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Bai Tap Ban Dan - 1

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190104 Nguyễn Ngọc Tường Vy
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26 views6 pages

Bai Tap Ban Dan - 1

Uploaded by

190104 Nguyễn Ngọc Tường Vy
Copyright
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Exercise 1

1. The lattice constant of GaAs at 300 K is 5.65 Å. Determine the number of Ga


atoms/cm3 and the number or As atoms/cm3. Calculate the mass density of GaAs. The
molar weights of Ga and As are 69.7 g and 74.9 g, respectively. Avogadro’s number
is 6.02 × 1023 atoms (or molecules)/mole.

Zincblende structure

2. Basing on the bonding model for a semiconductor


a. Draw the bonding model for GaAs depicting the removal of one Ga and one
As atom.
b. Redraw the bonding model showing the insertion of Si atoms into the
missing Ga and As sites.

c. Is the GaAs p- or n-type when Si atoms replace Ga atoms? Explain.


d. Is the GaAs p- or n-type when Si atoms replace As atoms? Explain.
e. Suppose it takes an energy amount equal to 1.43 eV to break one of those
bonds shown in the figure, draw the band model for GaAs.
f. Draw the band model for GaAs when GaAs is doped with Si on (i) Ga sites
and (ii) on As sites. Assume typical values for the ionization energy.

3. Intrinsic Si has 1 × 1010 cm–3 electrons in its conduction band at 300 K. What will
be the number of holes in the valence band?

 In intrinsic Si, the number of electrons is equal to the number of holes because a
hole is created in the valence band whenever an electron “jumps” from the valence
band into the conduction band. The number of electrons in the conduction band is
called “free electron concentration”, n, and the number of holes in the valence band is
called “free hole concentration”, p. In an intrinsic semiconductor, n = p = ni at any
given temperature. The values of ni depends on the bandgap as well as on the
temperature.

4. Consider three intrinsic semiconductors: Ge, Si and GaAs.

a. Which one has the largest number of electron-hole pairs at room temperature?
Explain
briefly.

 Ge. The lower the band gap, the less energy is required to generate electron – hole
pairs (EHP). Note the values of intrinsic carrier concentration, ni for different
semiconductors , ni is smallest for GaAs and largest for Ge.

b. Which one has the highest resistivity at 300K? Explain.

 GaAs has the lowest number of electron-hole pairs since it has the largest
bandgap. It
takes more energy to create EHP in GaAs compared to Ge. The resistivity depends on
the
number of EHP. GaAs has the highest resistivity or the lowest conductivity. Ge has
the lowest resistivity at 300K.

5. Mention two n-type dopants and two p-type dopants in Si. Draw the band diagram
of an n-type Si sample. Draw the band diagram of a p-type Si sample.

6. Write down the word definition of gc(E) and gv(E).

 gc(E) is density of states for electrons in the conduction band per unit volume per
unit energy.
 gv(E) is the density of the states for the holes in the valence band per unit volume
per unit
energy.

7. The probability that an electron will occupy a state at the energy EC is the same as
the
probability that a hole will occupy a state at the energy EV. What is the energy EF of
the
Fermi-level? Show your work.
8. For a silicon sample maintained at T = 300K, the number of electrons in the
conduction band, (i.e., n) is 1 × 1016 cm-3. Calculate the number of holes in the
valence band (i.e., p). Also, draw the band diagram (i.e., mark the position of the
Fermi-level, EF, and EC, EV, and Ei).

 The number of holes is np = ni2


so, p = ni2/n = (1020/1016) cm-3 = 104 cm-3

EF - EI = kT ln(1016/1010) . This means that EF is 0.353 eV above Ei

9. For a semiconductor (not Si) with a band gap 1 eV, the n and p values are 1 ×
1016 cm-3 and 1 × 106 cm-3, respectively. Is the semiconductor n-type or p-type?
What will be the intrinsic carrier concentration for this semiconductor?

N-type since n > p.


ni = (np) 1/2 = 1011 cm-3

10. A Si wafer is uniformly doped with 2 × 1017 cm-3 of Phosphorous and 4 × 1017
cm-3 of Boron. Assuming full ionization, calculate the following quantities at room
temperature (T = 300 K).
a) The equilibrium hole concentration, p. (start with the charge-neutrality condition).
p = NA- ND =2 × 1017cm-3.

(Use the full charge balance equation: p + ND = n + NA.)


(b) The equilibrium electron concentration, n.
N = ni2/p=1020/(2 × 1017) cm-3 = 500 cm-3

(c) The position of the Fermi level (EF) relative to the intrinsic level (Ei). Draw the
band diagram show these to levels.
p = ni × exp [(Ei – EF) / kT]
2 * 1017= 1010 * exp [(Ei – EF) / kT]
(Ei – EF)=0.435 eve

11. A Si sample is doped such that it has 1017 cm-3 electrons in its conduction band
(i.e. n = 1017 cm-3) at both 300 K and 200 K. Calculate the hole concentrations at
300 K and
200 K. The ni values for various temperatures.

Always, np ≈ ni 2

At 300 K, n = 1017 cm–3, ni = 1010 cm–3, p = 103 cm–3

At 200 K, n = 1017 cm–3, ni = 105 cm–3, p = 10-7 cm–3

12. Determine the equilibrium electron and hole concentrations inside a uniformly
doped sample of Si under the following conditions:

(a) T = 300 K, NA << ND, ND = 1015 cm-3

 At room temperature in Si, ni = 1010 cm-3.

ND >> NA , ND >> ni and n = ND = 1015 cm–3

p = ni 2/ ND = 105 cm–3

(b) T = 300 K, ND << NA , NA = 1016 cm-3

Since ND << NA, NA >> ni

p = NA = 1016 cm–3
n = ni 2/ NA = 104 cm–3

(c) NA = 9 × 1015 cm-3, ND = 1016 cm-3, T = 300 K.


 considering both ND and NA, but ND-NA >> ni
n = ND – NA = 1015 cm–3
p = ni 2/ (ND – NA) = 105 cm–3

(d) ND = 1014 cm-3, T = 450 K.

at 450 K, ni (Si) ≈ 5 × 1013 cm–3

 ni ~ ND  use n = ND /2 + [ (ND /2) + ni 2] 1/2 = 1.21 × 1014 cm–3

p = ni 2 /n = 2.07 × 1013 cm–3

(e) ND = 1014 cm-3, T = 650 K.

at 650 K, ni = 1016 cm–3

ni >> ND

p = ni = 1016 cm–3

n = ni = 1016 cm–3

13. How to make n-type ZnO and p-type ZnO materials, explain.

14. Explain how to form band energy.

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