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VLSI Technology

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laxmi kumre
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10 views

VLSI Technology

Uploaded by

laxmi kumre
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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LIST OF PROGRAMME ELECTIVES (GROUP A)

FOR 3rd YEAR


Name of Program B. Tech Semester Year 3rd/4th
V/VI/VII/VIII
Name of Course VLSI Technology

Course Code ECE 351

Core / Elective / Other Elective

Prerequisite:
1. The students are well versed with the fundamentals of CMOS Design
2. The students are well versed with the fundamentals layout rules.
Course Outcomes:
1. Students will be able to understand mechanism of wafer preparation.

2. Able to demonstrate working of various equipment’s for fabrication


techniques.

3. Able to describe models of processes like epitaxy, diffusion, oxidation,


etching etch & their dependence on various parameters.

4. To provide knowledge of various material deposition techniques and


electronic/VLSI device

5. Understand the fabrication process of IC technology.

Description of Contents in brief:


Introduction to VLSI Technology: Classification of ICs, features of ICs ,
monolithic and hybrid ICs. Crystal Growth and Wafer Preparation: silicon
crystal growth from the melt, crystal orientations, various defects in crystal,
wafer preparation and wafer specifications. Epitaxy: Epitaxy and its concepts,
growth kinetics of epitaxy, vapour phase epitaxy, molecular beam epitaxy.
Oxidation: Theory of growth of silicon dioxide layer, calculation of SiO2
thickness and oxidation kinetics. Lithography- Photolithography and pattern
transfer, optical and electron photolithography, X-ray and ion beam
lithography. photoresist, types of photoresist. Etching- dry & wet etching.
Diffusion Process- Diffusion in solids, diffusion equation and diffusion
mechanisms. Ion implantation- Implantation equipments, high energy
implantation, scattering phenomenon, range of implanted ions, implantation
damage, annealing. Metallization- Metallization applications, metallization
choices, physical vapour deposition, patterning & problems in metallization.
Thick and thin film deposition. VLSI process integration – NMOS, CMOS,
BJT. Assembly techniques, packing of VLSI devices.
List of Text Books:
1. S.K. Ghandhi, “VLSI Fabrication Principles”, John Wiley Inc.

2. S.M. Sze,”VLSI Technology”, McGraw Hill.


List of Reference Books:
1. C.Y. Chang and S.M.Sze ,”ULSI Technology”, McGraw Hill.

2. James D. Plummer, “Silicon VLSI Technology: Fundamentals, Practice and


Modeling”, Pearson Education.

Lecture Plan (about 40-50 Lectures):


Lecture No. Topic
1. Introduction to VLSI Technology: Classification of ICs.

2. Features of ICs , monolithic and hybrid ICs.


3. Refining of Silicon for Crystal Growth.
4. Refining of Silicon for Crystal Growth contd...
5. Wafer Preparation.
6. Wafer Preparation contd...
7. Crystal orientation.
8. Defects in crystal.
9. Epitaxy: Epitaxy and its concepts.
10. Growth kinetics of epitaxy.
11. Vapour phase epitaxy.
12. Molecular beam epitaxy.
13. Oxidation: Theory of growth of silicon dioxide layer.
14. Calculation of SiO2 thickness.
15. Oxidation kinetics.
16. Lithography- Photolithography and pattern transfer.
17. Optical photolithography
18. Electron photolithography.
19. X-ray and ion beam lithography.
20. Types of photoresist.
21. Etching- dry etching.
22. Wet etching.
23. Diffusion Process.
24. Diffusion in solids.
25. Diffusion equation and diffusion mechanisms.
26. Diffusion equation and diffusion mechanismscontd....
27. Implantation equipments.
28. High energy implantation
29. Scattering phenomenon
30. Range theory of implanted ions.
31. Implantation damage.
32. Annealing.
33. Metallization- Metallization applications
34. Metallization choices.
35. Physical vapour deposition.
36. Patterning & problems in metallization.
37. Thick film deposition.

38. Thin film deposition.

39. VLSI process integration – NMOS, CMOS, BJT.

40. VLSI process integration –BJT.


41. Assembly techniques.
42. Packing of VLSI devices.

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