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2sa1213 Galaxy

2sa1213
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0% found this document useful (0 votes)
25 views5 pages

2sa1213 Galaxy

2sa1213
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1213

FEATURES
Pb
z Low saturation voltage
Lead-free
z High speed switching time
z Small flat package
z PC=1.0 to 2.0W(mounted on ceramic substrate)
z Complementary to 2SC2873

SOT-89

ORDERING INFORMATION
Type No. Marking Package Code

2SA1213 NO/NY SOT-89

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -2 A
IB Base Current -0.4 A
500
PC Collector Dissipation mW
1000(Note)
Tj,Tstg Junction and Storage Temperature -55~150 ℃
Note1:Mounted on ceramic substrate(250mm2*0.8t)

Document number: BL/SSSTG040 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1213

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified


Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-emitter breakdown voltage V(BR)CEO IC=-10mA,IB=0 -50 V

Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 μA

Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA

VCE=-2V,IC=-0.5A 70 240
DC current gain hFE
VCE=-2V,IC=-2.0A 20

Collector-emitter saturation voltage VCE(sat) IC=-1A,IB=-0.05A -0.5 V

Base-emitter saturation voltage VBE(sat) IC=-1A,IB=-0.05A -0.5 -1.2 V

Transition frequency fT VCE=-2V, IC=-0.5A 120 MHz

Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 40 pF

CLASSIFICATION OF hFE
Rank O Y

Range 70-140 120-240

Marking NO NY

Document number: BL/SSSTG040 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1213

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

PACKAGE OUTLINE

Document number: BL/SSSTG040 www.galaxycn.com


Rev.A 3
BL Galaxy Electrical Production specification

Silicon Planar Epitaxial Transistor 2SA1213

Plastic surface mounted package SOT-89

SOT-89
Dim Min Max
A 4.5 4.7
B 2.3 2.7
C 1.5Typical
D 0.35 0.55
E 1.4 1.6
F 0.4 0.6
H 1.55 1.75
J 0.4Typical
K 4.15 4.25
All Dimensions in mm

SOLDERING FOOTPRINT

Unit:mm

PACKAGE INFORMATION
Device Package Shipping

2SA1213 SOT-89 1000/Tape&Reel

Document number: BL/SSSTG040 www.galaxycn.com


Rev.A 4
www.s-manuals.com

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