MIXA30WB1200TED

Converter - Brake - Inverter Three Phase

Rectifier
Brake
Chopper
Three Phase
Inverter
Module VRRM = 1600 V VCES = 1200 V VCES = 1200 V

XPT IGBT IDAVM = 105 A IC25 = 17 A IC25 = 43 A

IFSM = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V

Part name (Marking on product)

MIXA30WB1200TED

21 22

D11 D13 D15 D7 D1 D5

T1 18 D3 20
T3 T5 NTC
16
7 17 19 8

1 2 3 15 6 5 4

D12 D14 D16 D2 D4 D6

14 T7 11 T2 12 T4
13
T6 9
E 72873
10

Pin configuration see outlines.

23 24

Features: Application: Package:

• Easy paralleling due to the positive • AC motor drives • "E2-Pack" standard outline
temperature coefficient of the on-state • Solar inverter • Insulated copper base plate
voltage • Medical equipment • Soldering pins for PCB mounting
• Rugged XPT design • Uninterruptible power supply • Temperature sense included
(Xtreme light Punch Through) results in: • Air-conditioning systems
- short circuit rated for 10 µsec. • Welding equipment
- very low gate charge • Switched-mode and
- low EMI resonant-mode power supplies
• Thin wafer technology combined with
the XPT design results in a competitive
low VCE(sat)
• SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage

IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 1-8

 MIXA30WB1200TED

Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES max. DC gate voltage continuous ±20 V
VGEM max. transient collector gate voltage transient ±30 V
IC25 collector current TC = 25°C 43 A
IC80 TC = 80°C 30 A

Ptot total power dissipation TC = 25°C 150 W

VCE(sat) collector emitter saturation voltage IC = 25 A; VGE = 15 V TVJ = 25°C 1.8 2.1 V
TVJ = 125°C 2.1 V
VGE(th) gate emitter threshold voltage IC = 1 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C 0.02 1.5 mA
TVJ = 125°C 0.2 mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 25 A 76 nC
td(on) turn-on delay time 70 ns
tr current rise time 40 ns
inductive load TVJ = 125°C
td(off) turn-off delay time 250 ns
VCE = 600 V; IC = 15 A
tf current fall time 100 ns
VGE = ±15 V; RG = 39 W
Eon turn-on energy per pulse 2.5 mJ
Eoff turn-off energy per pulse 3.0 mJ
RBSOA reverse bias safe operating area VGE = ±15 V; RG = 39 W; TVJ = 125°C
VCEK = 1200 V 75 A
SCSOA short circuit safe operating area
tSC short circuit duration VCE = 900 V; VGE = ±15 V; TVJ = 125°C 10 µs
ISC short circuit current RG = 39 W; non-repetitive 100 A
RthJC thermal resistance junction to case (per IGBT) 0.84 K/W

Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V
IF25 forward current TC = 25°C 44 A
IF80 TC = 80°C 30 A
VF forward voltage IF = 30 A; VGE = 0 V TVJ = 25°C 1.95 2.2 V
TVJ = 125°C 1.95 V
Qrr reverse recovery charge 3.5 µC
VR = 600 V
IRM max. reverse recovery current 30 A
diF /dt = -600 A/µs TVJ = 125°C
trr reverse recovery time 350 ns
IF = 30 A; VGE = 0 V
Erec reverse recovery energy 0.9 mJ
RthJC thermal resistance junction to case (per diode) 1.2 K/W
TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 2-8

 MIXA30WB1200TED

Brake T7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 25°C 1200 V
VGES max. DC gate voltage continuous ±20 V
VGEM max. transient collector gate voltage transient ±30 V
IC25 collector current TC = 25°C 17 A
IC80 TC = 80°C 12 A
Ptot total power dissipation TC = 25°C 60 W
VCE(sat) collector emitter saturation voltage IC = 9 A; VGE = 15 V TVJ = 25°C 1.8 2.1 V
TVJ = 125°C 2.1 V
VGE(th) gate emitter threshold voltage IC = 0.3 mA; VGE = VCE TVJ = 25°C 5.4 6.0 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C 0.1 mA
TVJ = 125°C 0.1 mA
IGES gate emitter leakage current VGE = ±20 V 500 nA
QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A 28 nC
td(on) turn-on delay time 70 ns
tr current rise time 40 ns
inductive load TVJ = 125°C
td(off) turn-off delay time 250 ns
VCE = 600 V; IC = 10 A
tf current fall time 100 ns
VGE = ±15 V; RG = 100 W
Eon turn-on energy per pulse 1.1 mJ
Eoff turn-off energy per pulse 1.1 mJ
RBSOA reverse bias safe operating area VGE = ±15 V; RG = 100 W; TVJ = 125°C
VCEK = 1200 V 30 A
SCSOA short circuit safe operating area
tSC short circuit duration VCE = 900 V; VGE = ±15 V; TVJ = 125°C 10 µs
ISC short circuit current RG = 100 W; non-repetitive 40 A
RthJC thermal resistance junction to case (per IGBT) 2.0 K/W

Brake Chopper D7
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V
IF25 forward current TC = 25°C 12 A
IF80 TC = 80°C 8 A
VF forward voltage IF = 5 A; VGE = 0 V TVJ = 25°C 1.95 2.2 V
TVJ = 125°C 1.95 V
IR reverse current VR = VRRM TVJ = 25°C 0.5 mA
TVJ = 125°C 0.5 mA
Qrr reverse recovery charge 0.6 µC
VR = 600 V
IRM max. reverse recovery current 6 A
diF /dt = 200 A/µs TVJ = 125°C
trr reverse recovery time 350 ns
IF = 5 A; VGE = 0 V
Erec reverse recovery energy 0.2 mJ
RthJC thermal resistance junction to case (per diode) 3.4 K/W
TC = 25°C unless otherwise stated

IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 3-8

 MIXA30WB1200TED

Input Rectifier Bridge D11 - D16

Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IFAV average forward current sine 180° TC = 80°C 37 A
IDAVM max. average DC output current rect.; d = 1/3 TC = 80°C 105 A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C 320 A
TVJ = 125°C 280 A
I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C 510 A2s
TVJ = 125°C 390 A2s
Ptot total power dissipation TC = 25°C 110 W
VF forward voltage IF = 50 A TVJ = 25°C 1.34 1.7 V
TVJ = 125°C 1.34 V
IR reverse current VR = VRRM TVJ = 25°C 0.02 mA
TVJ = 125°C 0.2 mA
RthJC thermal resistance junction to case (per diode) 1.1 K/W

Temperature Sensor NTC

Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25 resistance TC = 25°C 4.75 5.0 5.25 kW
B25/50 3375 K

Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ operating temperature -40 125 °C
TVJM max. virtual junction temperature 150 °C
Tstg storage temperature -40 125 °C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
CTI comparative tracking index -
Md mounting torque (M5) 3 6 Nm
dS creep distance on surface 6 mm
dA strike distance through air 6 mm
Rpin-chip resistance pin to chip 5 mW
RthCH thermal resistance case to heatsink with heatsink compound 0.02 K/W
Weight 180 g

Equivalent Circuits for Simulation

I R0
V0 Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0 rectifier diode D8 - D13 TVJ = 150°C 0.88 V
R0 9 mW
V0 IGBT T1 - T6 TVJ = 150°C 1.1 V
R0 55 mW
V0 free wheeling diode D1 - D6 TVJ = 150°C 1.2 V
R0 27 mW
V0 IGBT T7 TVJ = 150°C 1.1 V
R0 153 mW
V0 free wheeling diode D7 TVJ = 150°C 1.15 V
R0 170 mW
TC = 25°C unless otherwise stated
IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 4-8

 MIXA30WB1200TED

Circuit Diagram

21 22

D11 D13 D15 D7 D1 D3 D5

16 T1 18 T3 20 T5 NTC

7 15 17 19 8

1 2 3 6 5 4

D12 D14 D16 D2 D4 D6

14 T7 11 T2 12 T4 13 T6 9

10

23 24

Outline Drawing Dimensions in mm (1 mm = 0.0394“)

Product Marking
2D Data Matrix: Part number
FOSS-ID 6 digits
Batch # 6 digits M = Module
I = IGBT
X = XPT
XXXXXXXXXX yywwx A = Standard
30 = Current Rating [A]
Logo UL Part name Date Code Location WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit
1200 = Reverse Voltage [V]
T = NTC
ED = E2-Pack

Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIXA30WB1200 TED MIXA30WB1200TED Box 6 509 119

IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 5-8

 MIXA30WB1200TED

Inverter T1 - T6
50 50
VGE = 15 V 13 V
VGE = 15 V
17 V 11 V
40 19 V
40

30 30 TVJ = 125°C
TVJ = 25°C
IC IC
TVJ = 125°C
[A] 20 [A] 20
9V

10 10

0 0
0 1 2 3 0 1 2 3 4 5
VCE [V] VCE [V]
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics

50 20
IC = 25 A
VCE = 600 V
40
15

IC 30 VGE
10
[A] [V]
20

TVJ = 125°C 5
10

TVJ = 25°C
0 0
5 6 7 8 9 10 11 12 13 0 20 40 60 80 100
VGE [V] QG [nC]
Fig. 3 Typ. tranfer characteristics Fig. 4 Typ. turn-on gate charge

4.0
6 RG = 39 Ω Eon
VCE = 600 V 3.5
5 VGE = ±15 V Eoff
TVJ = 125°C 3.0
Eoff
4 2.5
E Eon
E IC = 25 A
2.0
[mJ] 3 [mJ]
VCE = 600 V
VGE = ±15 V
1.5
2 TVJ = 125°C
1.0
1
0.5
0 0.0
0 10 20 30 40 50 20 40 60 80 100 120 140 160
IC [A] RG [Ω ]
Fig. 5 Typ. switching energy vs. collector current Fig. 6 Typ. switching energy vs. gate resistance
IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 6-8

 MIXA30WB1200TED

Inverter D1 - D6
60 7
TVJ = 125°C
50 6 VR = 600 V

60 A
40 5
IF Qrr
30 4
30 A
[A] [µC]
20 3
TVJ = 125°C 15 A
TVJ = 25°C
10 2

0 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 300 400 500 600 700 800 900 1000 1100
VF [V] diF /dt [A/µs]
Fig. 7 Typ. Forward current versus VF Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt

70 700
TVJ = 125°C 60 A TVJ = 125°C
60 600
VR = 600 V VR = 600 V

50 30 A
500
IRR
40 trr 400
15 A
[A] 30 [ns] 300
60 A
30 A
20 200 15 A

10 100

0 0
300 400 500 600 700 800 900 1000 1100 300 400 500 600 700 800 900 1000 1100
diF /dt [A/µs] diF /dt [A/µs]
Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt

2.0 10
TVJ = 125°C
VR = 600 V
1.6
60 A Diode
1
30 A IGBT
Erec 1.2 ZthJC

[mJ] [K/W] IGBT FRD

0.8 15 A Ri ti Ri ti
0.1
1 0.18 0.0025 0.3413 0.0025
0.4 2 0.14 0.03 0.2171 0.03
3 0.36 0.03 0.3475 0.03
4 0.16 0.08 0.2941 0.08
0.0 0.01
300 400 500 600 700 800 900 1000 1100 0.001 0.01 0.1 1 10
diF /dt [A/µs] tp [s]
Fig.11 Typ. recovery energy Erec versus di/dt Fig. 12 Typ. transient thermal impedance
IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 7-8

 MIXA30WB1200TED

Brake T7 & D7

20 10
VGE = 15 V

16 8

12 6
IC TVJ = 25°C IF

[A] 8 [A]
4
TVJ = 125°C

TVJ = 125°C
4 2
TVJ = 25°C

0 0
0 1 2 3 0.0 0.5 1.0 1.5 2.0 2.5 3.0
VCE [V] VF [V]
Fig. 13 Typ. output characteristics Fig. 14 Typ. forward characteristics

10 100000

diode
10000

IGBT
ZthJC R
1 1000
[K/W] [Ω]
Inverter-IGBT Inverter-FRD
Ri ti Ri ti
1 0.446 0.002 1.005 0.002 100
2 0.415 0.03 0.856 0.03
3 0.672 0.03 1.494 0.03
4 0.467 0.08 0.045 0.08
0.1 10
0.001 0.01 0.1 1 10 0 25 50 75 100 125 150
tP [s] TC [°C]

Fig. 15 Typ. transient thermal impedance Fig.16 Typ. NTC resistance vs. temperature

IXYS reserves the right to change limits, test conditions and dimensions. 20110916c

© 2011 IXYS All rights reserved 8-8