LTC1151

Dual ±15V Zero-Drift

Operational Amplifier
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FEATURES DESCRIPTIO
■ Maximum Offset Voltage Drift: 0.05µV/°C The LTC®1151 is a high voltage, high performance dual
■ High Voltage Operation: ±18V zero-drift operational amplifier. The two sample-and-hold
■ No External Components Required capacitors per amplifier required externally by other chop-
■ Maximum Offset Voltage: 5µV per amplifiers are integrated on-chip. The LTC1151 also
■ Low Noise: 1.5µVP-P (0.1Hz to 10Hz) incorporates proprietary high voltage CMOS structures
■ Minimum Voltage Gain: 125dB which allow operation at up to 36V total supply voltage.
■ Minimum CMRR: 106dB
■
The LTC1151 has a typical offset voltage of 0.5µV,
Minimum PSRR: 110dB
drift of 0.01µV/°C, 0.1Hz to 10Hz input noise voltage of
■ Low Supply Current: 0.9mA/Amplifier
■
1.5µVP-P, and a typical voltage gain of 140dB. It has a slew
Single Supply Operation: 4.75V to 36V
■
rate of 3V/µs and a gain-bandwidth product of 2.5MHz
Input Common Mode Range Includes Ground
with a supply current of 0.9mA per amplifier. Overload
■ Typical Overload Recovery Time: 20ms
■
recovery times from positive and negative saturation are
Available in 8-Lead N8 and 16-Lead SW Packages
3ms and 20ms, respectively.
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APPLICATIO S The LTC1151 is available in a standard 8-lead plastic DIP
package as well as a 16-lead wide body SO. The LTC1151
■ Strain Gauge Amplifiers is pin compatible with industry-standard dual op amps
■ Instrumentation Amplifiers and runs from standard ±15V supplies, allowing it to plug
■ Electronic Scales in to most standard bipolar op amp sockets while offering
■ Medical Instrumentation significant improvement in DC performance.
■ Thermocouple Amplifiers , LTC and LT are registered trademarks of Linear Technology Corporation.
■ High Resolution Data Acquisition All other trademarks are the property of their respective owners.

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TYPICAL APPLICATIO
±15V Dual Thermocouple Amplifier Noise Spectrum
51Ω 100Ω* 240k 15V 60

50
0.1µF
NOISE VOLTAGE (nV/√Hz)

0.1µF
6 40
8
15V –
1/2 7 OUTPUT A
LTC1151 30
100mV/°C
VIN K 7 – + 2k 5
+
LT1025 20
3
VO 51Ω 100Ω* 240k
GND R– TYPE K 10
470k
4 5
0
–15V 2 0.1µF 1 10 100 1k 10k
–
1/2 1 OUTPUT B FREQUENCY (Hz)
LTC1151 100mV/°C 1151 TA02
– + 2k 3
+
4

0.1µF
TYPE K –15V
* FULL SCALE TRIM: TRIM FOR 10.0V OUTPUT
WITH THERMOCOUPLE AT 100°C 1151 TA01

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LTC1151
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ABSOLUTE AXI U RATI GS
(Note 1)

Total Supply Voltage (V + to V –) ............................. 36V Operating Temperature Range

Input Voltage (Note 2) .......... (V + + 0.3V) to (V – – 0.3V) LTC1151C .............................................. 0°C to 70°C
Output Short Circuit Duration ......................... Indefinite Storage Temperature Range ................ – 65°C to 150°C
Burn-In Voltage ...................................................... 36V Lead Temperature (Soldering, 10 sec)................. 300°C
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PACKAGE/ORDER I FOR ATIO
ORDER PART TOP VIEW ORDER PART
TOP VIEW
NUMBER NC 1 16 NC NUMBER
NC 2 15 NC
OUT A 1 8 V+ OUT A 3 14 V+
–IN A 2 7 OUT B LTC1151CN8 –IN A 4 13 OUT B LTC1151CSW
+IN A 3 6 –IN B +IN A 5 12 –IN B
V– 4 5 +IN B V– 6 11 +IN B

N8 PACKAGE NC 7 10 NC
8-LEAD PLASTIC DIP NC 8 9 NC

SW PACKAGE
TJMAX = 110°C, θJA = 130°C/ W 16-LEAD PLASTIC SO (WIDE)
TJMAX = 110°C, θJA = 200°C/ W

Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF
Lead Free Part Marking: http://www.linear.com/leadfree/

Consult LTC Marketing for parts specified with wider operating temperature ranges.

ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, unless otherwise specified.

LTC1151C
PARAMETER CONDITIONS MIN TYP MAX UNITS
Input Offset Voltage TA = 25°C (Note 3) ±0.5 ±5 µV
Average Input Offset Drift (Note 3) ● ±0.01 ±0.05 µV/°C
Long Term Offset Voltage Drift 50 nV/√mo
Input Offset Current TA = 25°C ±20 ±200 pA
● ±0.5 nA
Input Bias Current TA = 25°C ±15 ±100 pA
● ±0.5 nA
Input Noise Voltage RS = 100Ω, 0.1Hz to 10Hz 1.5 µVP-P
RS = 100Ω, 0.1Hz to 1Hz 0.5 µVP-P
Input Noise Current f = 10Hz (Note 4) 2.2 fA/√Hz
Input Voltage Range Positive ● 12 13.2 V
Negative ● –15 –15.3 V
Common Mode Rejection Ratio VCM = V – to 12V ● 106 130 dB
Power Supply Rejection Ratio VS = ±2.375V to ±16V ● 110 130 dB
Large-Signal Voltage Gain RL = 10k, VOUT = ±10V ● 125 140 dB

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 LTC1151
ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VS = ±15V, unless otherwise specified.

LTC1151C
PARAMETER CONDITIONS MIN TYP MAX UNITS
Maximum Output Voltage Swing RL = 10k, TA = 25°C ±13.5 ±14.50 V
RL = 10k ● +10.5/–13.5 V
RL = 100k ±14.95 V
Slew Rate RL = 10k, CL = 50pF 2.5 V/µs
Gain-Bandwidth Product 2 MHz
Supply Current per Amplifier No Load, TA = 25°C 0.9 1.5 mA
No Load ● 2.0 mA
Internal Sampling Frequency 1000 Hz

The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VS
= 5V, unless otherwise specified.
Input Offset Voltage TA = 25°C (Note 3) ±0.05 ±5 µV
Average Input Offset Drift (Note 3) ● ±0.01 ±0.05 µV/°C
Long Term Offset Voltage Drift 50 nV/√mo
Input Offset Current TA = 25°C ±10 100 pA
Input Bias Current TA = 25°C ±5 50 pA
Input Noise Voltage RS = 100Ω, 0.1Hz to 10Hz 2.0 µVP-P
RS = 100Ω, 0.1Hz to 1Hz 0.7 µVP-P
Input Noise Current f = 10Hz (Note 4) 1.3 fA/√Hz
Input Voltage Range Positive 2.7 3.2 V
Negative 0 – 0.3 V
Common Mode Rejection Ratio VCM = 0V to 2.7V 110 dB
Power Supply Rejection Ratio VS = ±2.375V to ±16V ● 110 130 dB
Large-Signal Voltage Gain RL = 10k, VOUT = 0.3V to 4.5V ● 115 140 dB
Maximum Output Voltage Swing RL = 10k to GND 4.85 V
RL = 100k to GND 4.97 V
Slew Rate RL = 10k, CL = 50pF 1.5 V/µs
Gain Bandwidth Product 1.5 MHz
Supply Current per Amplifier No Load, TA = 25°C 0.5 1.0 mA
● 1.5 mA
Internal Sampling Frequency 750 Hz
Note 1: Absolute Maximum Ratings are those values beyond which the life Note 3: These parameters are guaranteed by design. Thermocouple effects
of a device may be impaired. preclude measurement of these voltage levels in high speed automatic test
Note 2: Connecting any terminal to voltages greater than V + or less than V – systems. VOS is measured to a limit determined by test equipment
may cause destructive latch-up. It is recommended that no sources capability.
operating from external supplies be applied prior to power-up of the Note 4: Current Noise is calculated from the formula:
LTC1151. IN = √(2q • Ib)
where q = 1.6 × 10 –19 Coulomb.

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 LTC1151
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TYPICAL PERFOR A CE CHARACTERISTICS
Common Mode Input Voltage
Supply Current vs Supply Voltage Supply Current vs Temperature Range vs Supply Voltage
2.5 2.00 15
TA = 25°C VS = ±15V TA = 25°C
10
TOTAL SUPPLY CURRENT (mA)

TOTAL SUPPLY CURRENT (mA)

2.0

COMMON MODE RANGE (V)

1.75 5
1.5
0

1.0
1.50 –5

0.5
–10

0 1.25 –15
4 8 12 16 20 24 28 32 36 0 10 20 30 40 50 60 70 0 ±2.5 ±5.0 ±7.5 ±10.0 ±12.5 ±15.0
TOTAL SUPPLY VOLTAGE (V) TEMPERATURE (˚C) SUPPLY VOLTAGE (V)
1151 G01 1151 G03
1151 G02

Output Short-Circuit Current vs Undistorted Output Swing vs

Supply Voltage Frequency CMRR vs Frequency
6 30 160
TA = 25°C VS = ±15V
SHORT-CIRCUIT OUTPUT CURRENT (mA)

4 140
25
VOUT = V –
OUTPUT VOLTAGE (VP-P)

2 120
ISOURCE 20
0 100

–3 15 CMRR (dB) 80

–6 VOUT = V + 60
10
ISINK
–9 40
5
–12 VS = ±15V 20
RL = 10k
–15 0 0
4 8 12 16 20 24 28 32 36 100 1k 10k 100k 1M 1 10 100 1k 10k 100k
TOTAL SUPPLY VOLTAGE, V + TO V – (V) FREQUENCY (Hz) FREQUENCY (Hz)
1151 G04 1151 G05 1151 G06

Gain and Phase vs Frequency Gain and Phase vs Frequency PSRR vs Frequency
160
100 VS = ±15V 100 VS = ±2.5V VS = ±15V
CL = 100pF CL = 100pF 140
135 135
80 80 120 POSITIVE
PHASE PHASE SUPPLY
90 90
100
PHASE (DEG)
PHASE (DEG)

PSRR (dB)
GAIN (dB)

60
GAIN (dB)

60
GAIN GAIN
45 45 80 NEGATIVE
40 40 SUPPLY
60
0 0
20 20 40
–45 –45
20
0 0
0
10 100 1k 10k 100k 1M 10M 10 100 1k 10k 100k 1M 10M 1 10 100 1k 10k 100k
FREQUENCY (Hz) FREQUENCY (Hz) FREQUENCY (Hz)
1151 G07 1151 G08 1151 G09

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 LTC1151
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TYPICAL PERFOR A CE CHARACTERISTICS
Input Bias Current Magnitude vs Input Bias Current Magnitude vs Input Bias Current vs
Temperature Supply Voltage Input Common Mode Voltage
1000 18 60
VCM = 0 TA = 25°C VS = ±15V
VS = ±15V VCM = 0V 45 TA = 25°C
15

INPUT BIAS CURRENT (pA)

INPUT BIAS CURRENT (pA)
INPUT BIAS CURRENT (pA)

30
–IB
100 12
15

9 0

–15
10 6 +IB
–30
3
–45

1 0 –60
–50 –25 0 25 50 75 100 125 0 ±2 ±4 ±6 ±8 ±10 ±12 ±14 ±16 –15 –10 –5 0 5 10 15
TEMPERATURE (°C) SUPPLY VOLTAGE (V) INPUT COMMON MODE VOLTAGE (V)
1151 G10 1151 G11 1151 G12

0.1Hz to 10Hz Noise

VS = ±15V
TA = 25°C

1µV

1s 10s 1151 G13

Small-Signal Transient Response Large-Signal Transient Response Negative Overload Recovery

5V/DIV

5
0
50mV/DIV

2V/DIV

0
2V/DIV

1151 G14 1151 G15 1151 G16

2ms/DIV 2ms/DIV 2ms/DIV
VS = ±15V, AV = 1 VS = ±15V, AV = 1 VS = ±15V, AV = –100
CL = 100pF, RL = 10k CL = 100pF, RL = 10k NOTE: POSITIVE OVERLOAD RECOVERY IS
TYPICALLY 3ms.

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LTC1151
TEST CIRCUITS
Offset Voltage Test Circuit

1M

V+
1k 2 7
–
6
LTC1151 OUTPUT
3
+ RL
4
–
V
1151 TC01

DC-10Hz Noise Test Circuit

100pF

100k

5V 5V

2 7 2 8 0.04µF 6
– – –
10Ω 6 1/2 1 1/2 7
LTC1151 OUTPUT
800k LT1057 800k 800k LT1057
3 3 5
+ +4 +
4

–5V 0.02µF –5V 0.01µF

1151 TC02

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 LTC1151
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APPLICATI S I FOR ATIO
ACHIEVING PICOAMPERE/MICROVOLT PERFORMANCE Connectors, switches, relay contacts, sockets, resistors,
solder, and even copper wire are all candidates for thermal
Picoamperes EMF generation. Junctions of copper wire from different
In order to realize the picoampere level of accuracy of the manufacturers can generate thermal EMFs of 200nV/°C;
LTC1151 proper care must be exercised. Leakage currents four times the maximum drift specification of the LTC1151.
in circuitry external to the amplifier can significantly de- Minimizing thermal EMF-induced errors is possible if
grade performance. High quality insulation should be used judicious attention is given to circuit board layout and
(e.g., Teflon); cleaning of all insulating surfaces to remove component selection. It is good practice to minimize the
fluxes and other residues will probably be necessary, number of junctions in the amplifier’s input signal path.
particularly for high temperature performance. Surface Avoid connectors, sockets, switches and relays where
coating may be necessary to provide a moisture barrier in possible. In instances where this is not possible, attempt
high humidity environments. to balance the number and type of junctions so that
Board leakage can be minimized by encircling the input differential cancellation occurs. Doing this may involve
connections with a guard ring operated at a potential close deliberately introducing junctions to offset unavoidable
to that of the inputs: in inverting configurations the guard junctions.
ring should be tied to ground; in noninverting connections Figure 1 is an example of the introduction of an unneces-
to the inverting input. Guarding both sides of the printed sary resistor to promote differential thermal balance.
circuit board is required. Bulk leakage reduction depends Maintaining compensating junctions in close physical
on the guard ring width. proximity will keep them at the same temperature and
reduce thermal EMF errors.
Microvolts
When connectors, switches, relays and/or sockets are
Thermocouple effects must be considered if the LTC1151’s
necessary they should be selected for low thermal EMF
ultra low drift is to be fully utilized. Any connection of
activity. The same techniques of thermally balancing and
dissimilar metals forms a thermoelectric junction produc-
coupling the matching junctions are effective in reducing
ing an electric potential which varies with temperature
the thermal EMF errors of these components.
(Seebeck effect). As temperature sensors, thermocouples
exploit this phenomenon to produce useful information. In
low drift amplifier circuits the effect is a primary source of
error.

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LTC1151
UO U W U
APPLICATI S I FOR ATIO
Resistors are another source of thermal EMF errors. they are outside the LTC1151’s offset nulling loop and
Table 1 shows the thermal EMF generated for different cannot be cancelled. The input offset voltage specification
resistors. The temperature gradient across the resistor is of the LTC1151 is actually set by the package-induced
important, not the ambient temperature. There are two warm-up drift rather than by the circuit itself. The thermal
junctions formed at each end of the resistor and if these time constant ranges from 0.5 to 3 minutes, depending on
junctions are at the same temperature, their thermal EMFs package type.
will cancel each other. The thermal EMF numbers are
approximate and vary with resistor value. High values give ALIASING
higher thermal EMF. Like all sampled data systems, the LTC1151 exhibits
Table 1. Resistor Thermal EMF aliasing behavior at input frequencies near the sampling
frequency. The LTC1151 includes a high frequency cor-
RESISTOR TYPE THERMAL EMF/°C GRADIENT
rection loop which minimizes this effect. As a result,
Tin Oxide >1mV/°C
aliasing is not a problem for many applications.
Carbon Composition ∼450µV/°C
Metal Film ∼20µV/°C For a complete discussion of the correction circuitry and
Wire Wound aliasing behavior, please refer to the LTC1051/LTC1053
Evenohm, Manganin ∼2µV/°C data sheet.

PACKAGE-INDUCED OFFSET VOLTAGE LOW SUPPLY OPERATION

Package-induced thermal EMF effects are another impor- The minimum supply for proper operation of the LTC1151
tant source of errors. They arise at the junctions formed is typically 4.0V (±2.0V). In single supply applications,
when wire or printed circuit traces contact a package lead. PSRR is guaranteed down to 4.7V (±2.35V) to ensure
Like all the previously mentioned thermal EMF effects, proper operation at minimum TTL supply voltage of 4.75V.

NOMINALLY UNNECESSARY LEAD WIRE/SOLDER

RESISTOR USED TO COPPER TRACE JUNCTION
THERMALLY BALANCE
OTHER INPUT RESISTOR
+
LTC1151 OUTPUT

–
RESISTOR LEAD, SOLDER,
COPPER TRACE JUNCTION

1151 F01

Figure 1. Extra Resistors Cancel Thermal EMF

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 LTC1151
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TYPICAL APPLICATI S
High Voltage Instrumentation Amplifier

1k
V+
1M
1M 0.1µF
2 8
–
1/2 1 1k 6
LTC1151 –
3 1/2 7
–IN + LTC1151 VOUT
5
+IN + GAIN = 1000V/V
4 OUTPUT OFFSET < 5mA
0.1µF
V– 1151 TA03

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LTC1151
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PACKAGE DESCRIPTIO
N8 Package
8-Lead PDIP (Narrow .300 Inch)
(Reference LTC DWG # 05-08-1510)

.400*
(10.160)
MAX

8 7 6 5

.255 ± .015*
(6.477 ± 0.381)

1 2 3 4

.300 – .325 .045 – .065 .130 ± .005

(7.620 – 8.255) (1.143 – 1.651) (3.302 ± 0.127)

.065
(1.651)
.008 – .015 TYP
(0.203 – 0.381) .120
(3.048) .020
+.035 MIN (0.508)
.325 –.015

( )
.100 .018 ± .003 MIN
+0.889
8.255 (2.54) (0.457 ± 0.076)
–0.381 N8 1002
BSC
NOTE:
INCHES
1. DIMENSIONS ARE
MILLIMETERS
*THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .010 INCH (0.254mm)

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 LTC1151
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PACKAGE DESCRIPTIO
SW Package
16-Lead Plastic Small Outline (Wide .300 Inch)
(Reference LTC DWG # 05-08-1620)

.030 ±.005 .050 BSC .045 ±.005 .398 – .413

TYP (10.109 – 10.490)
NOTE 4
N 16 15 14 13 12 11 10 9

.420 .325 ±.005

MIN
NOTE 3 .394 – .419
(10.007 – 10.643)

1 2 3 N/2 N/2

RECOMMENDED SOLDER PAD LAYOUT

1 2 3 4 5 6 7 8

.291 – .299
(7.391 – 7.595)
NOTE 4 .037 – .045
.093 – .104
.010 – .029 × 45° (0.940 – 1.143)
(2.362 – 2.642)
(0.254 – 0.737)
.005
(0.127)
RAD MIN 0° – 8° TYP

.050
.009 – .013 (1.270) .004 – .012
(0.229 – 0.330) NOTE 3 BSC (0.102 – 0.305)
.014 – .019
.016 – .050
(0.356 – 0.482)
(0.406 – 1.270)
TYP
NOTE:
INCHES
1. DIMENSIONS IN S16 (WIDE) 0502
(MILLIMETERS)
2. DRAWING NOT TO SCALE
3. PIN 1 IDENT, NOTCH ON TOP AND CAVITIES ON THE BOTTOM OF PACKAGES ARE THE MANUFACTURING OPTIONS.
THE PART MAY BE SUPPLIED WITH OR WITHOUT ANY OF THE OPTIONS
4. THESE DIMENSIONS DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS.
MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED .006" (0.15mm)

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LTC1151
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TYPICAL APPLICATI S
Bridge Amplifier with Active Common-Mode Suppression

15V 15V

350Ω TRIM TO SET 49.9k

BRIDGE OPERATING
CURRENT
0.1µF
–
1/2 VOUT
350Ω LTC1151 AV = 100
–
STRAIN +
1/2 GAUGE
LTC1151
+ 499Ω

0.1µF
–15V

1151 TA04
390Ω

–15V

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Linear Technology Corporation LT 1105 REV A • PRINTED IN USA

12 1630 McCarthy Blvd., Milpitas, CA 95035-7417

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