1

KVS HYDERABAD REGION

CLASS-XII PHYSICS MODEL PAPER-14 (2024-2025)
MARKING SCHEME
SECTION A Marks
1 (c) When the proton moves at 45° with vertical, 1
qE=mg
q.(X/d) = mg
1.6 × 10-9 × (X/0.01) = 1.6 X 10-27 X 10
X = 1× 10-9 V

2 (a) For the two capacitors connected in parallel, 1

V₁ = V2
C1/q1 = C2/q2 or
q1/q2 = C1/C2
3 (b) 1

4 (d) 1
5 d) ) 1
6 (c) gather lighter and for high resolution 1
7 (b) Susceptibility of a ferromagnetic material decreases with the increase in temperature 1
and above the Curie temperature TC, it becomes paramagnetic.
8 (a) 1.0 mA 1
9 (c) Resonance frequency fr=1 / *2π√(LC)+ 1
when C is changed to 2C, L should be changed to L/2 so that f r, remains unchanged
10 The frequency of the e.m. wave remains same when it passes from one medium to 1
another.
Refractive index of the medium, n = √(ε/ε0)=√(4/1)= 2
Wavelength of the electromagnetic wave in the medium. λmed =λ/n = λ/2.
11 (a) Wo= hc/ λ0 = (6.63×10-34×3×108 ) / (5000 × 10-10 )J 1
= 4 × 10-19 J.
12 (b) Energy released, 1
=2B.E(2He4 )-B.E(1H1+ 3Li7 ) =2x4x7.06-[0+7x 5.60] =56.48-39.20 = 17.28 MeV.
13 A) Both A and R are true and R is the correct explanation of A 1
14 D) Both the assertion and reason are false. Resistivity of a semiconductor decreases with 1
temperature. Larger amplitudes of atoms at higher temperatures increase conductivity of
a semiconductor.
15 (C) For an incident photon of given energy, velocity of photoelectron ejected from near 1
the surface is larger than that coming from the interior of the metal because less energy is
required to eject an electron from the surface than from the interior. The velocity of
ejected electron may not be zero.
16 (A) Both are correct and reason is correct explanation of assertion 1
SECTION - B
17 (i) microwaves (ii) Ultra violet rays 1+1
 2

18 1-+1

19 2

20 From mirror formula,1/v = 1/f – 1/u , Now for a concave mirror, f < 0 and for an object 2
at u < 0, 2f<u , 1/u >1/f 1/2f < 1/v < 0
This implies that v < 0 so that image is formed on left.
Also the above inequality implies 2f>v OR ∣ 2 f ∣< ∣v∣ [2f and v are negative] i.e., the real
image is formed beyond 2f.
21 Drift speed in B is higher. Since the two bars are connected in series, the current through 1+1
both same.
I = neAvd , vd α 1/n. Since n is much lower in semiconductors, drift velocity will be more.
OR

The energy gap does not change with temperature

SECTION C
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22

1
23

1
1
1
24 Statement of Faraday’s law 1
Emf induced = ½ BR2ω 1
B = 1T, R = L = 1m, ω = 2πv = 2π x 50 = 100π 1
emf = ½ x 1x 12 x 2π x 50 = 50π = 157V
25 1

K max = hv – Ф0 1
Slope of the graph gives the value of Planck’s constant
Intercept on the negative Y axis gives the value of work function
(OR)
Ф0 = 2.14eV, v = 6 x 1014Hz 1
1.K max = hv – Ф0 = 0.34eV 1
2.Kmax = eV0
V 0 = 0.34V 1
3.Kmax = ½ m v2max
v 2max = 345.8 x 103 m/s
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26

K = 7.7MeV = 7.7 x 106 x 1.6 x 10-19

1
K = Ze x 2e / 4πϵ0 r0
1
Substituting, r0 = 30fm
27 Correct explanation & expression β = 2D /d 2+1
28 (a) When nucleons approach each other to form a nucleus, they strongly attract each 1
other. Their potential energy decreases and becomes negative. It is this potential 1
energy which holds the nucleons together in the nucleus. The decrease in’
potential energy results in the decrease in the mass of the nucleons inside the
nucleus.
(b) 1

SECTION D
29 (i) (a)
(ii) (a)
(iii) (d)
(iv) (b)
(v) (c)
30 (i) b
(ii) a
(iii) c
(iv) b
(v) c
SECTION E
31 a. Derivation of expression for electric field 2
b.

1
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c)

F = q1 q2 / 4πϵ0r 2
F1 = 57.6N along AD produced
F2 = 28.8N along BD produced
F3 = 57.6N along CD produced 3
Resultant of F1 and F3 is 81.5N
Total force on q4 = 28.8 + 81.5 =110.3 N along BD produced 2
OR
a. Expression for electric field
b. ФE = Net charge enclosed / ϵ0
= -2Q/ ϵ0
32 1

2
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1
1

1
1
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33 1