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Solr202301026 Sup 0001 Suppdata s1

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13 views6 pages

Solr202301026 Sup 0001 Suppdata s1

Uploaded by

sanjidul1200
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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Supporting Information

Solution-Processed Bifacial Cu(In, Ga)(S, Se)2 Thin Film Solar

Cells with a Frontside Power Efficiency of 9.73%

Chenxi Zhao, Bowen Liu, Fuyan Chen, Jiaxin Gao, Xinan Shi,* and Daocheng Pan*

State Key Laboratory of Featured Metal Materials and Life-cycle Safety for Composite
Structures; Guangxi Key Laboratory of Processing for Non-ferrous Metals and
Featured Materials; MOE Key Laboratory of New Processing Technology for
Nonferrous Metals and Materials; School of Resources, Environment and Materials,
Guangxi University, Nanning 530004, China

*E-mail: [email protected] and [email protected]

Before After

FTO

ITO

Figure S1. Photograph of plain FTO (a and b) and ITO (c and d) electrodes before (a

and c) and after (b and d) the selenization at 530oC for 15 min.

1
FTO-Before FTO-After

ITO-Before ITO-After

Figure S2. The sheet resistance measurements of plain FTO (a and b) and ITO (c and

d) electrodes before (a and c) and after (b and d) the selenization at 530oC for 15 min.

2
40
Current density (mA/cm2)

30

20 0nm MoO3
10nm MoO3
15nm MoO3
10 20nm MoO3
25nm MoO3

0
0.0 0.1 0.2 0.3 0.4 0.5
Voltage (V)

Figure S3. J-V curves of the best CIGSSe solar cell device on FTO substrate

incorporated with 0, 10, 15, 20 or 25 nm MoO3 interface layer.

3
40
Current density (mA/cm2)

30

PCE=14.83%
20
VOC=0.59 mV
JSC=35.81 mA/cm2
10 FF=69.71%

0
0.0 0.1 0.2 0.3 0.4 0.5 0.6
Voltage (V)

Figure S4. I-V curve and the correspoding photovoltaic parameters of the best spin-

coated CIGSSe solar cell on Mo electrode.

4
1.0 40
34.66 mA/cm2

Intengrated Jsc (mA/cm2)


0.8
30
Eg=1.11 eV
0.6 Frontside
EQE

20
0.4

Rearside 10
0.2 5.1

0.0 0
400 600 800 1000 1200
Wavelength (nm)

Figure S5. EQE and integrated Jsc curves as well as the band gap of CIGSSe solar cell

mearusred from the frontside and the rearside.

5
Table S1. The photovoltaic parameters of the best CIGSSe solar cell devices
with/without MoO3 interface layer.

JSC VOC FF η n J0 RS RSH


MoO3(nm)
(mA/cm2) (V) (%) (%) (A/cm2) (Ω·cm2) (Ω·cm2)
0 33.82 0.47 41.6 6.64 3.53 3.75×10-5 3.88 95
20 34.4 0.51 55.8 9.73 2.45 3.41×10-6 1.38 235

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