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2MBI1400VXB-120P-50 IGBT Modules

IGBT MODULE (V series)

1200V / 1400A / 2 in one package
Features
High speed switching
Voltage drive
Low Inductance module structure
Applications
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Maximum Ratings and Characteristics
Absolute Maximum Ratings (at Tc=25°C unless otherwise specified)
Items Symbols Conditions Maximum ratings Units
Collector-Emitter voltage VCES 1200 V
Gate-Emitter voltage VGES ±20 V
Tc=25°C 1800
Inverter

Ic Continuous
Tc=100°C 1400
Collector current Ic pulse 1ms 2800 A
-Ic 1400
-Ic pulse 1ms 2800
Collector power dissipation Pc 1 device 7650 W
Junction temperature Tj 175
Operating junction temperature (under switching conditions) Tjop 150
°C
Case temperature TC 150
Storage temperature Tstg -40 ~ +150
between terminal and copper base (*1)
Isolation voltage Viso AC : 1min. 4000 VAC
between thermistor and others (*2)
Mounting M5 6.0
Screw torque (*3) Main Terminals - M8 10.0 Nm
Sense Terminals M4 2.1
Note *1: All terminals should be connected together during the test.
Note *2: Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test.
Note *3: Recommendable Value : Mounting 3.0 ~ 6.0 Nm (M5) Recommendable Value : Main Terminals 8.0 ~ 10.0 Nm (M8)
Recommendable Value : Sense Terminals  1.8 ~ 2.1 Nm (M4)
Electrical characteristics (at Tj= 25°C unless otherwise specified)
Characteristics
Items Symbols Conditions Units
min. typ. max.
Zero gate voltage collector current ICES VGE = 0V, VCE = 1200V - - 12.0 mA
Gate-Emitter leakage current IGES VCE = 0V, VGE = ±20V - - 2400 nA
Gate-Emitter threshold voltage VGE (th) VCE = 20V, IC = 1400mA 6.0 6.5 7.0 V
VCE (sat) Tj=25°C - 1.75 2.20
(terminal) Tj=125°C - 2.10 -
(*4) VGE = 15V Tj=150°C - 2.15 -
Collector-Emitter saturation voltage V
IC = 1400A Tj=25°C - 1.65 2.10
VCE (sat)
Tj=125°C - 2.00 -
(chip)
Tj=150°C - 2.05 -
Input capacitance Cies VCE = 10V, VGE = 0V, f = 1MHz - 128 - nF
Inverter

ton - 1.00 -
Turn-on time tr VCC = 600V - 0.40 -
IC = 1400A
tr (i) - 0.15 - µs
VGE = ±15V
toff - 1.20 -
Turn-off time RG = 1.6Ω
tf - 0.15 -
VF Tj=25°C - 1.90 2.35
(terminal) Tj=125°C - 2.05 -
(*4) VGE = 0V Tj=150°C - 2.00 -
Forward on voltage V
IF = 1400A Tj=25°C - 1.80 2.25
VF
Tj=125°C - 1.95 -
(chip)
Tj=150°C - 1.90 -
Reverse recovery time trr IF = 1400A - 0.20 - µs
T=25°C - 5000 -
Thermistor

Resistance R Ω
T=100°C 465 495 520
B value B T=25/50°C 3305 3375 3450 K
Note *4: Please refer to page 6 , there is definition of on-state voltage at terminal.
Thermal resistance characteristics
Characteristics
Items Symbols Conditions Units
min. typ. max.
Inverter IGBT - - 0.0195
Thermal resistance (1device) Rth(j-c)
Inverter FWD - - 0.0360 °C/W
Contact thermal resistance (1device) (*5) Rth(c-f) with Thermal Compound - 0.00420 -
Note *5: This is the value which is defined mounting on the additional cooling fin with thermal compound.
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Characteristics (Representative)

[INVERTER] [INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Collector current vs. Collector-Emitter voltage (typ.)
Tj= 25°C / chip Tj= 150°C / chip
3000 3000
15V 15V
VGE=20V VGE= 20V
2500 2500

Collector current: Ic [A]

Collector current: Ic [A]

12V 12V
2000 2000
10V 10V
1500 1500

1000 1000

8V
500 500
8V

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Collector-Emitter voltage: VCE [V] Collector-Emitter voltage: VCE [V]

[INVERTER] [INVERTER]
Collector current vs. Collector-Emitter voltage (typ.) Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
VGE= 15V / chip Tj= 25°C / chip
3000 10

125°C
Collector-Emitter Voltage: VCE [V]

2500
8
Collector Current: Ic [A]

2000
Tj=25°C 6
150°C
1500
4
1000
Ic=2800A
2
500 Ic=1400A
Ic=700A
0 0
0 1 2 3 4 5 10 15 20 25

Collector-Emitter Voltage: VCE [V] Gate-Emitter Voltage: VGE [V]

[INVERTER] [INVERTER]
Gate Capacitance vs. Collector-Emitter Voltage (typ.) Dynamic Gate Charge (typ.)
VGE= 0V, ƒ= 1MHz, Tj= 25°C Vcc=600V, Ic=1400A, Tj= 25°C
1000
Collector-Emitter voltage: VCE [200V/div]
Gate Capacitance: Cies, Coes, Cres [nF]

Gate-Emitter voltage: VGE [5V/div]

Cies
VGE
100
VCE

10 Cres

Coes

1 0 2000 4000 6000 8000 10000 12000 14000

0 5 10 15 20 25 30
Collector-Emitter voltage: VCE [V] Gate charge: Qg [nC]

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[INVERTER] [INVERTER]
Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=25°C Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000 10000
Tj=125oC
Switching time: ton, tr, toff, tf [nsec]

Switching time: ton, tr, toff, tf [nsec]

Tj=150oC
toff
toff
1000 1000
ton ton tr
tr

100 tf 100 tf

10 10
0 1000 2000 3000 0 1000 2000 3000

Collector current: Ic [A] Collector current: Ic [A]

[INVERTER] [INVERTER]
Switching time vs. Gate resistance (typ.) Switching loss vs. Collector current (typ.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000 1000
Switching loss: Eon, Eoff, Err [mJ/pulse]

Tj=125oC
Switching time: ton, tr, toff, tf [nsec]

Tj=150oC
toff
750
1000
ton
tr 500
Eoff
100 tf
250
Eon
Tj=125oC
Tj=150oC
Err
10 0
0.1 1 10 0 1000 2000 3000

Gate resistance: RG [Ω] Collector current: Ic [A]

[INVERTER] [INVERTER]
Switching loss vs. Gate resistance (typ.) Reverse bias safe operating area (max.)
Vcc=600V, Ic=1400A, VGE=±15V, Tj=125°C, 150°C +VGE=15V, -VGE=15V, RG=1.6Ω, Tj=150°C
800 3000
Switching loss: Eon, Eoff, Err [mJ/pulse]

Tj=125oC
Tj=150oC 2500
600
Collector current: Ic [A]

2000

400 Eoff 1500

Notice)
Please refer to page 6.
1000
Eon There is definision of VCE.
200
Err 500

0 0
0 1 10 0 200 400 600 800 1000 1200 1400
Gate resistance: RG [Ω] Collector-Emitter voltage: VCE [V]

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[INVERTER] [INVERTER]
Forward Current vs. Forward Voltage (typ.) Reverse Recovery Characteristics (typ.)
chip Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=25°C
3000 10000

Reverse recovery time: trr [nsec]

Reverse recovery current: Irr [A]
2500 Tj=25°C
Forward current: IF [A]

2000 1000 Irr

1500

trr
1000 100

125°C
500 150°C

0 10
0 1 2 3 0 1000 2000 3000
Forward on voltage: VF [V] Forward current: IF [A]

[INVERTER]
Reverse Recovery Characteristics (typ.)
Transient Thermal Resistance (max.)
Vcc=600V, VGE=±15V, RG=1.6Ω, Tj=125°C, 150°C
10000 1
Tj=125oC
Reverse recovery time: trr [nsec]
Reverse recovery current: Irr [A]

Tj=150oC
Thermal resistanse: Rth(j-c) [°C/W]

1000 Irr
0.1
FWD

trr
100 IGBT
0.01

10
0.001
0 1000 2000 3000
0.001 0.01 0.1 1
Forward current: IF [A]
Pulse Width : Pw [sec]

[THERMISTOR]

Temperature characteristic (typ.)

100
Resistance : R [kΩ]

10

0.1
-60 -40 -20 0 20 40 60 80 100 120 140 160

Temperature [°C]

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Outline Drawings, mm

LABEL2 (Fuji internal control codes)

* This label may be eliminated without notification.

LABEL

Equivalent Circuit Schematic

[ Inverter ] [ Thermistor ]

Main C1
TH1
Sense C1

G1 TH2
Main C2E1 Sense C2E1

G2

Sense E2

Main E2

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Definition of on-state voltage at terminal and switching characteristics

Main C1
Sense C1 Fuji defined VCE value of terminal by using
Sense C1 and Sense C2E1 for Upper arm and
Sense C2E1 and Sense E2 for Lower arm .
VCE (terminal)
G1 of Upper arm Switching characteristics of VCE also is defined
Sense C2E1 between Sense C1 and Sense C2E1 for Upper arm and
Main C2E1 Sense C2E1 and Sense E2 for Lower arm .

Please use these terminals whenever

VCE (terminal) measure spike voltage and on-state voltage .
G2
of Lower arm

Sense E2
Main E2

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WARNING

1.This Catalog contains the product specifications, characteristics, data, materials, and structures as of May 2011.
The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be
sur to obtain the latest specifications.

2.All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or
implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed)
granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged
infringement of other's intellectual property rights which may arise from the use of the applications described herein.

3.Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become
faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent
the equipment from causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your
design failsafe, flame retardant, and free of malfunction.

4.The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability
requirements.
• Computers • OA equipment • Communications equipment (terminal devices) • Measurement equipment
• Machine tools • Audiovisual equipment • Electrical home appliances • Personal equipment • Industrial robots etc.

5.If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below,
it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate
measures such as a backup system to prevent the equipment from malfunctioning even if a Fuji's product incorporated in the equipment
becomes faulty.
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• Medical equipment

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(without limitation).
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• Submarine repeater equipment

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No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd.

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Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions
set forth herein.