B.M.S.

COLLEGE OF ENGINEERING, BANGALORE-19

(Autonomous Institute, Affiliated to VTU)
Department of Physics
THIRD INTERNALS (CIE-III)
Course Code : 22PH1BSPEE Course Title : APPLIED PHYSICS FOR ELECTRICAL STREAM

Semester : I Maximum Marks: 40 Date: 29-01-2025

Faculty Handling the Course: BLS, MVM and Time: 9.30 AM - 10.45 AM
VM
Instructions: Answer all the questions compulsorily.
Avail either –or choice only in question 2
Physical constants:
Mass of electron, me = 9.1x10-31 kg Speed of light, c = 3x108 m/s
Electronic charge, e = 1.602x10-19 C Planck constant, h = 6.626x10-34 Js
Boltzmann constant, kB = 1.38x10-23 J/K Mass of neutron, mn= 1.67x10-27 kg
Permittivity of free space=8.85x10 -12 F/m Mass of proton, mp= 1.67 x 10-27 kg

Q. QUESTIONS CO
Marks
No.
1 Distinguish between soft and hard magnetic materials with characteristic features and PO1
6
applications.
Ans
Hard Magnetic Materials Soft Magnetic Materials

They have very high residual They have very low residual magnetism
1
magnetism and high Coercivity. and small Coercivity.

It retains a strong magnetic field (makes It does not retain a strong magnetic field
2 a good permanent magnet), and is (does not make a good permanent
4
difficult to demagnetize magnet), and is easy to demagnetize

The area enclosed by the B-H curve is The area enclosed by the B-H curve is
3
large, so it has high hysteresis losses small, so it has low hysteresis losses or
or core losses. core losses
4 Susceptibility and permeability are low. Susceptibility and permeability are high.

5 Magnetic energy stored is high Magnetic energy stored is low

The eddy current loss is less because

6 The eddy current loss is high.
of high resistivity.

Soft magnetic materials are extensively

used in electrical engineering such as for
They are used as permanent magnets
7 making core the electromagnetics, core of
and DC magnets.
electrical machines like transformer,
motor, generator, parts of measuring
devices, etc.
Alloys composed of iron, cobalt and
Iron-silicon alloys, nickel-iron alloy
8 aluminium, Chromium steel, Carbon
and iron, Ferrites etc..
steel etc…
 2

2 Explain Fermi level in both intrinsic and extrinsic semiconductor with neat energy PO1 8
level diagram. Deduce an expression for Fermi energy in intrinsic semiconductor.
Ans Fermi level in intrinsic semiconductor:

The Fermi energy level lies midway between the bottom of conduction band and top of
𝐸 +𝐸
valence band as shown in the first figure.𝐸𝐹 = 𝑣 2 𝑐
Fermi level in extrinsic semiconductor:
(i) Fermi level in extrinsic n type semiconductor material:
At T=0 K, the Fermi level in extrinsic semiconductors for n type, lies little below
conduction band as shown in the figure below:
𝐸𝑑 + 𝐸𝑐
𝐸𝐹 =
2

3
(ii) Fermi level in extrinsic p type semiconductor material:
At T=0 K, the Fermi level in extrinsic semiconductors for p type, lies little below
𝐸 +𝐸
conduction band as shown in the figure below:𝐸𝐹 = 𝐴 2 𝑉
 Expression for Fermi energy in intrinsic semiconductor:

In an intrinsic semiconductor, the concentration of free electrons and holes are equal.
So,
𝐸𝐹 −𝐸𝐶 𝐸𝑣 −𝐸𝐹
𝑁𝑐 𝑒 𝑘𝑇 = 𝑁𝑣 𝑒 𝑘𝑇

𝑁𝑐 𝐸𝑣 −𝐸𝐹 −(𝐸𝐹 −𝐸𝑐 )

= 𝑒 𝑘𝑇 . 𝑒 𝑘𝑇
𝑁𝑣 3
𝐸𝑐 +𝐸𝑣 −2𝐸𝐹
𝑁
Taking log on both sides, 𝑙𝑛 (𝑁𝑐 ) = 𝑒 𝑘𝑇
𝑣
𝑁𝑐
𝐸𝑐 + 𝐸𝑣 − 2𝐸𝐹 = 𝑘𝑇 𝑙𝑛 ( )
𝑁𝑣
𝐸𝑣 + 𝐸𝑐 𝑘𝑇 𝑁𝑐
𝐸𝐹 = − 𝑙𝑛 ( )
2 2 𝑁𝑣
𝑁 𝑁
If the effective mass of electrons and holes are equal, then, 𝑐 = 1 𝑎𝑛𝑑 𝑙𝑛 ( 𝑐 ) = 0
𝑁𝑣 𝑁𝑣
𝐸𝑣 + 𝐸𝑐
𝐸𝐹 =
2

OR
What are ferromagnetic materials? Explain Weiss domain theory of PO1
8
ferromagnetism.

Ans Those substances which are strongly magnetized in the same direction as that of applied
magnetic field and retains its magnetic moment even after the removal of the applied
field are called ferromagnetic materials.
2
• Examples: Iron, cobalt, nickel.

• To explain the phenomenon of ferromagnetism, Weiss 1

proposed a hypothetical concept of ferromagnetic
domains. Weiss theory of ferromagnetism is also called
domain theory of ferromagnetism.
• According to the domain theory, a ferromagnetic
substance consists of a large number of small units
(regions) known as Domains and the region separating
3
the domains are called domain walls.
• Below the curie temperature TC, magnetic dipole
moments within the domains are in mutual alignment
resulting in a net magnetic dipole moment.
• In the absence of an external magnetic field, various
domain vectors have random orientations and hence
their resultant magnetic moment is zero.
• When a magnetic field of suitable strength is applied,
each domain experiences a torque and hence rapidly
rotate and remain aligned parallel to the direction of
the field causing the magnetisation. 2
• As the strength of the external magnetic field is
increased, more and more domains flip and align in the
direction of the field.
 • Finally, at a certain stage, practically all domains get
aligned in the direction of the field. This is known as
magnetic saturation.
At this stage, a ferromagnetic substance behaves as a permanent magnet and
retains its magnetic property (residual magnetism) even if the external magnetic
field is removed.
3 Derive an expression for electrical conductivity of intrinsic semiconductor. PO1 8
Hence arrive an expression for energy gap.

Ans
Expression for electrical conductivity of intrinsic semiconductor
For intrinsic semiconductor 1
𝜎 = 𝜎𝑒 + 𝜎ℎ 1
For electrons, 1
𝜎𝑒 = 𝑛𝑒 𝑒𝜇𝑒
For holes,
𝜎ℎ = 𝑛ℎ 𝑒𝜇ℎ
Since, both electrons and hole contribute to the electrical conductivity in
3
semiconductors,
𝜎 = 𝜎𝑒 + 𝜎ℎ
𝝈 = 𝒏𝒆 𝒆𝝁𝒆 + 𝒏𝒉 𝒆𝝁𝒉
But for intrinsic semiconductors 𝑛𝑒 = 𝑛ℎ = 𝑛𝑖
𝜎 = 𝑛𝑖 𝑒(𝜇𝑒 + 𝜇ℎ )
3
2𝜋𝑘𝑇 2 3 −( 𝐸𝑔 )
𝜎 = 2 [ 2 ] (𝑚𝑒 ∗ 𝑚ℎ ∗ )4 𝑒 2𝑘𝑇 × 𝑒(𝜇𝑒 + 𝜇ℎ )
ℎ
This is the expression for electrical conductivity in intrinsic semiconductors.

2
Plot the graph of ln R versus 1/T
To arrive at Eg = 2 x KB x slope

4 Explain the principle, construction and working of a semiconductor laser with PO1
8
suitable diagram.
Ans Principle
2
The recombination of electrons and holes in a direct bandgap semiconductor result in
emission of photons of wavelength λ = hc/Eg, where Eg is the bandgap.
 Semiconductor diode laser: Construction + working

Construction:
Explanation 2

Working :
Explanation
.

5 The magnetic susceptibility of a material at room temperature is 0.82 x 10-8. Calculate PO2 5
its magnetization under the action of a magnetic induction of 0.25 Tesla.
Ans
2

6 The Hall Co-efficient of a specimen of doped silicon is found to be 3.66 x 10-4 PO2
m3/coulomb. The resistivity of the specimen is 9.93 x 10-3 Ω-m. Find the mobility 5
and density of the charge carrier, assuming single carrier concentration.

Ans RH = 1/ne = 1/ Nh e or Nh = 1/ RH e = 1/[3.66x10-4x1.602x10-19] = 1.7055x1022/m3 3

we know σe = Ne e μe
σh = Nh e μh
μh = 1/ρi Nh e 2
=1/[9.93x10-3x1.7055x1022x1.6x10-19]
μh = 0.041 m2/Vs
******