IMAPS 2021 - 54th International Symposium on Microelectronics | October 11-14, 2021 | San Diego, CA USA

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Photonic Debonding for Wafer-Level Packaging

Vikram Turkani*1, Vahid Akhavan1, Kurt Schroder1, Xiao Liu2, Luke Prenger2, and Xavier Martinez2
1
NovaCentrix, 2Brewer Science, Inc.
1
400 Parker Dr, Ste 1110, Austin, Texas, USA
2
2401 Brewer Driver, Rolla, MO 65401, USA
*Corresponding Author’s Email: [email protected]

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Abstract
Temporary bonding and debonding (TB/DB) processes have emerged as promising solutions in wafer-level
packaging technology. These processes offer a pathway to wafer thinning and subsequent backside
processing, which are crucial in enabling heterogenous integration using technologies such as 3D through-
silicon-vias (TSVs) and fan-out wafer-level packaging. These are critical for overall device miniaturization
and increased performance. In this work, a novel photonic debonding (PDB) method and the corresponding
bonding material are presented. PDB enhances the TB/DB process by overcoming many of the disadvantages
associated with traditional debonding methods. PDB uses pulsed broadband light (200 nm – 1100 nm) from
flashlamps to debond temporarily bonded wafer pairs with glass as the carrier wafer. These flashlamps
generate high-intensity pulses of light (up to 45 kW/cm2) over short time intervals (~100 µs) to facilitate the
debonding. Feasibility of the PDB in the TB/DB process is demonstrated by successfully debonding thinned
(<70 μm) silicon wafers from glass carriers. Post-debond cleaning of the thinned wafers and carriers is
evaluated. With uniform, large-area illumination (75 mm x 150 mm) per flashlamp and with the ability to
concatenate lamps to increase the illumination area of the PDB tool, the PDB method offers a high-throughput
and low-cost debonding solution for both wafer-level and panel-level packaging technologies.

Key words
Photonic Lift-off, Flashlamp, Temporary Bonding and Debonding, Temporary Bonding Material, Wafer-
level Packaging.

I. Introduction debonding. Wafer debonding is the process of separating the

Over the decades, three-dimensional (3D) chip technologies thinned, already processed Si wafer from the carrier so that
are gaining importance in the microelectronics industry the processed wafer can progress to its intended application
because they enable short circuit paths, high-speed [4]. This makes wafer debonding an important processing
performance, low power consumption and heat dissipation in step in fabricating 3D ICs.
integrated circuits (ICs) [1]. These technologies involve Many existing techniques for debonding the thinned wafer
heterogeneously stacking several thinned silicon dies include: (a) using chemical solvents to dissolve the adhesive
(< 100 µm thick) and interconnecting them vertically to form between the silicon wafer and a perforated carrier, (b)
a three-dimensional (3D) IC [2]. Through-silicon vias heating the adhesive between the silicon wafer and the
(TSVs), instead of classical wire-bonding techniques, may carrier so it may loosen to the point where the silicon wafer
be utilized to vertically interconnect between the silicon can be separated by shearing, or (c) using mechanical means
wafers in modern 3D ICs. Thinned wafers further enable to peel the silicon wafer off the substrate [4-6]. However, in
facile creation of these TSV [3, 4]. order to prevent any damage to the surface structure of the
In order to facilitate processing of thin Si wafers, the wafers thinned wafers, room-temperature and low-stress debonding
are temporarily bonded to a rigid carrier prior to thinning. techniques are preferred. Use of harsh chemicals is also not
Existing approaches for bonding a Si wafer to a carrier desirable.
require the use of an adhesive placed between the device Laser assisted wafer debonding techniques have become
facing side of the Si wafer and the carrier. Upon performing increasingly attractive due to their ability to debond the
back grinding and all the required backside processing, the wafer at room temperature [7]. Short-pulsed lasers operating
thinned wafer and the carrier stack is prepared for wafer in either the ultra-violet [8] or infrared bands [9] have

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demonstrated the ability to debond the thinned wafer from a

transparent carrier. This technique relies upon conversion of
optical energy from the laser by a laser release layer or a laser
sensitive adhesive resulting in photo-chemical or/and photo-
thermal breakdown of the polymer at the interface to
promote adhesion loss at the adhesive-carrier interface.
However, laser debonding presents throughput challenges
due to laser beam area limitations, especially when
processing a larger wafers or panels. This establishes the
need for an alternative room-temperature, low-stress, and

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high-throughput debonding technique.
In this work, a non-laser, photonic debonding (PDB) method
for the temporary bonding and debonding (TBDB) process is
Figure 1. Melt viscosity profile of Material A
presented. Characteristics of the compatible bonding
adhesive, along with the material stack of the bonded wafer
diameter flashlamp and was capable of emitting broadband
pair will be discussed. The PDB process uses broadband
light (200 nm – 1100 nm) with peak radiant intensity as high
light emitting flashlamps to debond thinned Si wafers (70
as 45 kW/cm2.
µm) from glass carriers in less than a millisecond. The
thermal response in the material stack during the PDB
Table 1. Process Parameters of Material A
process is modeled using SimPulse® software. The post-
Spin Bake Bond
debond cleaning process is also evaluated. Finally, a Material
Conditions Conditions Conditions
comparison between PDB and existing debonding methods 1000 rpm 60°C, 5 min 220°C
is made to demonstrate PDB as a clean, low-stress, low-cost, A 3000 rpm/s 160°C, 5 min 2000 N
and high-throughput debonding option. 30 s 220°C, 5 min 3 min

II. Experimental A more thorough explanation on the working principle

behind the tool can be found in an earlier report published by
A. Bonding Adhesive Schroder et. al [10]. This tool, which consists of a single
A bonding adhesive (Material A), developed by Brewer lamp, has an irradiation area of 75 mm x 150 mm when
Science Inc., was chosen to be evaluated for the PDB operated in the fixed mode. The same tool has the capability
method. Material A has a glass transition temperature (Tg) of to irradiate across a wafer larger than the irradiation area.
98.3°C and a degradation temperature (Td) of about 400°C. This is accomplished using a motorized stage with a
Figure 1 shows the melt viscosity profile of Material A. The synchronized flash rate to uniformly raster across the wafer.
moderate Tg of Material A allows for a melt viscosity profile Thus, a 150 mm diameter bonded wafer pair was rastered
suitable for a bonding temperature of 220°C. with two flashes in this work (Fig. 2(a)). Whereas a 300-mm
B. Bonding Process diameter bonded wafer pair can be rastered with eight flashes
as the motorized stage travels underneath the flashlamp in
Material A was spin-coated at a target thickness of 50 µm on
the x and y directions with a synchronized flash rate (Fig.
a 150-mm diameter Si wafer and baked to remove the solvent
2(b)). Fig. 3(a) shows photograph of a single-lamp PDB tool.
using the parameters shown in Table 1. A 200 nm thick W/Ti
Using proprietary lamp concatenation technology, a full-
alloy (80:20), which served as the light absorber layer
fledged production tool (Fig. 3(b)) having multiple lamps
(LAL), was sputtered on one side of 500 μm thick Eagle XG®
can irradiate an area of 150 mm x n(75) mm in the fixed
slim glass substrate (Corning, USA). This substrate was used
mode, where ‘n’ is the number of lamps present. Thus, a 2-
as the carrier. The LAL coated side carrier was then bonded
lamp production tool is equipped to debond a 150-mm
onto the Si wafer coated with Material A via thermo-
diameter bonded wafer pair in a single flash of light. These
compression bonding process using an EVG® 510 Bonder.
tools have integrated TCP/IP command protocols allowing
The bond conditions shown in Table 1. The bonded Si wafer
for integration into existing debonding equipment.
was then subjected to back-grinding process to thin the Si
wafer from 700 µm to 70 µm thick. D. Photonic Debonding Process
C. Photonic Debonding Tool Six wafer pairs (150-mm diameter) bonded with Material A
underwent PDB using the PDB tool. The bonded wafer pair
A high, instantaneous power photonic debonding tool,
was placed on the motorized debonding stage with the carrier
(PulseForge® IX2-95X) from NovaCentrix, USA was used
facing the flashlamp (Fig. 4(a)). The debonding stage
to demonstrate the PDB method. This tool used a 24-mm

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(a) (b) (a)

Figure 2. Processing strategy to debond 150 mm and 300 mm

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bonded wafer pair using a single-lamp photonic debonding
tool (not to scale) (b)
(a) (b)

Figure 4. (a) Illustration of the debonding process (not to

scale) and (b) photograph of the bonded wafer pair on the
debonding stage
Figure 3. Photonic debonding tool (a) single-lamp, (b)
production scale Table 2. Cleaning Procedure of Material A Si Wafer
Step Spin Speed (rpm) Time (s) Solvent Dispense
consisted of a graphite chuck with vacuum assist to 1 1000 130 Cyclopentanone
thoroughly hold down the wafer pair as the stage moves 2 1000 15 Isopropanol
during the debonding process. Each flash of light lasts 3 1000 15 No Solvent
300 µs, so the effective debonding time for a 150-mm
diameter bonded wafer pair is less than 1 second. When Table 3. Cleaning Procedure of Material A Carrier Wafer
irradiated through the glass, the light absorber layer absorbs Step Spin Speed (rpm) Time (s) Solvent Dispense
majority of the light and converts it to the heat needed to 1 1000 15 Cyclopentanone
debond the carrier from the Si wafer. Thermal response in 2 1000 15 Isopropanol
the material stack during the PDB process was modelled 3 1000 15 No Solvent
using SimPulse® and is discussed in the results section.
After successful debonding, the carrier and the Si wafer are from 190 nm – 1200 nm. Spectra were analyzed using
transferred to the cleaning station. SpectraWiz® spectrometer software (StellarNet Inc.).

E. Cleaning Process III. Results and Discussion

The cleaning process was carried out on a 300-mm CEE® The bonding material is a critical part to the temporary bond
spin coater with a pressure pod dispense apparatus and and debond process, requiring a specific set of properties
utilizing a spin chuck for clamping the thinned wafer on the depending on the type of application and debond method. For
film frame for support. The dispense was set up to the PDB method, Material A was chosen due to its moderate
consistently dispense solvent in the center of the wafer while Tg of 98.3°C which provides a melt viscosity profile ideal for
the wafer was spinning. The process conditions used to clean processing in the 200-250°C range, shown in Figure 1, and
both the carrier and thinned Si wafer are shown in in Table 2 its affinity to work well with the PDB method.
and 3. After bonding, the wafers were inspected for bond line film
thickness using a FRT MicroProf® 300 metrology tool, and
F. Optical Measurement inspected for bond line voids utilizing a confocal scanning
Optical transmittance and reflectance spectra of the LAL acoustic microscope (CSAM) (Sonix) . The bond line film
through the glass carrier were measured in a 2-inch thickness was an average of 62.4 µm, and the bond line film
integrating sphere (StellarNet Inc., IC2) using a StellarNet thickness map scan is shown in Figure 5. The CSAM image
Inc., BLUE-Wave spectrophotometer. Deuterium-Tungsten of the bonded wafer pair showed no voids, which generally
light source (Analytical Instrument Systems Inc., DT2000) present as a white or dark spot (Figure 6).
was used for these measurements as its emission ranged from

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Figure 5. Bond line film thickness of Material A

Figure 8. CSAM of bonded wafer pair after grind

The LAL coating on the glass carrier is crucial in enabling

the PDB method. Its primary function is to convert the
absorbed optical energy into the thermal energy needed to
facilitate the decomposition of the polymer at the LAL-
adhesive interface, which in turn creates the adhesion loss
needed to debond the wafer pairs. Its secondary function is
to block the penetration of the broadband light into the
adhesive and the Si wafer. As such, optical measurements
(Figure 9) with light incident from the back of the glass
substrate reveal that the absorber layer coating has 0%
transmittance (T) over the spectral range 200 nm to 1100 nm.
From the data, it is also understood that the reflectance (R)
Figure 6. CSAM of bonded wafer pair before grind
of the LAL when measured through the glass is ≈ 45% over
the same spectral range. Since A+R+T=100%, where A is
After bonding and inspection, the Si wafer underwent
the absorptance, R is the reflectance and T is the
backside grinding to 70 µm. The thinned Si wafer thickness
transmittance and T=0, the absorbance of the LAL is ≈55%
was measured using a FRT MicroProf® 300 metrology tool
of the incident light from the flashlamp.
and showed an average thickness of 69.6 µm (Figure 7). The
The absorptance value, along with all the thermophysical
thinned wafer pair was also investigated for voids using the
properties of each layer of the material stack, as well as the
CSAM and showed no voids post-grinding (Figure 8).
pulse conditions of the PulseForge tool, are aggregated into
the SimPulse software. This simulation aggregator outputs
the temperature versus time and depth into the stack using a

Figure 7. Thickness of Si wafer post-grinding

Figure 9. Optical measurement of the LAL

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1-D heat conduction model. This machine integrated (a)

modeling tool also allows a user to simulate the typical PDB
pulse conditions such as radiant intensity and fluence to
obtain the thermal profile of the material stack over time.
More information on the governing equations for this 1-D
modeling tool and its validation can be found in an earlier
report published by Guillot et. al. [11].
Fig. 10(a) shows the temperature rise at the LAL-adhesive
interface simulated for typical PDB conditions. The material
stack consists of Eagle XG® glass (500 µm), LAL (200 nm),

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bonding adhesive (50 µm) and Si wafer (70 µm). The
temperature at the LAL-adhesive interface reaches 882°C in
300 µs and then rapidly drops to below 300°C after only 2
ms. Since the adhesive degrades at about 400°C, the LAL
provides sufficiently high temperatures to degrade the
adhesive at the LAL-adhesive interface, resulting in the
debonding. In this way, PDB is fundamentally similar to (b)
laser debonding [12–14], but with the advantage of large-
area illumination.
Furthermore, the transient nature of the PDB process ensures
that the Si wafer does not reach the exceedingly high
temperatures of the LAL. The model predicts that the surface
of the Si wafer rises up to 150°C but equilibrates to room
temperature in 100 ms (Fig. 10 (b)). From the model, it is
evident that heat conduction from the LAL to the Si wafer is
limited by the adhesive, which typically has lower thermal
conductivity (0.1-0.5 W/m⋅K at room temperature) than the
LAL-coated glass carrier. Hence, most of the heat generated
at the LAL is dissipated into the glass carrier due to its higher
thermal conductivity (1.09 W/m⋅K at room temperature) and
thermal mass. However, the thermal budget to the Si wafer
is less than what is indicated by the model. This is due to the Figure 10. (a) Temperature rise during PDB (b) equilibrating
fact that after the 300 µs long pulse, the separation between to room temperature at 100 ms optical measurement of the
the bonding adhesive and LAL-coated carrier creates a layer LAL
of gas which has an order of magnitude lower thermal
conductivity than the adhesive. For example, air which has a material stack to validate the SimPulse model.
thermal conductivity of 0.0262 W/m⋅K at room temperature. Figure 11 shows a photograph of the thinned Si wafer and
This further reduces heat conduction to the Si wafer, and LAL-coated carrier debonded using the PDB method. The
effectively makes the PDB method self-limiting. Thus, it is LAL-coated carrier could be easily separated from the Si
inferred that the actual temperature achieved on the surface wafer by hand with no separation force needed. It is also
of the Si wafer is lower than 150°C. evident from the photograph that there is no adhesive residue
All six bonded wafer pairs that went through PDB method, left behind on the LAL-coated carrier. This indicates that
debonded successfully without any cracks or damage to the PDB results in a clean debond without any ashing or
Si wafer. The pulse conditions that enabled PDB used charring, which may otherwise occur with laser debonding
30 kW/cm2 of peak radiant intensity and 6.39 J/cm2 of [15]. Since the LAL coating prevents direct illumination of
fluence. The bonded wafer pairs were of 150-mm diameter the bonding adhesive, PDB is a relatively cleaner debonding
and thus received two flashes to cover the entire wafer pair. process than the laser debonding. The sputtered LAL coating
Each pulse was 300 µs in duration, and the motorized stage appears to be intact. Studies on reusing the LAL-coated
moved at the speed of 2.5 m/min underneath the flashlamp carrier after the PDB and cleaning processes are underway.
during debonding. As indicated by the SimPulse® tool, the After the photonic debond process, the LAL-coated carrier
Si wafer did not reach the exceedingly high temperature as wafer and thinned Si wafer underwent a spin-cleaning
the LAL-adhesive interface reached during the PDB. Hence, process, using the conditions shown in Tables 2 and 3. After
Si wafer remained intact without any cracks or damage. Our cleaning, the wafers were visually inspected for any residue
future work includes in situ temperature measurement in the left on the surface of the wafers. No residual polymer was

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observed on the surface of the wafers. Figures 12 and 13

show the visually inspected wafers before and after cleaning.
Table 4 shows a comparison between PDB and existing
debonding methods. It is noted that PDB can offer
significantly higher throughput (> 100 wafers per hour
(wph)) than any other method due to its shorter debond time
per wafer, yet at a reasonably low cost of ownership. The
closest comparison in terms of throughput is laser debonding
at 60 wph, but that method comes with a relatively higher
cost of ownership. [16, 17]

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Overall, these results demonstrate that PDB can offer new Figure 13. LAL coated Carrier before and after Spin Clean
solutions to the TBDB process by bringing in capabilities
such as high-throughput, low thermal stress on a Si wafer,
Table 4. Comparison between PDB and other debonding and low-ash/-residue debonding. Moreover, the same PDB
processes method can be extended for the panel-level packaging
(PLP). PLP is one of the latest trends in the packaging
industry. Its primary motivation is to lower the packaging
cost by scaling the packaging size from wafer-level to panel-
level formats and thereby increasing the number of packages
manufactured [18]. On the last note, it is worthwhile to
mention that the PDB process is scalable to large-areas with
the existing tool set. A version of this technology is currently
employed in manufacturing ultra-thin flexible circuits on
panel formats for flexible electronics applications [19, 20].
PDB tools in their current formats can be seamlessly
integrated with PLP technology. Table 5 provides
information on estimated time taken to PDB from a gen 6
panel (1.5 m x 1.8 m) using a multiple-lamp production tool.
Thus, the PDB process along with compatible Brewer
Science materials can be made production-ready for the up-
and-coming PLP technology.

Table 5. Multiple lamp PDB production tool with estimated

time to process a gen 6 panel (1.5 m x 1.8 m)

LAL coated Thinned

carrier Si Wafer

Figure 11. (a) Photonically debonded thinned Si wafer and

LAL-coated carrier, (b) 70 µm thinned Si wafer after PDB
separated from the dicing tape
IV. Conclusion
In this work, a novel, non-laser debonding method for wafer
and panel-level packaging is presented called PDB. The PDB
method uses pulsed broadband light from flashlamps to
debond the wafer pairs. It includes sputtered LAL on a glass
carrier which plays a crucial role in the efficient conversion
of optical energy from the flashlamp into heat required to
facilitate the PDB. A single-layer bonding adhesive, resilient
to mechanical force separation, was used to bond the LAL-
coated carrier and the Si wafer. The Si wafers were
background to 70 µm thick. The LAL-adhesive interface
Figure 12. Thin Si Wafer before and after spin clean reached a temperature far beyond the thermal decomposition

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temperature of the adhesive during PDB, while the Si wafer 60th Electronic Components and Technology Conference (ECTC)
IEEE, 2010, pp. 1393-1398.
remained at a significantly lower temperature. Successful
[16] D. Xu, H.W. Wang, J. Patel, X. F. Brun, K. Hrota, E. Capsuto. H. Kato,
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[17] https://content.coherent.com/legacy-assets/pdf/Thin-Wafer-Laser-
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