AP6N3R2P

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement D BVDSS 60V

▼ Low On-resistance RDS(ON) 3.2mΩ
▼ Fast Switching Characteristic
G
▼ RoHS Compliant & Halogen-Free
S

Description
AP4604 series
AP6N3R2 seriesare
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of power applications.
applications.
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Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter
. Rating Units
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage +20 V
4
ID@TC=25℃ Drain Current, VGS @ 10V (Silicon Limited) 160 A
4
ID@TC=25℃ Drain Current, VGS @ 10V 130 A
ID@TC=100℃ Drain Current, VGS @ 10V 100 A
1
IDM Pulsed Drain Current 400 A
PD@TC=25℃ Total Power Dissipation 138.8 W
PD@TA=25℃ Total Power Dissipation 2 W
3
EAS Single Pulse Avalanche Energy 80 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 0.9 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 62 ℃/W

1
201703131
AP6N3R2P

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=60A - - 3.2 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 5 V
gfs Forward Transconductance VDS=5V, ID=60A - 80 - S
IDSS Drain-Source Leakage Current VDS=48V, VGS=0V - - 25 uA
IGSS Gate-Source Leakage VGS=20V, VDS=0V - - 100 nA
Qg Total Gate Charge ID=60A - 152 243 nC
Qgs Gate-Source Charge VDS=30V - 44 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 49 - nC
td(on) Turn-on Delay Time VDS=30V - 28 - ns
tr Rise Time ID=60A - 105 - ns
td(off) Turn-off Delay Time RG=1.6Ω - 78 - ns
tf Fall Time VGS=10V - 120 - ns
Ciss Input Capacitance VGS=0V - 8400 13440 pF
Coss Output Capacitance VDS=30V - 3670 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 33 - pF
Rg Gate Resistance
.
f=1.0MHz - 2.3 4.6 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=60A, VGS=0V - - 1.3 V
trr Reverse Recovery Time IS=60A, VGS=0V, - 80 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 100 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
o
3.Starting Tj=25 C , VDD=30V , L=0.1mH , RG=25Ω
4.Package limitation current is 130A .

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP6N3R2P

400 240
o
T C = 25 C 10V 10V
T C =150 o C
9.0V 9.0V
200
8.0V 8.0V
ID , Drain Current (A)

ID , Drain Current (A)

300
7.0V 7.0V
V G =6.0V 160 V G =6.0V

200 120

80

100

40

0 0
0 4 8 12 16 0 2 4 6 8

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

12 2.4

I D =60A I D =60A
T C =25 o C V G =10V
10 2.0
Normalized RDS(ON)
RDS(ON) (mΩ)

8 1.6

6
. 1.2

4 0.8

2 0.4
4 5 6 7 8 9 10 -100 -50 0 50 100 150

V GS Gate-to-Source Voltage (V) T j , Junction Temperature ( o C)

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
100 2

I D =250uA

1.6

o o
Normalized VGS(th)

10
T j =150 C T j =25 C
IS(A)

1.2

0.8

0.4

0.1 0
0 0.2 0.4 0.6 0.8 1 1.2 -100 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j ,Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP6N3R2P

f=1.0MHz
12 16000

I D =60A
10
V DS =30V
VGS , Gate to Source Voltage (V)

12000

C (pF)
6 8000 C iss

4000
C oss
2

C rss
0 0
0 40 80 120 160 200 1 21 41 61 81

Q G , Total Gate Charge (nC) V DS ,Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

1000 1

Duty factor=0.5
Normalized Thermal Response (Rthjc)

Operation in this area

100 limited by RDS(ON)
0.2

0.1 0.1
10us
10
100us
ID (A)

0.05

0.02

1
1ms
. 0.01

Single Pulse PDM

0.01
t
10ms T
0.1

T C =25 o C
Duty factor = t/T
DC Peak Tj = PDM x Rthjc + T C

Single Pulse
0.01 0.001
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

200 200

V DS =5V

160 160
ID , Drain Current (A)
ID , Drain Current (A)

Limited by package

120 120

80 80

T j =150 o C
T j =25 o C
40 40

o
T j = -55 C

0 0
25 50 75 100 125 150 0 2 4 6 8 10

o
T C , Case Temperature ( C) V GS , Gate-to-Source Voltage (V)

Fig 11. Drain Current v.s. Case Fig 12. Transfer Characteristics
Temperature

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 AP6N3R2P

40 160

o
T j =25 C

PD, Power Dissipation(W)

30 120
RDS(ON) (mΩ)

20 80

10 40

V GS =10V

0 0
0 20 40 60 80 100 120 0 50 100 150

I D , Drain Current (A) T C , Case Temperature( o C)

Fig 13. Typ. Drain-Source on State Fig 14. Total Power Dissipation
Resistance
2

I D = 1mA

1.6
Normalized BVDSS

1.2

0.8
.

0.4

0
-100 -50 0 50 100 150

o
T j , Junction Temperature ( C)

Fig 15. Normalized BVDSS v.s. Junction

Temperature

5
AP6N3R2P
MARKING INFORMATION

Part Number

6N3R2

YWWSSS

Date Code (YWWSSS)

Y：Last Digit Of The Year
WW：Week
SSS：Sequence