What is a MOSFET?
It’s Types, Working, Circuit, and Applications
A Metal Oxide Semiconductor Field-effect Transistor (MOSFET, MOS-FET, or
MOS FET) is a field-effect transistor (FET with an insulated gate) where the
voltage determines the conductivity of the device.
It is used for switching or amplifying signals. The ability to change conductivity
with the amount of applied voltage can be used for amplifying or switching
electronic signals.
MOSFETs are now even more common than BJTs (bipolar junction transistors)
in digital and analog circuits.
Different Types of MOSFET
MOSFET works in two modes-
1. Depletion Mode: The transistor requires the Gate-Source voltage (VGS) to
switch the device “OFF”. The depletion-mode MOSFET is equivalent to a
“Normally Closed” switch.
2. Enhancement Mode: The transistor requires a Gate-Source voltage (VGS) to
switch the device “ON”. The enhancement mode MOSFET is equivalent to a
“Normally Open” switch.
MOSFET Working Operation
The working principle of a MOSFET depends upon the MOS capacitor. The MOS
capacitor is the main part of MOS-FET. The semiconductor surface at the below
oxide layer is located between the source and drain terminals. It can be inverted
from p-type to n-type by applying positive or negative gate voltages.
When we apply positive gate voltage, the holes present under the oxide layer
experience a repulsive force, and holes are pushed downward with the
substrate.
The depletion region is populated by the bound negative charges that are
associated with the acceptor atoms. The electrons reach, and the channel is
formed. The positive voltage also attracts electrons from the n+ source and drain
regions into the channel.
Now, if a voltage is applied between the drain and source, the current flows freely
between the source and drain and the gate voltage controls the electrons in the
channel. If we apply negative voltage, a hole channel will be formed under the
oxide layer.
A metal-oxide-semiconductor (MOS) capacitor is a structure made of three layers that's used in
semiconductor technology. It's a fundamental component of MOSFETs (metal-oxide-semiconductor
field-effect transistors) and integrated circuits.
What it's made of
Metal gate: Usually made of aluminum or polysilicon, this is the top plate of the capacitor
Dielectric oxide: A thin layer of insulating oxide, usually silicon dioxide (SiO2), that sits beneath
the metal gate
Semiconductor substrate: Commonly silicon, which can be either p-type or n-type
How it works
Applying a voltage to the metal gate changes the distribution of electrical carriers in the
semiconductor
The capacitance value of MOS capacitors depends on the DC voltage applied at the gate
The varying voltage changes the depletion areas at the gate, altering the dielectric properties
and modifying the capacitance
Uses
MOS capacitors are used in the fabrication of integrated circuits and MOSFETs
They're also used for evaluating the MOS IC fabrication process and for predicting the MOS
transistor characteristics
Light-sensitive MOS capacitors are at the heart of charge-coupled devices (CCDs)
C-V Characteristics :
MOS Capacitor Defined: An MOS capacitor is a structure that consists of a metal gate, a
semiconductor body, and an insulating layer of silicon dioxide.
Capacitance and Voltage: The capacitance of an MOS capacitor changes depending on the
voltage applied to the gate, affecting how charges are distributed within the device.
C-V Curve Analysis: The capacitance-voltage curve helps identify the capacitor’s behavior in
different charge accumulation states, crucial for understanding and designing circuits with
MOS capacitors.
A junction field-effect transistor (JFET) is a semiconductor device that controls current with a low-power
electrical signal. JFETs are commonly used in amplifiers, switches, voltage-controlled resistors, and other
electronic devices.
Features of JFETs
Voltage-controlled: JFETs are voltage-controlled devices, unlike bipolar junction transistors
(BJTs).
Unidirectional: JFETs are unidirectional because only the majority of charge carriers are
responsible for the current flow.
Normally-on: JFETs are normally-on devices, meaning that no voltage applied to the gate allows
maximum current through the source and drain.
Low noise: JFETs have low noise.
High-input impedance: JFETs have high-input impedance.
Negative temperature coefficient: JFETs have a negative temperature coefficient at high current
levels.
Uses of JFETs
Switches: JFETs can be used as on/off switches to control electrical power to a load.
Amplifiers: JFETs can be used to build amplifiers.
Voltage-controlled resistors: JFETs can be used as voltage-controlled resistors.
Types of JFETs
JFETs are classified into two types based on the source of current flow: N-channel JFET and P-
channel JFET.
VI characteristics of pn junction diode
A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor
creating a potential barrier voltage across the diode junction
there are two operating regions and three possible “biasing” conditions for the standard Junction
Diode and these are:
1. Zero Bias – No external voltage potential is applied to the PN junction diode.
2. Reverse Bias – The voltage potential is connected negative, (-ve) to the P-type
material and positive, (+ve) to the N-type material across the diode which has the effect
of Increasing the PN junction diode’s width.
3. Forward Bias – The voltage potential is connected positive, (+ve) to the P-type
material and negative, (-ve) to the N-type material across the diode which has the effect
of Decreasing the PN junction diodes width.
Junction Diode Symbol and Static I-V Characteristics
BJT- Bipolar Junction Transistor
Working of BJT:
The figure shown below shows the operation of the BJT in the active region,
where the base-emitter junction is forward biased, while the collector-base
junction is reverse biased.
Voltage Notations for the BJT:
Voltage VBE – Voltage between the base and the emitter (VB – VE)
VB – Voltage between the base and the ground
VE– Voltage between the emitter and the ground
Voltage VCE- Voltage between the collector and the emitter
VCE = VC – VE
(Please note voltage VBE = – VBE and VCE = -VEC)
Voltage VBB and VCC are the supply voltages.
As mentioned earlier, in BJT, the emitter is heavily doped and has a large number
of electrons as majority carriers. (for NPN transistor).As shown in the figure, when
the voltage is applied between the base and the emitter then the negative
voltage at the emitter pushes these electrons towards the base region.
Once the electrons enter into the base region, there are two paths for the
electrons. One is, the electrons can flow towards the positive terminal V BB through
the base resistor. Or they can flow towards the collector region.
