I would like to thank for their kind THE PERDIO RECEIVERS
co-operation. Perdio Limited manufacture a large range of
The majority of receivers so far produced miniature transistor receivers in which they
use six transistors that is, a frequency changer, specialise. They were in fact, the first firm in
two I.F. transistors, a driver and two transistors this country to manufacture anything approach-
in a push-pull output stage. There are also, ing a pocket sized transistor receiver.
however, a few 4, 5 and 7 transistor receivers. The circuit of the PR5 is shown in fig. 31.
.M.E ACE COURIER The original design used only 5 transistors,
one of them being reflexed but this was later
Fig. 30 shows the circuit diagram of this six changed to six transistors without any reflexing.
transistor receiver which is of the hand held The operating voltages of the transistors are
portable type. Provision is made for connecting given below, measurements were made with a
an external aerial and power supply so that the model 8 Avometer using the 10V range.
receiver may be used as a car radio. Choice
of either the internal or external power supply Transistor Emitter Voltage
is made by means of a built-in switch. TR1 0C44 1.1
The specified battery is either an Exide DT1 TR2 0C45 0.45
or an Ever -Ready PP 1. The speaker is a TR3 0C45 1.0
7" x 4" type of 10,000 lines and the power TR4 0071 1.2
output is a 1 watt. The overall size is 10" x TR5 0072 4.5
7" x 31", with a weight of 4f lbs., including TR6 OC72 0
the battery. Base Voltage Collector Voltage
1.1 7.0
THE WEBSTER "POCKET PRINCESS" 0.6 7.0
The "Pocket Princess" measures 51" x 31" x 1.15 7.0
11" and weighs 141 ozs. 1.35 8.1
The frequency changer is a self oscillating 4.68 9.0
mixer. The signal input from the ferrite aerial 0.18 4.5
is taken to the transistor base. Five Transistor Model
The oscillator circuit is initially biased into Transistor Emitter Voltage
Class A operation but as the oscillation in- TR 1 0C44 1.3
creases, rectification of the oscillator voltage TR2 0C45 0.5
at the emitter causes a negative D.C. voltage TR3 0C45 1.0
to be developed across the emitter resistor TR4 0072 4.0
which tends to drive the transistor into Class TR5 OC72 0
B operation thus stabilising the oscillator
amplitude. Base Voltage Collector Voltage
1.2 8.1
For the T.F. amplifier two transistors are used 0.6
in unilateralised common emitter stages. 8.1
1.15 8.2
The gain of each 0C45 is 38.3db. Taking into 4.1 9.0
account the losses incurred in the I.F. trans- 0.17 4.0
 470.n.

47 K. 33 K. 22 K. ,0 0. 33.K. AF

Io p 5 pF
250 cx I. T S17
witLE-1 or
C) XC 101
250. <D, ,C) c)
pF F

Ext. AE 22 K
0 Tp50
G D 12

S. p
0111,1=11

TS 7 TS 7 TS 13
Or or or
XA 101 XA 101 X B 104 C", <D.
(,) 01
C,1 1C)

1,4

8 F.
C,
II Ext. Bot

TS 17 6.V.
1 K 4.7.K. o
XC 101
Int.Bat

3-3K
229
pF

470
001 E
IM14113=

K 5

77, 67.17F

. . . 0 0
1.F 470 K c/s
0 0 5 .L.F

C..*)
Fig. 30.
The ACE Courier Type TR 257/A.
 R.16.

R.4

L IR.14 Headphone
Jac.
S.7.
RI. C.I3.

C 10 ISO II
Emitter Collector ;01.10

TR.4.
TR3
XI

Internal T R. 3.
p.erio
R.
R.13
103.L
C. 16.

C.22. - R X2 MRI
TR.6 102'

R. 11.23. 1R. R.
17 4. 101 7.102.
R.6. R.9.

C. I I
]R.10.
RI2 To R.5.
wain Vol.
NEM R.S. IMO
C 21

C.I01 R.104.
R. R. R.106.
R.3. 23 Volume. Bias.
15.

25

S.6 .1.

The complete circuit of the Perdio PR5 6 -transistor receiver Oct t) and part of the circuit of the 5 -transistor version (fight). In the latter
TR4 is omitted and TR3 is used as a reflexed I.F./A.F. amplifier; the circuits differ between TR3 and the output stages as shown

Fig. 31.
 TRANSISTOR SUPERHET RECEIVERS 41
Components List C101 10uF
Resistors C102 32uF
C103 0.01uF
R1 56K C2 Coils
R2 10K C2 Ll 0.4 Cl
R3 3.9K C2 L2 0.4 B1
R4 68K B1 L3 12.3 Al
R5 8.2K B1 L4 0.1 B1
R6 680 ohms B1 L5 0.4 Al
R7 1.2K' B1 L6 0.4 C2
R8 22K B2 L7 0.1 C2
R9 4.7K B2 L8 2.8 C2
R10 1K B2 L9 4.0 C2
R11 3.9K B2 L10 0.2 C2
R12 5K B2 Ll 1 4.0 B2
R13 5.6K B2 L12 0./ B2
R14 33K B2 L13 3.4 B2
R15 10K B2 L14 0.4 B2
R16 680 ohms B2 L15 30.0
R17 470 ohms B2
R18 2.7K1 Al Other Components
a 375
R19 100 ohms' A2
R20 2.7K' E4
Ti b 43 A2
c 60
R21 100 ohms' E4 MR1 C2HMB13
R22 5 ohms Al

- -
R23 5 ohms B2
X1 0A70 B2
X2 0A70
R24 1K B1 Sl-S6 C2
R25
R101
R102
15 ohms
3.3K
470 ohms
--
B2
The PR4, shown in fig. 32 uses some rather
unusual circuitry. The first transistor, Gl, acts
R103 100 ohms as a self oscillating mixer in the usual wajand
R104 5K is coupled to G2 via a single tuned I.F. trans -
R105 2.2K former. The I.F. amplifier consists of only a
R106 1K single stage, G2, and is reflexed to provide A.F.
gain. Both the D.C. and A.F. components of
Capacitors the output from D1 are fed back to the base
of G2 so that A.G.C. is achieved.
Cl
C2
C3
-
0.04uf
Cl
Cl
C2
The A.F. output from G2 is R -C coupled to
the audio amplifier which consists of G3 directly
coupled to the Class A output transistor G4.
C4 0.04uf C2 The output power is in the region of 30mw
C5 0.01uf C2
C6 188pF2 C2
and despite the use of only a single I.F. stage
sensitivity and selectivity are quite adequate.
C7
C8
C9
--
250pF2 C2
Cl
Cl
A degree of component economy has been
achieved by both the reflex system and the use
C10 250pF
of direct coupling in the audio section.
C2 The voltages on the bases, emitters and col -
C11 10uf Cl lectors of the four transistors are as follows :
C12 0.04uf B1
C13 B1 Emitter Base Collector
C14 0.04uf B2 Gl. 1.0 1.0 6.8 V.
C15 250pF B2 G2. 2.4 (min) 1.7 5.8 V.
C16 0.04uf B2 G3. 0 0.15 1.65 V.
C17 .18uf2 B2 G4. 1.45 1.65 8.1 V.
C18 0.04uf B2 COSSOR RECEIVERS
C19 250pF B2 Cossor Radio and Television Limited, manu-
C20 50uF B2 facture several transistor receivers ranging from
C21 0.04uF B2 the personal sized "Traveller's Friend" to a 6
C22 10uF B2 transistor portable radiogram.
C23 32uF B2 The "Traveller's Friend" is a four transistor
C24 100uF Al superhet with two I.F. stages, the second I.F.
42 TRANSISTOR SUPERHET RECEIVERS
 CT2
A II
It_
R11. I.K. 20%.

10. C.12.
r-- R. 6 50.11,F
33 K
+I
22.Ki -J--, 12 5.VW.
10 I0.% =r
TR 3 T RS

R.I.
; LE71
Ile! 5-6.K
FR.12.
56 K 10
100/0-
LT 4
L

GI G2 G3 G4
Cl.
9. V.

11
C.7
Il
II
11 004.p.F
0-04
11

11

11 C5
R7. 4.7.K R 13 C i5.
100/o.
11

S IA. 0.04. p.F. ON / OFF

188. R. 8. 22.K 10'1.
I.K.
20°/o Switch
PE
nn
C_._6. 10%.
Vol /Con
250
R2 C 8
pF
10.K 5./0 10
10% Imo +3.V. W. 100
_iR 3. R.S.
R.I4
3:9K 3.V W oo
10K. Vol/ Con
100/0 look
C13 10%

001 }iF 20°/a

CVI
Fig. 32.
The Perdio PR.4.
 R. 9.

3.3.K.
II R.I3. R. 16.
R.4. R.6. R.10. I. K.
C.23.
-r 12.K.
= 82. K 82.K.
250.pE T I. T2 T3
-+ 5./0
T.4.
2 -N,t)' 2
Ir-
I 8.p.E 6.V ,C)
R. I Y .24.
56,K,
<>/' 250.
3 C
E
4
5' 1 SI
- 3, °
C.S. C:25. C.17.
7.5.pE 25O.pF. 0.04.µF
F

Li.
18 K.
C.I 9. C. 12.
1111=11111

.01. E 28. pF
±5%

TR.2. TR. 3. RI4. TR. 4.

35.K.

LS
W2
L 2. -I-
ffffff

Ganged
C.6 to VR.I.
0.01 p. F. 001.
C.13.11r2L8F

C C. 14. VR.I. 11Z17 C. la

R.8. R.I2. R.15. vk
nom 5.K. 2.2.K ads
r==1 470 R. 150..0.
50. p..F ON/0 FFSW ±5%
F 3.V.
6. V. R. 70µF. 4
+4 C.16. --
3.V. RTF18.
12. K.
6.V. 1504-5010
1 1.a.
C I 5. 4.1..
5-115.pE 0014.1,F air

Fig. 33. Jack Socket.

Circuit of the Cossor 'Traveller's Friend'
 TRANSISTOR SUPERHET RECEIVERS 45

stage being reflexed to act as the audio driver. R.F. Alignment

A single transistor Class A output stage is used 1. Carefully screw in aerial trimmer (C19)
to drive the 21" loudspeaker, the output power on gang until it is just tight. (Note that
being 30 mw. The size of the case is 6" x 3-1" x tightening this trimmer too much will
14" and the weight is 17 ozs. A.G.C. is applied cause damage to the component).
to TR2 from the D.C. component from the Rotate tuning control to gang maximum.
demodulator diode. W1 is backed off by the 3. Set signal generator to 545 Kc/s and place
battery supply until a strong enough signal is output lead near aerial rod (alternatively
applied to force into the conductive state where output may be connected to junction of
it reduces the gain of the receiver by shunting aerial tap and Cl via a 2pf capacitor).
T1 and reducing its effective Q. 4. Adjust core of L5 (oscillator coil) for
An earpiece socket is included as an integral maximum response.
part of the receiver. When the earpiece is 5. Rotate tuning control to gang minimum.
plugged in it shunts R17 and cuts off the output NOTE : This is electrical minimum and is
stage thereby considerably reducing the power 5° away from the mechanical minimum.
consumption. The alignment instructions are 6. Reset signal generator to 1580 Kc/s.
given below. 7. Adjust oscillator trimmer (C22) on gang
for maximum response.
8. Repeat 2 to 7 as necessary (always finish-
ing with 7.
9. Set signal generator to 575 Kc/s.
10. Tune set to this frequency and adjust
position of aerial coil trimmer on ferro-
dyne rod for maximum response.
11. Set signal generator to 1450 Kc/s.
12. Tune set to this frequency and adjust the
aerial trimmer (C19) on gang for maxi-
13. Repeat 5, 6 and 7.

COSSOR MODEL 581

Apparatus required
Output meter with impedance of 10 ohms
OR A.C. voltmeter across L.S. (reading of out-
put meter should not be allowed to exceed
10mW, or of voltmeter 275mV). Signal genera-
tor with 400 c/s modulated output and low
output impedance.
I.F. Alignment
1. Set gang to maximum.
2. Set Volume Control to maximum.
3. Connect signal generator, tuned to 470
Kc/s and modulated, via an 0.1 mfd. COSSOR
capacitor between TR1 base and earth. RADIOGRAM MODEL 545
4. Adjust core of T3 for maximum response.
5. Adjust core of T2 for maximum response. 14. Repeat 9 to 12 until no further improve-
6. Adjust core of T1 for maximum response. ment is made (if possible final adjustments
7. Repeat 4, 5 and 6. should be made with an output meter and
8. Seal cores with wax. signal adjusted to give a reading of 5mW).
46 TRANSISI C!, SUPEFIIET RECEIVERS

15. Seal gang trimmers, oscillator coil core operate in a nonlinear portion of its curve so
and aerial coil trimmer with wax. that detection of the 1.F. signal takes place in
its base emitter circuit. The amplified audio
Voltage and Current Tables signal is fed to V6 and this is used to drive
The figures given below are typical readings the output stage. V7 and V8 form a common
which will be obtained using a model 8 Avo- collector Class B push-pull amplifier. Although
meter. this type of output stage gives considerably
Battery Voltage 8.9V (10V range) lower gain than the common emitter type the
Total Current 10.5mA (100mA range) quality is superior, furthermore, the low output
lc 0.35mA (1mA range) impedance makes it simple to direct couple
TR1 Ve 1.35V (2.5V range) into a centre tapped speaker.
Vb 1.075 V (2.5V range)
lc 0.35mA (1mA range) PYE
TR2 Ve 0.2V (2.5V range) Fig. 36 shows the Pye Model 15OBQ. This
Vb 0.3V (2.5V range) is only one of a fairly large range of transistor
lc 2.8mA (10mA range) receivers made by Pye, but lack of space pre-
TR3 Ve 0.45V (2.5V range) vents me from showing more.
Vb 0.575V (2.5V range) The 150BQ is a five transistor superhet of
lc 6.55mA (10mA range) conventional design built into a very attractive
TR4 Ve 1.1V (2.5V range) leather case which is almost small enough to
Vb 1.2V (2.5V range) fit in a pocket.
Junction of R6 C9 5.5V (10V range) The voltages and currents at which the tran-
All the above measurements are with no sistors operate with no signal input are as
follows :
signal. Slight deviation from these figures can
be ignored since they will be due to normal Code Function EC 1C Eb Ee
tolerances. V1 Freq. changer 3.15 0.6ma 0.65 0.6
Approximate D.C. Resistance V2 1st I.F. Amp. 5.2 1.3ma 0.8 0.63
V3 2nd I.F. Amp. 5.2 0.8lma 0.58 0.38
Values of Inductors and Transformers V4 A.F. Amp. 5.6 1.0ma 1.2 1.05
Circuit No. Ohms V5 Output 5.6 15.0ma 1.3 1.1
Ll, L2 (in series) 1.5
L3 VL Components List
L4 VL Cl 115pF
L5 3 C2 0.03uF
Tl, T2 Primary (overall) 4 C3* 2.15pF
Primary (2-3) 1 C4 6800pF
Secondary VL C5 0.03uF
T3 Primary (overall) 3 C6 140pF
Primary (2-3) 0.75 C7 115pF
Secondary VL C8* 2.15pF
T4 Primary 22 C9 176pF
Secondary 1.25 ClOt 250pF
Loudspeaker 9 C11 0.008uF
VL = Very low ( 0.5 ohms) C12 Selected between 100 and 160pF
C13 0.03uF
PAM RECEIVERS Cl4t 250pF
Pam manufacture a wide range of transistor C15 8uF
receivers most of which employ more or less C16 0.03uF
standard circuitry. Their Model 710, however, C17 0.03uF
which is shown in fig. 34 has several unusual Cl8t 250pF
features which make it very interesting. C19 0.03uF
Instead of the usual antodyne converter a C20 Selected between 39 and 62pF
separate oscillator and mixer are used. VI is C21 16uF
the oscillator the output from which is coupled C22 0.03uF
to the mixer, V2, by means of L3. The oscillator C23 3uF
signal is fed to the emitter whilst the signal to C24 luF
be received is fed to the base. Two stages of C25 0.01uF
common emitter I.F. amplification are used. C26 8uF
These operate at unusual current levels, the C27 0.01uF
emitter currents of V3 and V4 being 0.22ma. * Part of Gang capacitor.
and 0.5ma. respectively. V6 is biased so as to t Integral part of I.F. transformer.
 ImiNii$0141 N - #

A..`4
*
141111111111 NJ I
i
Ifigt
ITN
JUNIN
fl MIMS
-"/.- 1101:01 :1;
ilitk lb Mghs;
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NMEN4111 4g#011#10 11,444,g4141
-4411444,4444
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froffixt
4184414,44404141, 41484444 244
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la 4444444414
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 00

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C. 16.

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.CD
C> C>d
V. 7. -6.v.
8 C.>
C>
b

-0 iv
C.21. C. 25.
-025.V
C
C.I9.
LS.
-I45.V. -6V -54 0
V
C. 134.
b

-I.35 -13.V -05

a V3 V4. V
V.

R 19 -025.
V.
L -6V
C.35.

dS. 1'N
V. 13.

-6- R.4.
C 12. C 4 C 8.
R. 9.

C 10 C.126. C. 33.
RI Min
C. C.22. -4-

773. C.S. R 20.

4 4

L _ _ _ _ -1
c1 S.2_

IR 2
b

Collector.
-{-VE I
Bose Fig. 34. -1SV. -6.V.
Emitter.

Key to Transistors. Circuit of the Pam Modzl 710 Receiver.

 TRANSISTOR SUPERHET RECEIVERS 49

PYE MODEL P160BQ

PYE TABLE RADIO MODEL P.128B

 50 TRANSISTOR SUPERHET RECEIVERS

Resistors L.W. coil LI, and M.W. coil L2, are

R1
mounted at opposite ends of a Ferrite rod to
33K R14 6.8K form the internal aerial. Tuning on M.W. is pro-
R2 10K R15 220 ohms vided by C21, and on L.W. by the fixed con-
R3 3.3K R16 1K denser, Cl.
R4 330 ohms R17 3.3K
R5 1K R18 1K Signals are applied from the low impedance
R6 470 ohms R19 680 ohms secondary windings on the Ferrite aerial to the
R7 10K Transistor TR1 which works as a mixer oscil-
R8 10K lator. The emitter of TR1 is connected to a
R9 1.5K low impedance winding on the oscillator trans-
R10 82K former L3 which is tuned by C23 on M.W., and
R11 470 ohms pre-set by C4 and C25 for L.W.
R12 5K volume control
R13 22K TR2 operates as an earthed emitter I.F. am-
plifier working into the second I.F. transformer
L6, L7 which has a tuned primary and a low
impedance secondary. Signals are passed from
this winding to TR3 which operates as the
second I.F. amplifier, the signal being tuned by
L8, and coupled by L9 to the crystal diode
detector CD1.
Neutralising is by C9, R9, for TR2, and by
C13, R13 for TR3.

PYE
MODEL P.123BQ

THE EVER READY SKYLEADEIt

The Skyleader, fig. 36, is a six transistor full
sized portable. The frequency coverage is 540
to 1605 kc/s on the medium wave band and
160 to 270 kc /s on the long wave band. The
sensitivity is 150uv/m for an output of 50mW,
the voltage on the transistors are as follows :
Vc Vb Ve
VT1 0C44 7.2 1.08 0.95
VT2 0C45 7.2 0.77 0.60
VT3 0C45
The driver stage, TR4, has a primary winding
7.16 1.19 1.025 of a step-down transformer connected to its
VT4 0071 7.87 1.40 1.23 collector, while the secondary windings are
VT5 & 6 0072's 0.17 0.03 connected to TR5 and TR6 which operate as a
Measurements were made with a valve volt common committer Class B output stage.
meter. Resistors R22 and R27 are the base biasing
resistors for this stage and are shunted by
THE R.G.D. B56 Thermistors R20 and R23, which tend to reduce
the temperature sensitivity of this stage. No
The unusually high potential of 12 volts, 2 output transformer is used as the high impe-
Ever Ready PP1 in series, is used to power this dance speech coil is connected directly between
six transistor receiver. the supply and the circuit.
 R3 C. C 21 Fs .
C i9.
R.8 R.10.
I11-- R.I7

T 3. R.13. T 4. 5.
a
LS
C 5.

C>
R.I. C>

C. 20.
S.I.
a ) II ))
II
C 12
L.4.
DI
S.2
C.27
R.4.

V.I. V2. -5.2V. V.3.

L2 -3.15
V.

-0 8. R.12
-13.
V. -0 63.V V. 1 V.
-065. -06 -058 -38 -I -05.V. -I
V V V V
C. 22 C.26. 6.V.

All
P16. R. 9. R. la R. 19.
C 24
C.13. C. 16 C 17
go= mem

C.I5 P. 7
Collector

Emitter.
Fig. 35. Kcy to Transistors.
The Pye Model 150 BQ
 C.I5. R. C.I8. R.11
MM
-
1
3.9.K.
F2K -1;41-
56.pE 18. pF
+2./o R.I6.
1:1/ 2.pF Lo -9.V.
C.13. C.17. I
R.7.
250.pF 22.K., 2 50.pE C 23. 680..Q.. R. 18. C. 24,
C.S.
2- R. 4. 2%
r 2 -,- +2%
68. K. 11
S.6.
La >1;9.1 100.i.LF 5.10 -1-
CAR. AE. ±2% 1001 t-
,..10 .1-LF

0 iIp
1 imp.
"II R.I. I R.14.
C> _i
L
ll 56.K. 33.K.
L.14. ann 3 OA 70
d 11 r =611 4-r M
L.
II C. 26
1 /a VT.4 T I. VT 5.
MW MUmm T 2.
Red. C. 21. OC. 71. OC.72 NM=
004
Gree
46 --004 p.F:
L. 1 GN S 3.
C)1 b L0
VT. I.
L.2. VT.2 VT3.
OC.44 OC.45 OC, 45.
Black'
II
3
L M L M
31 *1.2 K. 10. K.
S I. S.2 11 LW
L3 II L.4 VT 6.
1
C. C. 7 C C. 22. OC.72.
11 C. 12. C. 16 C. 20. C 25.
II 10
C. 3.
71' 0.1 AF 0I 11.F 004 100. 0002.
60. pF 20 pF. 60. pF. +R. 17 R 19.
20 pF Blue F }L. F.' 34E R^20.
C. II.
C. 2 Grey. R.3. C16 C 14 C. 19.
C. 8. R. 21.
_L 3.9 K. 8A C. 10. 100.0. 10.0.
47K
C. 4. 5% 01 .p.F 01 }LE' 001 5%
R.2.
[1 JR
8}4.F R 5.
10.K. 470. n.
0.1 680.0 I.K.
1OJ II.
0
1200 p F.(1 \ R.12
+10% 5.K. I
157.2 pF 110.6.13F
R.9. 8.2.K. + 20 % R.22. 470.0.
Note:- All Resistors ± 10% tolerance
unless otherwise stated.

Red spot I
F Switch.
2. 1

Earth
Connections as viewed
5
from underside.
340 0 Switch.
4
t ---Red spot.
All Transistor connectios as above. Osc. IF T Trimmer Block.

Fig. 36.

The Ever -Read Sky Leader.

 R 6. R.17
12 V
1 1

19.
3.9.K.
L I.K.
71
C.77 C13. 52ILLE
2. p.E R.9. R.I3.
R.I5.
56.K. II -1
1.2.K. K
3.9 K. I2.K.
16.pE

C 14.
311,4
<> .........
2:50.1pF 6,V
2, 57E

R 10 CD. I.
Nir
OA 70.
TR.I. TR. 2. TR 3 TR. 4. V/1
OC 4 5 27 K. OC.45.
Co.. 2, 1,6 -F. s

I----.
+1'1 i,
4012. 0-
Speech Coil. SW2
8.126. Ganged
°-] to VP 1
1R.7 C 12. 0.118. R.I6.
4 7K. 10. K.
8. p.E C>
0 1 p.E
C>
T R.6. 39. K.
R. 14. OC 72.
I. K. R 25
100.
R 27.-
1500 ;-.[ R.28.

R. 12.
R.I8
R. 5. R. R. I-
47.0 6.V
K. 470 4.7 K. I. K.
10.- R.23. VA 1039.
C. 4 C 5, b C. 8. C IS. C 17
C. 22:
00 0 01. .RE 465. 10 pF. 8. ;LE 0.1. }LE /004. )1
PE VR.I. 2
C20.
C. 21 R. I9.
C. II. S.K. 15. K.
1010.
0 AHF
1.0
C 25. C. 24.
T 1

J
C.

704.AF

Fig. 37

Circuit Diagram of the R.G.D. B56 Receiver.

 54 TRANSISTOR SUPERHET RECEIVERS

The conditions necessary for efficient and great enough to produce rectified current
undistorted operation are that R21, R22, R20, and a positive A.G.C. voltage).
and TR5 shall be perfectly matched to R25,
R23, R27 and TR6. 4. Switch receiver to M.W. and turn gang to
minimum capacity, shorting the oscillator
Under these conditions and with no signal section.
input the junction of R26 R24 will be at the
same potential as the centre of the battery, and 5. Feed in a 475 Kc/s signal and adjust the
no current will flow in the speech coil. On cores of L8, L6, L4 for maximum deflec-
applying the signal from the driver stage, TR5 tion.
and TR6 will alternately be driven to pass a
high current. This current will vary at an 6. Remove the short from the oscillator
audible rate and will flow directly through the section.
speech coil of the loudspeaker.
7. Tune the receiver to 500 metres. Set the
Alignment generator to 600 kc/s and adjust the core
1. Remove the chassis from the cabinet, leav- of L3 for maximum deflection.
ing the battery and aerial leads connected.
8. Tune receiver to 200 metres. Set the
2. Connect the output of a signal generator generator to 1500 Kc/s and adjust C24 for
to a loop of wire, which should be placed correct calibration. Repeat with step (7)
a few inches from the end of the Ferrite until calibration is correct. Then adjust
rod aerial. the trimmer C22 for maximum deflection
at 1500 Kc/s.
3. Connect a high resistance voltmeter across
the volume control, the negative lead going 9. Switch the receiver to L.W. and feed in
to the chassis. (A slight negative reading a 200 Kc/s signal and adjust C25 for
will be obtained until the input voltage is maximum deflection.

loon.
510 °1_117.p F.6 I ,50-15.V.
-4- 4-7X T 4.
T.3. 2 D. 2.
4
I. 1.2.K. I.K.
VI.P
0C,
2-5X
5 <>
3
IsLIE 2nd. IF

005.
yF I0 -15V
0.02.31F Output.
0 -2 0.pF
2,-

Osc. 0-04.E r-1[! 9V.

Coil. 10-15V
c
12-230_ O
PF
0.02 ry
50.
O
.1 4 10.1tF i0.p,F I5.V.
OFP
15V 015.V. ON
1
-4-

820.0.
0-0LAF 004F
18K 1-2X. 3.9.K. 680.1.
w
ui 15.K 18057.

FIG. 38.
FOUR TRANSISTOR RADIO REFLEX CIRCUIT DESIGNED BY INDUST RO TRANSISTOR CORPORATION.
 TRANSISTOR SUPERHET RECEIVERS 55

CHAPTER FOUR

AMERICAN RECEIVERS

All the varieties of circuits described in the output stage is of the order of 60 db. which is
previous chapter may also be found in Ameri- usually more than adequate. As N.P.N. R.F.
can receivers in a slightly different form. In transistors are readily available in the U.S.A.
addition, however, there are a large number it is possible to save several components by
of rather more unorthodox receivers which directly coupling the I.F./ A.F. stage to the
either take advantage of the peculiar properties output stage.
of some of the more recent types of transistors, As this eliminates the losses made in the
for example, the low power and voltage require- R.C. coupling components it also results in a
ments of the surface barrier type, or endeavour slight increase of gain.
to obtain the required results with fewer
components. The circuits shown in figs. 38, 39 and 40, are
designed around transistors made by the
One rather interesting trend in America which Industro Transistor Corporation. The tran-
has not, so far, been followed in Great Britain sistors for use in these circuits are as follows :
or on the Continent is the production and popu-
larity of earpiece only receivers. These sets are High Gain Med. Gain
similar in design to the more conventional re- Converter -Oscillator 2N486 2N485
ceivers equipped with both loudspeaker and 1st I.F. Amplifier 2N483 2N482
earpiece socket but they omit the output stage. 2nd I.F. Amplifier 2N483 2N482
The maximum output power is usually in the Audio driver 2N362 2N363
order of lmw which is quite sufficient to be Push -Pull output 2N359 /360 2N361
painful when driving an earpiece. The little sets Single -Ended Output 2N362 2N363
have several advantages which may be enume- Separate Oscillator 2N481
rated as follows :
Diode 1N60, 1N64, 1N69, 1N295
1. Lower initial cost (no speaker or output
stage).
As may be seen, two types are listed for each
2. Smaller size and weight. transistor function. One for high gain and one
3. Greater battery life for a given size for medium gain. For example, the 2N483 has
of a gain of 35db. at 455 Kc/s compared with
battery. 31db. for the 2N482. The conversion gains of
CIRCUITS DESIGNED BY TRANSISTOR
the 2N486 and the 2N285 are 30 and 26db.
respectively.
MANUFACTURERS
The decision as to whether a high gain or a
As one might expect the American transistor medium gain set of transistors is to be used will
manufacturers have contributed a great deal to depend upon the type of receiver required. A
the design and development of transistor super- large receiver using six transistors with highly
hets. A large number of the designs employ a efficient coils and transformers will not require
refiexed I.F./A.F. amplifier. Those readers who anything better than the medium gain transis-
are familiar with the reflex thermionic valve tors. A very small pocket set, however, using
receivers that used to sell in America may have only a single I.F. stage and relatively inefficient
their doubts as to the advisibility of this when aerial coil and transformers could use to advan-
they remember the resulting distortion and high tage the added sensitivity of the high gain
playthrough that these receivers possessed. transistors.
These faults, however do not occur in a cor- The first two sets use the familiar emitter
rectly designed transistor reflex circuit as there injected antodyne converter, the third uses a
is no filament feedback problem. The overall separate oscillator and mixer. All three employ
gain obtainable in these receivers when the two I.F. stages with neutralisation by means of
I.F./A.F. stage is R.C. coupled to a Class A both condensers and resistors.
56 TRANSISTOR SUPERHET RECEIVERS

It is rather interesting to note that the circuit AMERICAN MANUFACTURERS

of fig. 38 has a performance at least as good RECEIVERS
as that of the familiar four valve portable which
uses a pentagrid frequency changer and a single Fig. 42 shows the circuit diagram of the
I.F. stage. Regency Model TR-1 which was probably the
first transistor receiver to be put on the market
A combination of N.P.N. and P.N.P. tran- anywhere in the world. It was first put on the
sistors are used in the receiver shown in fig. 41, market around Christmas, 1954, and, surpris-
which uses transistors made by the General ingly enough, differs very little from present day
Transistor Corporation. As transformer coup- designs. The battery voltage, 22k, is somewhat
ling is used between the third and fourth stages, higher than usual and the primary of the I.F.
sufficient gain is obtained without reflexing the transformers are not tapped but these are the
I.F. amplifier. only major differences between this set and
As only a single I.F. stage is used, sensitivity comparable receivers of today.
is rather low, this means that the receiver must The transistors used were N.P.N. types made
be used with a reasonable size of aerial coil if by Texas Instruments of Dallas. The frequency
it is to operate in areas of low signal strength. changer used was a T1223. The I.F. stages used
Although so simple, this receiver is quite were T1222's, and the audio output stage used
adequate in areas of reasonable signal strength. was a T1210. The overall size of the receiver
It may, however, be further simplified without was 3" x 5" x 14". To obtain maximum gain
noticeable loss of performance by reflexing the from the I.F. stages, an I.F. of 262 Kc/s was
I.F. stage to perform the duties of the driver used instead of the far more usual 455 Kc/s.
thus saving the cost of one transistor and its The gain of a transistor declines rapidly beyond
associated components. In areas of strong signal a certain point making the use of a low I.F.
strength the transformer coupling may be re- rather attractive, furthermore stabilisation is
placed by direct coupling between the N.P.N. simpler at this frequency.
I.F./A.F. stage and the output stage. This will The Class A output stage provides an output
mean a loss of about 12db in gain but will im- of about 12mw. at the primary of the trans-
prove the quality of reproduction. former resulting in about 6mw. being fed to

Osc. Cony. st. IF 2nd. IF

I

100 CI.
15.

120.K I.2. K. 68.K.

510.12.75P OUTPUT
PUSH PULL
D.I.
68.Ku T 3.

4
of' 2-5.K.

T. 5.

002. 0.03
F 2c1 D. 2.

KJ
IC>
10-1C.5
/I 4
5
pF
C 04 )4F
0 04.
p.F
66.0 S.
0.024.1.F - 10.p,F 50.jsE
'5V' 1-2 K. isy
820 fl 9V
O. 0
IC.K.
+ 04
TT ON
Nisi
=ET=

OFF

FIG. 39.

FIVE TRANSISTOR RADIO REFLEX CIRCUIT DESIGNED BY INDUSTRO TRANSISTOR CORPORATION.

 TRANSISTOR SUPERHET RECEIVERS 57

the speaker. This may appear to be rather low curve thus providing a very efficient mixing
but with an efficient loudspeaker it is sufficient action.
for personal listening which is all the receiver
is designed for. Many modern pocket receivers The two I.F. stages are perfectly normal and
are designed to give a peak output in the region require neutralising capacitors of 30pfs. The
of 100mw. which has several disadvantages. output from the second I.F. amplifier is trans-
Surprisingly enough increasing the available former coupled to V5 which is a class detector
output power from 12 to 100mw. means using and which also provides an amplified A.G.C.
two extra transistors. When 100mw. is required voltage for V3 and V4. Thus gain control is
a push-pull output stage must be used to keep applied to both the first and the second I.F.
the current consumption within reasonable stages rather than only to the first which is more
limits. But a Class B push-pull stage has about usual. To ensure that adequate control is main-
7db less gain than a Class A stage using the tained even under the most extreme conditions,
same type of transistor. Furthermore the V3 operates from only half the total battery
difference between 12mw. and 100mw. is more voltage, that is 3 volts.
or less 10db. Thus an extra 17db gain must be The output from the detector is developed
added to the receiver somehow. The only way across a 25K ohm potentiometer which acts as
in which this can be done is by using another the volume control. The audio amplifier consists
stage of R.C. coupled audio amplification. of two stages, a driver, V6, and the push-pull
Fig. 43 illustrates the Raytheon FM -101A output stage. This latter stage uses two CK722's
which was one of the first transistor receivers in push-pull providing a maximum output
to use the now more or less standard I.F. of power of about 100mw.
455 Kc/s. A five transistor superhet having several un-
The frequency changer uses a separate usual features is the Motorola 56T1 shown in
oscillator and mixer. VI being the local oscil- fig. 44. 4 N.P.N. transistors are used in the R.F.
lator and V2 being the mixer. V2 has no bias and detector stages with a P.N.P. transistor as
on either the emitter or the base so that it the audio output stage. VI is a conventional
operates in the most nonlinear portion of its converter which is

T2

PUSH PULL
OUTPUT
.002
ANT AF

220tfl.

16- av

_ 002. ;IF
I6. -3_V.

33.K. 33K.
K>
2201h. 5.
002
I .K. J;Fe
T 3-9.K. 33.K.
50- OFF
10V -1M
ON

W.
0-02.p.E
FIG. 40.

SEVEN TRANSISTOR RADIO CIRCUIT DESIGNED BY INDUSTRO TRANSISTOR CORPORATION.

 00
GT- 792R GT -948R GT-8i GT - 109

IF 456.KC. IF 456. KC.

r
IN 295. Earpiect
Jack.

IMP
44_,
:c
Vol. Cont.
S
10.K.
4"PM
3
<D Speaker.
ap,F
4

0.05
U. 005
ui -40 47.
10.K 0
O
50.J.LE
0.01
5.6.K.

Ti /
27K. 470 470.0 O.K.1 I.K. 68.0.
L-74- R.14.
50 p.F
T
Switch on
120. volume Control
K. 25.p.F
f-
12. K.

Fig. 41.

A 4 Transistor Superhet using General Transistor Transistors.

Corporation's
 TRANSISTOR SUPERHET RECEIVERS 59

coupled to the first I.F. stage by means of T1, I.F.T. to the base of the transistor. The second
the first I.F. transformer. This transformer is detector is a crystal diode which supplies the
unusual in that the primary is not tapped to A.G.C. voltage for the I.F. amplifier. The audio
reduce the load on the first transistor. V2 and output of the diode is developed across the
V3 form the I.F. amplifier, both transistors volume control which is connected via a 6muf.
operating as common emitter amplifiers without electrolytic capacitor to the third transistor.
neutralisation. The I.F. signal is demodulated The audio amplifier consists of a driver trans-
by V4 which acts as a Class B detector and former coupled to a Class A output stage. The
provides about 10db. of audio gain. The re- output transistor is physically connected to a
quired A.G.C. voltage is taken from a resistance heat sink to enable a high output power to be
in the emitter of V4 and applied to both the obtained without the possibility of thermal run-
first and second I.F. stages. The audio output of away occurring.
V4 is developed across R5 which acts as the
volume control. The collector of V4 is directly A small jack is provided which automatically
coupled to the base of V5, this is possible cuts off the loudspeaker when an earpiece is
because V5 is a P.N.P. transistor and requires connected. In this receiver the earpiece is con-
a negative base bias. The volume of the receiver nected to the secondary of the output trans-
is varied by altering the voltage on the base of former. This is rather wasteful of power since
V5 thereby altering the gain. This system has only 100 mierowatts are required to power the
the added advantage that it alters the current earpiece. The alternative is to take the signal
consumption of V5 in step with the volume re- for the earpiece from the driver and to switch
quired and so lengthens the life of the battery. off the output stage by means of the switch on
the jack plug. If the output stage is of the
Fig. 45 shows the circuit diagram of a simple Class A type a low resistance earpiece may be
four transistor and one diode receiver the used in parallel with the base to earth resistor.
Bulova model 270. The converter is the usual This will then reduce the collector current to
type and is coupled to the single stage I.F. a negligible level but the earpiece will obtain its
amplifier which is neutralised by the lOpf. signal as it will be seen by the driver as part of
capacitor taken from the primary of the second the output load. In the case of those receivers

100 -200 pF 100- 200.13E

Ea rphone
Jack

0001.
;IF \

T4.

39. K.
V 40- 3.V.
40 -ay.

100.K 2.2.K. 2.2.K. 33.K.

T T
14-5-25V
I I-
Fig.42. 22-2 V
1

'

The Regency "Model TR-1"

 O
C1130pF

NC
1K RI. R.3.
I.K. 1.11.'30 pF I K. 10.K. Class B Pwr. Output.
39 K I.K.
2N112. 01.AF 2N112 0I 2N112. 0lpF 2N 112
or L4J I8.K
1st. Ampl Det
2NI13. 2nd.IF Ampli 14
ANT CK 721. or CK 722.
\ 125 125
}II 125
II Yel
\ p F' PFs 2200
it
I AF Ampl 32. D..
V.2. V3 V.4 V5 V6 Blk.
.05 ILF Spkr,
3011,E
2 2
25K.
Vol.

Grn
`-.1112±1_..L.F
---0 25.p.E
22. K Blk
01 p.E 005
IS -- p.F 0F.: R.2
100.K. I.KJ K Brn
Mae 1K
Tuning 01. 150.K.F 30 8200 VB
6V_T_
600-1250. T
pF 1+
10 ;IF Orange- BILL
10 pE TI
5.K

3V 3.V
39 K.
2.5 mH B-

6.V.

2511E
4130.p.F

Fig. 43.

The Raytheon FM -10IA.

IMILS1

2N172. 2N146 or 2NI47 2N146 or 2N145 R35 354

Cony. 1st. IF Ampl. 2nd. IF Ampl. DET. AVC. AF. Pwr Ampl.
V.I. V.2. V.3. V 4.
81. V. 13.7V VS.
T.I. T.2. 8.7V 8.V. 0-23.V.
C L.2. T.3. T.4.
3 ir32.fl. 311-374f1. 3 i3.4.fl.
II
35.fl.
I
\ aII Grn. Phone Jock.
,1.4.v. 11-45.V. 2.65.V. C>
C>
1-2V. 390.lpF 1.2.V 390. 13-1.V
hl R.S. I.K. 0-2.
390 2 ., 4 PE I2, g 0
1

pF 2
5
330.11.
N1-1
4-- / C.25.H Blk
I Min. (Vol
\
um. Wht
001p..F 0-01..p.F 0- O E 1120 fl
VC -Z=14.(1.
001y.F III" 12.p.F
50.1t.F
.714,
IF 455.KCi

1 S. K.
R.I. I.K. R.2. 1K 4.11
r
7.6.11
I 2 fl
R 3.

4.7. K. 4,7. K. t. K.
'Dot.
1" L 2. Connections
r (Top View)
100.K 470 ;22.K 2-2.K.
1 22.K 39.K.
"0 R4
r- 33.K.
j L. Jn

9V

ON-OFFSW1
I

Fig. 44.

Circuit Diagram of Motorola 5611.

 2N 112. 2N112. 2N 132. 2 N 138. Phone Jack.
Mixcr Osc. IF Ampl. Audio Arnpl. Audio Output.
Heat

7. V. 1-7. V. 61 V. 7I.V.
001.p..F 32.V./ Blu.
2I 0.1
Rod(Ant.ii C>f C>
B C>
6
8 1 6 0.9.V
0 05.V.
350 350 pF C> "-C) -
33.K. 3.6.V 4 1-5.V
15%. OJ 0.01.
Orn.
L Red.
6.p.F 3.V.

18 10. pF.
<1>

I8.K.
I. K.
82.11.
5.1K. 5% 0 05p.F.

0.05.AF 560.11.

Tuning. 5%.
I.K. I.K. I.K.
Vol.
K. 10.K.

3.V.
_J 150.K.
10.K. 9. V.
6.8.K. 2oon.. 5%. -9 V.

6. ra3.V. 50.1'10. V.

J.L.F7 J-LF.-47
7=-L:

Fig. 45
Circuit Diogrcril of the Bulova Model 270.
 Phones

16. pE 4 K 18 pF
Rod Ant. 05c. Col I. 68
r }-1 353 (2)
V5.
O.V.

3 6.V.

2N 146 For 2N 145 2N 146 or 2NI47 IN 295 310

Co th Blu
4. 04.V. Blu. nV. 0.1. 11F
6 3 4.V JGr
,cqC>,-
001. pF
ims, ``.-"Ye i. 3.8 V
3 Red
sum
1.0.1;.F

5.K 25 V.
\Red.
Blk
0005. 3.6.V.
22. K. 470
O..
220.K.
001. 50. 11E V.6
1J -F
0V
K.

39.K.
50
3.9. I 1.11-1 100.11 4.7.12.
50.µF. 100.(1.
J
Svc on Vol. Cont.

Fig. 46.

The Magnavox Companion Model AM 2.

64 TRANSISTOR SUPERHET RECEIVERS

that have no driver transistor the earpiece may is preferable to the normal potential divider
be connected to the output from the diode. system of bias supply as it consumes less current
The Magnavox Companion Model AM2 is from the battery. The saving is in the order of
shown in fig. 46. The most unusual thing about lima. which is quite substantial in a small re-
this set is probably its power supply which is ceiver and gives the set many hours of extra
only 4V. The I.F. transformers are also unusual. playing time.
They have untapped primaries. Resistive and This selection of receivers I have just given
capacitative feedback is used to neutralise the is, I think, fairly representative of those on the
I.F. stages the first of which has A.G.C. applied American market. In addition there are many
to it from the diode which develops a negative specialised receivers which are manufactured
voltage across the volume control. only in relatively small quantities such as the
A special method is used to supply the base 13 transistor car radio designed for use in
bias to the output transistors. There is a 100 Cadillacs. Such receivers are usually basically
ohm resistance in the emitter lead of V4 which similar to those shown here but have refine-
is also in the base of the output transistor. ments such as separate A.G.C. amplifiers which
These latter transistors are biased by the small would appear to add considerably to the cost
voltage drop across this resistor. This system but little to the performance of the receiver.

CHAPTER FIVE

JAPANESE RECEIVERS

The Japanese manufacture an enormous of the rim controlled type and are flush with
range of transistor superhets. Possibly more the case. This makes it easy to tune the receiver
than any other country in the world. The but virtually impossible for it to be switched on
majority of these sets are of the pocket type accidentally in the pocket.
and they really are small enough to slip in the Fig. 47 shows the circuit diagram of a six
pocket or handbag. transistor receiuer manufactured by National
The Japanese have shown a considerable Radio under pe No. AB -100. This receiver
amount of ingenuity in developing the com- covers the mw. band from 540 to 1600 Kc/s
ponents for these receivers. Of particular interest with a sensitivity of 300 microv./M. with 10mw.
are the tiny twin gang tuning condensers reference output power. The overall size of the
complete with trimmers which are enclosed in set is 2i" x 4.3/16" x li".
plastic cases only 1" x 1" x r in size. To TR-1 is a conventional autodyne converter
make so compact a unit a solid dielectric is
used, namely polythene. Because of the high with the local oscillation generated by feedback
dielectric strength of polythene the required from collector to emitter. The I.F. output is
plate area is considerably reduced. The I.F. selected and coupled to TR-2 by means of Ti,
transformers normally used are 1" x x i" in the first I.F. transformer. The I.F. amplifier
size. The coils are wound inside a ferrite cup, employs two stages and operates at a frequency
the inductance being varied by moving a ferrite of 445 Kc/s. TR-3 obtains its base bias from
disc up and down above this cup. the emitter lead of TR-2 the two transistors
being directly coupled as far as d.c. is con-
The loudspeakers are the permanent magnet cerned. Besides saving components this system
dynamic type and vary in size between 2" and has another advantage. On strong signals the
2k"; there are even some receivers which use A.G.C. voltage from the diode reduces the base
a speaker only 1i" in diameter. To provide bias on TR-2. This reduces the collector current
more space for components the speaker usually which lowers the voltage dropped across R6
has an almost flat cone with the speaker chassis thereby reducing the base bias on TR-3. Thus
closely following the contours of this cone. both transistors are controlled by the A.G.C.
The knobs on the cases are almost invariably system.
 TR.-I. TR.-2. TR.-3. D-1. TR.-4. TR-5. & TR.-6.
MC 101. OC. 45. OC. 45. 04.70. OC.71. OC. 71 x 2.
Cony. Ist. IF Ampl. 2nd. IF Ampl. Det. & A.G.C. AF Ampl. Power Output.
_R.12.
C.3.
220.0.
R 2. R.4. <41 R.I0.
0 0 500..µ A.
68.K. 68.K. o*I
tn 0 22.K.
C.S. T.2.17 C4. R.7
4 7.K.
L.2.
.,, +1011
15.pE 5. F. R14.
CI ,,,... :
E 150.K.
3
O
CR-31 O
:5 001.
I
3 R
1,43 )B CD, 270.n. 13. C 6
LL -= E
- T.t
4 6
is 6 6 ./.0 .
;0 0.01. C. 12.
IN C12© C.14.
p .F
:0 24-- B
iF R.I. 3.V.
IQ 005 p. F 2.K.
C.9.
16
C2 A.
8-9QpF C.8-
R.II. R.13.
10.p,F.
390.0. 22.0
3.V. 0
+I0°/o. +10%.
R 8
I

C. 10. 9.V. Batt

R.5 R.6. 0.025! =ix. UMW IiM
15.K 2-2.K. 820.0.
.+10%
30. p,E
3V 56 K.
30.
3.V.
10%.
i
CR-2I

Colour Dot.
6 o 0 5 6 0 o 5 a(C-
C
4 0 0 3

2 0 I 2 0 o 1
E

I 2 3
Ferrite Rod Antenna Coil. Osc. Coil. IF Trans. Transistor
For Coupled
L.I. L. 2.
Capacitor & Resistor
TI T.2. T 3.
Fig. 47.
The National Radio Model AB -100.
66 TRANSISTOR SUPERHET RECEIVERS

The audio amplifier uses three 0071's, one this system means that A.G.C. is applied to
as the driver and two in push-pull for the output both the converter and the I.F. amplifier.
stage. The output transistors can deliver 40mw. Although they use the same base bias supply
undistorted and 70mw. maximum into the the two transistors do not have the same col-
primary of the output transformer. The loud- lector current as may at first be supposed. It
speaker used has a diameter of 2". is the voltage difference between the base and
the emitter that determines the bias current
The circuit shown in fig. 48 is that of a seven and as the resistors in the emitter leads of the
transistor superhet made by National Radio. two transistors are different so are the collector
The receiver is a table model covering the currents. The output from the I.F. amplifier is
medium waveband from 535 to 1605 Kc/s. and coupled to the diode detector which provides
one of two shortwave bands. The shortwave the A.G.C. voltage in the usual manner. The
band may be either from 3.9 to 12 mc/s. (model audio output from the detector appears across
M) or from 6 to 18 mc/s. (model J). The sen- the volume control and is thus coupled to the
sitivity is 20muv/m on the m.w. band and two stage audio amplifier.
50 muv/m on the s.w. band.
The audio amplifier uses a Class A single
The frequency changer uses two 0C44's, one ended output stage which can give a maximum
as the mixer and the other as the oscillator. The output of 40mw. The loudspeaker has a dia-
local oscillator is the common base type and meter of 2".
injects its signal into the emitter of the mixer.
The R.F. signal is injected into the base of the Another extremely small receiver is the
mixer. Standard Radio Corporation model SR -F211,
the size of which is 3r x 2.7/16" x 1.1/16".
The rest of the receiver is similar to that Despite its tiny size this set uses a horizontally
shown in fig. 47, except that the output stage moving dial which runs along the top of the
uses two 0076's. The output power is 300mw. case. The tuning range is 540 to 1600 Kc/s.
undistorted and 450mw. maximum. The signal is picked up by a tuned ferrite rod
The receiver shown in fig. 49 is the Sanyo aerial of the slab type measuring 1k" x x
Model SC -14. This little radio measures only 1/6".
4.5/16" x 211-" x 1.5 /16". It uses a base injected The set uses six N.P.N. transistors, three R.F.
autodyne converter of conventional design, and three A.F. types. The converter, which is
transformer coupled to a single stage I.F. normal, feeds into the two stage I.F. amplifier.
amplifier. The I.F. amplifier is neutralised by In this receiver also the second I.F. transistor
means of a 30pf. capacitor taken from the obtains its base bias from the voltage drop
primary of the I.F. transformer to the base of across the emitter resistor of the first.
the transistor. A point contact diode is used The output stage is a Class B symmetrical
for detection and this also supplies the A.G.C. push-pull type driving a 2" diameter dynamic
voltage for the I.F. amplifier. The audio ampli- speaker. The maximum output power of this
fier consists of a single driver stage transformer stage is 100mw A thermister is used to improve
coupled to a Class B push-pull output stage. stabilisation.
A thermister has been used to help stabilise the
base bias on the output transistors. Normally An earpiece socket is provided.
the base current rises with temperature due to Fig. 52 shows the circuit of a pocket receiver
increasing leakage current from collector to of unusually high performance-the "Standard"
base and this, of course, increases the collector SR -G204 which uses seven transistors. The fre-
current. However, as the temperature increases quency coverage is from 540 to 1600 Kc/s on
the resistance of the thermistor decreases and the medium wave band.
so decreases the voltage on the base. This tends
to correct the effect of the leakage current. The frequency changer is of the base injected
Provision is made, as it is in most Japanese autodyne type which converts to the interme-
receivers, for listening to the receiver with an diate frequency of 455 Kc/s. The I.F. amplifier
earpiece which automatically disconnects the consists of two common emitter stages. A.G.C.
21" speaker. is applied to the first I.F. stage from the d.c.
output of the diode detector. The third transistor
Fig. 50 shows the circuit diagram of one of obtains its base bias from the emitter resistor
the world's smallest receivers. It measures only of the fifth transistor. All the I.F. transformer
21" x 3.11/16" x 1.1 /16". The converter is an primaries are tapped to reduce the load on
emitter injected autodyne which obtains its base them. Both I.F. transistors are neutralised by
bias from the same potential divider as the I.F. lOpf. capacitors. The A.F. output from the
amplifier. Apart from saving two resistances diode is R -C coupled to the first A.F. transistor.
ANT. TR.I. T R.3. T R. 4. TR. S D.I. T R.6. , T R.7
Mix. Ist.IF. 2nd. IF. Dat. AGC. AF Output.
V MC 101 / OC. 44. OC.45. OC. 45. 0A.70. 0A.71. OC..76 x 2.

C.20. R.I5.
R.9.
I.K. j_100.u.F
12 = 10.V.
5.2. I I "

2 T 2. T. 3.
C.IO. 2nd.IFT. C 18.
3r,d, IFT.
10 C. 9. C.B. r`u I
in, R3 .16K.
0.
0.05 .µ.F. 20
9 R.I. j; 5.pF. c. 19:
T. 4.
50.K. C.23.
30.1(500141)1 200. pE: tr) 10.
'
ErY
3.V.
III

1 SP
C.28.
12 f430.pF.

C. 5. C.I2. C.21.
R.3.
R.7. R.14. R 17 R. 18.
I.K. C. 24
300./1
.01. p,F0 nom
400.12. D.2.
A.O.C.
/ 300 MA 23B S.5.
R.4.
-
40.K. C.22. 1304LF 1.25.
3.V. 100. J.LF.
0.01.p.F. R.13.
10.V.
3. K.VR. 9.V M - I x 6)
6 S.3. dig
TR. 2. 12
a b S.I.
OSC. 2

C.I 2.
UL
III
C 7
C.6. R. 5. 5
lic C. 16.
t00..µ.F 10.K 430
10.V. 05. Pr 7 (H) 3 0 O. Fig. 48.
I

C.i5.
(J) 4P5E0 0
12 PE
Circuit Diagram of the
C.4 -S. a
National Radio
Model ME3-32l H or J
T R.2 C. 17
R.G. S.4. C.130.
(H) MC 101/0C.44. (H) 8.K.
(J) MC 102. C.27 T 0.05
F
(j) I. K.
kOTD 31.1.E

(H) 170 rv20,3.pF

(j) 120.'1/130.07
68 TRANSISTOR SUPERHET RECEIVERS
man, mmormraisaMcGaitnfo..s.r.,....uz-s,-

2773 2T 76 2T 65 R. 10. 21- 65 x 2

R. 4.
100.K.
R.11.
6.5.K.
R.I. C. 6.
R .7
40.K.
C. 0002.
2. p. F
T

-14t -1J1

C. S.
+--
5.p.F.
+
ay.
-
C 2. _

0-005 0.01.
liE JLF
Lt> C. P. R 5.0 9 '

R.2., R.3.
+
t ----J 1

5.6.K. I 2.K. _
30.
1.2. K. F

L_ R. 6. T-Cuve S -250.
C.3. 3.K. VR.
0 005.p.F

Fig. 49.
Circuit Diagram of the Sango Modcl

This transistor is operated in the common col- detector which is a diode. The A.F. and D.C.
lector mode. Although this gives little actual outputs are developed across a portion of the
gain, the transistor serves to match the relatively volume control which controls the base bias
high impedance output of the diode to the low and hence the gain of the receiver. The d.c.
impedance of the fourth transistor. The output output of the diode provides A.G.C. to the I.F.
stage is Class B push-pull and drives a 24" amplifier. The A.F. signal is also fed back to
speaker. The maximum output is 150mw. the base of the transistor which then operates
as an A.F. amplifier. The primary of the I.F.
A rather unusual feature of this receiver is transformer offers very little impedance to the
the provision of two earpiece sockets. Both A.F. signal and an A.F. transformer is used to
these may be used to provide a binaural effect couple the signal to the output transistor. The
in which case the speaker will be switched off. collector lead of the output is an auto trans-
Alternatively a single earpiece may be used and former which matches the output impedance of
in this case the speaker may either be left in the transistor to the much higher impedance of
circuit or cut out depending upon which ear- the crystal earpiece.
piece socket is used.
The I.F. of the set is 260 Kc/s and the sen-
The circuit shown in fig. 53 is that of an sitivity is 1 millivolt per meter. The maximum
earpiece only receiver. The circuit is extremely output to the earpiece is in the order of a
interesting because it uses a high degree of milliwatt.
component economy and simplicity which has As well as the receivers shown in this chapter
been used to reduce the cost of the receiver the Japanese are now beginning to make tran-
without sacrificing performance. The frequency sistor receivers which cover the F.M. bands as
changer and the output stage both use the same well as the usual shortwave and broadcast
potential divider to provide their base bias. The bands. At first sight it might appear that there
converter is the base injection type. IFT-1 which is very little use for a portable F.M. receiver
forms the I.F. load has an untapped primary as the main advantage of F.M. is the high
and couples the signal to the I.F. amplifier. The fidelity of reproduction that is possible which
output from the I.F. amplifier is fed to the is lost because the loudspeaker is incapable of
 '.X1':Mr10111." 1 If ZrE1,- Lormus^...k...s...racs-xesar

2 T 73 2T 76 1 T23G 2T 65 T (.9

I.

5.;LE 6.V.

0 02.
56.K. 5.6.K.
;IF

1.2.i K.
I 100.C1.

5. }LE
6. V.

33.K. 39. K.
2201.1. 22.K 2.2.K 33.K

22.K. 1 0I. 220..C1.

g

-F
= 20;LE 9V
10.V.

Fig. 50.
The °Standard') SR-D210.
ON
2 773 2T76 2776 1123 2T65 2T65x 2

5. J.L.F 6.V. 5.p.E 6N.

-11
f-

k: mom

O 5. ILE O
6. V. 9
5-6.K.
1
56.K.

SP 2'

5. 30 J -LE
K.

NUM =MI TH
6. V. V. 30 ILF:
2 K.3. 33. K. 3 V.

7 01
2 20 La .
L_
ill

Fig. 51.

Standard Radio Type SR -F211.

 2N J8A. 2NJ5A 2NJ5A. SID -46. 2NJ91:1 2NJ D. 2NJ9Ax 2.

10.pF. pF.
. 22.K.
---11 F -- -L.1M-71-

O
f.
u, C>
N a
01/4

11

22.K.

Cr

10.K.
1

-F S.V. 11,E
. r
ads 1.2. K.

33.K
H .N..
2-2. K. (:), +
d 3Q iF
3. V
I
220..C1.

6. V
UM -3x4.
Fig. 52.

Standard SR-G204.
 IF

200. 0005. 3.V

°F
L, 21

0
200.
2T -5I. 2T-61 10.K
2T-52.
0.005 J.I.F
1,005
p. F.

3O.j.F

560.11.

Fig. 53.

Ear -piece only Pocket Superhet.

 TRANSISTOR SUPERHET RECEIVERS 73

reproducing the entire audio spectrum. How- to devote one of the books in this series entirely
ever, there is another important factor. In many to this subject in the near future.
areas it is sometimes virtually impossible to
receive programmes on the broadcast band due While I am on the subject of future develop-
to interference from powerful but unwanted ments, it might be interesting to consider the
stations on adjacent channels. Because of the next advances to be made in the field of the
more or less line of sight range of F.M. trans- ordinary broadcast band portables. The main
mitters this problem is solved by the use of an possibility here is the further reduction in case
F.M. receiver. At the moment the mass produc- size. Although the pocket radios now being
tion of transistor F.M. receivers is being held made are very small they are still too bulky to
un by the high cost of suitable transistors, be carried in the pocket without a considerable
although such transistors are readily available. bulge. Slimmer receivers, perhaps i" thick, will
However, prices are likely to drop in the fairly certainly appear in the near future. Further
near future and transistorised F.M. radios will reductions in size are held up only by the
then probably become commonplace. development of smaller speakers which are
canable of reasonable performance. I have
Another development, which is perhaps even heard one Japanese set which used a speaker
more interesting, is the transistorised completely only 11" in diameter and yet gave a very good
portable television receiver. Although the prob- performance. This little speaker had a cone
lems are considerable these have now been area of about 2.4". A rectangular speaker could,
overcome and once again the only thing pre- therefore. be made with a similar performance
venting nroduction is the high cost of the tran- which measured only 2" x 1.2". Such a speaker
sistors themselves. This tonic falls somewhat would make possible the construction of radios
outside the range of this book, however, I hope almost small enough to be worn on the wrist.

CHAPTER SIX

FRENCH AND GERMAN RECEIVERS

The receivers manufactured by the French means of a most unusual I.F. transformer. This
have tended to follow a fixed pattern rather transformer has three windings, instead of the
more than in other countries. Their receivers more usual two, all of which are tuned. Each
almost invariably use six or seven transistors of the windings has the same inductance and
and there has been little attempt at component two of them are tapped to match the impe-
economy. They do, however, make their sets in dances of the transistors. By using this trans-
a wide range of sizes though nothing so small former selectivity equivalent to that of a two
as the Japanese receivers have yet been pro- transistor I.F. strip is obtained.
duced.
The German circuits have more variety and A crystal diode, type 0A70, is used as the
several receivers have been produced which second detector and as the A.G.C. voltage
endeavour to obtain a high performance with source. This drives a two stage audio amplifier
fewer than usual transistors. A good example of conventional design. The driver is an 0071
of this is one of the Grundig receivers illustrated transformer coupled to a symmetrical, Class B,
in fig. 54. This set uses five transistors. Two push-pull output stage.
R.F. and three A.F. types. The signal is selected Fig. 55 shows another Grundig circuit which
by a tuned ferrite rod aerial and taken to the is very similar to the last one. Two I.F. stages
frequency changer from a tapping on the coil. are used, however, and a second diode shunts
The converter is an 0C44 which uses emitter one of the I.F. transformers. With a strong
injection in the normal way. The I.F. output signal sufficient voltage is applied to this diode
is coupled to a single 0C45 I.F. amplifier by to cause it to conduct thereby shunting the coil.
0G. 44.

Five Transistor Grundig Receiver.

 OC 44. OA.70. OC. 45. OC. 45. OA.70. 0 C. 71. OC. 72 x 2

47- 150. pF 560 fl .

6 8.pif 180.pF
220.11.
{ 1

22.nE

270.1
ally
11 c--
C>
p F "9"" II c
dI ic) PF
T70.

270.
u. 47.52. PF

0.
1-Th II
vi a 6, ail,
4.7. K.

4. nF.
K.
4(1500. 22.nF
47 nF 8. 14F.

2-5.mA
0
2.2. 2.2.k. 7. K. 22K. 10. 50. NF
1

10 nF 10 nF
MN= MINIM .... 5.0.
47TnF 10. nF 10. nF
10 K 330 100. 130.
11. -Cl. n.

50.
10. K. 1.5.K. 33. K.

T Is 0..n.
eI =_}

Fig. 55.
Six Transistors Grundig Receiver.
 38 pF 38 p F

t-Z)-(5V6P 1 N400 II
GO PO
100. 2N 137. 2.f,1 136. 2 N 135. I N143.,
pF

-
1
9,V
100. p.F.
- 0
Coil o 0 20.nE
Pack. T
;Inter.
0 Acc. OC.
Osc. 6-8.K.
50.nE )
0 0 5.K.
2N 137 50. n E
GO PO OC I
-n_4111_,
w.
50.nE.
490.
K K. 22070..- IS
-4-
50LE -1 mem
100.K.
212.
pEi J50 nF
100-7E
33.1 K. 33.
MOM
41K.
10 p.F

2N !
100.K.

4.7.52.

--c

6 8.K.

Fiej. 56.
A 7 Transistor, 3 Wave Band Receiver Made by ECOTRON.
 TRANSISTOR SUPERHET RECEIVERS 77

This reduces gain and so the diode acts as an it to the first I.F. stage. The I.F. amplifier uses
auxiliary A.G.C. system augmenting the A.G.C. two stages both as common emitter amplifiers.
provided by the second detector. A.G.C. is The base biases for these stages are taken from
applied only to the first I.F. stage, the second the same potential divider. The voltage is varied
stage being operated at maximum gain all the by the d.c. output from the diode so that A.G.C.
time. is applied to both stages. The second stage,
A temperature dependant resistor is used to however, is operated at a higher current level
stabilise the push-pull output stage which con- than the first so that the variation in gain of
sumes 2.5 ma. with no signal input. this stage is only slight and near the optimum
Grundig also make a seven transistor receiver even with strong signals.
the circuit of which is similar to the last. A The output from the second detector is R.C.
further stage of audio amplification is used and coupled to a two stage A.F. amplifier. The
the battery voltage is reduced to 4.5. common emitter driver stage has an unbypassed
The vast majority of French receivers cover resistor in its emitter which provides negative
both the medium and long wave bands. Many feed back and increases the input impedance
sets also receive one or more of the short wave and the quality of reproduction. It also reduces
band, such a receiver is shown in fig. 56. This the gain, however, and so a 50 microfarad con-
set uses seven transistors, 4 R.F. types and denser in series with a 22 ohm resistor may be
3 A.F. types, and a crystal diode. switched in parallel with the emitter resistor.
The frequency changer has a separate oscilla- The effect of this is to reduce the A.F. feedback
tor and mixer. The oscillator is the common without affecting tne D.C. feedback so that the
emitter type and feeds into the emitter of the gain is increased.
mixer. The signal is picked up and tuned by The driver is transformer coupled to the
a ferrite rod aerial for the medium and long output stage which uses two 2N187 transistors
wave bands and by an external aerial on the in a Class B symmetrical push-pull circuit trans-
shortwave band for which an internal tuned former coupled to the loudspeaker. A small
R.F. transformer is used. The R.F. signal is fed
to the base of the mixer. amount of negative feedback is applied to the
base of the driver from the secondary of the
The I.F. output from the mixer is selected by output transformer. This improves the quality
a conventional I.F. transformer which couples but reduces the gain by about 6 db.

CHAPTER SEVEN

TRANSISTORS USED IN SUPERHETS

A vast range of transistors suitable for use in of the same type. Sometimes this is impossible
superhet circuits are now available. No two due to the required type being unavailable. In
types of transistors are the same although two this case, a near equivalent must be used and
different manufacturers may make transistors this may be chosen from the list given further
so similar as to be readily interchangeable. on in this chapter.
Most transistors are manufactured with a In reading about and dealing with transistors
specific purpose in mind although they may be you will meet many terms which have been
used for a wide variety of functions. The coined for use with semiconductors. A list of
Mullard 0C44 for example is designed as a these, together with their meaning, is given
frequency changer, mixer or R.F. amplifier, but below. However, because of the rapid develop-
it could be used as an I.F. or even an A.F. ments in this field new words and phrases are
amplifier. The 0C45 on the other hand is an appearing all the time so that you may come
I.F. amplifier. It would work as a frequency across quite a few words that are not included
changer but would have a performance inferior here.
to the 0C44.
Alloy junction: A junction produced by
As the transistors of one manufacturer can alloying a metal such as indium to the semi-
differ so much from those of another it is always conductor such as germanium or silicon. In the
desirable to replace a bad transistor by another case of indium N type germanium is used, the
78 TRANSISTOR SUPERHET RECEIVERS

indium producing a P type impurity and acting In this condition the transistor has the follow-
as the collector or the emitter. ing characteristics : Low input impedance, high
Alloy transistor: A very common type of output impedance, maximum operating fre-
transistor made by the above mentioned tech- quency, small collector leakage current Ic(0),
nique. zero phase shift between the input and the out-
Alpha: The current gain of a transistor put and a current gain of less than one.
operated as a common base amplifier. In a Common Collector: An amplifier operates
junction transistor the value of alpha is always in this mode when the collector is common to
slightly less than one, but in the more or less the input and output circuits. In this condition
obsolete point contact type is usually greater the transistor has the following characteristics :
than one. When alpha is known the common High current gain, approximately equal to beta,
emitter current gain may be calculated as it is high input impedance, low output impedance,
a frequency cutoff varying with source impedance
equal to where alpha = a. and zero phase shift between the input and
1-a output.
Alpha -cutoff frequency: A measure of the Common Emitter: An amplifier operates in
high frequency performance of a transistor this mode when the emitter is common to the
defined as the frequency at which the current input and output circuits. In this configuration
gain of a transistor operated in the common the transistor displays the following character-
base mode is reduced to 0.707 of its gain at istics : High current gain, medium input and
1 Kc/s. That is a reduction in gain of 3db. output impedances, maximum power gain,
Base: One of the electrodes of a transistor, maximum operating frequency much lower than
corresponding roughly to the grid of a ther- for common base and 180° phase shift between
mionic valve. input and output.
Base bias: The voltage applied to the base Complimentary symmetry: A symmetrical
of a transistor. circuit making use of the complimentary pro-
Base current: The current flowing through perties of P.N.P. and N.P.N. transistors. For
the base. example, transformerless push-pull stages, oscil-
lators and switching circuits.
Beta: The current gain of a transistor Coupling: The method of conveying the
operated in the common emitter mode. If the signal from one stage to the next. This may be
beta value is known and the value of alpha is
resistance -capacity, inductance -capacity, trans-
required it may be determined as alpha =
B /(1 + B) where Beta = B. former or direct coupling.
Beta -cutoff frequency: The frequency at Current gain: Ratio of output to input
which the current gain of a transistor operated current.
in the common emitter mode is reduced by 3db Depletion layer transistor: A transistor such
from its value at 1 Kc/s. Beta cutoff frequency as the snacistor that relies directly on the
is approximately equal to the alpha cutoff fre- motion of carriers through the area near the
quency divided by beta. barrier that has no current carriers when
Carriers: The electrons or holes which carry reversely biased.
a current through a semiconductor. A flow of Derating: The adjustment that has to be
electrons carries current from negative to posi- made to a transistor parameter to compensate
tive and a flow of holes carries a current from for operation under a condition other than that
positive to negative. at which the rating is specified. For example
Collector: One of the electrodes of a tran- the collector dissipation permissable reduces
sistor corresponding roughly to the anode of a with the ambient temperature.
thermionic value. Diffused -junction transistor: A transistor in
Collector bias: The voltage applied to the which the collector and emitter are formed by
collector of a transistor. diffusion of an impurity into the semiconductor.
Collector cutoff current: The current that Diode: A two electrode semiconductor.
flows in the collector when the emitter current Double -base diode: A type of transistor
is zero. which is similar to a diode in that it has only
Collector efficiency: The percentage of the one junction. It has, however, two base con-
Hower from the supply that is delivered to the nections, one either end of a semiconductor rod,
load. and may be used in oscillator and switching
Common Base: An amplifier is said to be circuits.
operated in the common base mode when the Double -base junction transistor: A tetrode
inse is common to the input and output circuits. transistor with two separate connections to the
 TRANSISTOR SUPERHET RECEIVERS 79

base the main purpose of which is to increase of a transistor to dissipate the heat generated
the maximum operating frequency. Certain by the transistor thereby increasing permissable
types have also been made for use as high collector dissipation. The heatsink may also be
efficiency mixers, the two signals being injected used when soldering a transistor to conduct heat
into different base contacts. from the electrode leads to prevent the heat of
Electro-forming: A process used to produce the soldering iron reaching the junction.
a P -N junction in point contact diodes and tran- Hole: A current carrier with a positive
sistors. It involves passing a large current charge.
through the contact for a short time. Impurity: A metallic element which is added
Emitter: One of the electrodes of a transistor in minute quantities to a semiconductor to give
similar in function to the cathode in a ther- it either a surplus or a shortage of electrones.
mionic valve. Intrinsic semiconductor: Any semiconductor
Emitter follower: A common collector am- that has neither a shortage nor an excess of
plifier so called because of its similarity in electrons.
behaviour to the cathode follower used in Junction diode: A diode which rectifies, de-
thermionic valve practice. modulates, or mixes by means of a P -N junction
Feed -back capacitance: The interelectrode rather than a point contact.
capacitance of a transistor which causes feed- Junction transistor: A transistor that has two
back from the output to the input. junctions that is between the emitter and base
Feed -back resistance: The internal resistance and the collector and base. This type is the most
of a transistor which causes feedback from the commonly used.
output to the input. Madt.: A commonly used abbreviation for
Forward bias: The application of a voltage Micro -alloy diffused base transistor.
to a P -N junction in such a direction as to cause Micro -alloy transistor: A transistor in which
a large current to flow. Reversing the voltage the emitter and collector electrodes are formed
would result in reverse bias in which case only by alloying a thin film of impurity to the semi-
a very small current would flow. conductor. Behaviour of this type of transistor
Frequency cutoff: The frequency at which is similar to that of the surface barrier type.
the current gain of a transistor is 0.707 times N -Type: A semiconductor containing
the gain measured at 1 Kc/s. That is a reduc- donor impurity.
tion of 3db.
N.P.N.: A transistor with N -type collector,
Germanium: The 32nd element in the P -type base, and N -type emitter.
periodic table the properties of which make it
the most widely used semiconductor in the Peak Inverse Voltage: Maximum voltage
manufacture of transistors. Because of its low that may be applied in the reverse direction to
melting point it is relatively easy to handle but a diode or transistor before causing breakdown.
for the same reason a transistor made with Photo diode: A junction diode which is
germanium cannot operate at high tempera- designed to respond to variations in incident
tures. The germanium used in semiconductor light. The reverse current alters in step with
devices has to have an impurity content no the illumination. All junction diodes display
greater than one part in a thousand million. this property but some types are made solely
Grounded Base: This term is synonymous for use as photo diodes.
with common base. Photo transistor: A device which takes
Grounded collector: Synonymous with com- advantage of the light sensitive properties of
mon collector. a semiconductor and at the same time provides
Grounded Emitter: Synonymous with com- amplification. Photo transistors have a partially
mon emitter. or wholly translucent casing to enable the light
to reach the emitter junction which is the most
Grown Junction Transistors: Transistor that sensitive point.
is formed by the addition of impurities to the P -N junction: A junction between P -type and
semiconductor during the formation of the N -type semiconductors.
crystal.
P -N -P transistor: A junction transistor with
H -Parameters: Parameters that combine P -type collector, N -type base and P -type
both conductive and resistive parameters. The emitter.
H stands for Hybrid. Point contact diode: A diode formed by the
Ileatsink: A piece of material having a high contact of a sharp piece of wire and a semi-
thermal conductivity which is used in the case conductor.
80 TRANSISTOR SUPERHET RECEIVERS

Point contact transistor: A transistor with Surface barrier: The barrier formed at the
two wire contacts very close together on a surface of the semiconductor by trapped
semiconductor. carriers.
Power transistor: Any transistor designed to Surface barrier transistor: The type of tran-
handle more than about one watt of power. sistor that uses surface barriers instead of
In this type of transistor the collector is nor- junctions. It has properties which make it
mally in good thermal contact with the case especially useful at high frequencies and in the
which is then bolted to a heat shunt to increase circuits where a very low power consumption
permissable collector dissipation. is required. The surface barrier transistor will
P -Type: A semiconductor containing an in fact oscillate with only about 1 /10th of the
acceptor impurity. power required to maintain oscillation for a
Rate grown transistor: A transistor in which junction transistor.
the junctions are formed by varying the rate of Symmetrical transistor: A junction transistor
growth in the semiconductor crystal. in which the emitter and collector electrodes are
Reverse bias: A semiconductor junction is identical. This type of transistor was designed
said to be reversely biased when the voltage is for switching circuits mainly in computers.
applied in such a direction as to allow only a Tandem pair: Two transistors in a single
low current to flow. envelope with the emitter of one transistor
Selenium: A semiconductor used for some internally connected to the next.
types of diode. Tetrode transistor: Any transistor having
Semiconductor: A material that has pro- four electrodes.
perties in between those of an insulator and Thermal run -away: As the collector current
conductor. increases with temperature due to increased
Silicon: The 14th element in the periodic leakage to the base, the situation could arise
table used in making diodes and transistors. whereby the transistor increases its own tem-
It is more difficult to use than germanium perature to such an extent that the semi-
its high melting point but for the conductor is melted or destroyed. This is known
same reason a transistor made from silicon will as thermal run -away.
operate satisfactorily at fairly high tempera- Transistor: A type of valve using a semi-
tures. conductor and having more than two electrodes.
Stability: This term is used in the case of Uni-junction transistor: A term synonymous
transistors to specify the ability of a transistor
in a given circuit to remain at or near the d.c. with double base diode.
operating point for which the circuit was Zener break -down: When a large reverse
designed. voltage is applied to a semiconductor a point
Stabilisation: Control of the d.c. operating is reached when a large current starts to flow.
point of a transistor. This is the zener break -down point.

TRANSISTOR SPECIFICATIONS

Because of the very wide range of transistor I believe, cover most of the types found in
types it is frequently difficult to find the charac- receivers.
teristics of a certain transistor used in a receiver Because it is frequently difficult to obtain
without writing to the manufacturer. This may a transistor one requires, I have also compiled
be difficult and may take a considerable amount an equivalent list. This is an international list
of time when the receiver is a foreign one which links the transistors of Great Britain,
which, in these days of ever increasing trade, America, and the continent.
it frequently is.
Although one transistor may be listed as a
For this reason I have compiled a list of close equivalent to another this does not mean
transistors together with their more useful that they are interchangeable in every case. It
characteristics. It is by no means a complete merely means that their characteristics are
catalogue of the world's transistors but it does, similar.
 TRANSISTOR SUPERHET RECEIVERS 81

EQUIVALENTS LIST OF BRITISH, EUROPEAN AND

AMERICAN SEMICONDUCTORS

Types without brackets are direct equivalents.

Types shown in brackets have comparable characteristics, and can be used in the majority of circuits with
very minor component value changes.

Type Equivalent Type Type Equivalent Type Type Equivalent Type

1N34 (0A85); (1N478) I N192 (0A87); (1N490) 2N104 (0071)
1N34A (0A85); (1N478) 1N198 (0A95); (1N618) 2N105 (0065); (0066)
1N38 (0A85); (1N478) 1N270 (0A5) 2N106 (0071)
1N38A/B (0A85); (1N478) 1N277 (0A5) 2N109 (0072); (2N281)
1N43 (0A85); (1N478) 1N295 (0A70) 2N113 (0C45)
1N44 (0A85); (1N478) 1N476 0A81 ; 1N476 2N114 (0C44)
1N45 (0A85); (1N478) 1N478 0A85 ; 1N478 2N115 OCI6 ; 2N115
1N46 (0A85); (1N478) 1N480 0A86 ; 1N480 2N1I6 (0065); (0066)
1N47 (0A85) ; (1N478) 1N490 0A87 ; 1N490 2N123 (0076)
1N48 (0A85); (1N478) 1N541 0A79 ; 1N541 2N130 (0065); (0066)
1N50 (0A85) ; (1N478) 1N542 2-0A79; 1N542 2N131 (0065); (0066)
1N51 (0A85); (1N478) 1N616 0A73 ; 1 N616 2N132 (0065); (0066)
1N52 (0A85); (1N478) 1N617 0A91 ; 1N617 2N133 (0065); (0066)
1N54 (0A85); (1N478) 1N618 0A95 ; 1 N618 2N135 (0C45)
1 N54A (0A85); (1N478) 2N27 (007 I ) 2N136 (0C45)
1N57 (0A85); (1N478) 2N28 (0071) 2N137 (0C44)
1N58 (0A85); (1N478) 2N34 (0072) 2N138 (0072)
IN58A (0A85); (1N478) 2N34A (0072) 2N138A (0072)
1N60 (0A70); (1N87) 2N36 (0072) 2N139 (0C45)
1N61 (0A85); (1N478) 2N37 (0072) 2N140 (0C44)
1N62 (0A85); (1N478) 2N38/A (0072) 2N145 (0C45)
1N63 (0A85); (1N478) 2N41 (0065) ; (0066) 2NI46 (0C45)
1N64 (0A70); (1N87A) 2N43 (0072) 2N147 (0C45)
1N65 (0A81); (1N476) 2N43A (0071) 2N155 (00 6)
1N66 (0A85); (1N478) 2N44 (0072) 2N156 (0C16)
1N67/A (0A95); (1N618) 2N44A (0072) 2N158 (0C16)
1N68 (0A85) ; (1N478) 2N45 (0072) 2N166 (0C45)
1N68A (0A95); (1N618) 2N46 (0065); (0066) 2N167 (0076)
1N69 (0A85); (1N478) 2N47 (0065); (0066) 2N168 (0C45)
1N70 (0A85); (1N478) 2N48 (0065); (0066) 2N168A (0C44)
1N75 (0A85); (1N478) 2N49 (0065); (0066) 2N169 (0C45)
1N81 (0A85); (1N478) 2N54 (0072) 2N169A (0C45)
1N86 (0A85); (1N478) 2N55 (0072) 2N170 (0C45)
1N87/A 0A70 ; 1N87A 2N56 (0072) 2N172 (0C44)
1N88 (0A81); (1N476) 2N62 (0072) 2N173 (0C16)
1N89 (0A85); (0A95) 2N63 (0072) 2N175 (0065); (0066)
1N90 (0A95); (1N618) 2N64 (0072) 2N176 (0C16)
1N95 (0A85); (0A95) 2N65 (0072) 2N180 (0072)
1N99 (0A85); (0A95) 2N76 (0071) 2N182 (0076)
1N111 (0A85); (1N478) 2N77 (0071); (0066) 2N183 (0076)
1N112 (0A85); (1N478) 2N78 (0C45) 2N184 (0076)
1N113 (0A81); (1N476) 2N79 (0071) 2N185 (0072)
1N114 (0A81); (1N476) 2N85 (0072) 2N186 (0072)
IN115 (0A81); (1N476) 2N86 (0072) 2N187 (0072)
1N116 (0A85); (1N478) 2N87 (0072) 2N188 (0072)
1N117 (0A85); (0A95) 2N88 (0065); (0066) 2N189 (0072)
1N126 (0A95); (1N618) 2N89 (0065); (0066) 2N190 (0072)
1N127 (0A95); (1N618) 2N90 (0065); (0066) 2N191 (0072)
1N128 (0A95); (1N618) 2N94 (0C45) 2N192 (0072)
1 N135 (0A85); (1N478) 2N94A (0C45) 2N194 (0C44)
1N191 (0A86); (1N480) 2N96 (0071) 2N195 (0072)
 82 TRANSISTOR SUPERHET RECEIVERS

Type Equivalent Type Type Equivalent Type Type Equivalent Type

2N196 (0072) 2N326 (0C16) 1340 (0072)
2N197 (0072) 2N352 (0C16) 1350 (0072)
2N198 (0072) 2N353 (0C16) 1360 (0072)
2N199 (0072) 2N378 (0C16) 1390 (0045)
2N200 (0071) 2N380 (0C16) 1400 (0045)
2N204 (0071) 2N386 (0C16) 1410 (0C45)
2N205 (0071) 2N394 (0076) A01 (0C45)
2N206 (0071) 2N395 (0076) CG1-E (0A81) ; (1N476)
2N207 (0065) ; (0066) 2N396 (0076) CG4-E (0A81) ; ( I N476)
2N207A (0065) ; (0066) 2N397 (0076) CG12-E (0A73); (0A90)
2N207 B (0065) ; (0066) 2N402 (0071); (0072) CK705 (0A85) ; (1N478)
2N215 (0071) 2N403 (0072) CK707 (0A85); (1N478)
2N217 (0072) 2N404 (0076) CK708 (0A85); (1N478)
2N218 (0C45) 2N405 (0071) CK13A (0A85); (1N478)
2N219 (0C44) 2N406 (0071) CK721 (0071)
2N220 (0065) ; (0066) 2N407 (0072) CK722 (0071)
2N231 (0C45) 2N408 (0072) CK725 (0071)
2N232 (0C45) 2N409 (0045) CK727 (0071)
2N233 (0C45) 2N410 (0C45) CK751 (0072); (2N281)
2N233A (0C45) 2N411 (0C44) CK759 (0C45)
2N234 (0C16) 2N412 (0C44) CK760 (0C45)
2N234A (0C16) 2N413 (0C45) CK761 (0C45)
2N235 (0C16) 2N413A (0C45) CK762 (0C44)
2N235A (0C16) 2N414 (0C45) CK766 (0C44)
2N236A (0C16) 2N414A (0C45) CK766A (0C44)
2N237 (0065) ; (0066) 2N425 (0076) CV425 (0A81) ; (1N476)
2N238 (0072) 2N426 (0076) CV442 0A73 ; 1N616
2N241 (0072) 2N427 (0076) CV488 (0A81) ; (1N6)47
2N241A (0072) 2N428 (0076) CV1353 (0A81 ; 1N476
2N242 (0C16) 2-0A72 2-0A72 CV2389 (0071)
2N252 (0C44) 2-0A79 2-0A79; 1N542 CV2400 (0071)
2N253 (0C45) 2-0C16 2-0C16 CV3934 (0A85); (1N478)
2N254 (0C45) 2-0C30 2-0C30 CV5105 0C45
2N265 (0072) 2-0072 2-0072; 2N282 DP6 (0A8) ; (1N478)
2N268 (0C16) 8D (0C45) DP6C (0A85); (1N478)
2N269 (0076) 8E (0C45) DR126 (0065); (0066)
2N270 (0072) 8F (0C45) DR128 (0065); (0066)
2N279 0070 ; 2N279 206 (0071); (0066) DS60 (0A85) ; (1N478)
2N280 0071 ; 2N280 207 (0071); (0066) DS61 (0A85); (1N478)
2N281 0072 ; 2N281 208 (0071) ; (0066) DS61A (0A85); (1N478)
2N282 2-0072; 2N282 222 (0C45) DS62 (0A85); (1N478)
2N283 0071 ; 2N280 223 (0C44) DS604 (0A81); (1N476)
2N284 0076 ; 2N284 225 (0C45) DS611 (0A81) ; (1N476)
2N284A 0077 ; 2N284A 22.8 (0C44) DS621 (0A81) ; (1N476)
2N292 (0C45) 300 (0072) G26 (0A85); (3/1N478)
2N293 (0C45) 301 (0072) GD1E (0A85); (1N478)
2N296 (0C16) 302 (0072) GD1Q (0A85); (1N478)
2N297 (0C16) 310 (0072) GD2E (0A85) ; (1N478)
2N301 (0C16) 350 (0072) GD2Q (0A85); (1N478)
2N301A (0C16) 352 (0072) GD3 (0A70) ; (0A73)
2N302 (0076) 353 (0072) GD3E (0A85) ; (1N478)
2N303 (0076) 830 (0C44) GD4E (0A85) ; (1N478)
2N307 (0C16) 1032 (0072) GD5 (0A79)
2N311 (0076) 1033 (0072) GD6 (0A70)
2N315 (0076) 1034 (0072) GD8 (0A81) ; (0A85)
2N316 (0076) 1035 (0072) GEX34 (0A90)
2N317 (0076) 1036 (0072) GEX35 (0A73)
2N322 (0072) 1320 (0072) GEX44 (0A81)
2N325 (0C16) 1330 (0072) GEX45/1 (0A85); (1N478)
 TRANSISTOR SUPERHET RECEIVERS 83

Type Equivalent Type Type Equivalent Type Type Equivalent Type

GEX45/2 (0A85); (1N478) 0A5 0A5 0C45 0C45
GFT20 (0072) 0A7 0A7 0057 0057
GFT26 (0C16) 0A9 0A9 0058 0058
GFT44 (0C45) 0A31 0A31 0059 0059
GSD5/2 (0A90) 0A47 0A47 0065 0065
GT14 (0072) 0A50 0A81 ; 0A85 0066 0066
GT14H (0065) ; (0066) 0A51 0A81 ; 0A85 0070 0070 ; 2N279
GT20 (0072) 0A52 0A81 ; 0A85 0071 0071 ; 2N280
GT2OH (0065); (0066) 0A53 0A81 ; 0A85 0072 0072 ; 2N281
GT38 (0071); (0066) 0A54 0A81 ; 0A85 0073 0071
GT81 (0072) 0A55 0A81 ; 0A85 0075 0075
GT8I H (0065) ; (0066) 0A56 0A81 ; 0A85 0076 0076 ; 2N284
GT109 (0072) 0A57 0A81 ; 0A85 0077 0077
GT122 (0076) 0A58 0A81 ; 0A85 0C170 0C170
GT222 (0071) 0A60 0A70 00601 (0070); (2N279)
GT759 (0C45) 0A61 0A81 00602 (0071)
GT760 (0C45) 0A70 0A70 ; 1N87 ; 00604 (0072); (2N281)
GT761 (0C45) (0A90) 00624 (0065) ; (0066)
GT762 (0C44) 0A71 0A81 OCP70 0071
HAI (0071) ; (0066) 0A72 0A72 ORP30 ORP30
HA2 (0071) ; (0066) 0A73 0A73 1N616 ORP90 ORP90
HA3 (0071) ; (0066) OA 74 0A81 0A85 RL31 (0A81) ; (1N476)
HA8 (0065) ; (0066) 0A79 0A79 1N541 RL32 (0A81); (1N476)
HA9 (0065) ; (0066) 0A81 0A81 1N476 RL41 (0A70) ; (1N87A)
HA I 0 (0065) ; (0066) 0A85 0A85 1N478 RL43 (0A81) : (1N476)
HD2053 (0A85); (IN478) 0A86 0A86 1N480 RL44 (0A81); (1N476)
HD2057 (0A85); (1N478) 0A87 0A87 1N490 RL 143 (0A81); (1N476)
HD2060 (0A85); (1N478) 0A90 0A90 RL231 (2-0A79)
HD2063 (0A85); (1N478) 0A91 0A91 1N617 RL232/B (2-0A79)
HS3 (0076) 0A95 0A95 1N618 T34A (0065); (0066)
HS4 (0076) 0A150 (0A81); (0A85) T34B (0065); (0066)
JI (0072) 0A159 (0A73) T34C (0065) ; (0066)
J2 (0072) 0A160 (0A70); (1N87) T34D (0072) ; (2N281)
J3 (0072) 0A161 (0A85); (1N478) T34E (0072); (2N281)
JP1 (0072) 0A172 (0A72) T34F (0072) ; (2N281)
M550A (0A85); (1N478) 0A200 0A200 T1040 (0C16)
M550B (0A85); (1N478) 0A201 0A201 T1041 (2-0C16)
M3100 (0A85); (1N478) 0A202 0A202 TS16I (2-0072)
MN24 (0C16) 0A210 0A210 TS162 (0071)
MN25 (0C16) 0A211 0A211 TS163 (0071)
MN26 (0C16) 0A214 0A214 TS165 (0072); (2N281)
NU34 (0A85); (1N478) OAP12 OAP12 TS166 (0070); (0065)
NU38 (0A85); (IN478) 0C16 0C16 ; 2N115 TS620 (0065); (0066)
'N U58 (0A85); (1N478) 0C30 0C30 TS621 (0065); (0066)
N U58 (0A85); (1N478) 0C44 0C44 Z113 (0072)
 84 TRANSISTOR SUPERHET RECEIVERS

BRITISH TRANSISTORS
Number VC Max. Ic Max. Alpha cut-off Application and
Type (volts) (ma) PC Max Beta Frequency Comments
Associated Transistors Ltd.
AP9 Class A audio amplifier.
(P.N.P.) 30 50 aU mw. 75 700 Kc/s Power gain 41db.
B.T.H.
GT31 A.F. amplifier noise figure
(P.N.P.) 15 125 mw. 20 800 Kc/s 12db.
GT32 A.F. amplifier noise figure
(P.N.P.) 15 125 mw. 40 900 Kc/s 12db.
GT33 A.F. amplifier noise figure
(P.N.P.) 15 125 mw. i0 1.0 me/s. 12db.
GT41 I.F. amplifier min. f. alpha
(P.N.P.) 15 100 mw. 30 4 me/s. 3 me/s.
3T42 I.F. amplifier min. f. alpha
(P.N.P.) 15 100 mw. 60 6 me/s. 5 me/s.
GT43 I.F. amplifier min. f. alpha
(P.N.P.) 15 100 mw. 100 me/s. 7 me/s.
G.E.C.
GET102
(P.N.P.) 30 1 amp. 200 mw. 60-160 1 J Inc/s. High gain A.F. transistor.
GET103 A.F. amplifier for Class B
(P.N.P.) 30 1 amp. 200 mw. 30-80 1 nic/s. push-pull (800 mw.).
GET104
(P.N.P.) 30 1 amp. 200 mw. 30-80 1 me/s. A.F. amplifier.
GET113
(P.N.P.) 15 1 amp. 200 mw. 60-160 1.5 me/s. High gain A.F. amplifier.
GET114
(P.N.P.) 15 1 amp. 200 mw. 30-80 1 me/s. A.F. amp. for Class B
push-pull (800 mw.).
GET871
(P.N.P.) 15 125 55 mw. 20 (min) 3 me/s (min) Low gain R.F. amplifier.
GET872 R.F. amplifier (medium
(P.N.P.) 12 125 55 mw. 30 (min) 7 me/s (min) gain)
GET873 I.F. amplifier 35db gain @
(P.N.P.) 12 10 55 mw. 20 (min) 3 me/s (min) 465 Kc/s.
GET874 Frequency changer Con -
(P.N.P.) 12 10 55 mw. 30 (min) 7 me/s (min) version gain 20db.
Mullard Ltd.
0C16 Power output used in car
(P.N.P.) 16 1.5 amps. 8.3 watts 45dc 200 Kc/s. radio available in matched
pairs as 2-0C16.
0C19 A.F. power amplifier for use
(P.N.P.) 16 1.5 amps. 8.3 watts 45dc 200 Kc/s. as output stage in car
radio (2.0W).
0C27 High gain A.F. amplifier
(P.N.P.) 16 3.5 amps. 12.5 watts 75dc for car radio.
0C44 Frequency changer conver-
(P.N.P.) 10 5 70 mw. 100 15 me/s. sion gain 27db.
0C45 I.F. amplifier with 30 db
(P.N.P.) 10 5 70 mw. 50 6 me/s. gain @ 470 Kc/s.
0070 Low noise, low gain audio
(P.N.P.) 20 10 125 mw. 30 500 Kc/s. amplifier.
0071 Medium gain audio ampli-
(P.N.P.) 20 10 125 mw. 47 600 Kc/s. fier.
0072 Audio output amp. power
(P.N.P.) 16 125 125 mw. 50 output = 38 mw.
2-0072
r.N.P.) matched pair of 0072 for class B push-pull use power output = 390 mw.
 TRANSISTOR SUPERHET RECEIVERS 85

Number VC Max. lc Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequencl Comments
0075
(P.N.P.) 20 10 125 mw. 90 900 Kc/s. High gain A.F. amplifier.
0C170 Short wave converter, mixer,
(P.N.P.) 20 10 100 mw. 80 70 mc/s. oscillator, and F.M. I.F.
amplifier.
Newmarket Transistors Ltd.
V10/15A A.F. amplifier 29db gain
(P.N.P.) 10 30 200 mw. 20 600 Kc/s. when R -C coupled.
V10/30A Class A amp. to 100 mw.
(P.N.P.) 10 30 200 mw. 40 700 Kc/s. Class B to 500 mw.
V10/50A High gain A.F. amp. 33db
(P.N.P.) 10 30 200 mw. 75 1.2 mc/s. R -C coupled.
V15/20R R.F. Transistor for use in
(P.N.P.) 15 12 25 mw. 25 30 mc/s. all -wave portables and as
I.F. amp. in F.M. receivers.
V6/2 R I.F. amp. gain at 470
(P.N.P.) 6 30 75 mw. 25 3 mc/s. Kc/s = 30 db.
V6/4R Frequency changer conver-
(P.N.P.) 6 30 75 mw. 50 5.5 mc/s. sion gain = 27 db.
V6/8R Frequency changer M.W.
(P.N.P.) 6 30 75 mw. 80 10 mc/s. conversion gain = 30 db.
Siemens Edison Swan Ltd.
XA101
(P.N.P.) 16 - 60 mw. 35 5 mc/s.
I.F. amp. gain
Kc/s = 36 db.
at 470
XA102
(P.N.P.) 16 - 60 mw. 60 8 mc/s.
Frequency changer M.W.
conversion gain = 29.5 db.
(P.N.P.) 16 - 90 mw. 30 - A.F. amp. suitable for use
as driver.
XB103
(P.N.P.) 16 - 90 mw. 66 - A.F. amp. suitable for use
as driver.
XB104
(P.N.P.) 16 - 60 mw. 30 - A.F. amp. suitable for use
as driver.
XC101
(P.N.P.) 16 - 100 mw. 66 - Class B push-pull stages
(220 mw.).
XA104
(P.N.P.) 12 - - 18 min. 4 mc/s.
Frequency
R.F. amp.
changer and
XA103
* (P.N.P.) 12 - - 15 min. 2 mc/s. I.F. amplifier.
XB102
(P.N.P.) 16 - 18-47 - A.F. amp. driver or output
stages.
*The three transistors above have been tested by "Bernard's" and recommended to home constructors
who will find their prices very reasonable.
Standard Telephones and Cables Ltd.
TS7
(P.N.P.) 12 - 70 mw. 35 4 me/s.
R.F./I.F. amp. gain at 470
Kc/s of 28 db.
TS8
(P.N.P.) 6 - 70 mw. 65 8.5 me/s.
R.F. amplifier frequency
changer.
TS13
(P.N.P.) 20 - 70 mw. 52 600 Kc/s. High gain audio amplifier.
TS14
(P.N.P.) 20 - 70 mw. 32 500 Kc/s. Medium gain audio ampli-
fier.
TS17
(P.N.P.) 18 - 130 mw. 70 - Push-pull class B audio
amplifiers.
TK2OB
(P.N.P.) 12 - 200 mw. 43 6.3 me/s.
Symetrical R.F./I.F. am-
plifier.
TK25B
(P.N.P.) 6 - 200 mw. 63 11 me/s.
Symmetrical R.F./I.F. am-
plifier.
 86 TRANSISTOR SUPERHET RECEIVERS

AMERICAN TRANSISTORS
Number VC Max. k Max. Alpha cut-off Applications and
Type (volts) (ma) PC Max. Beta Frequency Comments
2N34
(P.N.P.) 25 8 50 mw. 40 600 Kc/s. A.F. amplifier.
2N35
(P.N.P.) 25 8 50 mw. 40 800 Kc/s. A.F. amplifier.
2N36
(P.N.P.) 20 8 - 45 - A.F. amplifier.
2N37
(P.N.P.) 20 8 - 30 - A.F. amplifier.
2N38
(P.N.P.) 20 8 - 15 - A.F. amplifier.
2N38A
(P.N.P.) 20 8 - 18 - A.F. amplifier.
2N41
(P.N.P.)
2N44
25 15 - 40 - A.F. amplifier.
A.F. driver or output am-
(P.N.P.) 30 50 150 mw. 33 1 me/s. plifier.
2N46
(P.N.P.) 25 15 - 40 - Audio amplifier.
2N47
(P.N.P.) 35 20 50 mw. 39 - Audio amplifier.
2N48
(P.N.P.) 35 20 50 mw. 39 - Small signal audio ampli-
fier.
2N49
(P.N.P.)
2N63
35 20 50 mw. 39 - Small signal audio ampli-
fier.
Small signal audio ampli-
(P.N.P.) 22 10 100 mw. 22 600 Kc/s. fier.
2N64 Small signal audio ampli-
(P.N.P.) 15 10 100 mw. 45 800 Kc/s. fier.
2N65
(P.N.P.) 12 10 100 mw. 90 1.2 me/s. High gain audio amplifier.
2N68 Power output amp. for car
(P.N.P.) 25 11 amps. 2 watts 40 400 Kc/s. radio.
2N76
(P.N.P.) 20 10 50 mw. 20 1 me/s. Low gain audio amplifier.
2N77
(P.N.P.) 25 15 35 mw. 55 700 Kc/s High gain audio amplifier.
2N78
(P.N.P.) 15 20 65 mw. 58 4 me/s. R.F. amplifier.
2N79 Small signal audio ampli-
(P.N.P.) 30 50 35 mw. 46 700 Kc/s. fier.
2N80
(P.N.P.) 28 8 50 mw. 80 - High gain audio amplifier.
2N81
(P.N.P.) 20 15 50 mw. 30 - Medium gain audio ampli-
fier.
2N82
(P.N.P.)
2N94
20 15 35 mw. 30 - Small signal audio ampli-
fier.
I.F. amplifier (medium
(N.P.N.) 30 10 50 mw. 30 3.5 me/s. gain).
2N94A
(N.P.N.) 30 10 50 mw. 30 6 me/s. High gain I.F. amplifier.
2NA5 Power output stages, i.e.
(N.P.N.) 25 11 amps. 4 watts 40 400 Kc/s. car radio.
2N101
(P.N.P.) 25 11 amps. 1 watt - - Power output amplifier.
2N102
(N.P.N.) 25 11 amps. 1 watt - - Power output amplifier.
 TRANSISTOR SUPERHET RECEIVERS 87

Number VC Max. lc Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N104 Class A low power output
(P.N.P.) 30 50 150 mw. 40 700 Kc/s. and A.F. stages.
2N105
(P.N.P.) 25 15 50 mw. 55 750 Kc/s. Small signal A.F. amplifier.
2N106
(P.N.P.)
2N107
6 10 - 45 800 Kc/s. Small signal A.F. amplifier.
(P.N.P.) 12 10 50 mw. 20 1 me/s. Small signal A.F. amplifier.
2N108
(P.N.P.) 20 15 50 mw. - - A.F. output stages.
2N109
(P.N.P.)
2N111
12 35 50 mw. 70 - A.F. output stages.
Oscillator in Frequency
(P.N.P.) 6 5 30 mw. 40 3 me/s. changers.
2N111A Oscillator in frequency
(P.N.P.) 6 5 30 mw. 40 3 me/s. changers.
2N112 R.F. or I.F. amplifier
(P.N.P.) 6 5 30 mw. 40 5 me/s. Medium gain.
2N113 Medium gain R.F. am-
(P.N.P.) 6 5 30 mw. 45 10 me/s. plifier.
2N114 High gain R.F. amplifier
(P.N.P.) 6 5 30 mw. 65 20 me/s. (38 db).
2N128 Surface barrier transistor.
(S.b.) 10 5 30 mw. 28 65 me/s. R.F. amplifier.
2N129 R.F. amplifier frequency
(S.B.) 10 5 30 mw. 20 60 me/s. changer or oscillator.
2N130
(P.N.P.) 22 10 100 mw. 22 800 Ke/s. A.F. amplifier low gain.
2N131
(P.N.P.) 15 10 100 mw. 45 800 Kc/s. A.F. amplifier medium gain.
2N132
(P.N.P.) 12 10 100 mw. 90 1 me/s. High gain audio amplifier.
2N133
(P.N.P.) 15 10 100 mw. 25 800 Kc/s. A.F. amplifier.
2N135
(P.N.P.) 20 50 100 mw. 20 4.5 me/s. I.F. amplifier.
2N136
(P.N.P.) 20 50 100 mw. 40 6.5 mc/s. R.F. amplifier.
2N137
(P.N.P.) 10 50 100 mw. 60 10 me/s. R.F. amplifier.
2N138
(P.N.P.) 12 20 50 mw. 140 - A.F. output stages.
2N138A
(P.N.P.)
2N139
30 100 50 mw. 40 - A.F. output stages.
Medium gain I.F. am-
(P.N.P.) 16 15 80 mw. 48 7 me/s. plifier.
2N140
(P.N.P.) 16 15 80 mw. 75 10 me/s. Frequency changer.
2N141 Power output stages (4
(P.N.P.) 30 800 1.5 watts 40 400 Kc/s. watts push-pull).
2N142 Power output stages (4
(N.P.N.) 30 800 1.5 watts 40 400 Kc/s. watts push-pull).
2N143 Power output stages (4
(P.N.P.) 30 800 1.5 watts 40 400 Kc/s. watts push-pull).
2N144 Power output stages (4
(N.P.N.) 30 800 1.5 watts 40 400 Kc/s. watts push-pull).
2N145
(N.P.N.) 20 5 65 mw. - - I.F. amplifier low gain.
 88 TRANSISTOR SUPERHET RECEIVERS

Number VC Max. k Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N146
(N.P.N.) 20 , 5 65 mw. - - Medium gain I.F. amplifier.
2N147
(N.P.N.) 20 5 65 mw. - High gain I.F. amplifier.
2N148
(N.P.N.) 16 5 65 mw. - - Low gain I.F. amplifier.
2N148A
(N.P.N.) 32 5 65 mw. - - Low gain I.F. amplifier.
2N149
(N.P.N.) 16 5 65 mw. - - Medium gain I.F. amplifier.
2N149A
(N.P.N.) 32 5 65 mw. - - Medium gain I.F. amplifier.
2N150
(N.P.N.) 16 5 65 mw. - - High gain I.F. amplifier.
2N150A
(N.P.N.)
2N155
32 5 65 mw. - - High gain I.F. amplifier.
Power output stages 7.5 w.
(P.N.P.) 30 3 amps. 1.5 watts 45 150 Kc/s. max. in push-pull.
2N156 Power output stages 7.5 w.
(P.N.P.) 30 3 amps. 1.5 watts 45 180 Kc/s. max. in push-pull.
2N158 Power output in stages 7.5
(P.N.P.) 60 3 amps. 1.5 watts 41 180 Kc/s. w. max. in push-pull.
2N164A Oscillator in frequency
(N.P.N.) 15 20 65 mw. 40 8 mc/s. changers.
2N165
(N.P.N.) 15 20 65 mw. 72 5 mc/s. I.F. amplifier.
2N166
(N.P.N.) 6 20 25 mw. 32 5 me/s. Low gain I.F. amplifier.
2N168
(N.P.N.) 15 20 55 mw. 20 6 me/s. R.F. amplifier.
2N168A
(N.P.N.) 15 20 65 mw. 40 8 me/s. R.F. amplifier or oscillator.
2N169
(N.P.N.) 15 20 50 mw. 40 4 me/s. Class B detector.
2N169A Detector or reflex I.F.-
(N.P.N.) 25 20 55 mw. 30 5 me/s. A.F. amplifier.
2N170
(N.P.N.) 6 20 25 mw. 20 4 mc/s. R.F. or I.F. amplifier.
2N172
(N.P.N.)
2N173
16 5 65 mw. - - I.F. amplifier or frequency
changer.
Power output stages in car
(P.N.P.) 60 7 amps. 40 watts 100 600 Kc/s. radio, etc.
2N174 Power output stages in car
(P.N.P.) 80 7 amps. 40 watts 45 200 Kc/s. radio, etc.
2N175 Small signal audio ampli-
(P.N.P.) 10 2 20 mw. 65 800 Kc/s. fier.
2N176
(P.N.P.)
2N178
12 600 5 watts - - Power output stages
watts class A).
Power output stages
(3

(3
(P.N.P.) 12 600 10 watts 30 watts class A).
2N179
(P.N.P.)
2N180
20 60 1 watt - - Power output stages (300
mw class A).
A.F. output stages 300 mw
(P.N.P.) 30 25 150 mw. 60 700 Kc/s. class B push-pull.
2N181 A.F. output stage 110 mw.
(P.N.P.) 30 38 250 mw. 60 700 Kc/s. Class A.
2N182 I.F. amplifiers 34 db gain
(N.P.N.) 25 10 100 mw. 25 3.5 mo/s. at 455 kc/s.
 TRANSISTOR SUPERHET RECEIVERS 89

Number VC Max. Ic Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N183
(N.P.N.) 25 10 100 mw. 40 7.5 me/s. I.F. amplifier or oscillator.
2N185
(P.N.P.)
2N186
20 150 150 mw. 55 - Push-pull A.F. output (250
mw).
Push-pull A.F. output 300
(P.N.P.) 25 200 100 mw. 24 800 Kc/s. mw. 28 db gain.
2N186A Push-pull A.F. output 750
(P.N.P.) 25 200 200 mw. 24 800 Kc/s. mw. 30 db gain
2N187 Push-pull A.F. output 300
(P.N.P.) 25 200 100 mw. 36 1 me/s. mw. 30 db gain.
2N187A Push-pull A.F. output 750
(P.N.P.) 25 200 200 mw. 36 1 me/s. mw. 30 db gain.
2N188 Push-pull A.F. output 300
(P.N.P.) 25 200 100 mw. 54 1.2 me/s. mw. 32 db.
2N188A Push-pull A.F. output 750
(P.N.P.) 25 200 200 mw. 54 1.2 me/s. mw. 32 db.
2N189 Small signal audio amplifier.
(P.N.P.) 25 50 75 mw. 24 800 Kc/s. 37 db gain.
2N190 Small signal audio amplifier.
(P.N.P.) 25 50 75 mw. 36 1 me/s. 39 db gain.
2N191 Small signal audio amplifier.
(P.N.P.) 25 50 75 mw. 54 1.2 me/s. 41 db gain.
2N192 Small signal audio amplifier.
(P.N.P.) 25 50 75 mw. 75 1.5 me/s. 43 db gain.
2N193
(N.P.N.) 15 50 50 mw. 6 3 me/s. Local oscillator.
2N194
(N.P.N.) 15 50 50 mw. 7.5 3.5 me/s. Local oscillator.
2N206 High gain small sigual A.F
(P.N.P.) 30 50 75 mw. 47 800 Kc/s. amplifier.
2N207 High gain small signal A.F.
(P.N.P.) 12 20 50 mw. 100 2 me/s. amplifier.
2N207A High gain small signal A.F.
(P.N.P.) 12 20 50 mw. 100 2 me/s. amplifier.
2N207B High gain small signal A.F.
(P.N.P.) 12 20 50 mw. 100 2 me/s. amplifier.
2N211
(N.P.N.) 10 50 50 mw. 30 3.5 me/s. Local oscillator.
2N212
(N.P.N.) 10 50 50 mw. 15 6 me/s. Local oscillator.
2N213
(N.P.N.)
2N214
25 100 50 mw. 150 - High gain A.F. amplifier.
(N.P.N.) 25 75 125 mw. 70 800 Kc/s. Low gain A.F. amplifier.
2N215
(P.N.P.) 30 50 50 mw. 44 700 Kc/s. Small signal A.F. amplifier.
2N216
(N.P.N) 15 50 50 mw. 15 3 me/s. Low gain I.F. amplifier.
26 db.
2N217
(P.N.P.)
2N218
25 70 50 mw. 70 - Small signal A.F. amplifier.
(P.N.P.) 16 15 35 mw. 48 4.7 me/s. I.F. amplifier 30 db gain.
2N219
(P.N.P.) 16 15 80 mw. 75 10 me/s.Frequency changer.
2N220 High gain 43 db small
(P.N.P.) 10 2 20 mw. 65 800 Kc/s. signal A.F. amplifier.
2N223 Small signal A.F. amplifier.
(P.N.P.) 18 150 100 mw. 95 600 Kc/s. 37 db.
 90 TRANSISTOR SUPERHET RECEIVERS

Number VC Max. k Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N224 Push-pull A.F. output
(P.N.P.) 25 150 150 mw. 75 500 Kc/s. stages. 300 mw.
2N225 Push-pull A.F. output
(P.N.P.) 25 150 150 mw. 75 500 Kc/s. stages. 300 mw.
2N226 Push-pull A.F. output
(P.N.P.) 25 150 100 mw. 55 400 Kc/s. stages. 300 mw.
2N227 Push-pull A.F. output
(P.N.P.) 25 150 100 mw. 55 400 Kc/s. stages. 300 mw.
2N228
(N.P.N.)
2N229
25 - 50 mw. 70 800 Kc/s.
Push-pull A.F.
stages. 100 mw.
output

(N.P.N.) 12 40 50 mw. 25 1.6 mc/s. Small signal A.F. stage.

2N230 High power audio output
(P.N.P.) 30 2 amps. 15 watts 83 1 mc/s. stages.
2N233
(N.P.N.) 10 50 50 mw. 4.5 - A.F. amplifier.
2N234
(P.N.P.) 30 3 amps. 25 watts - - Power output stages.
2N34A
(P.N.P.)
2N241
30 3 amps. 25 watts - - Power output stages.
A.F. output stages 35 db
(P.N.P.) 25 100 100 mw. 73 1.3 mc/s. gain at 1 Kc/s.
2N241A A.F. output stages 35 db
(P.N.P.) 25 200 200 mw. 73 1.3 me/s. gain at 1 Kc/s.
2N242 Power output stages 2.5
(P.N.P.) 45 2 amps. 40 200 Kc/s. watts in Class A.
2N247 R.F. amplifier 37 db gain at
(P.N.P.) 35 10 35 mw. 60 30 me/s. 1.5 me/s.
2N249 A.F. output stages 50 mw
(P.N.P.) 25 200 350 mw. 45 Class A.
2N253
(N.P.N.) 12 5 65 mw. - I.F. amplifier 30 db gain.
2N254
(N.P.N.)
2N255
20 5 65 mw. - - I.F. amplifier 34 db gain.
Power output stages 1 watt
(P.N.P.) 15 3 amps. 1.5 watts 40 200 Kc/s. Class A.
2N256 Power output stages 2 watts
(P.N.P.) 30 3 amps. 1.5 watts 40 200 Kc/s. Class A.
2N265 High gain A.F. amplifier
(P.N.P.) 25 5 oma 75 mw. 110 1.5 me/s. 45 db.
2N267 High gain A.F. amplifier
(P.N.P.) 25 5 oma 75 mw. 110 1.5 me/s. 45 db.
2N270 500 mw. push-pull output
(P.N.P.) 25 150 150 mw. 70 stages.
2N274
(P.N.P.) 40 10 35 mw. 60 30 mc/s. High gain R.F. amplifier.
2N291
(P.N.P.)
2N292
25 200 180 mw. 45 - A.F. amplifier 33 db gain.
I.F. amplifier max. gain 35
(N.P.N.) 15 20 65 mw. 25 6 me/s. db.
2N293 R.F. amplifier and con-
(N.P.N.) 15 20 65 mw. 25 7 me/s. verter.
2N306
(N.P.N.)
2N307
12 - 50 mw. 30 750 Kc/s. Small signal audio amplifier.
(P.N.P.) 35 1 amp. 25 200 Kc/s. Output stages.
2N307A
(P.N.P.) 35 2 amps. 17 watts. 20 100 Kc/s. Power output stages.
 TRANSISTOR SUPERHET RECEIVERS 91

Number VC Max. lc Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N30$
(P.N.P.) 20 5 30 mw. - - I.F. amplifier 41 db gain.
2N310
(P.N. P.)
2N319
30 5 30 mw. - - Reflex I.F./A.F. amplifier.
A.F. output stages 30 db
(P.N.P.) 20 200 240 mw. 33 2 mc/s. gain.
2N320 A.F.output stages 32 db
(P.N.P.) 20 200 240 mw. 48 2.5 me/s. gain.
2N321 A.F. output stages 35 db
(P.N.P.) 20 200 240 mw. 48 3 mc/s. gain.
2N322 High gain A.F. amplifier.
(P.N.P.) 16 100 140 mw. 70 2 mc/s. db.
2N323 High gain A.F. amplifier.
(P.N.P.) 16 100 140 mw. 90 2.5 me/s. 41 db.
2N324 High gain A.F. amplifier.
(P.N.P.) 16 100 140 mw. 80 3 me/s. 43 db.
2N325
(P.N.P.) 35 2 amps. 12 watts 40 200 Kc/s. High power transistor.
2N328 Medium gain A.F. tran-
(P.N.P.) 35 100 335 mw. 24 350 Kc/s. sistor. 34 db.
2N329 Medium gain A.F. tran-
(P.N.P.) 30 100 335 mw. 50 500 Kc/s. sistor. 36 db.
2N330 Low gain A.F. amplifier.
(P.N.P.) 45 50 - 335 mw. 30 250 Kc/s. 34 db.
2N331 High gain, A.F. amplifier.
(P.N.P.) 30 10 200 mw. 48 700 Kc/s. 44.5 db.
2N344 R.F. amp. surface barrier
(P.N.P.) 5 5 20 mw. 22 50 me/s. type.
2N345 R.F. amp. surface barrier
(N.P.N.) 5 5 20 mw. 15 75 me/s. type.
2N346 R.F. amp. surface barrier
(P.N.P.) 5 5 20 mw. 60 50 me/s. type.
2N381 Push-pull output stages. 25
(P.N.P.) 25 200 200 mw. 50 1.2 me/s. db gain.
2N382
(P.N.P.) 25 200 200 mw.Push-pull
75 1-5 me/s. db gain.
output stages. 33
2N383
(P.N.P.)
2N384
25 200 200 mw.Push-pull
100 1.8 me/s. db.
output stages. 31
V.H.F. amp. 10.7 me/s. I.F.
(P.N.P.) 30 10 120 mw. 65 100 me/s. amplifier.
2N386 High power amp. suitable
(P.N.P.) 60 3 amps. 12.5 watts 100 700 Kc/s. car radio.
2N387 High power amp. suitable
(P.N.P.) 80 3 amps. 12.5 watts 100 600 Kc/s. car radio.
2N402
(P.N.P.) 20 150 180 mw. 24 600 Kc/s. A.F. amplifier 37 db gain.
2N403 .utput stages 32 db
(P.N.P.) 20 200 180 mw. 32 850 Kc/s. ClassAudioAo
2N405 High gain audio amplifier.
(P.N.P.) 18 35 150 mw. 35 650 Kc/s. 43 db.
2N406 18 35 150 mw. 35 650 Kc/s. 43 db.
(P.N.P.) High gain audio amplifier.
2N407
(P.N.P.) 18 70 150 mw. 65 - Push-pull
160 mw.
output stages.
2N408
(P.N.P.)
2N409
18 70 150 mw. 65 - Push-pull
160 mw.
output stages.

(P.N.P.) 13 15 80 mw. 45 7 me/s. I.F. amplifier 39 db gain.

 92 TRANSISTOR SUPERHET RECEIVERS

Number VC Max. lc Max. Alpha cut-off Application and

Type (volts) (ma) PC Max. Beta Frequency Comments
2N410
(P.N.P.) 13 15 80 mw. 45 7 mc/s. I.F. amplifier 39 db gain.
2N411
(P. N. P.) 13 15 80 mw. 75 10 mc/s. R.F. amplifier or converter.
2N412
(P.N.P.) 13 145 80 mw. 75 10 mc/s. R.F. amplifier or converter.
2N413
(P. N. P.) 18 200 150 mw. 30 2.5 me/s. Low gain R.F. amplifier.
2N413A
(P.N.P.) 15 200 150 mw. 30 2.5 me/s. I.F. amplifier 33 db.
2N414
(P.N.P.) 15 200 150 mw. 60 7 me/s. Low gain R.F. amplifier.
2N414A
(P.N.P.) 15 200 150 mw. 60 7 me/s. I.F. amplifier 35 db gain.
2N415
(P.N.P.) 10 200 150 mw. 80 10 me/s. R.F. or I.F. amplifier.
2N415A
(P.N.P.) 10 200 150 mw. 80 10 me/s. I.F. amplifier. 30 db gain.
2N416
(P.N.P.) 12 200 150 mw. 80 10 me/s. R.F. amplifier. 20 db gain.
2N417
(P.N.P.) 10 200 150 mw. 140 20 me/s. High gain R.F. amplifier.
2N422
(P.N.P.) 20 100 150 mw. 50 800 Kc/s. High gain audio amp. 38 db.
2N461 Audio amplifier suitable for
(P.N.P.) 45 400 200 mw. 50 1.2 me/s. output stages.
2N464 High gain audio amplifier
(P.N.P.) 40 100 150 mw. 26 700 Kc/s. 40 db.
2N465 High gain audio amplifier
(P.N.P.) 30 100 150 mw. 45 800 Kc/s. 42 db.
2N466 High gain audio amplifier
(P.N.P.) 20 100 150 mw. 90 1 me/s. 44 db.
2N467 High gain audio amplifier
(P.N.P.) 15 100 150 mw. 180 1.2 me/s. 45 db.
2N508 High gain audio amplifier
(P.N.P.) 16 100 140 mw. 125 3.5 me/s. 45 db.
2N524
(P.N.P.) 30 500 225 mw. 30 2 me/s. A.F. amplifier.
2N525 A.F. amplifier suitable for
(P.N.P.) 30 500 225 mw. 44 2.5 me/s. output stages.
2N526 A.F. amplifier suitable for
(P.N.P.) 30 500 225 mw. 64 3 me/s. output stages.

Ask for Bernards latest 24 page catalogue at your

local dealer's, or write to :-

Bernards (Publishers) Ltd.

The Grampians, Western Gate, London, W.6.
Tel: SHEpherds Bush 2581 & 4794
 BERNARDS RADIO BOOKS
No.
35. Dictionary of Mathematical Data 2/-
56. Radio Aerial Handbook ... 216
57. Ultra -Shortwave Handbook 2/6
58. Radio Hints Manual 2/6
64. Sound Equipment Manual 2/6
65. Radio Designs Manual ... 2/6
68. Frequency Modulation Receivers' Manual 2/6
73. Radio Test Equipment Manual ... 2/6
83. Radio Instruments and their Construction 2/6
86. Midget Radio Construction 3/6
96. Crystal Set Construction ... 1/-
99. One Valve Receivers 1/6
100. A Comprehensive Radio Valve Guide Book 1 - 5/-
101. Two Valve Receivers 1/6
102. 40 Circuits Using Germanium Diodes ... ... ... ... ... 3/-
103. Radiofolder A. The Master Colour Code Index for Radio and Television 1/6
104. Three Valve Receivers ... 1/6
107. Four Valve Receivers ... ... ... 1/6
121. A Comprehensive Radio Valve Guide Book 2 5/-
123. Radiofolder F. The Beginners' Push -Pull Amplifier 1/6
126. Boys' Book of Crystal Sets and Simple Circuits 2/6
127. Wireless Amplifier Manual No. 3 3/6
129. Universal Gram -Motor Speed Indicator 1/-
132. Reactance -"Frequency Chart for Designers and Constructors 1/6
135. All Dry Battery Portable Construction ... . 2/6
138. How to Make F.M. and T.V. Aerials, Bands 1, 2 and 3 ... 2/6
141. Radio Servicing for Amateurs ... ... ... ... 3/6
142. Modern T.V. Circuits and General Faultfinding Guide 4/6.
143. A Comprehensive Radio Valve Guide Book 3 ... 5/-
145. Handbook of AM/FM Circuits and Components ... 2/-
146. High Fidelity Loudspeaker Enclosures ... 5/-7 .

147. Practical Tape Recording Handbook ... 5/- '

148. Practical Transistor Receivers ... 5/-
149. Practical Stereo Handbook ... 3/6
150. Practical Radio Inside Out ... 3/6
151. Transistor Superhet Receivers ... ... 7/6
152. Transistorised Car Radio for the Home Constructor 2/-
155. Portable Transistor Radio and Radiogram ... 2/6
156. Transistor Circuits Manual No. 1 ... ... 2/6
157. A Comprehensive Radio Valve Guide Book 4 ... ... ... ... ... 5/-
158. Radio, Television, Industrial Tube, Semiconductor and Diode Equivalents Hand-
book (203 pages) ... ... ... 9/6
159. Realistic High Fidelity ... ... ... 5/-
160. Coil Design and Construction Manual ... ... 5/-
161. Radio, Television and Electronics Data Book ... ... ... 3/6
162. High Fidelity Stereo Gramophone for the Home Constructor 5/-
163. Transistor Circuits Manual No. 2 ... ... ... 2/6
164. High Fidelity Tape Recorder for the Home Constructor ... 2/6
165. Hartley on Hi-Fi. Book 1. - Radio Tuners ... ... ... 5/-
166. Public Address Systems ... ... ... 2/6
167. Transistor Circuits Manual No. 3 ... 2/6
168. Transistor Circuits Manual No. 4 ... ... ... ... 2/6
169. Hi-Fi Transistor F.M. Tuner for the H ome Constructor ... 3/6
Resistor Colour Code Disc Calculator ... 1/6
Engineers' Reference Tables ... ... ... ... 1/6
International Radio Tube Encyclopaedia -3rd edition 63/-