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RADIATION PHYSICS OF METALS
AND
ITS APPLICATIONS
i
ii
RADIATION PHYSICS
OF METALS
AND ITS APPLICATIONS
iii
Published by
Conditions of sale
All rights reserved. No part of this publication may be reproduced or transmitted
in any form or by any means, electronic or mechanical, including photo-
copy, recording, or any information storage and retrieval system, without
permission in writing from the publisher
ISBN 1-898326-8-35
iv
Contents
Introduction ...................................................................................... xi
Chapter 1
FORMATION OF RADIATION POINT DEFECTS AND THEIR
INTERACTION WITH EACH OTHER AND WITH SOLUTE
ATOMS IN METALS ........................................................................ 1
1.1. Introduction .................................................................................................... 1
1.2. Formation of primary radiation defects .......................................................... 2
1.3. Interaction of interstitials with each other and with solute atoms ................ 11
1.4. Interaction of vacancies with each other and with solute atoms ................... 20
References ................................................................................................................ 23
Chapter 2
DIFFUSION PROPERTIES OF POINT DEFECTS AND SOLUTES IN
PURE METALS AND ALLOYS ................................................... 25
2.1. Introduction .................................................................................................. 25
2.2. Diffusion in pure metals and alloys by the interstitial dumbbell mechanism 25
2.3. Diffusion of solute substitutional atoms by the vacancy mechanism ........... 34
References ................................................................................................................ 38
Chapter 3
BUILDUP AND ANNEALING OF RADIATION DEFECTS IN PURE
METALS AND ALLOYS ............................................................... 39
3.1. Introduction .................................................................................................. 39
3.2. The stages of recovery of structure-sensitive properties in irradiated metallic
materials ....................................................................................................... 40
3.3. The buildup of radiation defects during irradiation in the vicinity of absolute
zero ............................................................................................................... 42
3.4. Main equations of formation and thermal annealing of point defects during
irradiation. .................................................................................................... 44
3.5. Characteristic temperature ranges of radiation damage in formation and
thermally activated annealing of non-correlated point defects ..................... 48
3.6. Kinetics of buildup of radiation defects during the formation of complexes
with solute atoms .......................................................................................... 51
3.7. The formation and growth of clusters and dislocation loops in pure metals
v
and solid solutions in irradiation .................................................................. 59
3.7.1 Theory of the size distribution of clusters and dislocation loops of the
interstitial type and its application for analysis of the experimental data .. 65
3.7.2. The kinetics of buildup of interstitials and vacancies in pure metals and solid
solutions during the formation and growth of dislocation loops ................. 71
3.8. Formation and growth of voids in pure metals and alloys under irradiation 83
3.8.1. Nucleation of voids in alloys ........................................................................ 86
3.8.2. Growth of voids in alloys ............................................................................. 99
References .............................................................................................................. 110
vi
5.2. Main directions and problems of development of reduced-activation
materials ..................................................................................................... 196
References .............................................................................................................. 214
Chapter 6
MAIN PRINCIPLES AND MECHANISMS OF RADIATION DAM-
AGE OF STRUCTURAL METALLIC MATERIALS .................... 216
vii
viii
Lev Ivanovich IVANOV, Doctor of
Physico-Mathematical Sciences, Laureate
of the State Prize of the USSR, Honoured
Activist in Science and Technology of
Russia, Head of the Laboratory ‘The effect
of radiation on metals’ of the A.A. Baikov
Institute of Metallurgy and Materials
Science, Russian Academy of Sciences,
Moscow
ix
x
INTRODUCTION
xi
In particular, this problem is important for ‘clean’ fusion power engineering,
because the absence in these reactors of traditional fission fuel creates, when
using materials with accelerated decrease of induced radioactivity, the most
suitable conditions for the efficient solution of the problem of increasing
the service reliability of reactors, utilisation and processing of radioactive
waste. At present, the problem of application of reduced-activation materials
is becoming more and more important also in the area of conventional atomic
power engineering.
Within the framework of this problem, the appropriate chapter of the
monograph includes the calculation and experimental estimates of the parameters
of activation of individual chemical elements and alloys, examination of
a number of methods of reducing the activation of materials, analysis of
general directions and problems of the development of reduced-activation
radiation-resistant alloys. In the final chapter of the monograph, attention
is given to the main experimental relationships and the mechanisms of radiation
damage in a number of pure metals and structural metallic materials in atomic
and fusion power engineering, determined by the processes of radiation
hardening, embrittlement, creep and swelling.
When writing the monograph we have used to a large degree the theoretical
and experimental data obtained in the laboratory ‘The effect of radiation
on metals’ of the Institute of Metallurgy and Materials Science of the Russian
Academy of Sciences, and also the results of the joint investigations with
other laboratories of the Institute, domestic and foreign scientific centres.
We are grateful to all co-authors of these studies.
A significant contribution to the presented material has been provided
by Prof. L.N. Bystrov of the laboratory ‘The effect of radiation on met-
als’ and Profs. A.C. Damask and J.J. Dienes of the Brookhaven National
Laboratory, USA.
In preparation of the monograph we were greatly helped by scientists
of our laboratory S.V. Simakov, V.I. Tovtin, N.A Vinogradov, O.N. Nikitushkina
and V.A. Polyakov. We are also grateful to Academician N.P. Lyakishev,
Director of the Institute of Metallurgy and Materials Science of the Rus-
sian Academy of Sciences, for his considerable attention to studies in the
radiation physics of solids and metals science and for his help in publishing
this monograph.
xii
Chapter 1
1.1. INTRODUCTION
1
volumes of primary damage and/or diffusion of freely-migrating point
defects and solutes.
In this chapter, attention will be given to the main relationships
governing the formation of primary radiation defects. Special attention
is given to the problem of formation of freely-migrating vacancies
and interstitials, because the concentration of these defects plays a
significant role in the processes of formation and evolution of secondary
radiation defects.
In this chapter, attention is also given to the current assumptions
regarding the interaction of point defects with each other and with
the solute atoms. In a general case, this interaction determines the
structures of defect and defect–impurity complexes and diffusion pa-
rameters of the vacancies, interstitials and solutes. The interaction
mechanisms may already play a specific role in the stage formation
of primary radiation defects where the athermal or thermally-
activated formation of different defect and defect–impurity configu-
rations, may modify the final structure of defects, characteristics of
pure metals. At temperatures at which the point defects are mobile,
their concentration and mechanisms of interaction with each other
and with the solute atoms may be the main factors determining the
evolution of the structure of radiation damage and the variation of
the properties of materials during irradiation.
d σ ( E,T )
Tmax
ν (E ) = ∫ dT ν (T ) (1.1)
Td
dT
2
to T + dT to the primary-displaced atom, ν(T) is the number of Frenkel
pairs formed by recoil atoms of this energy range, T d is the threshold
energy of displacement, and T max is the maximum energy which can
be transferred by the particle to the primary-displaced atom. For the
electrons, this energy is:
2 E ( E + 2me c 2 )
Tmax = (1.2)
Mc 2
For the neutrons and heavy ions, T max is expressed by the equa-
tion:
4EM 1M 2
Tmax =
( M1 + M 2 ) (1.3)
2
3
the cascade. The formation of chains of atomic displacements was
detected for the first time in [3] in computer modelling of the process
of atomic collisions in copper, using the molecular dynamics method.
The final structure of the cascade consists of a neutral zone with
a higher concentration of defects of the vacancy type, and a periphery
characterised by the localisation of individual interstitials or by clusters
of these atoms.
Intracascade recombination, characterising cascade efficiency, for
similar models may be evaluated by means of analytical expressions
presented in, for example, [4,5].
At specific energies of the primary-displaced atom, branching of
the cascade may take place. The mean number of sub-cascades in
a cascade within the framework of the Kinchin–Pease modified model
is expressed by the equation [6]:
Ed
ν sc = (1.5)
2, 5 Esc
4
by estimates of the kinetic energy of the atoms, atomic density and
the parameter of the long-range order in the region of the thermal
peak [7, 10].
The rapid increase of temperature in the zone of the thermal peak
greatly intensifies the process of mutual recombination of defects,
and the formation of a molten zone leads to the formation of cluseters
of interstitials at the periphery of the cascade as a result of the effect
of two mechanisms which were not previously observed: the mechanism
of ballistic displacement of interstitials from the molten zone [9],
and the mechanism of formation of clusters under the effect of a
shockwave formed during rapid cooling of the melting zone [10].
The intensification of the mutual recombination of the point defects
during the formation of a thermal peak is one of the most impor-
tant consequences of computer modelling because this fact is in agree-
ment with the actual experimental data.
It is also important to mention that the formation of subcascades
which in the experiments with computer modelling was observed for
the first time in [10] for a recoil energy of 25 keV, was accompa-
nied by the merger of molten zone of two subcascades. In fact, this
result contradicts of widely held opinion [4,6,11] according to which
the formation of subcascades results in a decrease of the spatial cor-
relation between the defects in the cascade, decreases their density
and, consequently, suppresses the recombination processes, supporting
the retention of a large part of residual defects.
One of the applied aspects of the theory of formation of primary
radiation defects was associated with the need for correct calculation
of the number of displacement per atom (dpa):
d σ ( E,T )
Tmax Emax
Nd = t ∫ dT ν (T ) ∫ ϕ ( E ) dT dE
i (1.6)
Td Emin
5
it does not expresses adequately the degree of radiation damage and,
evidently, does not provide information on the structural composition
of radiation defects. One can present a large number of examples
of inadequacy of this criterion, for example, as clearly indicated by
the results of [12,13].
In recent years, there has been a tendency for comparing the ef-
ficiency of structural phase changes under the effect of radiation of
different type and energy on the basis of the evaluation of the con-
centration of freely-migrating defects avoiding recombination or merger
into clusters in the process of primary radiation damage. Evidently,
this criterion has an obvious advantage in comparison with the dpa
parameter, especially at elevated temperatures, characterised by rapid
diffusion-controlled processes of the nucleation and growth of clusters,
dislocation loops and voids, and also phase changes of different type.
Theoretically, the fraction of freely-migrating point defects may
be evaluated either on the basis of the theory of binary collisions
in the modified Kinchin–Pease model or directly in computer modelling
of the process of atomic collisions.
In a general case, within the framework of the model of binary
collisions, it is possible to calculate any fraction of defects η(T) formed
by all primary-displaced atoms with an energy lower than T [11]:
1
T
d σ ( E , T ')
η(T ) = ∫ dT ' ν (T ')
ν ( E ) Td dT ' (1.7)
6
1
2 3
4
7
5 6
T, eV
Fig. 1.1. Fraction of defects formed by primary-displaced atoms with an energy
lower than T by particles of different type and energy in copper and nickel [11].
1) 1 MeV e, 2) 200 keV H, 3) 2 MeV He, 4) 2 MeV Ne, 5) 2 MeV Ar, 6) 2 MeV
Kr.
7
on the basis of measurement of the variation of the properties of
materials (electrical resistance, lattice parameters, etc.) in the process
of radiation using the available values of the properties for the unit
concentration of Frenkel pairs. However, it is evident that these ex-
periments provide some averaged-out information on the total con-
centration of residual radiation defects because of the non-additive
contribution of defects of different type and configuration to the
measured properties. The direct investigations include investigations
carried out at temperatures at which point defects are mobile and
the variation of the properties of irradiated objects is determined
directly by the concentration of the defects and the diffusion parameters.
Analysis shows that the main relationships, determined in both
direct and indirect experiments, are in qualitative agreement with
the results of the previously-examined theoretical calculations. As
an example, Fig. 1.2 shows the relative efficiency of formation of
mobile defects in relation to the mean-weighted recoil energy T 1/2
obtained on the basis of analysis of the experimental data in the ex-
amination of surface segregation in Ni–12.7at.% Si alloy at a temperature
of ~800 K [14]. The efficiency, presented in Fig. 1.2, is normalised
for the efficiency of formation of freely-migrating defects for protons
with an energy of 1 MeV. Identical dependences were also obtained
for Cu–Au and Mo–Re alloys [15,16].
Figure 1.2 shows that the fraction of freely-migrating defects
1 MeV H
Relative efficiency
2 MeV He
3 MeV Li
3 MeV Ni
3.25 MeV Kr
T 1/2 , eV
Fig. 1.2. Relative efficiency of different ions for the formation of freely-migrating
defects in relation to the mean-weighted recoil energy T 1/2 [14].
8
decreases with the mass and energy of the ions, i.e. with an increase
in the energy of primary-displaced atoms, showing a tendency to satu-
ration. The identical nature of the dependence, as already mentioned,
is also observed in low-temperature experiments [8].
As reported in [15, 16], one of the main problems in the quan-
titative estimates of the fraction of freely-migrating defects is as-
sociated with its temperature–energy dependence. Analysis of the
experimental data in the appropriate low temperature [8] and high-
temperature [14, 16] experiments shows that the fraction of freely-
migrating defects, evaluated on the basis of the results of experi-
ments carried out at elevated temperatures, decreases more rapidly
with the energy of primary-knocked out atoms [15, 16]. In the low-
temperature experiments, the fraction of the stable Frenkel defects
decreases with increasing recoil equal energy, reaching a saturation
at a concentration of ~25% of the calculated number of displacements.
For increased radiation temperatures, the concentration of freely-
migrating defects for a recoil energy of > 25 keV, typical of fission
and fusion neutrons, decreases to approximately 1% [15]. The qualitative
interpretation of the temperature–energy dependence was carried out
in [15, 16], assuming the intensification of intra-cascade recombi-
nation and of the processes of recombination and formation of clusters
of defects in the region of adjacent cascades. In our view, in the
interpretation of this temperature–energy dependence it is also necessary
to take into account the effect of thermal oscillations of the atoms
of the lattice on the dynamics of defect formation. As shown in [17,
18], in modelling the process of atomic collisions in Cu, the mean
distance between the vacancy and the interstitial in the Frenkel pairs
is almost halved with an increase of the irradiation temperature from
zero to 293 K. This is associated with an increase of the probability
of defocusing of sequences of substituting atomic collisions with an
increase of the amplitude of atomic oscillations. It is evident that
the given process supports an increase of the spatial correlation between
defects and, consequently, increase of the intensity of mutual recom-
bination and probability of the formation of clusters. This mecha-
nism should be more pronounced in cascades with a higher energy
density in which the total density of atomic displacements is higher.
The analysis results showing a reasonably good agreement of the
experimental and calculated data in the evaluation of the fraction
of freely-migrating defects have been published in [19]. The calculations
were based on the model proposed in [19, 20] which, in fact, rep-
resents a modified variant of the previously examined model within
which the fraction of the defects for any energy range of primary-
9
displaced atoms is evaluated using equation (1.7). In the model [19,
20) in the evaluation of the fraction of freely-migrating defects attention
is given to the formation of stable isolated Frenkel pairs not only
from the primary-displaced recoil atom but also in subsequent secondary
generations of atomic collisions. In this case, in addition to the energy
condition of formation of stable isolated pairs T d < T < 2.5 T d , of
the factor of the spatial instability of individual vacancies and interstitials
was also taken into account. It was assumed that the stable isolated
point defects form in sequences of atomic collisions whose distance
exceeds the radius of interaction of point defects for their recom-
bination or formation of complexes.
Taking these factors into account, equations modified in relation
to equation (1.7) were obtained and used as a basis for calculations
of the fraction of stable Frenkel pairs in nickel in irradiation with
ions of different energy and mass. The results of these calculations
and the corresponding data are presented in Table 1.1.
In Table 1.1, from [19], the experimental data for [21] are pre-
sented in the form of quantities η exp , normalised in relation to the
absolute fractions of freely-migrating defects. On the basis of the
relatively good quantitative agreement between the calculated and
experimental data it is possible to assume that the main assumptions
of the accepted model are evidently accurate. In the course of cal-
culations, it was also possible to determine several relationships gov-
erning the effect of the order of generation of secondary atomic col-
lisions on the evaluated fraction of freely-migrating defects. For light
ions H + , He + and Li + up to 95% of all free Frenkel pairs are formed
by primary-displaced atoms. Their fraction may be evaluated using
equation (1.7) in which the integral should be additionally multi-
plied by parameter β < 1, characterising the spatial instability of
the point defects. For high-energy ions of Ni + and Kr + , a significant
Table 1.1 Calculated and experimental values of the fraction of Frenkel defects
in nickel irradiated with particles of different type and energy [19]
1 M e V H+ 8.8 20 [2 1 ]
2 M e V He + 7.1 9.6 [2 1 ]
2 Me V Li+ 6.4 7.4 [2 1 ]
3 0 0 k e V N i+ 1.2 1.5 [2 2 ]
3 Me V N i+ 1.6 1.6 [2 1 ]
3 . 2 5 Me V K r+ 1.4 <0.4 [2 1 ]
2 keV O + 1.7 1.5 [2 3 ]
10
contribution to the fraction of formation of freely-migrating defects
is provided by generations of higher orders. For example, for Kr +
and Ni + (300 keV) only 40 and 25% of the total concentration of
mobile defects are formed by primary-displaced atoms. These special
features are also in agreement with the calculations of formation of
defects only by primary-displaced atoms (Fig. 1.1) which show that
the fraction of the freely-migrating defects decreases with an increase
of the energy and mass of the ions.
In conclusions, it should be mentioned that the analysis of the
fraction of the freely-migrating defects in direct experiments should
be carried out on the basis of radiation-enhanced diffusion in the
examined materials. With the exception of [19], this approach has
not been used in the analysis of experimental data because, in particular,
the mechanisms of radiation-enhanced diffusion determine the dy-
namic concentration of freely-migrating defects and, consequently,
variations of the properties of the irradiated materials.
Fig. 1.3. Dumbbell configurations of interstitials in FCC (a) and BCC (b) lattices.
11
Fig. 1.4. Configuration of complexes from two interstitials in the FCC lattice
[25]: a) unstable; b) binding energ y B = 0. 36 eV; c) B = 0.40 eV; d) B =
0.46 eV.
12
in the close-packed direction <111>. One of the crowdions repre-
sents a configuration in which two atoms are localised symmetri-
cally in relation to the centre of the elementary cube of the BCC
lattice. In the second crowdion configuration, an interstitial atom
is implanted between the nearest neighbours. Within the limits of
the calculation error, the energy of formation of these crowdions is
identical. Evidently, only accurate experiments can confirm the validity
of different theoretical estimates.
The results of interaction of interstitials with substitutional at-
oms were initially analysed in [38] for the octahedral configuration
in the FCC lattice of copper. The authors of [38] used the method
of lattice statistics and also an approach in which the forces, act-
ing from the side of the defect and the solute atom were calculated
from the values of their dilation changes in the lattice.
The results of the calculations show that the interaction of the
interstitials with the solute atoms with the dilation volumes of different
sign greatly differs. The most stable positions of the interstitials for
the substitutional atoms with ∆V > 0 (oversized atoms) positions (1,0,0)
and (1,1,1) (Fig. 1.5a) which, at the same time, for the atoms with
∆V < 0 are unstable. In the vicinity of an impurity with ∆V < 0
(undersized atoms) the interstitial is stable only in the position (2,1,1)
(Fig. 1.5b).
Figure 1.5c shows the configuration of the most stable hetero-
geneous nucleus of a cluster of interstitials, constructed on the basis
of the results of calculations conducted by the summation of the energies
of the corresponding paired interactions.
The theoretical analysis of the stability and mechanisms of mi-
gration of the self-interstitial and mixed dumbbell configurations was
carried out for the first time in [13]. The calculations were conducted
by methods of the theory of perturbation and computer modelling
using the Morse and Born–Mayer potentials. In the calculations, it
Fig. 1.5. The nearest stable positions of an octahedral interstitial in the vicinity
of a substitutional atom with ∆V > 0 (a), ∆V < 0 (b) and the structure of a heterogeneous
nucleus of a cluster of interstitials in the FCC lattice (c) [38].
13
was assumed that the impurities with the positive and negative dilation
volumes displace the position of the minimum of the potential of
atomic interaction in the pure solvent R 0 by the value +r and –r, re-
spectively. The binding energy of a mixed dumbbell is character-
ised consequently by the value and sign of the so-called mismatch
parameter ε = r 0 /R 0 , associated with the relative dilation volumes
of the impurity by the relationship: ∆V/V∆ ≈ 6ε [39]. The results
of calculations of the binding energy of the mixed dumbbell by the
method of the theory of perturbation in relation to the value of parameter
ε are presented in Fig. 1.6. They show that the positive energy of
binding in the mixed dumbbell <100> is possible only for r 0 < 0,
i.e. the formation of these dumbbells is possible only for undersized
impurities (∆V < 0). Calculations by the method of computer modelling
using the Morse and Born–Mayer potentials show that for high negative
values of r 0 when –ε > 0.06, the mixed dumbbell becomes unsta-
ble, as in the case of positive values of ε > 0.03.
The results of calculations of the binding energy in the <100>
self-interstitial dumbbell–substitutional atom complexes, carried out
also in the above study, are presented in Fig. 1.7. The values of the
binding energy in Fig. 1.7 are given for undersized atoms in the units
of the binding energy of the mixed dumbbell. For the atoms with
positive dilation volumes, the sign of the interaction energy changes
to the opposite sign together with the variation of the sign of r 0 . In
addition to the data for the Morse potential, the values in the brackets
E dmd , eV
. . .
Fig. 1.6. The binding energy of a mixed dumbbell in relation to the value of the
mismatch parameter ε in the FCC lattice [30].
14
Fig. 1.7. Binding energy in different self-interstitial dumbbell <100>–impurity
atom complexes in the FCC lattice [30].
15
be controlled by the vacancy mechanism. The configuration of the
most stable complexes, calculated in [40–42], for the majority of
impurities in the FCC lattice of aluminium did not, however, cor-
respond to the results obtained in [30].
In these investigations, using the molecular dynamics method and
interaction potentials obtained from the first principles, the configu-
rations of the complexes were determined for a number of substitutional
impurities with ∆V < 0 (Be, Li, Zn) and ∆V > 0 (Mg, Ca). In the
FCC lattice of Al, the configuration of the most stable complex cor-
responded to the calculations in [30] only for Zn and was represented
by a mixed dumbbell <100>. For the oversized solute Ca, for ex-
ample, the most stable configuration was the one in which the self-
interstitial dumbbell was situated in the nearest lattice site in re-
lation to the calcium atom. According to the estimates in [30], this
complex is generally unstable, as indicated by Fig. 1.7.
The formation of stable mixed dumbbells <100> in a number of
irradiated FCC metals for undersized atoms has been confirmed by
direct channelling experiments [31]. For irradiated BCC metals, as
indicated by these experiments, the interstitials with the undersized
impurities form stable mixed dumbbells <100>. This result is in agree-
ment with relatively recent theoretical calculations carried out in [33]
in which the molecular dynamics method was used to estimate the
stability of mixed dumbbells using the approach applied in the cal-
culations in [30]. In this work as in [30], the potential used in the
calculations (these calculations were carried out using the nonequilibrium
Johnson potential) was modified taking into account the mismatch
parameter. The results show that, in this case, the mixed dumbbell
<110> is stable, like the mixed dumbbell <100> in the FCC lattice,
only for impurities with negative dilation volumes. At ε < –0.15,
it is not stable and transforms into the tetrahedron or octahedral con-
figuration.
A large part of experimental investigations in the evaluation of
the efficiency of the interaction of interstitials with the solute at-
oms has been carried out using the method of measurement of electrical
resistance in examination of annealing or of the kinetics of buildup
of defects at temperatures of the recovery stage II. In these inves-
tigations, the defect–impurity interaction is analysed on the basis
of the value of the relative radii of capture of the interstitials by
impurity traps, determined when processing the experimental data
within the framework of specific modelling representations.
Analysis shows that it is usually not possible to accurately systematise
these and other experimental data obtained in the examination of
16
the interaction of interstitials and solutes within the framework of
the model [30]. A detailed analysis was also carried out, in particular,
in a review in [45] on the basis of analysis of a large number of
experimental results. We believe that a highly characteristic example
of this type is provided by comparison of the results obtained for
diluted silver–copper and copper–silver alloys in which the relative
dilation volumes are equal to –0.28 and +0.43, respectively [46]. Ex-
periments show [47] that the oversized atoms of Ag and Cu are far
more efficient traps for interstitials than the undersized atoms of copper
in the silver lattice. Estimates carried out in [47] show that the relative
radius of capture of interstitials by atoms of silver in copper–sil-
ver alloys is three times higher than the value for silver–copper alloys.
On the whole, it is note possible to detect any specific relationships
in the efficiency of capture of the interstitials by the solutes with
the dilation volumes higher than and lower than zero.
One of the reasons for mismatch is associated with the simpli-
fied theoretical representations of the model in [30]. The type and
stability of the complexes may be determined not only by the value
and sign of the dilation volumes but also by special features of the
electronic structure of the defects and impurities which are not taken
into account in the model in [30]. As already mentioned, this possibility
is shown in [40–42] which considered the interaction potentials obtained
from the first principles.
At the same time, when processing the experimental data, it is
very complicated to take into account the actual reactions of the defects
and defect–impurity interaction. In irradiation or subsequent annealing,
these reactions may lead to the formation of complexes of differ-
ent type and size. Taking also into account the non-additive nature
of the contribution from the defects of different type to the meas-
ured properties (for example, electrical resistance), the results of
the investigations may provide some average values in this case.
To conclude this section, we shall examine several consequences
resulting from the considerations on the non-equivalent groups of
the interstitials in the FCC lattice [38, 48]. They make it possible
to analyse the possible structure of the interstitial complexes within
the framework of a simple geometrical approach.
Analysis carried out in [38, 48] shows that all possible positions
of the interstitials during their migration through the crystal are
subdivided into four characteristic groups which are such that every
interstitials remains in its group during migration.
If the octahedral configuration is the stable configuration of the
interstitials, and the dumbbell configuration is the saddle configuration,
17
then in a single jump any of the three coordinates of the interstitials
should change by +2a. In relation to some separated atom of the lattice,
these groups have the coordinates: (2n 1 + 1, 2n 2 , 2n 3 ), (2n 1, 2n 2+1,
2n 3 ) (2n 1 , 2n 2 , 2n 3 + 1), and (2n 1 , 2n 2 + 1, 2n 3 + 1), where n i are
integer numbers, 2a is the lattice parameter. All the coordinates, pre-
sented above, are expressed in the units of a.
Identical non-equivalent groups for the migration of interstitials
in the dumbbell configuration <100> are characterised by the co-
ordinates of the centre of the masses of the dumbbell (n 1, n 2, n 3) and
its orientation ξ(x, y, z) (Table 1.2).
During migration of a defect in an ideal infinite crystal, all these
groups are equivalent because of the translational invariance of the
ideal crystal. In the presence of a second defect, this equivalency
is partially or completely moved and, consequently, this results in
a number of interesting consequences.
On the basis of the non-equivalent groups, we shall examine initially
the stability of the complexes presented in Fig. 1.4, taking into account
the results of calculations by Vineyard [25].
It is assumed that one of the interstitials in the complex occu-
pies the fixed position (0,0,0,X), i.e., according to Table 1.2 it belongs
to the group I. It may also be seen that an unstable configuration
(Fig. 1.4a) forms only when both interstitials belong to the same group.
The case in Fig. 1.4a corresponds to the position of the second interstitial
(1,1,0,Y).
The configuration in Fig. 1.4b corresponds to the position of the
Gro up n1 n2 n3 ξ
2n 1 2n 2 2n 3 X
I 2n 1 + 1 2n 2 + 1 2n 3 Y
2n 1 + 1 2n 2 2n 3 + 1 Z
2n 1 2n 2 2n 3 Y
II 2n 1 2n 2 + 1 2n 3 X
2n 1 2n 2 + 1 2n 3 + 1 Z
2n 1 2n 2 2n 3 Z
III 2n 1 + 1 2n 2 2n 3 X
2n 1 2n 2 + 1 2n 3 + 1 Y
2n 1 + 1 2n 2 + 1 2n 3 Z
IV 2n 1 + 1 2n 2 2n 3 + 1 Y
2n 1 2n 2 + 1 2n 3 + 1 X
18
second interstitials (1,1,0,X) from group II.
The identical configuration forms if the second interstitial atom
belongs to group III and occupies the position of the type (1,0,1,X).
The configuration in Fig. 1.4c may form if the second interstitial
belongs to the groups II, III and IV with the positions of the type
(0,1,1,Z), (0,1,1,Y) and (1,1,0,Z), respectively. The formation of the
configuration, is shown in Fig.1.4d, is possible is the second interstitial
belongs to the group IV with the position of the type (0,1,1,X).
All the stable complexes of the interstitials (Fig. 1.4b–d) are char-
acterised by similar binding energies. Analysis shows that the prob-
abilities of formation of the corresponding configurations are ex-
pressed by the ratio 2:3:1 and mutual transitions are possible be-
tween the configurations 1.4b–1.4c and 1.4c and 1.4d.
In conclusion, it should be stressed that in both the octahedral
and dumbbell configurations of the interstitials, the binary complexes
of the defects, belonging to one group, are unstable.
Within the framework of the considerations regarding the non-
equivalent groups it was also shown [38,48] that the interaction of
self-interstitial dumbbells with the solutes may be accompanied by
the formation of complexes of two types: the self-interstitial–impurity
atom complex with the possibility of a subsequent transition to a
mixed dumbbell and stable ‘self-interstitial dumbbell–impurity atom’
complexes. Figure 1.8 a–c shows the formation of mixed dumbbells
during the interaction of self-interstitial dumbbells, belonging to the
groups I–III, respectively (Table 1.2) with the substitutional atom
situated at the origin of the coordinates. Figures 1.8a–c reflect in
this case, for each group, the results of reactions of one of the self-
interstitial dumbells with the substitutional atom, localised at the
origin of the coordinates. The self-interstitial dumbells, belonging
to group IV (Table 1.2), cannot form a mixed dumbbell. Possible
configurations of the complexes with the solute for the self-inter-
stitial dumbells of the group IV are shown in Fig. 1.8d. It should
be mentioned that in the case of the dumbells, belonging to the groups
I–III, the formation of complexes of the type of 1.8d is not possi-
ble. The different binding energies in the complexes 1.8a–1.8c and
1.8d assume the possibility of existence in FCC metals of traps of
at least two types. This does not contradict the experiments with the
buildup and annealing of radiation defects in diluted solid solutions
at temperatures of stage II of recovery [45, 49–52].
19
l
20
mately proportional to the difference of the valencies of the matrix
and solutes. In fact, a similar result is obtained from a simple model
of interaction within in the framework of the Thomas–Fermi approxi-
mation (equation (1.8)). In contrast to this, the impurities of tran-
sition metals in the positions of the nearest neighbours are repulsed.
The maximum repulsive energy is ~0.2 eV. The calculated binding
energies of the divacancies in copper, nickel, silver, and palladium
are 0.076, 0.067, 0.079 and 0.11 eV, respectively. The configura-
tion and evaluation of the stability of more complicated vacancy com-
plexes can be found in, for example, [29, 30, 57]. The results of
these calculations, which have already been mentioned, are in a relatively
good agreement with the experimental data presented in [56], and
show that the binding energy of the vacancies in these metals with
the solute atoms is in the range 0.1–0.4 eV. According to the analysis
of the published experimental data, these values of the binding energy
are on average characteristic of the majority of other metals.
The formation of transmutation products of nuclear reactions and
the interaction with radiation defects may greatly modify the mechanisms
of radiation damage and the effects of radiation. A special role in
the intensification of the processes of swelling and embrittlement
is displayed by transmutation gases, in particular helium and hydrogen.
Therefore, the problems of interaction of the atoms of these gases
with radiation defects are of considerable significance. Within the
framework of this problem, attention should be given to the results
of theoretical analysis of the interaction of hydrogen and also of helium
and other inert gases with vacancies and interstitials, are presented
in [58, 59]. Calculations in [59] were carried out for the positions
of the solute atoms of inert gases: substitutional and interstitial (in
the octahedral position). For the atoms of helium in the interstitial
and substitutional positions, closest to the vacancy, the calculated
binding energies were 0.65 and 0.47 eV, respectively. With an in-
crease in the size of the atoms of the gases, the binding energy increases
and for xenon in the interstitial position it is > 3 eV. According to
the calculations, the atoms of the inert gases are effective traps also
for self-interstitials. For example, for helium, the binding energy in
a complex with an self-interstitial dumbbell is ~0.5 eV. Calculations
of the interaction of hydrogen or helium atoms with a vacancy show
[59] that for the single atom of hydrogen the most stable position
is directly in the vacant site of the lattice. The configurations of
the stable complexes for two atoms of hydrogen or helium maybe
of two types. The first configuration is a complex in which one of
the atoms of the gases is in a vacancy and the atom occupies the
21
nearest interstitial position. The second stable complex represents
a dumbbell of two solutes of the gases spaced at the same distance
from the vacancy. The calculations show that, being effective traps
for point defects, the atoms of the gases greatly restrict their dif-
fusibility.
Analysis of the diffusion of solutes in the alloys by the vacancy
mechanism is usually carried out on the basis of the multifrequency
theory of vacancy jumps [60, 61]. The theory is based on the model
in which the interaction of the vacancies with the solute atoms is
described within in the framework of the Thomas–Fermi approxi-
mation. The energy of interaction in this case is:
1/ 2
a
k0 = 2.95 0 (1.9)
rs
where a0 is the Bohr radius, rs is the radius of the sphere whose volume
relates to a single conductivity electron.
An important parameter of the multifrequency theory of diffusion
is the binding energy of the vacancy with the atom of the solutes
which determines the degree of localisation of the solutes at the vacancy
and, consequently, the efficiency of its diffusion transfer by the vacancy
mechanism. This fact also indicates the importance of accurate evaluation
of the binding energy on the basis of theoretical calculations and
the results of experimental investigations. The fundamentals of the
theory of diffusion of solutes by the vacancy and interstitial mechanisms
are examined in detail in the following chapter of this book.
22
REFERENCES
23
43 Takamura S., et al, J. Phys: Condens. Mater., 1, 4519 (1989).
44 Takamura S., et al, J. Phys: Condens. Mater., 1, No.1, 4527 (1989).
45 Robrok K.G., In: Phase transformations under radiation, Metallurgiya,
Chelyabinsk (1989).
46 King H.W., J. Mater. Sci., 1, 79 (1966).
47 Mauri F., et al, In: Point defects and defect interactions in metals, Tokyo
University Press, Tokyo (1982), p.383.
48 Ivanov L.I., et al, Phys. Stat. Sol. (a), 69, K33 (1975).
49 Dworshak, F., et al, J. Phys. F: Metal. Phys., 8, No.7, L153 (1978).
50 Swanson M.L. and Howe L.M., Nucl. Instr. and Meth. in Phys. Res., 218,
613 (1983).
51 Bartels A., et al, J. Phys. F: Metal. Phys., 12, No.11, 2483 (1982).
52 Tokamura S. and Kobiyama M., Phys. Stat. Sol. (a), 90, No.1, 269 (1985).
53 Properties of atomic defects in metals, J. Nucl. Mater., 69/70, 856 (1978).
54 Point defects and defect interactions in metals, Tokyo Univ. Press, Tokyo
(1982), p.991.
55 Vacancies and interstitials in metals and alloys, Mater. Sci. Forum, 15/18,
1442 (1987).
56 Klemradt U., et al, Phys. Rev. B., 43, No.12, 9487 (1991).
57 Masuda K., in ref. 53, p.105.
58 Baskes M.I., et al, J. Nucl. Mater., 83, No.1, 139 (1979).
59 Whitmore M.D. and Carbotte J.P., J. Phys. F: Metal. Phys., 9, No.4, 629
(1979).
60 Le Claire A.D.: in ref.53, p.70.
61 Le Claire A.D., Phil. Mag., 21, No.172, 819 (1970).
24
Chapter 2
2.1. INTRODUCTION
25
FCC metals
BCC metals
26
a result of the formation of less mobile mixed dumbbells (for ele-
ments with ∆V < 0) and as a result of periodic capture of self-interstitials
of elements both with ∆V < 0 and ∆V > 0.
The model which can be used, using the results in [8], for nu-
merical estimation of the mobility of interstitials and solutes in diluted
solid solutions with FCC lattices by the dumbbell mechanism, has
been proposed in [9]. The model is based on the method of Lidiard
complexes [10, 11] and on assumptions regarding the complexes of
the type a and b [8, 12]. The complexes of type a represent a con-
figuration of an self-interstitial dumbbell with an atom of the dis-
solved element which may transform into a mixed dumbbell during
migration of the self-interstitial dumbbell. In a complex of type b,
the self-interstitial dumbbell prior to dissociation may only migrate
in the vicinity of the impurity without forming a mixed dumbbell.
Evidently, this process does not lead to the transfer of the solutes.
Within the framework of the model [8], the formation of complexes
of the type a and b is characteristic for undersized and oversized
solutes, respectively (see section 1.3).
The authors of [9] obtained equations for calculating the coef-
ficient of diffusion of dumbbells D i (c B) and the coefficients of dif-
fusibility of solutes by the interstitial mechanism in an infinitely
diluted D i B (0) and a diluted solid solution D i B (c B ). The following
characteristic frequencies were used in these calculations:
ω 0 – the frequency of jumps of a self-interstitial dumbbell con-
figuration, including the displacement of the dumbbell with the variation
of its orientation by 90°;
ω1 and ω1' – the frequency of rotation of the self-interstitial dumbbell
around the atoms of impurities in the complexes a and b, respec-
tively;
ω 2 ' – the frequency of formation of a mixed dumbbell;
ω 2 – the frequency of dissociation of a mixed dumbbell;
ω 3 and ω 3 ' – the frequency of dissociation of the complexes of
type a and b;
ω 4 and ω 4 ' – the frequency of formation of complexes of type a
and b;
ω i – the frequency of retention of the mixed dumbbell;
ω R – the frequency of variation of the orientation of the mixed
dumbbell by 90°. The equation for the diffusion coefficient of the
dumbbells in a diluted alloy has the following form [9]:
27
Di (1 + βi cB ) + K pa γ pa cB
Di (cB ) = (2.2)
1 + K i cB
Di = 0.44λ i2 ω0 (2.3)
K pa D pa (1 + K i cB ) + 2σi Di K i cB
DiB ( cB ) = (2.5)
1 + K i cB
28
M 2 , s –2
–
dependence for ε > 0 does not change. For solutes with ε < 0, the
dependence theD i B (c B) is non-monotonic; with increasing |ε| diffu-
sion mobility initially increases, reaches the maximum value and then
decreases.
The model proposed in [9] can be used for the quantitative cal-
culations of the diffusion parameters if we know the corresponding
interaction potentials, required for estimating the frequencies ω k and
ω k '. The approximate estimation of the diffusion mobility of the
interstitials and vacancies in the diluted solid solutions is obtained
usually using the expressions for the effective diffusion coefficients.
The considerations regarding the effective diffusion coefficients
e
D v,i are based on the mechanism of periodic capture of migrating defects
by impurity traps with the formation of complexes and their sub-
sequent dissociation. It may be shown that for the case in which the
recombination of the interstitials and vacancies on deffect–impurity
complexes plays no significant role, the expression for D ev,i has the
following form (see, for example, [13]):
Dv ,i
Dve,i =
1 + 4πrtv ,i ctv ,i exp ( EvB,i / kT ) (2.6)
29
rameter, i.e. the binding energy of point defects and solutes EBv,i which
can be determined from the experiments.
Using equation (2.6), it is possible to determine, in relation to
the mismatch parameter, the effective mobility of interstitials in a
diluted copper alloy with 1 at% of solutes at 300 °C in order to compare
with the results of numerical calculations carried out by A. Barbu
[9]. For quantity E iB in equation (2.6) we shall accept, in accord-
ance with the data in [8], the values of the binding energy in a mixed
dumbbell (for impurities with ∆V < 0) and the binding energy in the
complexes of type b (for impurities with ∆V > 0).
The comparison of D i(cB) and Die(cB) (Fig. 2.2) shows that the agree-
ment of the results of the calculations obtained using the equations
(2.2) and (2.6) is highly satisfactory. Evidently, the small quanti-
tative difference is associated with the simplified approximation of
E i B by the selected interaction energies.
In transition to concentrated alloys, the effective mobility of the
interstitials greatly decreases in comparison with pure metals and
diluted solid solutions. This is shown clearly in a number of inves-
tigations, including examination of the kinetics of buildup and and
annealing of defects at temperatures of the recovery stages II and
III by the method of measuring electrical resistance in silver-zinc,
silver–palladium, palladium–silver [14, 15] and iron–chromium-nickel
[16, 17] alloys, radiation-enhanced diffusion in silver–zinc [18] and
copper–nickel [19] alloys, and structural changes in
aluminium–zinc [20, 21] and silver–zinc [18, 22] alloys in electron
irradiation in a high-voltage microscope.
In [14, 15] a large decrease of the mobility of interstitials results
in complete suppression of the mutual recombination of defects in
the process of irradiation and annealing of defects at temperatures
of the second recovery stage.
For Fe–16Cr–20Ni alloy, with a composition similar to the com-
position of the matrix solid solution of steel 316, the energy of migration
of interstitials according to the experimental data in [16] is ~0.9 eV.
This value is considerably higher than the energy of migration of
interstitials in pure iron and nickel (~0.3 eV [2,23] and 0.15 eV [2],
respectively). The relatively high energies of migration of interstitials
were also recorded for Ag–8.75 at% Zn alloy (E im > 0.46 eV for tem-
peratures higher than 90 °C) [18] and Cu–44 at% Ni alloy (E im =
0.48 eV) [19].
High energies of the migration of interstitials were also deter-
mined for concentrated alloys Fe–18.5Mn–7.5Cr (0.7 eV) and Fe–
7Mn–4.5Si–6.5Cr (1.1 eV) in examination of the nucleation of dis-
30
location loops in the process of electron irradiation in a high-voltage
microscope [24].
The authors of [14, 15] proposed a hypothesis according to which
a large decrease of the mobility of interstitials in concentrated al-
loys is associated with a high probability of the repeated capture
of the interstitials by the solute atoms after dissociation of a de-
fect–impurity complex. Within the framework of these considera-
tions, according to the results of theoretical investigations [24], it
is possible to explain completely the main relationships of the ki-
netics of buildup of radiation defects in pure metals, diluted and con-
centrated alloys at temperatures of recovery stages II, associated with
a decrease of the effective mobility of interstitials.
Attention will be also given to the main results of theoretical in-
vestigations carried out by Bocquet [26–28] which make it possi-
ble to interpret qualitatively a number of experimental special features,
associated with the diffusion mobility of interstitials in alloys. The
theory is based on a simple two-frequency model in which the dumbbells
of the type A–A and B–B migrate with frequency ω R . For an self-
interstitial dumbbell A–A, this frequency is also the frequency of
capture of the dumbbell by the atoms of the dissolved element B
resulting in its transformation into a mixed dumbbell A–B. The mixed
dumbbell may dissociate with frequency ω L < ω R. In the schema, the
frequencies ω L and ω R are evidently linked by the relationship:
ωR
θ= = exp ( E AB
B
/ kT ) (2.7)
ωL
B
where E AB is the binding energy of the mixed dumbbell A–B.
Figure 2.3 shows the results of numerical calculations of the ratio
D i (c B )/D i (0) for different θ = ω R /ω L in relation to c B [27].
Figure 2.3 shows that when ω L <<ω R , the mobility of interstitials
in the alloy rapidly decreases. In the limit, the interstitial may be
situated in a trap of atoms B, surrounded by the atoms A, and, con-
sequently, its migration over large distances becomes almost impossible.
The concentrations of the dumbbells A–A, A–B, and B–B at the
total concentration of the interstitials in the alloy A–B, being c i , with
the framework of the models [26, 28] are equal to respectively:
2
cA
cAA = ci PAA = ci (2.8)
c A + cB θ
31
Fig. 2.3. Variation of D i (c B )/D i (0) ratio in relation to the concentration of solute
c B for different values of parameter θ [26–28].
cB θ
c AB = ci PAB = ci
( c A + cB θ ) (2.9)
2
2
cB θ
cBB = ci PBB = ci (2.10)
c A + cB θ
32
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FOOTNOTE:
[1] Read before The Chicago Literary Club, Oct. 12, 1925.
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