The Separation of ColdWork Distortion and Particle Size Broadening in XRay

Patterns
B. E. Warren and B. L. Averbach

Citation: Journal of Applied Physics 23, 497 (1952); doi: 10.1063/1.1702234

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 JOURNAL OF APPLIED PHYSICS VOLUME 23, NUMBER 4 APRIL, 1952

,° 1 ~~9~i
1
Letters to the Editor 4
0. 1

.8L---~----~----~--~----~.
o 20 40 60 80 100
The Separation of Cold-Work Distortion and
Particle Size Broadening in X-Ray Patterns* FIG. 2. Plot of An P vs L for single crystal of Cu -2 percent Si rolled to
B. E. WARREN Al'oD B. L. AVER BACH 50 percent reduction. The slope gives an average particle dimension
Massachusetts Institute of Technology, Cambridge, Massachusetts r.=1000A.
(Received January 28, 1952)

OR a cubic crystal it is always possible to choose orthogonal independent of l. For small I, and small values of n where Z" is
F axes so as to make any reflection have the indices (001), It
has been shown,! that for either distortion broadening or particle
also small, (cos2 ...lZ,,) can be approximated by an exponential.
A nD(l) = (cos2 ...lZn)AV->exp[ - 2rl2(Z,,2)Avl
size broadening, the shape of the diffraction peak can be repre-
Writing (2) in logarithmic form
sented by a Fourier series.
+00 (3)
P2e=K ~n An(l) cos2 ...nh 3 , (1) For several orders of a particular set of planes, a plot of InAn(l) vs [2
gives a curve which is a straight line for the small values of l. The
where 113= 2a, sinOjA intercept on the axis of ordinates gives InAnP, and the slope gives
-2 ...2(Zn2)Av from which the mean square strain can be computed.
for distortion A .D(l) = (cos2 ...IZ,,)Av,
This method of separating the two effects is completely general in
1 00
that it does not involve any assumption about the shape of the
for particle size AnP=-N ~ (i-Inllni.
i-I·IH peaks. For orders of the general plane (hkl) of a cubic crystal, it is
convenient to express AnD(l) as exp[ -2rl02(6.£2)/a2], where
If both types of broadening are present, the measured coefficien t
l02=h'+k 2 +[2, L=na. and 6.L=a zZ".
is the product of the coefficients for each effecU
Figure 1 is a plot oflnA .(lo) vs 102 for the first five orders of (111),
(2) measured on a single crystal of Cu-2 percent Si which has been
rolled on the 110 plane in the 112 direction to 50 percent reduction.
If measurements are made for several orders of (OOl), the two The fact that the curves do not extrapolate to InA'I(lo)=O.O,
effects can be separated, since the distortion coefficient A nD(I) indicates that a small part of the broadening is due to particle size.
depends upon the order, \"hile the particle size coefficient A n P is The values of A "P obtained from the intercepts are plotted against
L= na3 in Fig. 2. The negative slope of this line is the reciprocal of
the average particle dimension perpendicular to the reflecting
60 80 100 planes. The value obtained, £= 1000A, indicates that in the
deforming of the crystal by rolling, the major part of the broaden-
ing is due to distortion, and the broadening by particle size is
small but not small enough to neglect.
*
Research sponsored by the AEC under Contracts AT(30-I)-S58 and
AT(30-1) 1002.
lB. E. Warren and B. L. Averbach, J. App!. Phys. 21, 595 (1950).
, This fact has been pointed out independently by A. J. C. Wilson and
50 E. W. Hart.

•I

Current-Carrying Wire Loops in a Simple

Inhomogeneous Region
JAMES R. WAIT*
75 Newmont Exploration Limited, Jerome, Arizona
o (Received January 17, 1952)
't
c:
<[
c
-2
T HE electromagnetic fields of a small current-carrying insu-
lated wire loop situated in the plane of separation between
two dissipative media will be calculated. The loop will be situated
't
at the origin of cylindrical coordinates (p, <p, z) with the axis of the
loop oriented in the z direction. The plane of separation is at Z= O.
The formal solution for this problem has been given by
Sommerfeld' for the case of a harmonically time-varying current.
His result can be conveniently written in terms of electric vector
potentials F, and F 2, as defined by Schelkunoff,2 with a z com-
ponent only, for the upper and lower regions, respectively. The
upper and lower media are characterized by electrical constants
0"1, EI, 11-0 and 0"2, '2, 11-0, respectively. The time factor exp(iwt) is to
be employed throughout. The mks system of units is used. The
poten tials are
F , =IMil1-ow f",V o(}..p)exP (-u 2z)dA (I)
100 2....1 0 U,+U2
and
FIG. 1. Plot of InA.(lo) vs 10' for first five orders of (111), measured on a
single crystal of eu - 2 percent Si which has been rolled to SO percent re- (2)
duction. lo'=h'+k'+l' and n is expressed in terms of L =na •.
497
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 498 LETTERS TO THE EDITOR

where The mutual impedance between the loops is then given by

Ul = (X'+'Yl·)t, U,= (X'+'Y,·)t, Z=e/I.
'Yl'=iIT1J.lOW- EIJ.lOW'
and An expression is thus available which enables one to calculate
'Y,2 = iIT2J.10W - E'J.lOW!. the steady-state mutual impedance of two small wire loops con-
tained in the plane of separation between two generally dissipative
The current in the loop of area OA is given by I. The fields are then media. Such a physical situation could be represented by the
related to the potentials F i by the following: earth's surface where the upper medium becomes nondissipative.

E IP = a;;
aF,. 82)Fi,
, 1J.1owH.= ( -'Yi'+ az' Another situation might arise when the loops were lying on the
floor of the ocean. Both media can then be highly dissipative.
The author appreciates the permission granted by Dr. A. A.
. a'F. Brant of Newmont Exploration Limited to publish this note.
1J.1owH p=--, and HIP=Ep=E.=O. (3)
dPdZ
* Research Engineer.
The subscript i here takes the value 1 or 2 to pertain to the upper A. Sommerfeld, Ann. Physik 81, 113,5 (1926),
1
• S. A. Schelkunoff, Electromagnetic Waves (D. Van Nostrand Company,
or lower region, respectively. Inc .. New York, 1943), p. 128.
The integral involved in the expressions for E\ and p, will be • R. M. Foster, Bell System Tech. J. 10, No.3, 408 (1931).
evaluated for the case when z=O. The common vector potential is
now designated by P,
p=lOAiJ.Low.r:Vo(XP)d,,". (4)
2". 0 Ul+U, A Study of Oxide-Coated Cathode by X-Ray
On multiplying the numerator and denominator by (Ul-U,) the Diffraction Method
expression for F becomes
F= iJ.LowlOA
2".
[.r: Xutfo(,,"p)dX2
0 ('Yl'-'Y2 )
.r: xu,Jo(XP)dX].
0 ('Yl'-'Y.')
(5)
Elso VAMAKA
The Electrical Communication Laboratory, Tokyo, Japan
(Received October 29, 1951)

N a preceding letter,! measurements of the crystal growth of

The numerator and denominator of the first expression is multi-
plied by X+Ul and in the second expression by X+U2. The result is I (BaSr)O (Ba 50 percent, Sr 50 percent) through heat treatment
by the x-ray diffraction method were reported.' Recently, by the
F
iJ.LowlOA [l,ro Jo (XP)XdX
1'1' 'Y,
'J:Jo(Xp)XdX]
.
(6) same method, we have measured the crystal growth of BaO and
(BaSrCa)O (Ba 47 percent, Sr 43 percent, Ca 10 percent). The
2"'('Yl'-'Y,') 0 ,,"+Ul 0 X+U2
results obtained are shown in Fig. 1. Each curve is a typical one of
These integrals have been evaluated by Foster3 and are of the
a few samples. In contrast with (BaSr)O, BaO grows quickly and
following type, above 1025°C, it reaches about one thousand angstroms. On the
{""Jo(,,"p)Xd,," 1 [1-(I+'YiP)e-'YiP]. (7) other hand, (BaSrCa)O grows slowly to about 1100°C; above
J0 X+Ui 'Yi'p3 l100°C the line breadth of the diffracted x-ray beam becomes
broader because of the preferential evaporation of BaO from the
Finally, the expression for F can he written, surface of the cathode and the decomposition of the Debye-
iJ.lowlOA Sherrer line of (BaSrCa)O into the lines of SrO and (BaSrCa)O.
F [(I+'Y1P)e-"Y 1P-(I+'Y2P)e - ]
"y,p • (8)
The relation between the crystal size of BaD and its thermionic
2".( 'Y1 2- 'Y2 2) p'
emission is shown in Fig. 2. To study the variation of emission due
The electric field component EIP in the plane of separation (i.e., to the crystal growth only, pure electrolyt nickel sleeves were used .
.z=O) is then, In this case heat activation will be dominant and impurity
aF iJ.LowlliA activation be small. Now, No, the number of activation centers, is
E [(3+3'Y2P+'Y2'p')e-)"P given as follows in our case;
IP ap 2... ('Y1 2- 'Y22)p4
- (3+3-rlP+'Y1 2p2)e-"Y1PJ (9) No(T) =C exp( -E(L(T)/kT) = C exp( -E(T)/kT),
An expression for the vertical magnetic field component at the where C is a constant and E is the activation energy of the im-
plane of separation can also be found. The field II z is given purity center. Kawamura et al'>, 4 concluded from their experiments
everywhere by that E is 4.4 ev for small crystals and 5.4 ev for large crystals. If
a'F'
iJ.LowH.= -'Yi 2Fi+ az:' (10)

Now F. satisfies the inhomogeneous wave equation in all tbe

source free regions, that is Q) ~DO
N
1 a ( aFi) (J2Fi (11)
- - p - -'Yi'F.+--=O \II
pap ap az'
600
for axial symmetry. The field H. can then be written o.J
n1
. 1
1J.LowII.= -~ a;,a( P"ii;
aF.)
. (12) ~ /fOO
~
The differentiations of F can now be carried out to yield U
20C
IliA [(9+9'YIP+4'Yl'P'+'Y1 3p3)e-"Y1P
2".( 'Y12- 'Y,2)p.
- (9+9'Y2P+4'Y,'P'+ 'Y,3p3) e-"Y2PJ (13) °c
'ioo 950 1000 1050 If 00 /1 SO
The open-circuit voltage induced in a similar single-turn loop of
area oB whose plane is also in the plane of separation is given by T-rea.i-tne nt -temperatu.r-e.
e= -iJ.LowoBH •. FIG. 1. Crystal size .. treatment-temperature in BaO, (BaSr)O(BaSrCa)O.

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