AONS66406

40V N-Channel AlphaSGT TM

General Description Product Summary

• Trench Power AlphaSGTTM technology VDS 40V

• Low RDS(ON) ID (at VGS=10V) 30A
• Logic Level Driving RDS(ON) (at VGS=10V) < 6.1mΩ
• Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=4.5V) < 9.4mΩ
• RoHS and Halogen-Free Compliant

Applications 100% UIS Tested

100% Rg Tested
• High Frequency Switching and Synchronous
Rectification
• DC-Motor Driver

DFN5x6 D
Top View
Top View Bottom View

1 8

2 7

3 6

4 5
G
PIN1
S
PIN1

Orderable Part Number Package Type Form Minimum Order Quantity

AONS66406 DFN 5x6 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 40 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 30
ID
Current G TC=100°C 30 A
Pulsed Drain Current C IDM 110
Continuous Drain TA=25°C 22
IDSM A
Current TA=70°C 17.5
Avalanche Current C IAS 20 A
C
Avalanche energy L=0.3mH EAS 60 mJ
TC=25°C 36.5
PD W
Power Dissipation B TC=100°C 14.5
TA=25°C 5.0
PDSM W
Power Dissipation A TA=70°C 3.2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 20 25 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 45 55 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.8 3.4 °C/W

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 AONS66406

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 40 V
VDS=40V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.5 2.0 2.5 V
VGS=10V, ID=20A 5.0 6.1
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 7.5 9.1
VGS=4.5V, ID=20A 7.4 9.4 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 70 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 30 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1480 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 245 pF
Crss Reverse Transfer Capacitance 13 pF
Rg Gate resistance f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 20 30 nC
Qg(4.5V) Total Gate Charge 8.5 14 nC
VGS=10V, VDS=20V, ID=20A
Qgs Gate Source Charge 5.5 nC
Qgd Gate Drain Charge 3 nC
Qoss Output Charge VGS=0V, VDS=20V 10 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=1.0Ω, 2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs 11 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 21 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AONS66406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
10V 4.5V VDS=5V

80 80
6V 4V

60 60
ID (A)

ID (A)
40 40 125°C
3.5V

20 20 25°C

VGS=3V
0 0
0 1 2 3 4 5 1 2 3 4 5 6

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

15 1.8

Normalized On-Resistance
1.6
VGS=10V
10
RDS(ON) (mΩ)

ID=20A
VGS=4.5V 1.4

1.2
5 VGS=4.5V
ID=20A
VGS=10V 1

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

18 1.0E+01
ID=20A
15 1.0E+00

12 1.0E-01 125°C
RDS(ON) (mΩ)

IS (A)

9 125°C 1.0E-02

6 1.0E-03 25°C

3 25°C 1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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 AONS66406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2000
VDS=20V
ID=20A
8 Ciss
1500

Capacitance (pF)
VGS (Volts)

6
1000
4

500
2 Coss
Crss
0 0
0 5 10 15 20 25 0 10 20 30 40

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 10µs 400
RDS(ON) 10µs
limited
Power (W)

300
ID (Amps)

10.0
100µs
1ms
1.0 10ms 200

TJ(Max)=150°C DC
0.1 TC=25°C 100

0
0.0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=3.4°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AONS66406

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 40

40
30
Power Dissipation (W)

Current rating ID (A)

30
20
20

10
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

1 10000
TA=25°C

1000
Eoss(uJ)

Power (W)

0.5 100

10

0 1
0 10 20 30 40 1E-05 0.001 0.1 10 1000

VDS (Volts) Pulse Width (s)

Figure 14: Coss stored Energy Figure 15: Single Pulse Power Rating Junction-
to-Ambient (Note H)

10
ZθJA Normalized Transient

D=Ton/T In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=55°C/W

0.1

PDM
0.01 Single Pulse

Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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 AONS66406

Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: UnclampedInductive
Unclamped InductiveSwitching
Switching (UIS) Test
TestCircuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD: Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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