2.5KVA Pure Sine Wave Power Inverter For Hazardous Environment
2.5KVA Pure Sine Wave Power Inverter For Hazardous Environment
Development, simulation and implementation of a 2.5KVA pure sine wave power inverter for
hazardous environment
Andrew Osemare Okhueleigbe1, Emmanuel Ighodalo Okhueleigbe2
1
Technical Department (Supply Chain), Nigeria Breweries PLC, Nigeria
2
Department of Electrical /Electronic Engineering, Federal University of Petroleum Resources Effurun, Delta State, Nigeria
Abstract
The aim of this paper is based on development, simulation and implementation of a 2.5KVA pure sine wave power inverter for
hazardous environment. This system converts 24V DC voltage from a battery source to 230V AC at a frequency of 50Hz. The
output voltage is regulated so as to keep the output voltage constant as battery voltage decreases, as load demand increases the
inverter stops operation when the battery voltage goes bellow 21V. This work was realized by programming a PIC18f2550
microcontroller chip to produce a SPWM which is used to drive the gates of a MOSFET H-BRIDGE to invert the DC voltage from
the battery to a 24V AC voltage output. The 24V AC output is then passed through a power transformer to realize the 230V AC
output. The microcontroller chip was programmed to perform all the auxiliary functions such as low battery cut-off, over-load
protection and control of the inverter LCD display. The PIC16F873A chip was also programmed to display the state of the inverter
in every operating mode. The system was constructed and tested by connecting a 24V DC battery to the inverter input, and the
inverter gave 230 VAC at the output. Various load ability test was carried out to a load capacity of 2.7 KVA this load were
connected to the output, it was also observed that at 21V DC, the output supply was cut-off in other to protect the battery from
deep discharge.
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International Journal of Advanced Engineering and Technology
The method employed in this paper, was first programing a of a full H-bridge configuration in other to enable an
microcontroller to generate four control signal (two sinusoidal alternating voltage to flow in the low voltage winding of a
pulse width modulating SPWM signal and two other step up transformer to obtain 230V AC the output voltage is
complimentary square wave signal) and then MOSFET driver fed back to the micro controller to adjust the duty cycle of the
was used to amplify the power of the signals. The four control SPWM signal for voltage regulation of the output. The block
signals from the MOSFET driver are used to switch the gates diagram of the inverter is as shown below in figure1
3. Theory and Calculations used to produce the other two complimentary signals. For the
3.1 Oscillation Unit production of the SPWM signals, 32 samples were used for
A PIC 18F2550 micro controller was chosen for generation of this project simulate half cycle of sinusoidal wave. For
SPWM signal. The PORT C of this microcontroller has 2 calculating the value of the duty cycle for the samples, the
outputs that produce PWM, while another PORT could be formula 𝑜𝑓 𝑡ℎ𝑒 𝑐𝑜𝑟𝑟𝑒𝑠𝑝𝑜𝑛𝑑𝑖𝑛𝑔 𝑎𝑛𝑔𝑙𝑒 × 𝑚𝑎𝑥𝑖𝑚𝑢𝑚 𝑑𝑢𝑡𝑦
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𝑐𝑦𝑐𝑙𝑒; i.e. duty cycle The software PWM created uses the delay function in the
microC compiler, to get a frequency of 50Hz by making a pin
𝐷 = 250𝑠𝑖𝑛𝑤𝑡 = 250sin (𝑛𝛥𝜃) 1
of the microcontroller to remain high during the period of
Where sampling the half wave and then goes off, while another pin
D is duty cycle goes high during the remaining half cycle.
n - number of samples
𝛥𝜃 - angle (Period of sine wave) =
250 is the maximum duty cycle.
n = 0,1,2,3,…,32 = 0.02s 3
o
2 For a half cycle = = 0.01s 4
The corresponding angles are gotten by dividing the angle for
one half cycle by total number of samples (32).
5
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PIC18F2550 has RISC Harvard architecture. Harvard appliances to industrial instruments, remote sensors, electrical
architecture is a newer concept than von Neumann. It rose out door locks and safety devices. It is also ideal for smart cards
of the need to speed up the work of a microcontroller. In as well as for battery-supplied devices because of its low
Harvard architecture data bus and address bus are separate. power consumption
Thus a greater flow of data is possible through the central So Fig. 4 and figure 5 shows the flow chart of SPWM signal
processing unit and of course a greater speed of work (A. generation and control and display respectively. In figure 4
Mamun et al, 2013). Separating a program from data memory flow chart “initialize variables” means initialize the user
makes it further possible for instructions not to have to be 8- defined memory cell; “initialize port” initializes the ports in
bits for instructions which allows for all instructions to be one software by which the ports work as output ports. After that
word instructions. It is also typical for Harvard architecture to “Initialize PCPWM” initializes the modules which are used to
have fewer instructions than von-Neumann's, and to have generate PWM. Then’s et al., interrupts” initializes all
instructions usually executed in one cycle. Microcontrollers interrupts which are associated with all kinds of desired
with Harvard architecture are also called "RISC interrupts. Then
microcontrollers". Fig.3 presents the internal block of the “Initialize Sine Look up Table” stores the sampling value of
PIC18F2550. RISC stands for Reduced Instruction Set sine wave. Those sampling value will go in PDC register. And
Computer. Microcontrollers with von-Neumann's architecture the PTMR register will generate the Triangular wave. Then
are called 'CISC microcontrollers', which stands for Complex the signal becomes Sinusoidal PWM signal with dead time.
Instruction Set Computer. PIC18F2550 is a RISC The microcontroller checks whether the generation is
microcontroller that means it has a reduced set of instructions; completed or not, if yes, take another sampling of the sine
more precisely 35 instructions. PIC18F2550 perfectly fits wave table, if not, it waits until completion (A. Mamun et al
many uses, from automotive industries and controlling home 2013).
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3.3 MOSFET Driver and H-Bridge Circuit MOSFET driver operates from a signal input given from the
MOSFET Driver microcontroller and takes its power from the battery voltage
For the MOSFET switch to be turned on the voltage at the supply that the system uses. The driver is capable of operating
gate terminal must be 10V higher than the drain terminal both the high side and low side MOSFET, but in order to get
voltage. The drain of the high side device is connected to 24V the extra 10V for the high side device, an external bootstrap
DC power which is to be inverted into the 230V AC power. capacitor is charged through a diode from the 18V power
This is a problem because the 24V is the highest voltage in the supply when the device is off. Because the power for the
system therefore, to drive MOSFETs in the H-Bridge, driver is supplied from the low voltage source, the power
MOSFET driver IC is used with a bootstrap capacitor consumed to drive the gate is small. When the driver is given
specifically designed for driving a half-bridge. For this design the signal to turn on the high side device, the gate of the
the IR2110 MOSFET driver was chosen, it is rated at 600V, MOSFET has an extra boost in charge from the bootstrap
with a gate driving current of 2A and a gate driving voltage of capacitor, surpassing the needed 10V to activate the device
10-20V. The turn on and turn off times are 120ns. The and turning the switch on.
Fig 6: IR 2110 connection with high side left and low side left (half) H-Bridge source (IR 2110 data sheet retrieve from
www.datasheetcatalog.com).
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Bootstrap Capacitor in the specific circuit and is about equal to the voltage across
The bootstrap diode and capacitor are the only external the power rail. The current rating of the diode is the product of
components strictly required for operation in a standard PWM gate charge times switching frequency. The high temperature
application. Local decoupling capacitors on the VCC (and reverse leakage characteristic of this diode can be an
digital) supply are useful in practice to compensate for the important parameter in those applications where the capacitor
inductance of the supply lines. has to hold the charge for a prolonged period of time. For the
The voltage seen by the bootstrap capacitor is the VCC supply same reason it is important that this diode have an ultra-fast
only. Its capacitance is determined by the following recovery to reduce the amount of charge that is fed back from
constraints: the bootstrap capacitor into the supply.
1. Gate voltage required to enhance MGT In order to improve decoupling a decoupling capacitors has to
2. IQBS - quiescent current for the high-side driver circuitry be connected directly across the VCC and COM pins as
3. Currents within the level shifter of the control IC shown in figure 12. The diode chosen for this design is the
4. MGT gate-source forward leakage current In4148 diode which meets the specifications given above.
5. Bootstrap capacitor leakage current
H-Bridge MOSFET Selection
Factor 5 is only relevant if the bootstrap capacitor is an The number of MOSFET in each side of the H-bridge required
electrolytic capacitor, and can be ignored if other types of for the inverter is calculated by computing the maximum
capacitor are used. Therefore, it was ignored since only non- current Imax required which is given by
electrolytic capacitors were used.
The minimum bootstrap capacitor value was calculated from
the following equation: I 3.12
Where:
I A
Qg = Gate charge of high-side FET = 63nC f = frequency of
operation = 3200Hz
ICbs (leak) = bootstrap capacitor leakage current = 250μA Number of MOSFET = = 2.5 3.13
Iqbs (max) = Maximum VBS quiescent current = 230μA
VCC = Logic section voltage source = 24V Number of MOSFET on each side of the H-bridge
Vf = Forward voltage drop across the bootstrap diode = 0.4V approximately = 3 MOSFETs
VLS = Voltage drop across the low-side FET = 1.8V In the H-bridge design 3 MOSFETs are used on each side of
VMin = Minimum voltage between VB and VS = 10V the bridge therefore bringing it all to a total of 3 x4 = 12
Qls = level shift charge required per cycle (typically 5nC for MOSFETs.
500 V/600 V MGDs and 20nC for 1200 V MGDs) So each side of the bridge is able to conduct at least a
The values substituted into this equation were found either in maximum current of 125A required for maximum power of
driver datasheet for IR2110 IC or IRFP260N MOSFET 2.5KVA, for this design the MOSFET Irfp260n was chosen,
datasheet. Using these numbers minimum bootstrap having a maximum rating of 50A. three of the MOSFETs
capacitance value was calculated as where paralleled together on each side, so that the input
capacity is now 150A. This is enough to handle the current
sufficiently.
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Turns per volt = 1⁄(4.44 × 10−4 × 57.6 × 1.3 × 50) = ⁄1.66 = 0.6
Fig 7: h- bridge dc link capacitor and MOSFET driver circuite drawn
with protcus
Primary winding current = A
Fig 8: DC link capacitor and H- bridge circuit. Secondary number of turns = 0.6 × 230 = 138 turns
TPV = Fc
Where
Primary winding current = Fc – cutoff frequency
L – secondary winding inductance
C – shunt capacitor
Number of turns = TPV × primary volts Since the secondary side of the transformer has an inductance
Primary winding area = 𝑛𝑢𝑚𝑏𝑒𝑟 𝑜𝑓 𝑡𝑢𝑟𝑛𝑠⁄𝑡𝑢𝑟𝑛𝑠 𝑝𝑒𝑟 𝑠𝑞. 𝑐𝑚 all that was needed was just a shunt capacitor. From the earlier
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Hence the minimum capacitor value needed for the low pass
filter is given by;
C µ
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5. Conclusion
The design and construction of a 2.5KVA inverter system
with output voltage regulated is presented with a unique
design constraint that does not only focus attention on
availability and stability of electrical energy delivered to the
load in an event of public utility failure, but incorporate
algorithm for regulating the output voltage with varying
battery voltage and load which make it more unique as
compare to other power inverter available in the market.
In this article, I presented switch mode power supply (SMPS)
using sinusoidal pulse width modulation (SPWM) technology.
From the test carried out and results obtained, the system had
performed to the desired design specification. Hence, the set
out objectives were realized.
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