Scribd
Upload
30 views5 pages

2sa1301 160V 12a BJT PNP

The document provides the product specification for the Silicon PNP Power Transistor 2SA1301, detailing its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It is suitable for power amplifier applications, particularly in high fidelity audio frequency amplifier output stages. The document includes important electrical parameters and package outlines necessary for integration into electronic designs.

Uploaded by

marcel.mazzi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
30 views5 pages

2sa1301 160V 12a BJT PNP

The document provides the product specification for the Silicon PNP Power Transistor 2SA1301, detailing its description, applications, pin configuration, absolute maximum ratings, and key characteristics. It is suitable for power amplifier applications, particularly in high fidelity audio frequency amplifier output stages. The document includes important electrical parameters and package outlines necessary for integration into electronic designs.

Uploaded by

marcel.mazzi
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 5

SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1301

DESCRIPTION
·With TO-3PL package
·Complement to type 2SC3280

APPLICATIONS
·Power amplifier applications
·Recommended for 80W high fidelity audio
frequency amplifier output stage

PINNING

PIN DESCRIPTION

1 Emitter

Collector;connected to
2
mounting base
Fig.1 simplified outline (TO-3PL) and symbol
3 Base

Absolute maximum ratings(Ta=25 )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -160 V

VCEO Collector-emitter voltage Open base -160 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -12 A

IB Base current -1.2 A

PC Collector power dissipation TC=25 120 W

Tj Junction temperature 150

Tstg Storage temperature -55~150

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1301

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;IB=0 -160 V

VCEsat Collector-emitter saturation voltage IC=-8A ;IB=-0.8A -0.9 -2.5 V

VBE Base-emitter voltage IC=-6A ; VCE=-5V -1.0 -1.5 V

ICBO Collector cut-off current VCB=-160V; IE=0 -5 µA

IEBO Emitter cut-off current VEB=-5V; IC=0 -5 µA

hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160

hFE-2 DC current gain IC=-6A ; VCE=-5V 35

fT Transition frequency IC=-1A ; VCE=-5V 30 MHz

COB Collector output capacitance f=1MHz;VCB=-10V 480 pF

hFE-1 classifications

R O

55-110 80-160

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1301

PACKAGE OUTLINE

Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm)

Downloaded from: http://www.datasheetcatalog.com/


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors 2SA1301

Downloaded from: http://www.datasheetcatalog.com/


This datasheet has been downloaded from:

www.DatasheetCatalog.com

Datasheets for electronic components.

Downloaded from: http://www.datasheetcatalog.com/

You might also like