MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

A
X B
C 1. V UPC 14. V NI
D 2. U FO 15. B R
Q P 3. U P 16. U N
S T P P 4. V UPI 17. V N
5. V VPC 18. WN
1234 5678 9 11 13 15 17 19 6. V FO 19. FO
7. V P 20. P
Y (15 TYP.) 10 12 14 16 18
8. V VPI 21. B
F H G 9. V WPC 22. N
U (4 TYP.)
10. WFO 23. U
P B N U V W 11. WP 24. V
12. V WPI 25. W
N M M M M M Z 13. V NC
V - DIA.
(4 TYP.) E Description:
Mitsubishi Intelligent Power Mod-
2.0 ± 0.1 X 0.5 ± 0.1 MM PIN
(6 TYP.)
ules are isolated base modules de-
signed for power switching applica-
0.6 ± 0.1 X 0.4 ± 0.1 MM PIN J
(19 TYP.)
tions operating at frequencies to
AA K
W 20kHz. Built-in control circuits pro-
L vide optimum gate drive and pro-
R
tection for the IGBT and free-wheel
diode power devices.
V WPC

V UPC
V VPC
V WPI

V UPI
W FO

V VPI

U FO
V NC

V FO
WP
WN

V NI

UP
UN

VP
BR

VN
FO

Features:
u Complete Output Power
Circuit
u Gate Drive Circuit
OUT V CC

OUT V CC

OUT V CC

OUT V CC

OUT V CC

OUT V CC

OUT V CC
GND GND

GND GND

GND GND

GND GND

GND GND

GND GND

GND GND
FO

FO

FO

FO

FO

FO

FO
IN

IN

IN

IN

IN

IN

IN

TEMP
SI

SI

SI

SI

SI

SI

SI

u Protection Logic
– Short Circuit
– Over Current
– Over Temperature
B N W V U P – Under Voltage

Applications:
Outline Drawing and Circuit Diagram
u Inverters
Dimensions Inches Millimeters Dimensions Inches Millimeters u UPS
A 3.98±0.04 101.0±1.0 N 0.41 10.5 u Motion/Servo Control
B 3.78 96.0 P 0.400 10.16
u Power Supplies
C 3.48±0.03 88.5±0.8 Q 0.392 9.96
Ordering Information:
D 2.700±0.03 68.58±0.8 R 0.31 8.0 Example: Select the complete
E 2.66±0.02 67.5±0.5 S 0.26 6.5 part number from the table below
F 2.36±0.04 60.0±1.0 T 0.246 6.25 -i.e. PM15RSH120 is a 1200V,
G 1.85±0.02 47.0±0.5 U 0.18 Rad. Rad. 4.5 15 Ampere Intelligent Power Mod-
H 1.83±0.03 46.5±0.8 V 0.18 Dia. Dia. 4.5
ule.
J 1.28 32.6 W 0.17±0.02 4.4±0.5 Type Current Rating VCES
Amperes Volts (x 10)
K 0.97 24.6 X 0.10 2.5
PM 15 120
L 0.71±0.04 18.0±1.0 Y 0.100±0.01 2.54±0.25
M 0.53±0.01 13.5±0.3 Z 0.02 0.5
AA 0.14 3.5

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Absolute Maximum Ratings, Tj = 25°C unless otherwise specified

Ratings Symbol PM15RSH120 Units
Power Device Junction Temperature Tj -20 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Case Operating Temperature TC -20 to 100 °C
Mounting Torque, M4 Mounting Screws — 0.98 ~ 1.47 N·m
Module Weight (Typical) — 100 Grams
Supply Voltage Protected by OC and SC (VD = 13.5 - 16.5V, Inverter Part, Tj = 125°C) VCC(prot.) 800 Volts
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Viso 2500 Vrms

Control Sector
Supply Voltage (Applied between VUP1-VUPC, VVP1-VVPC, VWP1-VWPC, VN1-VNC) VD 20 Volts
Input Voltage (Applied between UP-VUPC, VP-VVPC, WP-VWPC, UN · VN · WN · Br-VNC) VCIN 20 Volts
Fault Output Supply Voltage Applied between (UFO-VUPC, VFO-VVPC, WFO-VWPC, FO-VNC) VFO 20 Volts
Fault Output Current (Sink Current at UFO, VFO, WFO and FO Terminal) IFO 20 mA

IGBT Inverter Sector

Collector-Emitter Voltage (VD = 15V, VCIN = 15V) VCES 1200 Volts
Collector Current, (TC = 25°C) IC 15 Amperes
Peak Collector Current, (TC = 25°C) ICP 30 Amperes
Supply Voltage (Applied between P - N) VCC 900 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation PC 83 Watts

Brake Sector
Collector-Emitter Voltage VCES 1200 Volts
Collector Current, (TC = 25°C) IC 10 Amperes
Peak Collector Current, (TC = 25°C) ICP 20 Amperes
Supply Voltage (Applied between P - N) VCC 900 Volts
Supply Voltage, Surge (Applied between P - N) VCC(surge) 1000 Volts
Collector Dissipation PC 41 Watts
Diode Forward Current IF 10 Amperes
Diode DC Reverse Voltage VR(DC) 1200 Volts

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Control Sector
Over Current Trip Level Inverter Part OC -20°C ≤ T ≤ 125°C, VD = 15V 22 37 — Amperes
Over Current Trip Level Brake Part 15 27 — Amperes
Short Circuit Trip Level Inverter Part SC -20°C ≤ T ≤ 125°C, VD = 15V — 56 — Amperes
Short Circuit Trip Level Brake Part — 41 — Amperes
Over Current Delay Time toff(OC) VD = 15V — 10 — µs
Over Temperature Protection OT Trip Level 100 110 120 °C
OTr Reset Level — 90 — °C
Supply Circuit Under Voltage Protection UV Trip Level 11.5 12.0 12.5 Volts
UVr Reset Level — 12.5 — Volts
Supply Voltage VD Applied between VUP1-VUPC, 13.5 15 16.5 Volts
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Circuit Current ID VD = 15V, VCIN = 15V, VN1-VNC — 25 35 mA
VD = 15V, VCIN = 15V, VXP1-VXPC — 7 10 mA
Input ON Threshold Voltage Vth(on) Applied between 1.2 1.5 1.8 Volts
Input OFF Threshold Voltage Vth(off) UP-VUPC, VP-VVPC, WP-VWPC, 1.7 2.0 2.3 Volts
UN · VN · WN · Br-VNC
PWM Input Frequency fPWM 3-φ Sinusoidal — 15 20 kHz
Fault Output Current IFO(H) VD = 15V, VFO = 15V — — 0.01 mA
IFO(L) VD = 15V, VFO = 15V — 10 15 mA
Minimum Fault Output Pulse Width tFO VD = 15V 1.0 1.8 — ms

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specified

Characteristics Symbol Test Conditions Min. Typ. Max. Units

IGBT Inverter Sector

Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1.0 mA
VCE = VCES, Tj = 125°C — — 10 mA
Emitter-Collector Voltage VEC -IC = 15A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 15A — 2.3 3.3 Volts
VD = 15V, VCIN = 0V, IC = 15A, — 2.1 3.1 Volts
Tj = 125°C
Inductive Load Switching Times ton 0.4 0.7 1.5 µs
trr VD = 15V, VCIN = 0 ↔ 15V — 0.15 0.3 µs
tC(on) VCC = 600V, IC = 15A — 0.3 1.0 µs
toff Tj = 125°C — 1.7 2.9 µs
tC(off) — 0.7 1.3 µs

Brake Sector
Collector-Emitter Saturation Voltage VCE(sat) VD = 15V, VCIN = 0V, IC = 10A, — 2.8 3.8 Volts
Tj = 25°C
VD = 15V, VCIN = 0V, IC = 10A, — 2.5 3.5 Volts
Tj = 125°C
Diode Forward Voltage VFM IF = 10A, VD = 15V, VCIN = 5V — 2.5 3.5 Volts
Collector Cutoff Current ICES VCE = VCES, Tj = 25°C — — 1 mA
VCE = VCES, Tj = 125°C — — 10 mA

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Thermal Characteristics
Characteristic Symbol Condition Min. Typ. Max. Units
Junction to Case Thermal Resistance Rth(j-c)Q Each Inverter IGBT — — 1.5 °C/Watt
Rth(j-c)F Each Inverter FWDi — — 4.5 °C/Watt
Rth(c-f)Q Each Brake IGBT — — 3.0 °C/Watt
Rth(c-f)F Each Brake FWDi — — 5.5 °C/Watt
Contact Thermal Resistance Rth(c-f) Case to Fin Per Module, — — 0.044 °C/Watt
Thermal Grease Applied

Recommended Conditions for Use

Characteristic Symbol Condition Value Units
Supply Voltage VCC Applied across P-N Terminals 0 ~ 800 Volts
VD Applied between VUP1-VUPC, 15 ± 1.5 Volts
VN1-VNC, VVP1-VVPC, VWP1-VWPC
Input ON Voltage VCIN(on) Applied between 0 ~ 0.8 Volts
Input OFF Voltage VCIN(off) UP, VP, WP, UN, VN, WN, Br 4.0 ~ VD Volts
PWM Input Frequency fPWM Using Application Circuit 5 ~ 20 kHz
Minimum Dead Time tdead Input Signal ≥ 2.5 µs

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Inverter Part

SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS

CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL)

3.0 3.0 20
Tj = 25oC VD = 17V
COLLECTOR-EMITTER SATURATION VOLTAGE

VCIN = 0V 15
SATURATION VOLTAGE VCE(sat), (VOLTS)

COLLECTOR CURRENT, IC, (AMPERES)

2.5 2.5
13

2.0 2.0
VCE(sat), (VOLTS)

1.5 1.5 10

1.0 1.0
IC = 15A
VD = 15V
VCIN = 0V
0.5 VCIN = 0V 0.5
Tj = 25oC Tj = 25oC
Tj = 125oC Tj = 125oC
0 0 0
0 5 10 15 20 25 0 12 14 16 18 20 0 1.0 2.0 3.0
COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

SWITCHING TIME VS. SWITCHING TIME VS. REVERSE RECOVERY CURRENT VS.
COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT (TYPICAL)

101 101 103 102

VCC = 600V VCC = 600V VCC = 600V

REVERSE RECOVERY CURRENT, Irr, (AMPERES)

VD = 15V VD = 15V VD = 15V
Inductive Load Inductive Load Inductive Load
REVERSE RECOVERY TIME, trr, (µs)
SWITCHING TIMES, tc(on), tc(off), (µs)

Tj = 25oC Tj = 25oC Tj = 25oC

SWITCHING TIMES, ton, toff, (µs)

Tj = 125oC Tj = 125oC Tj = 125oC

toff
trr
100 100 102 101
ton tc(off)
Irr
tc(on)

10-1 10-1 101 100

100 101 102 100 101 102 100 101 102
COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

OVER CURRENT TRIP LEVEL VS. OVER CURRENT TRIP LEVEL VS.
DIODE FORWARD CHARACTERISTICS SUPPLY VOLTAGE (TYPICAL) TEMPERATURE (TYPICAL)

102 140 120

COLLECTOR REVERSE CURRENT, -IC, (AMPERES)

VD = 15V Tj = 25oC VD = 15V

OVER CURRENT TRIP LEVEL % (NORMALIZED)

OVER CURRENT TRIP LEVEL % (NORMALIZED)

VCIN = 15V
Tj = 25oC 120 110
Tj = 125oC

100 100

101
80 90

60 80

100 0 0
0 1 2 3 0 12 14 16 18 20 -20 0 20 60 100 140
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) SUPPLY VOLTAGE, VD, (VOLTS) JUNCTION TEMPERATURE, Tj, (oC)

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Inverter Part

CONTROL SUPPLY VOLTAGE TRIP-RESET TRANSIENT THERMAL

FAULT OUTPUT PULSE WIDTH VS. LEVEL TEMPERATURE DEPENDENCY IMPEDANCE CHARACTERISTICS
TEMPERATURE (TYPICAL) (TYPICAL) (Each IGBT)

TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

2.5 15 101
VD = 15V UVt
UVr
FAULT OUTPUT PULSE WIDTH, tfo, (ms)

14
2.0 100
UV TRIP-RESET LEVEL,
UVt, UVr, (VOLTS)

13
1.5 10-1
12

1.0 10-2
11
SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 1.5oC/W

0 0 10-3 10-3
-50 0 50 100 150 -50 0 50 100 150 10-3 10-2 10-1 100 101
JUNCTION TEMPERATURE, Tj, (oC) JUNCTION TEMPERATURE, Tj, (oC) TIME, (s)

TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

101

100

10-1

10-2
SINGLE PULSE
STANDARD VALUE = Rth(j-c)F = 4.5oC/W

10-3
10-3 10-2 10-1 100 101
TIME, (s)

Sep.1998
 MITSUBISHI INTELLIGENT POWER MODULES

PM15RSH120
FLAT-BASE TYPE
INSULATED PACKAGE

Brake Part

SATURATION VOLTAGE COLLECTOR-EMITTER SATURATION OUTPUT CHARACTERISTICS

CHARACTERISTICS (TYPICAL) VOLTAGE CHARACTERISTICS (TYPICAL) (TYPICAL)

5 5 10
Tj = 25oC VD = 17V 15
COLLECTOR-EMITTER SATURATION VOLTAGE
SATURATION VOLTAGE, VCE(sat), (VOLTS)

VCIN = 0V

COLLECTOR CURRENT, IC, (AMPERES)

4 4 13
8
VCE(sat), (VOLTS)

3 3 6

2 2 4

VD = 15V
1 VCIN = 0V 1 Tj = 25oC 2
Tj = 25oC VCIN = 0V
Tj = 125oC IC = 10A
0 0 0
0 2 4 6 8 10 0 12 14 16 18 20 0 1 2 3 4
COLLECTOR CURRENT, IC, (AMPERES) SUPPLY VOLTAGE, VD, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

TRANSIENT THERMAL TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS IMPEDANCE CHARACTERISTICS
DIODE FORWARD CHARACTERISTICS (Each IGBT) (Each FWDi)
TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

TRANSIENT IMPEDANCE, Zth(j-c), (NORMALIZED VALUE)

102 101 101

VD = 15V
DIODE FORWARD CURRENT, IF, (AMPERES)

VCIN = 15V
Tj = 25oC
Tj = 125oC 100 100

101 10-1 10-1

10-2 10-2
SINGLE PULSE SINGLE PULSE
STANDARD VALUE = Rth(j-c)Q = 3.0oC/W STANDARD VALUE = Rth(j-c)F = 5.5oC/W
100 10-3 10-3
0 0.5 1.0 1.5 2.0 2.5 3.0 10-3 10-2 10-1 100 101 10-3 10-2 10-1 100 101
DIODE FORWARD VOLTAGE, VF, (VOLTS) TIME, (s) TIME, (s)

Sep.1998