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FOV-Unit1 xx complete-2

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5 views

FOV-Unit1 xx complete-2

Uploaded by

Harsh Kumar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Transistors

• Transistors can be viewed as electrically controlled switches with a


control terminal and two other terminals that are connected or
disconnected depending on the voltage or current applied to the
control.
• Soon after inventing the point contact transistor, Bell Labs
developed the bipolar junction transistor
• Bipolar transistors were more reliable, less noisy, and more power-
efficient. Early integrated circuits primarily used bipolar transistors.
• Bipolar transistors require a small current into the control (base)
terminal to switch much larger currents between the other two
(emitter and collector) terminal
• The quiescent power dissipated by these base currents, drawn even
when the circuit is not switching, limits the maximum number of
transistors that can be integrated onto a single die
• By the 1960s, Metal Oxide Semiconductor Field Effect Transistors
(MOSFETs) began to enter production.
K.SUJATHA , Associate Professor, BMSCE
MOSFET
• In 1963, Frank Wanlass at Fairchild described the first logic gates using
MOSFETs
• Fairchild’s gates used both nMOS and pMOS transistors, earning the
name Complementary Metal Oxide Semiconductor, or CMOS
• Circuits used discrete transistors but consumed only nanowatts of
power, six orders of magnitude less than their bipolar counterparts
• MOS integrated circuits became attractive for their low cost because
each transistor occupied less area & fabrication process was simpler
• Early commercial processes used only pMOS transistors and suffered
from poor performance, yield, & reliability.
• Processes using nMOS transistors became common in the 1970s
• While the nMOS process was less expensive than CMOS, nMOS logic
gates still consumed power while idle
• CMOS processes were widely adopted & have essentially replaced
nMOS & bipolar processes for nearly all digital logic applications.
K.SUJATHA , Associate Professor, BMSCE
Moore’s Law
• Gordon Moore observed that the Transistor count doubling every
18 months

K.SUJATHA , Associate Professor, BMSCE


MOS Transistor
Metal-Oxide-Semiconductor structure is created by superimposing several
layers of conducting & insulating materials to form a sandwich-like
structure.
These structures are manufactured using a series of chemical processing
steps involving oxidation of the silicon, selective introduction of dopants,
and deposition and etching of metal wires and contacts.
Transistors are built on nearly flawless single crystals of silicon, which
are available as thin flat circular wafers of 15–30 cm in diameter.
 CMOS technology provides two types of transistors: an n-type transistor
(nMOS) and a p-type transistor (pMOS). Transistor operation is controlled
by electric fields so the devices are also called Metal Oxide Semiconductor
Field Effect Transistors (MOSFETs) or simply FETs.

K.SUJATHA , Associate Professor, BMSCE


MOSFET as Switches
 MOSFET: Metal-Oxide-Semiconductor
Field-Effect Transistor

 nFET: an n-channel MOSFET that uses


negatively charged electrons for electrical
current flow

(a) nFET symbol


 pFET: a p-channel MOSFET that uses
positive charges for current flow

 In many ways, MOSFETs behave like the


idealized switches
(b) pFET symbol
 The voltage applied to the gate determines
the current flow between the source and Figure 2.9 Symbols used
for nFETs and pFETs
drain terminals BMS College of Engineering-KS

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