STF19NM50N, STP19NM50N,

STW19NM50N
N-channel 500 V, 0.2 Ω typ., 14 A MDmesh™ II Power MOSFETs
in TO-220FP, TO-220 and TO-247 packages
Datasheet - production data

Features
TAB

Order codes VDS @ TJmax RDS(on) max ID

3
STF19NM50N
3
2 2
1 1 STP19NM50N 550 V 0.25 Ω 14 A
TO-220FP TO-220
STW19NM50N

• 100% avalanche tested

• Low input capacitance and gate charge
3
2 • Low gate input resistance
1
TO-247
Applications
Figure 1. Internal schematic diagram • Switching applications

' 7$% Description

These devices are N-channel Power MOSFETs
developed using the second generation of
MDmesh™ technology. This revolutionary Power
* MOSFET associates a vertical structure to the
company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high
6 efficiency converters.

$0Y

Table 1. Device summary

Order codes Marking Packages Packaging

STF19NM50N TO-220FP
STP19NM50N 19NM50N TO-220 Tube
STW19NM50N TO-247

September 2013 DocID17079 Rev 2 1/18

This is information on a product in full production. www.st.com
Contents STF19NM50N, STP19NM50N, STW19NM50N

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 9

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

2/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Value
Symbol Parameter Unit
TO-220 TO-247 TO-220FP

VDS Drain-source voltage 500 V

VGS Gate-source voltage ± 25 V
ID Drain current (continuous) at TC = 25 °C 14 14 (1) A
ID (1)
Drain current (continuous) at TC = 100 °C 10 10 A
IDM (2) Drain current (pulsed) 56 56 (1)
A
PTOT Total dissipation at TC = 25 °C 110 30 W
dv/dt (3) Peak diode recovery voltage slope 15 V/ns
Insulation withstand voltage (RMS) from all
VISO three leads to external heat sink 2500 V
(t = 1 s; TC = 25 °C)
Tstg Storage temperature - 55 to 150 °C
Tj Max. operating junction temperature 150 °C
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 14 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Table 3. Thermal data

Value
Symbol Parameter Unit
TO-220 TO-247 TO-220FP

Rthj-case Thermal resistance junction-case max 1.14 4.17 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 50 62.5 °C/W

Table 4. Avalanche characteristics

Symbol Parameter Value Unit

Avalanche current, repetitive or not-repetitive

IAR 6 A
(pulse width limited by Tj max)
Single pulse avalanche energy
EAS 208 mJ
(starting Tj = 25°C, ID = IAR, VDD = 50 V)

DocID17079 Rev 2 3/18

18
Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 5. On /off states

Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source
V(BR)DSS ID = 1 mA, VGS = 0 500 V
breakdown voltage
Zero gate voltage VDS = 500 V 1 µA
IDSS
drain current (VGS = 0) VDS = 500 V, TC=125 °C 100 µA
Gate-body leakage
IGSS VGS = ± 25 V ±100 nA
current (VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
Static drain-source on-
RDS(on) VGS = 10 V, ID = 7 A 0.2 0.25 Ω
resistance

Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 1000 - pF

Coss Output capacitance VDS = 50 V, f = 1 MHz, - 72 - pF
VGS = 0
Reverse transfer
Crss - 3 - pF
capacitance
Equivalent output
Coss eq(1) VDS = 0 to 400 V, VGS = 0 - 202 - pF
capacitance
Intrinsic gate
RG f = 1 MHz, ID=0 - 4.4 - Ω
resistance
Qg Total gate charge VDD = 400 V, ID = 14 A, - 34 - nC
Qgs Gate-source charge VGS = 10 V - 5 - nC
Qgd Gate-drain charge (see Figure 17) - 18 - nC
1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDS

Table 7. Switching times

Symbol Parameter Test conditions Min. Typ. Max Unit

td(on) Turn-on delay time - 12 - ns

tr Rise time VDD = 250 V, ID = 7 A, - 16 - ns
RG = 4.7 Ω, VGS = 10 V
td(off) Turn-off-delay time - 61 - ns
(see Figure 18)
tf Fall time - 17 - ns

4/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Electrical characteristics

Table 8. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 14 A

ISDM (1)
Source-drain current (pulsed) - 56 A
VSD (2)
Forward on voltage ISD = 14 A, VGS = 0 - 1.5 V
trr Reverse recovery time - 296 ns
ISD = 14 A, di/dt = 100 A/µs
Qrr Reverse recovery charge - 3.5 µC
VDD = 60 V (see Figure 21)
IRRM Reverse recovery current - 23 A
trr Reverse recovery time ISD = 14 A, di/dt = 100 A/µs - 346 ns
Qrr Reverse recovery charge VDD = 60 V, Tj = 150 °C - 4 µC
IRRM Reverse recovery current (see Figure 21) - 24 A
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

DocID17079 Rev 2 5/18

18
Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP
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Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247
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6/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Electrical characteristics

Figure 8. Output characteristics Figure 9. Transfer characteristics

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Figure 10. Normalized VDS vs temperature Figure 11. Static drain-source on resistance
AM09028v1 $0Y
VDS 5'6 RQ
(norm)
ID=1mA 2KP
1.10  9*6 9
1.08 
1.06 
1.04

1.02

1.00

0.98

0.96
0.94 
0.92 
-50 -25 0 25 50 75 100 TJ(°C)         ,' $

Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
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DocID17079 Rev 2 7/18

18
Electrical characteristics STF19NM50N, STP19NM50N, STW19NM50N

Figure 14. Normalized gate threshold voltage vs Figure 15. Normalized on-resistance vs
temperature temperature
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8/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Test circuits

3 Test circuits

Figure 16. Switching times test circuit for Figure 17. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 18. Test circuit for inductive load Figure 19. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 20. Unclamped inductive waveform Figure 21. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

DocID17079 Rev 2 9/18

18
Package mechanical data STF19NM50N, STP19NM50N, STW19NM50N

4 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

10/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Package mechanical data

Table 9. TO-220FP mechanical data

mm
Dim.
Min. Typ. Max.

A 4.4 4.6
B 2.5 2.7
D 2.5 2.75
E 0.45 0.7
F 0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H 10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2

DocID17079 Rev 2 11/18

18
Package mechanical data STF19NM50N, STP19NM50N, STW19NM50N

Figure 22. TO-220FP drawing

7012510_Rev_K_B

12/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Package mechanical data

Table 10. TO-220 type A mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

DocID17079 Rev 2 13/18

18
Package mechanical data STF19NM50N, STP19NM50N, STW19NM50N

Figure 23. TO-220 type A drawing

BW\SH$B5HYB7

14/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Package mechanical data

Table 11. TO-247 mechanical data

mm.
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70

DocID17079 Rev 2 15/18

18
Package mechanical data STF19NM50N, STP19NM50N, STW19NM50N

Figure 24. TO-247 drawing

0075325_G

16/18 DocID17079 Rev 2

STF19NM50N, STP19NM50N, STW19NM50N Revision history

5 Revision history

Table 12. Document revision history

Date Revision Changes

09-Feb-2010 1 First release

– Updated: Section 2.1: Electrical characteristics (curves)
03-Sep-2013 2 – Updated: Section 4: Package mechanical data
– Minor text changes.

DocID17079 Rev 2 17/18

18
 STF19NM50N, STP19NM50N, STW19NM50N

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18/18 DocID17079 Rev 2