BDX34/A/B/C

BDX34/A/B/C

Power Linear and Switching Applications

• High Gain General Purpose
• Power Darlington TR
• Complement to BDX33/33A/33B/33C respectively

1 TO-220

1.Base 2.Collector 3.Emitter

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol Parameter Value Units
VCBO Collector-Base Voltage
: BDX34 - 45 V
: BDX34A - 60 V
: BDX34B - 80 V
: BDX34C - 100 V
VCEO Collector-Emitter Voltage
: BDX34 - 45 V
: BDX34A - 60 V
: BDX34B - 80 V
: BDX34C - 100 V
IC Collector Current (DC) - 10 A
ICP *Collector Current (Pulse) - 15 A
IB Base Current - 0.25 A
PC Collector Dissipation (TC=25°C) 70 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BDX34/A/B/C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) * Collector-Emitter Sustaining Voltage
: BDX34 IC = -100mA, IB = 0 - 45 V
: BDX34A - 60 V
: BDX34B - 80 V
: BDX34C - 100 V
VCER(sus) * Collector-Emitter Sustaining Voltage
: BDX34 IC = -1 00mA, IB = 0 - 45 V
: BDX34A RBE = 100Ω - 60 V
: BDX34B - 80 V
: BDX34C - 100 V
VCEV(sus) * Collector-Emitter Sustaining Voltage
: BDX34 IC = - 100mA, IB = 0 - 45 V
: BDX34A VBE = - 1.5V - 60 V
: BDX34B - 80 V
: BDX34C - 100 V
ICBO Collector Cut-off Current
: BDX34 VCB = - 45V, IE = 0 - 0.2 mA
: BDX34A VCB = - 60V, IE = 0 - 0.2 mA
: BDX34B VCB = - 80V, IE = 0 - 0.2 mA
: BDX34C VCB = - 100V, IE = 0 - 0.2 mA
ICEO Collector Cut-off Current
: BDX34 VCE = - 22V, IB = 0 - 0.5 mA
: BDX34A VCE = - 30V, IB = 0 - 0.5 mA
: BDX34B VCE = - 40V, IB =0 - 0.5 mA
: BDX34C VCE = - 50V, IB = 0 - 0.5 mA
IEBO Emitter Cut-off Current VEB = - 5V, IC = 0 -5 mA
hFE * DC Current Gain
: BDX34/34A VCE = - 3V, IC = - 4A 750
: BDX34B/34C VCE = - 3V, IC = - 3A 750
VCE(sat) * Collector-Emitter Saturation Voltage
: BDX34/34A IC = - 4A, IB = - 8mA - 2.5 V
: BDX34B/34C IC = - 3A, IB = - 6mA - 2.5 V
VBE(on) * Base-Emitter ON Voltage
: BDX34/34A VCE = - 3V, IC = - 4A - 2.5 V
: BDX34B/34C VCE = - 3V, IC = - 3A - 2.5 V
VF * Parallel Diode Forward Voltage IF = - 8A -4 V
* Pulse Test: PW=300µs, duty Cycle =1.5% Pulsed

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BDX34/A/B/C
Typical Characteristics

100k -10

VCE = -3V IC= 250IB

VCE(sat) [V], SATURATION VOLTAGE

hFE, DC CURRENT GAIN

10k

-1

1k

100 -0.1
-0.1 -1 -10 -0.1 -1 -10

IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT

Figure 1. DC Current Gain Figure 2. Collector-Emitter Saturation Voltage

-10.0 1000

VCE= -3V f = 1MHz

IE = 0
IC[A], COLLECTOR CURRENT

-7.5
Cob [pF], CAPACTIANCE

-5.0 100

-2.5

-0.0 10
-0 -1 -2 -3 -4 -1 -10 -100

VBE[V], BASE-EMITTER VOLTAGE VCB [V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter On Voltage Figure 4. Output Capacitance

-100 80

70
IC [A], COLLECTOR CURRENT

PD [W], POWER DISSIPATION

IC MAX. (Pulsed) 5 ms 1 ms 100 us 60

10 us
-10
50
IC MAX. (Continuous)
DC 40

30
-1

BDX34 20
BDX34A
BDX34B 10
BDX34C

-0.1 0
-1 -10 -100 -1000 0 25 50 75 100 125 150 175 200

o
VCE [V], COLLECTOR-EMITTER VOLTAGE Tc [ C], CASE TEMPERATURE

Figure 5. Safe Operating Area Figure 6. Power Derating

©2000 Fairchild Semiconductor International Rev. A, February 2000

 BDX34/A/B/C
Package Demensions

TO-220

1.30 ±0.10 9.90 ±0.20 4.50 ±0.20

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

©2000 Fairchild Semiconductor International Rev. A, February 2000

 TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ HiSeC™ SuperSOT™-8

Bottomless™ ISOPLANAR™ SyncFET™
CoolFET™ MICROWIRE™ TinyLogic™
CROSSVOLT™ POP™ UHC™
E2CMOS™ PowerTrench® VCX™
FACT™ QFET™
FACT Quiet Series™ QS™
FAST® Quiet Series™
FASTr™ SuperSOT™-3
GTO™ SuperSOT™-6

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or In This datasheet contains the design specifications for
Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

©2000 Fairchild Semiconductor International Rev. E

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