VS-MUR2020CT-M3

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Vishay Semiconductors
Ultrafast Rectifier, 2 x 10 A FRED Pt®
Base FEATURES
common
• Ultrafast recovery time
cathode
2 • Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Designed and qualified according to JEDEC®-JESD 47
2
Common • Material categorization: for definitions of compliance
3L TO-220AB cathode
Anode Anode please see www.vishay.com/doc?99912
1 3

DESCRIPTION / APPLICATIONS
PRIMARY CHARACTERISTICS VS-MUR2020CT-M3 is the state of the art ultrafast recovery
rectifier specifically designed with optimized performance of
Package 3L TO-220AB
forward voltage drop and ultrafast recovery time.
IF(AV) 2 x 10 A
The planar structure and the platinum doped life time
VR 200 V
control, guarantee the best overall performance,
VF at IF 0.85 V
ruggedness and reliability characteristics.
trr typ. 19 ns
These devices are intended for use in the output rectification
TJ max. 175 °C
stage of SMPS, UPS, DC/DC converters as well as
Circuit configuration Common cathode freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Peak repetitive reverse voltage VRRM 200 V
per leg 10
Average rectified forward current IF(AV)
total device Rated VR, TC = 145 °C 20
A
Non-repetitive peak surge current per leg IFSM 100
Peak repetitive forward current per leg IFM Rated VR, square wave, 20 kHz, TC = 145 °C 20
Operating junction and storage temperatures TJ, TStg -65 to +175 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, VBR,
IR = 100 μA 200 - -
blocking voltage VR
IF = 8 A, TJ = 125 °C - - 0.85 V
Forward voltage VF IF = 16 A - - 1.15
IF = 16 A, TJ = 125 °C - - 1.05
VR = VR rated - - 15
Reverse leakage current IR μA
TJ = 150 °C, VR = VR rated - - 250
Junction capacitance CT VR = 200 V - 55 - pF
Series inductance LS Measured lead to lead 5 mm from package body - 8.0 - nH

Revision: 02-Aug-17 1 Document Number: 96201

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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 50 A/μs, VR = 30 V - - 35
IF = 0.5 A, IR = 1.0 A, IREC = 0.25 A - - 25
Reverse recovery time trr ns
TJ = 25 °C - 21 -
TJ = 125 °C - 35 -
TJ = 25 °C IF = 10 A - 1.9 -
Peak recovery current IRRM dIF/dt = 200 A/μs A
TJ = 125 °C VR = 160 V - 4.8 -
TJ = 25 °C - 25 -
Reverse recovery charge Qrr nC
TJ = 125 °C - 78 -

THERMAL MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
TJ, TStg -65 - 175 °C
temperature range
per leg - - 2.5
Thermal resistance,
total RthJC
junction to case - - 1.25
device
Thermal resistance, °C/W
RthJA - - 50
junction to ambient per leg
Thermal resistance, Mounting surface, flat, smooth and
RthCS - 0.5 -
case to heatsink greased
- 2.0 - g
Weight
- 0.07 - oz.
6.0 12 kgf · cm
Mounting torque -
(5.0) (10) (lbf · in)
Marking device Case style 3L TO-220AB MUR2020CT

100 100
TJ = 175 °C
IR - Reverse Current (µA)

10 TJ = 150 °C
Forward Current (A)
IF - Instantaneous

10 TJ = 125 °C
1
TJ = 100 °C
TJ = 175 °C
TJ = 125 °C 0.1
1 TJ = 25 °C

0.01
TJ = 25 °C

0.1 0.001
0 0.4 0.8 1.2 1.6 2.0 0 50 100 150 200 250

VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V)

Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage

Revision: 02-Aug-17 2 Document Number: 96201

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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1000

CT - Junction Capacitance (pF)

100 TJ = 25 °C

10
0 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

10
ZthJC - Thermal Impedance (°C/W)

PDM
D = 0.50
D = 0.20 t1

0.1 D = 0.10 t2
D = 0.05
Single pulse D = 0.02 Notes:
(thermal resistance) D = 0.01 1. Duty factor D = t1/t2 .
2. Peak TJ = PDM x ZthJC + TC
.
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics

180 15
Allowable Case Temperature (°C)

Average Power Loss (W)

170 12

RMS limit
160 9
DC
D = 0.01
D = 0.02
150 Square wave (D = 0.50) 6 D = 0.05
Rated VR applied D = 0.10
D = 0.20
140 3
DC D = 0.50
See note (1)
130 0
0 3 6 9 12 15 0 3 6 9 12 15

IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs. Fig. 6 - Forward Power Loss Characteristics
Average Forward Current

Revision: 02-Aug-17 3 Document Number: 96201

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
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50 250
VR = 160 V VR = 160 V
TJ = 125 °C TJ = 125 °C
40 TJ = 25 °C 200 TJ = 25 °C
IF = 20 A
IF = 10 A
30 150 IF = 5 A

Qrr (nC)
trr (ns)

20 100

10 IF = 20 A 50
IF = 10 A
IF = 5 A
0 0
100 1000 100 1000

dIF/dt (A/µs) dIF/dt (A/µs)

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 8 - Typical Stored Charge vs. dIF/dt

Note
(1)
Formula used: TC = TJ - (Pd + PdREV) x RthJC;
Pd = forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = inverse power loss = VR1 x IR (1 - D); IR at VR1 = rated VR

(3)
trr
IF
ta tb
0

(4)
Qrr
(2)
IRRM 0.5 IRRM

di(rec)M/dt (5)

0.75 IRRM

(1) diF/dt

(1) diF/dt - rate of change of current (4) Qrr - area under curve defined by trr
through zero crossing and IRRM

trr x IRRM
(2) IRRM - peak reverse recovery current Qrr =
2
(3) trr - reverse recovery time measured
(5) di(rec)M/dt - peak rate of change of
from zero crossing point of negative
current during tb portion of trr
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.

Fig. 9 - Reverse Recovery Waveform and Definitions

Revision: 02-Aug-17 4 Document Number: 96201

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ORDERING INFORMATION TABLE

Device code VS- MUR 20 20 CT -M3

1 2 3 4 5 6

1 - Vishay Semiconductors product

2 - Ultrafast MUR series
3 - Current rating (20 = 20 A)
4 - Voltage rating (20 = 200 V)
5 - CT = center tap (dual)
6 - Environmental digit:
-M3 = halogen-free, RoHS-compliant, and termination lead (Pb)-free

ORDERING INFORMATION (Example)

PREFERRED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-MUR2020CT-M3 50 1000 Antistatic plastic tube

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?96154
Part marking information www.vishay.com/doc?95028
SPICE model www.vishay.com/doc?95272

Revision: 02-Aug-17 5 Document Number: 96201

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 Outline Dimensions
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Vishay Semiconductors
3L TO-220AB
DIMENSIONS in millimeters and inches

A
(6) 0.014 M B A M
Thermal pad
E A (E)
A1 1
B 2 3
Q ØP (6) A D D
H1 (H1) L1 (2)
C C
D2 (6)
(6) D c

D1 3xb 3 x b2

Detail B
Detail B
A2

L
E1 (6)
C Base metal (b, b2) Plating
A

c c1 (4)
2x e View A - A
e1 (4)
b1, b3
0.015 M B A M Section C - C and D - D

Lead tip
Conforms to JEDEC® outline TO-220AB

MILLIMETERS INCHES MILLIMETERS INCHES

SYMBOL NOTES SYMBOL NOTES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A 4.25 4.65 0.167 0.183 D2 11.68 13.30 0.460 0.524 6, 7
A1 1.14 1.40 0.045 0.055 E 10.11 10.51 0.398 0.414 3, 6
A2 2.50 2.92 0.098 0.115 E1 6.86 8.89 0.270 0.350 6
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105
b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208
b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6
b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2
c1 0.36 0.56 0.014 0.022 4 ØP 3.54 3.91 0.139 0.154
D 14.85 15.35 0.585 0.604 3 Q 2.60 3.00 0.102 0.118
D1 8.38 9.02 0.330 0.355
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4) Dimension b1, b3, and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2, and E1
(7) Outline conforms to JEDEC® TO-220, except D2

Revision: 13-Jun-2019 1 Document Number: 96154

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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