CS/B.
TECH(N)/ODD/SEM-3/3460/2022-2023/I123
MAULANA ABUL KALAM AZAD UNIVERSITY OF TECHNOLOGY, WEST BENGAL
Paper Code : EC301 Electronic Devices
UPID : 003460
Time Allotted : 3 Hours Full Marks :70
The Figures in the margin indicate full marks.
Candidate are required to give their answers in their own words as far as practicable
Group-A (Very Short Answer Type Question)
1. Answer any ten of the following : [ 1 x 10 = 10 ]
(I) Which depletion layer of a BJT is wider?
(II) The speed of switching is ________ in MOSFETs.
(III) Absorption coefficient of a semiconductor is a strong function of _____________________________
(IV) Ionic and covalent bonding are generally __________________ than metallic bonding
(V) Total potential barrier of a pn junction diode is reduced in ____________ mode
(VI) Which region of a BJT is most heavily doped?
(VII) ________________ is the highest filled energy level of the electron at 0K.
(VIII) In a Schottky diode, normally __________ charged donor atoms remain in the space charge region.
(IX) Write the range of values for Common-Base current gain α.
(X) In which MOSFET the channel becomes depleted of majority carriers for –VGS?
(XI) How the slope of the current–voltage characteristic of a pn diode is related to the small signal model of the same?
(XII) What is Early effect?
Group-B (Short Answer Type Question)
Answer any three of the following [ 5 x 3 = 15 ]
2. Explain the current density for an ideal pn junction and derive it equations. [5]
3. Draw the output characteristics of a transistor in common emitter (CE) mode. Show the different regions on the [5]
output characteristics. Write the name/s of the region/s in which the transistor can be used as an amplifier and the
corresponding biasing conditions.
4. Describe the process of formation of energy bands in crystals. [5]
5. From the one dimensional Poisson’s equation for electric field E, obtain the expression for E in the n region of a [5]
schottky diode.
6. Draw the energy-band diagram in a p-type semiconductor at the threshold inversion point and explain the [5]
formation of the inversion layer in the MOS capacitor.
Group-C (Long Answer Type Question)
Answer any three of the following [ 15 x 3 = 45 ]
7. (a) Derive the expression for total drift current density in a semiconductor. [5]
(b) What are mobility and conductivity? Write the effects of temperature and doping on mobility. [5]
(c) Derive the one dimensional continuity equation for holes in a semiconductor. [5]
8. (a) Draw the ideal energy-band diagram of a pn junction under no bias, forward bias and reverse bias. Explain all [ 3+4+4 ]
the energy band diagrams.
(b) Draw the ideal energy-band diagram of a metal–semiconductor junction under forward bias. Write the [4]
advantage of Schottky diodes.
9. (a) Write the differences between zener breakdown and avalanche breakdown. [6]
(b) Draw the circuit diagram of a simple voltage regulator circuit using a zener diode and explain how the [5]
regulation is obtained against variation in load current.
(c) Describe the planar process for formation of a pn junction diode. [4]
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10. (a) Draw the circuit diagrams for obtaining the input and output characteristics of an npn transistor in common [ 4+5 ]
emitter (CE) mode. Discuss the steps to operate those circuits and plot the characteristics.
(b) What are the current gains of a transistor? Derive the relation between them. [6]
11. (a) Derive and explain the expressions for excess minority carriers in a pn junction as functions of distance. [5]
(b) From the expression for built in potential of a pn junction diode find the expression for width of the space [5]
charge region under reverse bias.
(c) Consider a silicon pn diode at T=300 K with doping concentrations of Na=1016 cm-3 and Nd=1015 cm-3. [5]
Calculate the space charge width and electric field in the same.
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