PNP Silicon AF Transistor BCP 69
● For general AF application
● High collector current
● High current gain
● Low collector-emitter saturation voltage
● Complementary type: BCP 68 (NPN)
Type Marking Ordering Code Pin Configuration Package1)
(tape and reel) 1 2 3 4
BCP 69 BCP 69 Q62702-C2130 B C E C SOT-223
BCP 69-10 BCP 69-10 Q62702-C2131
BCP 69-16 BCP 69-16 Q62702-C2132
BCP 69-25 BCP 69-25 Q62702-C2133
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage VCE0 20 V
VCES 25
Collector-base voltage VCB0 25
Emitter-base voltage VEB0 5
Collector current IC 1 A
Peak collector current ICM 2
Base current IB 100 mA
Peak base current IBM 200
Total power dissipation, TS = 124 ˚C2) Ptot 1.5 W
Junction temperature Tj 150 ˚C
Storage temperature range Tstg – 65 … + 150
Thermal Resistance
Junction - ambient2) Rth JA ≤ 72 K/W
Junction - soldering point Rth JS ≤ 17
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group 1 01.97
BCP 69
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol Values Unit
min. typ. max.
DC characteristics
Collector-emitter breakdown voltage V(BR)CE0 20 – – V
IC = 30 mA, IB = 0
Collector-emitter breakdown voltage V(BR)CES 25 – –
IC = 10 µA, VBE = 0
Collector-base breakdown voltage V(BR)CB0 25 – –
IC = 10 µA, IB = 0
Emitter-base breakdown voltage V(BR)EB0 5 – –
IE = 10 µA, IB = 0
Collector-base cutoff current ICB0
VCB = 25 V – – 100 nA
VCB = 25 V, TA = 150 ˚C – – 100 µA
Emitter-base cutoff current IEB0 – – 100 nA
VEB = 5 V, IC = 0
DC current gain1) hFE –
IC = 5 mA, VCE = 10 V 50 – –
IC = 500 mA, VCE = 1 V BCP 69 85 – 375
BCP 69-10 85 100 160
BCP 69-16 100 160 250
BCP 69-25 160 250 375
IC = 1 A, VCE = 1 V 60 – –
Collector-emitter saturation voltage1) VCEsat – – 0.5 V
IC = 1 A, IB = 100 mA
Base-emitter voltage1) VBE
IC = 5 mA, VCE = 10 V – 0.6 –
IC = 1 A, VCE = 1 V – – 1
AC characteristics
Transition frequency fT – 100 – MHz
IC = 100 mA, VCE = 5 V, f = 100 MHz
1) Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2
BCP 69
Total power dissipation Ptot = f (TA*; TS) Transition frequency fT = f (IC)
* Package mounted on epoxy VCE = 5 V, f = 100 MHz
Collector cutoff current ICB0 = f (TA) DC current gain hFE = f (IC)
VCB = 25 V VCB = 1 V
Semiconductor Group 3
BCP 69
Collector-emitter saturation voltage Base-emitter saturation voltage
IC = f (VCEsat) IC = f (VBEsat)
hFE = 10 hFE = 10
Permissible pulse load Ptot max/Ptot DC = f (tp)
Semiconductor Group 4
