ST7GEME4

Full-speed USB MCU with smartcard firmware

and EMV/non-EMV interface

Features
24
■ Clock, reset and supply management
– Low voltage reset 1

– Halt power saving mode VFQFPN24 SO24(9U)

s )
– PLL for generating 48 MHz USB clock
c t(
– Internal Step-up converter for 5V supplied

■
using a 4 MHz crystal
USB (Universal Serial Bus) interface
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Smartcards (with a current of up to 55mA)

– USB 2.0 compliant

r o
using only two external components.
– Programmable smartcard internal voltage
– CCID V1.0
P
regulator (1.8 to 3.0 V) with current
e
– Full speed, hubless
– Bus-powered, low consumption
le t
overload protection and 4 kV ESD
protection (Human Body Model) for all
■ Serial RS232 interface
s o smartcard interface I/Os

– Transmission rate: 9.6 Kbps to 115 Kbps

– Format: 8-bit, no parity
O
■
b Development tools
– Application note on PCB recommendations
– Auto baud rate
) - and component bill of materials
– Full hardware/software kit for performance
– CCID V1.0 on serial TTL link
t ( s evaluation
■ ISO 7816-3 UART interface
– 4 Mhz clock generation
u c Description
o d
– Synchronous/Asynchronous protocols

Pr
(T=0, T=1) The ST7GEME4 is an 8-bit microcontroller
– Automatic retry on parity error dedicated to smartcard reading applications. It

t e
– Programmable baud rate from 372 to
e
has been developed to be the core of smartcard
readers communicating through a serial or USB

ol
11.625 clock pulses (D=32/F=372)
link. It is pre-programmed using Gemplus
– Card insertion/removal detection
■
b s
Smartcard power supply
software, and offers a single integrated circuit
solution with very few external components.

O – Selectable card VCC: 1.8 V, 3 V, and 5 V

Table 1. Device summary
Order codes
Features
ST7GEME4M1 ST7GEME4U1
Program memory 16K ROM
User RAM + USB data buffer (bytes) 512 + 256
Peripherals USB Full-Speed (7 Ep), TBU, Watchdog timer, ISO 7816-3 Interface
Operating Supply 4.0 to 5.5 V
Package SO24 VFQFPN24
CPU Frequency 4 or 8 MHz
Operating temperature 0 to +70 °C

September 2007 Rev 2.0 1/28

www.st.com 1
Contents ST7GEME4

Contents

1 Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 ST7GEME4 implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.1 Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
3.2 Smartcard interface features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
s )
3.3
c
EMV versus PC/SC-ISO mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 t(
d u
4
o
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
r
4.1
P
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
e
4.2
t
Recommended operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
le
4.3
o
Supply and reset characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
s
4.4
4.4.1
O b
Clock and timing characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
General timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
4.4.2
) -
Crystal resonator oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
4.5
t ( s
Memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
4.6
u c
Smartcard supply supervisor electrical characteristics . . . . . . . . . . . . . . 19
4.7
o d
EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21

P r 4.7.1 Functional EMS (electromagnetic susceptibility) . . . . . . . . . . . . . . . . . . 21

e
let
4.7.2 Electromagnetic interference (EMI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
4.7.3 Absolute maximum ratings (electrical sensitivity) . . . . . . . . . . . . . . . . . 23

s o 4.8 Communication interface characteristics . . . . . . . . . . . . . . . . . . . . . . . . . 24

O
5
b Package characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
5.1 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25

6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

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 ST7GEME4 List of tables

List of tables

Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table 2. Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Table 3. Technical features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Table 4. Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 5. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 6. General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 7. Current injection on I/O port and control pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 8. Current consumption . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Table 9.
)
I/O port pins characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15

s
t(
Table 10. LED pins characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 11. Low voltage detector and supervisor characteristics (LVDS) . . . . . . . . . . . . . . . . . . . . . . . 16
Table 12.
u c
General timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 13.
d
External clock source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

o
Table 14.
Table 15.
Table 16.
r
Crystal resonator oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

P
Typical crystal resonator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Recommended values for 4 MHz crystal resonator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Table 17.
t e
RAM and hardware registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 18.
Table 19.
o le
Smartcard supply supervisor characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
EMS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Table 20.
Table 21. b s
EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 22.
- O
Electrical sensitivities . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 23.
Table 24.
( s )
USB DC electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
USB full speed electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 25.
t
24-lead very thin fine pitch quad flat no-lead 5x5mm,0.65mm pitch, mechanical data. . . . 25
c
Table 26.
Table 27.
d u
24-pin plastic small outline package- 300-mil width, mechanical data . . . . . . . . . . . . . . . . 26
Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27

r o
e P
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 List of figures ST7GEME4

List of figures

Figure 1. ST7GEME4 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Figure 2. 24-lead VFQFPN package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 3. 24-pin SO package pinout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 4. Smartcard interface reference application - 24-pin SO package . . . . . . . . . . . . . . . . . . . . . 9
Figure 5. Typical application with an external clock source . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 6. Typical application with a crystal resonator . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 7. USB data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 8. 24-lead very thin fine pitch quad flat no-lead 5x5 mm 0.65 mm pitch, package outline . . . 25
Figure 9. 24-pin plastic small outline package- 300-mil width, package outline. . . . . . . . . . . . . . . . . 26

s )
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e P
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4/28
 ST7GEME4 Introduction

1 Introduction

The ST7GEME4 device is a member of the ST7 microcontroller family designed for USB
applications. All devices are based on a common industry-standard 8-bit core, featuring an
enhanced instruction set.
The ST7GEME4 is factory-programmed ROM devices and as such are not
reprogrammable.
It operates at a 4 MHz external oscillator frequency.
Under software control, all devices can be placed in Halt mode, reducing power
consumption when the application is in idle or stand-by state.
s )
The enhanced instruction set and addressing modes of the ST7 offer both power and

c t(
flexibility to software developers, enabling the design of highly efficient and compact
u
application code. In addition to standard 8-bit data management, all ST7 microcontrollers
d
o
feature true bit manipulation, 8x8 unsigned multiplication and indirect addressing modes.
r
bytes of user RAM and the following on-chip peripherals:
e P
The ST7GEME4 includes an ST7 Core, up to 16 Kbytes of program memory, up to 512

le t
USB full speed interface with 7 endpoints, programmable in/out configuration and
embedded 3.3 V voltage regulator and transceivers (no external components are
needed).
s o
●
11.625 clock pulses
O b
ISO 7816-3 UART interface with programmable baud rate from 372 clock pulses up to

●
) -
Smartcard supply block able to provide programmable supply voltage and I/O voltage
levels to the smartcards

t ( s
Low voltage reset ensuring proper power-on or power-off of the device (selectable by
●
option)
u c
●

o d
8-bit timer (TBU)

P r
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O

5/28
 Introduction ST7GEME4

Figure 1. ST7GEME4 block diagram

OSCIN 4MHz
PA[1:0]
OSCOUT OSCILLATOR PORT A

PLL
48 MHz 8 MHz
DIVIDER
or 4 MHz
USB
DATA

ADDRESS AND DATA BUS

BUFFER
(256 bytes)
LED0
LED

s )
t(
USBDP
USBDM ISO 7816 UART
USB
USBVCC
SUPPLY
u c
8-BIT TIMER MANAGER

o d
PA6 CONTROL
P r DIODE

VPP 8-BIT CORE

e t eDC/DC
SELF
CRDVCC

ol
ALU CONVERTER
CRDDET
LVD

b s CRDIO
CRDC4

O
RAM
(512 Bytes) CRDC8

)-
3V/1.8V Vreg CRDRST
PROGRAM

t(s
MEMORY CRDCLK
(16K Bytes)

u c
o d
P r
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s ol
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6/28
 ST7GEME4 Pin description

2 Pin description

Figure 2. 24-lead VFQFPN package pinout

DIODE
GNDA

VDDA
SELF
GND

VDD
24 23 22 21 20 19
CRDVCC 1 18 USBVCC

CRDRST 2 17 DP
s )
CRDCLK 3 16 DM
c t(
C4 4 15 LED0
d u
CRDIO 5 14
r
PA6 o
C8 6
e 13 P
7 8 9 10

l
11
e t
12
VPP

s o
CRDDET

ICCCLK/WAKUP2

NC

OSCIN
ICCDATA/WAKUP2/

OSCOUT

O b
) -
( s
u ct
Figure 3.
o d
24-pin SO package pinout

P r
e t e DIODE
GNDA
1
2
24
23
SELF
VDD

o l GND
CRDVCC
3
4
22
21
VDDA
USBVcc

b s CRDRST
CRDCLK
5
6
20
19
DP
DM
O C4
CRDIO
C8
7
8
9
18
17
16
LED0
PA6
VPP
CRDDET 10 15 OSCOUT
ICCDATA/WAKUP2/ 11 14 OSCIN
ICCCLK/WAKUP2/P 12 13 NC

7/28
Pin description ST7GEME4

Legend / Abbreviations
● Type: I = input, O = output, S = supply
● In/Output level: CT = CMOS 0.3VDD/0.7VDD with input trigger
● Output level: HS = 10mA high sink (on N-buffer only)
● Port and control configuration:
– Input: float = floating, wpu = weak pull-up, int = interrupt, ana = analog
– Output: OD = open drain, PP = push-pull

Table 2. Pin description

VCARD supplied
Pin number Level Port / Control
Main
s )
t(
VFQFPN24

Type

Input Output
Output
Pin name function Alternate function
c
SO24

Input

(after reset)
wpu
u
OD

PP
int d
2 5 CRDRST O CT X X Smartcard reset
r o
3 6 CRDCLK O CT X X Smartcard clock
e P
4 7 C4 O CT X X
le t
Smartcard C4

so
5 8 CRDIO I/O CT X X X Smartcard I/O

Ob
6 9 C8 O CT X X Smartcard C8
C

)-
7 10 CRDDET I X Smartcard detection
T

8 11
PA0/WAKUP2/
ICCDATA
I/O
t (
CTs X X X X Port A0
Interrupt, In-circuit
communication data input
c
du
PA1/WAKUP2/ Interrupt, In-circuit
9 12 I/O CT X X X X Port A1
ICCCLK communication clock input

r o C
11 14 OSCIN

e P T
Input/output oscillator pins. These pins
connect a 4 MHz parallel-resonant crystal, or
12 15

l e tOSCOUT CT an external source to the on-chip oscillator.

so
13 16 VPP S Must be held low in normal operating mode.
C

Ob
14 17 PA6 I PA6
T

15 18 LED0 O HS X Constant current output

16 19 DM I/O CT USB Data Minus line
17 20 DP I/O CT USB Data Plus line
18 21 USBVCC O CT 3.3 V output for USB
19 22 VDDA S Power Supply voltage 4-5.5 V
20 23 VDD S Power Supply voltage 4-5.5 V
An external inductance must be connected to
21 24 SELF O CT
these pins for the step up converter
An external diode must be connected to this
22 1 DIODE S CT
pin for the step up converter

8/28
 ST7GEME4 Pin description

Table 2. Pin description (continued)

VCARD supplied
Pin number Level Port / Control
Main
VFQFPN24

Type
Input Output

Output
Pin name function Alternate function
SO24

Input
(after reset)

wpu

OD

PP
int
23 2 GNDA S
Ground
24 3 GND S
1 4 CDRVCC O CT X Smartcard supply pin

Figure 4. Smartcard interface reference application - 24-pin SO package

s )
VDD
c t(
C1
d u
L1
r o
D1

e P
C3
DIODE SELF
le t VDD
GNDA
GND
VDD
VDDA
s o
CRDVCC USBVcc
b R
C2

-O
C4 CRDRST DP D+
C5 CRDCLK DM D-
LED
C4
) LED0 VDD
C6 CRDIO

( s PA6

ct
C8 VPP CL1
CRDDET OSCOUT

d u PA0
PA1
OSCIN
NC CL2

r o
P
1. Mandatory values for the external components:
e
C3 = 1 nF;

l t
C1 = 4.7 µF; C2 = 100 nF. C1 and C2 must be located close to the chip (refer to Section 4.4.2.).

e
C4 = 4.7 µF ESR 0.5 Ω.

s o
C5 : 470 pF;
C6 : 100 pF;

O b R : 1.5kΩ;
L1 : 10 µH, 2 Ω;
Crystal 4.0 MHz; Impedance max100 Ω
D1: BAT42 SHOTTKY.

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ST7GEME4 implementation ST7GEME4

3 ST7GEME4 implementation

The ST7GEME4 has been developed to offer a complete ready-to-use firmware solution
which allows fast development and rapid time-to-market of smartcard reader applications.
It offers a single IC solution and simplifies the integration of smartcard interfaces into
electronic devices such as computers, POS terminals, mobile phones, PDAs, home routers,
and set-top boxes. Pre-programmed with communication software from our partner
GEMPLUS, the ST7GEME4 is a complete firmware solution controlling the communication
between ISO 7816 1-2-3-4 cards and a host system. An evaluation kit and reference design
with a complete bill of materials and PCB recommendations are available. The ST7GEME4
complies with EMVCo/EMV2000 standards. Software support and engineering expertise in
s )
t(
system integration and PCB design are available as additional services.

u c
3.1 Functionality
o d
P r
The core functionality of ST7GEME4 resides in its pre-programmed software embedded in
ROM memory. GemCoreTM technology manages the communication protocol to/from the

t e
host computer and the external card. Basic features and compliance are described in the
features section and in Table 3 on page 11.
o le
b s
A dedicated analog block provides smartcard power supplies 1.8 V, 3 V, and 5 V necessary
to interface with different card voltages available on the market. Voltages are selected by

O
software. External LEDs can also be directly connected to dedicated I/Os.
-
( s )
A dedicated UART interface provides an ISO 7816 communication port for connection with
the smartcard connector. A full-speed USB interface port allows external connection to a
t
host computer. An optional RS232 connection is also available on dedicated I/Os.
c
d u
3.2
r o
Smartcard interface features
P
The ST7GEME4 firmware includes the following features:
e
let
● Compatibility with asynchronous cards
Compatibility with T=0 and T=1 protocols

so
●
● Compatibility with EMV and PC/SC modes.

Ob
● Compatibility with ISO 7816-3 and 4 and ability to supply the cards with 5V, 3V or 1.8V
(class A, B or C cards, respectively)
● Resume/wake-up mode upon smartcard insertion/removal
Further details on smartcard management can be found in "Gemcore USB Pro reference
manual" from Gemplus.
The reader is able to communicate with smartcards up to the maximum baud rate allowed,
namely 344 086 bps (TA1=16) for a clock frequency of 4 MHz. Because the size of the
smartcard buffer is 261 bytes, care must be taken not to exceed this size during APDU
exchanges when the protocol in use is T=1.

10/28
ST7GEME4 ST7GEME4 implementation

3.3 EMV versus PC/SC-ISO mode

The ST7GEME4 supports two operating modes:
● An EMV mode, based on the EMV4.1 specifications
● A PC/SC-ISO mode which allows to manage of a smartcard according to the PC/SC
and ISO 7816-3 standards
The default mode is PC/SC, however, the reader can switch between EMV and PC/SC-ISO
modes.
GemCore2000 is a utility in charge of managing the switching between the two modes.
When the utility is activated, the reader attempts EMV mode management whenever a
smartcard is inserted. If reading is successful, PC/SC mode will not be available.

s )
t(
Caution: The activation of the GemCore2000 utility must be done before any card command. Any

The EMV mode fails if: u c

activation of the GemCore2000 utility is not recommended unless the reader is reset.

The smartcard has not sent an EMV-compliant answer to reset (ATR)

o d
●
● Negotiation of the buffer size with a T=1 card has failed
P r
Using PC/SC-ISO mode with GemCore2000
t e
o le
The reader switches to PC/SC mode after the application or the driver has sent the

b s
appropriate dedicated command to the reader (with a proprietary Escape command). In this
case, the reader remains in PC/SC mode as long as the card remains in the reader.

- O
Whenever the EMV mode fails, the smartcard is powered off. After the host application has

Card Power On command.

( s )
sent the PC/SC switch (proprietary) Escape command, the application must send a new

c t
When the reader deals with an EMV card, the data exchanged between the reader and the
u
host consists of short APDU messages. When the card is not EMV-compliant and the reader
d
o
is set to PC/SC-ISO mode, the reader exchanges TPDU messages with the host.
r
e P
Restriction: character level and the extended APDU are not implemented in ST7GEME4
solution.

l e t
Table 3. Technical features
o
bs
Features Description Characteristics

O Supported
smartcards
Asynchronous
– Microprocessor cards
– T=0, T=1 protocols
– Transmission rate: 2 Kbps to 344 Kbps
Synchronous – Through a comprehensive API
– 5V/55mA and 3V/50mA and 1.8V/20mA
Smartcard power supply – Short circuit current limitation
Smartcard – Power up/power down control sequences
electrical interface
Smartcard management – Card insertion/extraction detection
ESD protection on card I/O – 4 kV Human Body Model

11/28
 ST7GEME4 implementation ST7GEME4

Table 3. Technical features (continued)

– Microsoft Windows 2000/XP/Server 2003
– Microsoft Windows CE 4.1/4.2/5.0
– Linux Red Hat/SUSE/Debian
USB and serial versions – Microsoft Windows XP 64-bit on AMD64 and
EMT64
Drivers – Microsoft Windows Server 2003 64-bit
– Mac OS 10.3/10.4
– Microsoft Windows 2000/XP/Server 2003
Compliance with class drivers – Microsoft Windows Vista (beta version)
– Mac OS 10.3/10.4
– CCID V1.0
s )
USB interface USB 2.0 compliant – Full speed, hubless
c t(
u
– Bus powered, low consumption

d
Serial host Serial asynchronous link o
– Transmission rate: 9.6 Kbps to 115 Kbps

r
– Format: 8-bit, no parity
interface

e P
– Auto baud rate
Communication protocol
t
– CCID V1.0 on serial TTL link

le
Other features
Temperature range
s o– Operating range: 0 to +70°C
– Storage: -65 to +150°C
Environmental standard
O b – RoHS compliant

) -
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ST7GEME4 Electrical characteristics

4 Electrical characteristics

4.1 Absolute maximum ratings

The ST7GEME4 contains circuitry to protect the inputs against damage due to high static
voltages. However it is advisable to take normal precautions to avoid applying any voltage
higher than the specified maximum rated voltages.
For proper operation it is recommended that VI and VO be higher than VSS and lower than
VDD. Reliability is enhanced if unused inputs are connected to an appropriate logic voltage
level (VDD or VSS).

Power considerations
s )
c
The average chip-junction temperature, TJ, in Celsius can be obtained by the following t(
equation:
d u
T J = T A + PD × RthJA
r o
where:
e P
TA = Ambient temperature
le t
o
RthJA = Package thermal resistance (junction-to ambient)

s
PD = PINT + PPORT
PINT = IDD x VDD (chip internal power)
O b
) -
PPORT = Port power dissipation determined by the user

t ( s
Stresses above those listed as “absolute maximum ratings” may cause permanent damage

u c
to the device. This is a stress rating only and functional operation of the device at these
conditions is not implied. Exposure to maximum rating for extended periods may affect

o
device reliability. d
P r
Table 4. Absolute maximum ratings

e
let
Symbol Ratings Value Unit

so
VDD - VSS Supply voltage 6.0 V
VIN Input voltage VSS - 0.3 to VDD + 0.3 V

Ob
VOUT Output voltage VSS - 0.3 to VDD + 0.3 V
ESD ESD susceptibility 2000 V
ESDCard ESD susceptibility for card pads 4000 V
IVDD_i Total current into VDD_i (source) 250
mA
IVSS_i Total current out of VSS_i (sink) 250

Warning: Direct connection to VDD or VSS of the I/O pins could damage
the device in case of program counter corruption (due to
unwanted change of the I/O configuration). To guarantee safe
conditions, this connection has to be done through a typical
10kΩ pull-up or pull-down resistor.

13/28
Electrical characteristics ST7GEME4

Table 5. Thermal characteristics

Symbol Ratings Value Unit
VFQFPN24 42 °C/W
RthJA Package thermal resistance
SO24 80 °C/W
TJmax Max. junction temperature 150 °C
TSTG Storage temperature range -65 to +150 °C
VFQFPN24 600 mW
PDmax Power dissipation
SO24 500 mW

s )
t(
4.2 Recommended operating conditions
Table 6. General operating conditions
u c
d
ro
Symbol Parameter Conditions Min Typ Max Unit

eP
VDD Supply voltage 4.0 5.5 V
fOSC
TA
External clock source
Ambient temperature range
l e t 0
4
70
MHz
°C

s o
Operating conditions are given for TA = 0 to +70 °C unless otherwise specified.

Table 7.
O b
Current injection on I/O port and control pins(1)
Symbol Parameter

( s )- Conditions Min Typ Max Unit

IINJ+
current(2)(3) c t
Total positive injected
VEXTERNAL>VDD (Standard I/Os)
VEXTERNAL>VCRDVCC (Smartcard 20 mA

d u I/Os)

o
Pr
Total negative injected current VEXTERNAL<VSS Digital pins
IINJ- (4)(5) 20 mA
VEXTERNAL<VSS Analog pins

e t e
1. When several inputs are submitted to a current injection, the maximum injected current is the sum of the
positive (resp. negative) currents (instantaneous values).

ol 2. Positive injection. The IINJ+ is done through protection diodes insulated from the substrate of the die.

bs
3. For SmartCard I/Os, VCRDVCC has to be considered.
4. The negative injected current, IINJ-, passes through protection diodes which are NOT INSULATED from the

O substrate of the die. The drawback is a small leakage (few µA) induced inside the die when a negative
injection is performed. This leakage is tolerated by the digital structure. The effect depends on the pin
which is submitted to the injection. Of course, external digital signals applied to the component must have
a maximum impedance close to 50kΩ.
5. Location of the negative current injection: Pure digital pins can tolerate 1.6mA. In addition, the best choice
is to inject the current as far as possible from the analog input pins.

14/28
 ST7GEME4 Electrical characteristics

Table 8 characteristics are measured at TA=0 to +70oC, and VDD-VSS=5.5V unless

otherwise specified.

Table 8. Current consumption(1)

Symbol Parameter Conditions Min Typ. Max Unit
(2)
Supply current in RUN mode fOSC = 4MHz 10 15 mA
External ILOAD = 0mA
Supply current in suspend mode (USB transceiver 500
IDD enabled)
µA
External ILOAD = 0mA
Supply current in Halt mode (USB transceiver 50 100

s )
t(
disabled)

square wave.
u c
1. All I/O pins are in input mode with a static value at VDD or VSS; clock input (OSCIN) driven by external

d
2. CPU running with memory access, all I/O pins in input mode with a static value at VDD or VSS; clock input

o
(OSCIN) driven by external square wave.

P r
Table 9 characteristics are measured at TA=0 to +70oC. Voltage are referred to VSS unless
otherwise specified.
t e
Table 9. I/O port pins characteristics
o le
Symbol Parameter
b s
Conditions Min Typ Max Unit

-O
VIL Input low level voltage VDD=5V 0.3VDD
V
VIH

( s
Schmidt trigger voltage)
Input high level voltage VDD=5V 0.7VDD

ct
VHYS 400 mV
hysteresis(1)

du
Output low level voltage for I=-5mA 1.3
VOL
o
Standard I/O port pins
r I=-2mA 0.4
V

e
VOH POutput high level voltage I=3mA
VDD-
0.8

e t
ol
IL Input leakage current VSS<VPIN<VDD 1 µA

b s RPU Pull-up equivalent resistor

Output high to low level fall time
50 90 170 kΩ

O tOHL for high sink I/O port pins (Port

D)(2)
6 8 13

Output high to low level fall time

tOHL for standard I/O port pins (Port A, Cl=50pF 18 23 ns
B or C)(2)
tOLH Output L-H rise time (Port D)(2) 7 9 14
Output L-H rise time for standard
tOLH 19 28
I/O port pins (Port A, B or C)(2)
tITEXT External interrupt pulse time 1 tCPU
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
2. Guaranteed by design, not tested in production.

15/28
Electrical characteristics ST7GEME4

Table 10. LED pins characteristics

Symbol Parameter Conditions Min Typ Max Unit

ILsink Low current VPAD > VDD-2.4 2 4

mA
ILsink High current VPAD > VDD-2.4 for ROM 5 6 8.4

4.3 Supply and reset characteristics

Table 11 characteristics are measured at T = 0 to +70 oC, VDD - VSS = 5.5 V unless
otherwise specified.

s )
t(
Table 11. Low voltage detector and supervisor characteristics (LVDS)

uc
Symbol Parameter Conditions Min Typ Max Unit

od
Reset release threshold
VIT+ 3.7 3.9 V

VIT-
(VDD rising)
Reset generation threshold
P r
3.3 3.5 V
(VDD falling)
Hysteresis VIT+ - VIT-(1)
e te
Vhys
1)
o l 200 mV
VtPOR VDD rise time rate

b s 20
1. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
ms/V

- O
4.4 Clock and timing characteristics
(s )
c t
4.4.1 General timings
d u
o
Table 12 characteristics are measured at T = 0 to +70 oC unless otherwise specified.
r
e P
Table 12. General timings

let
Symbol Parameter Conditions Min Typ(1) Max Unit

so
2 3 12 tCPU
tc(INST) Instruction cycle time

Ob
fCPU=4 MHz 500 750 3000 ns

Interrupt reaction time(2) 10 22 tCPU

tv(IT)
tv(IT) = ∆tc(INST) + 10(3) fCPU=4 MHz 2.5 5.5 µs
1. Data based on typical application software.
2. Time measured between interrupt event and interrupt vector fetch. ∆tc(INST) is the number of tCPU cycles
needed to finish the current instruction execution.
3. ∆tINST is the number of tCPU to finish the current instruction execution.

16/28
 ST7GEME4 Electrical characteristics

Table 13. External clock source

Symbol Parameter Conditions Min Typ Max Unit

OSCIN input pin high level

VOSCINH 0.7VDD VDD
voltage V
VOSCINL OSCIN input pin low level voltage VSS 0.3VDD
tw(OSCINH) see Figure 5
OSCIN high or low time(1) 15
tw(OSCINL)
ns
tr(OSCIN)
OSCIN rise or fall time(1) 15
tf(OSCIN)
VSS≤VIN≤VDD µA
IL OSCx Input leakage current ±1

( s )
t
1. Data based on design simulation and/or technology characteristics, not tested in production.

Figure 5. Typical application with an external clock source

u c
90%

o d
VOSCINH
10%
P r
VOSCINL

et e
tr(OSCIN) tf(OSCIN)
o l
tw(OSCINH) tw(OSCINL)

b s
O
OSCOUT

-
( s ) fOSC
EXTERNAL
t
uc
IL
CLOCK SOURCE OSCIN

od
ST7XXX

P r
e t e
o l
b s
O

17/28
 Electrical characteristics ST7GEME4

4.4.2 Crystal resonator oscillators

The ST7 internal clock is supplied with one Crystal resonator oscillator. All the information
given in this paragraph are based on characterization results with specified typical external
components. In the application, the resonator and the load capacitors have to be placed as
close as possible to the oscillator pins in order to minimize output distortion and start-up
stabilization time. Refer to the crystal resonator manufacturer for more details (frequency,
package, accuracy...).

Table 14. Crystal resonator oscillator characteristics

Symbol Parameter Conditions Min Typ Max Unit

fOSC Oscillator Frequency(1) MP: Medium power oscillator 4

s ) MHz
RF Feedback resistor 90

c t(
150 kΩ

CL1
Recommended load
capacitances versus equivalent
See Table 16 (MP oscillator) 22
d u 56 pF
CL2 serial resistance of the crystal
resonator (RS)
r o
i2 OSCOUT driving current VDD=5V, VIN=VSS (MP oscillator)
e P1.5 3.5 mA

e t
1. The oscillator selection can be optimized in terms of supply current using an high quality resonator with small RS value.
Refer to crystal resonator manufacturer for more details.
l
Table 15. Typical crystal resonator characteristics
s o
Oscillator Reference Freq.
O b Characteristic(1)
CL1 CL2 tSU(osc)

) - [pF] [pF] [ms](2)

s
Crystal

∆fOSC=[±30ppm25°C,±30ppm∆Ta],
MP JAUCH
SS3-400-30-
30/30
c t (
4 MHz
Typ. RS=60Ω
33 33 7~10

d u
1. Resonator characteristics given by the crystal resonator manufacturer.

r
VDD ramp-up from 0 to 5 V (<50 µs).o
2. tSU(OSC) is the typical oscillator start-up time measured between VDD=2.8 V and the fetch of the first instruction (with a quick

Table 16.
e P
Recommended values for 4 MHz crystal resonator

e t
ol
Symbol Min Typ Max Unit

RSMAX(1) Ω

b s COSCIN
20
56
25
47
70
22 pF

O COSCOUT 56 47
1. RSMAX is the equivalent serial resistor of the crystal (see crystal specification).
22

18/28
ST7GEME4 Electrical characteristics

Figure 6. Typical application with a crystal resonator

WHEN RESONATOR WITH

INTEGRATED CAPACITORS i2

fOSC
CL1 OSCIN

RESONATOR RF
CL2
OSCOUT
ST7XXX

s )
c t(
4.5 Memory characteristics
d u
r o
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.

Table 17. RAM and hardware registers

e P
Symbol Parameter Conditions
le t Min Typ Max Unit

VRM Data retention mode(1)

so
Halt mode (or Reset)

b
2
1. Minimum VDD supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in
V

O
hardware registers (only in Halt mode). Not tested in production.

-
4.6
( s )
Smartcard supply supervisor electrical characteristics

u ct
Table 18 characteristics are measured at TA = 0 to +70 oC, 4.0 V < VDD - VSS < 5.5 V unless

d
otherwise specified.
o
Table 18.
P r
Smartcard supply supervisor characteristics
Symbol

e t e Parameter Conditions Min Typ Max Unit

o l
5 V regulator output (for IEC 7816-3 Class A Cards)

Obs
VCRDVCC

ISC
SmartCard power supply
voltage
SmartCard supply current
4.6 5.00 5.4

55 mA
V

IOVDET Current overload detection 120(1) mA

Detection time on current
tIDET 170(1) 1400(1) µs
overload
tOFF VCRDVCC turn-off time CLOADmax ≤ 4.7µF 750 µs
tON VCRDVCC turn-on time CLOADmax ≤ 4.7µF 150 500 µs
VCARD above minimum supply
VCRDVCC 4.52(1) 4.76(1) V
voltage
(2)
IVDD VDD supply current 100 mA

19/28
 Electrical characteristics ST7GEME4

Table 18. Smartcard supply supervisor characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

3 V regulator output (for IEC 7816-3 Class B Cards)

SmartCard power supply

VCRDVCC 2.7 3.3 V
voltage
ISC SmartCard supply current 50 mA
(1)
IOVDET Current overload detection 100 mA
Detection time on current
tIDET 170(1) 1400(1) µs
overload
tOFF VCRDVCC turn-off time CLOADmax ≤ 4.7µF 750

( s )
µs

ct
tON VCRDVCC turn-on time CLOADmax ≤ 4.7µF 150 500 µs

1.8V regulator output (for IEC 7816-3 Class C Cards)

d u
o
Pr
SmartCard power supply
VCRDVCC 1.65 1.95 V
voltage
ISC SmartCard supply current

e t e 20 mA

ol
IOVDET Current overload detection 100(1) mA

bs
Detection time on current
tIDET 170(1) 1400(1) µs
overload

-O
tOFF VCRDVCC turn-off time CLOADmax ≤ 4.7µF 750 µs

(s)
tON VCRDVCC turn-on time CLOADmax ≤ 4.7µF 150 500 µs

Smartcard CLKPin

c t
VOL Output low level voltage
u I = -50 µA - - 0.4(3) V
VOH

r od
Output high level voltage
Output high to low fall time(1)
I = 50 µA VCRDVCC -0.5(3) - - V
TOHL
TOLH
e P
Output low to high rise time (1)
Cl = 30 pF
Cl = 30 pF
-
-
20
20
ns
ns
FVAR
l e t
Frequency variation(1) - 1 %

s
FDUTY o Duty cycle(1) 45 55 %

O b POL Signal low perturbation(1) -0.25 0.4

VCRDVCC
V

POH Signal high perturbation(1) VCRDVCC-0.5 V

+0.25
ISGND Short-circuit to ground(1) 15 mA

Smartcard I/O Pin

VIL Input low level voltage - - 0.5(3) V

VIH Input high level voltage 0.6VCRDVCC(3) - - V
VOL Output low Level Voltage I = -0.5 mA - - 0.4(3) V
(3)
VOH Output high level voltage I = 20 µA 0.8VCRDVCC - VCRDVCC(3) V
IL Input leakage current(1) VSS<VIN<VSC_PWR -10 - 10 µA
IRPU Pull-up equivalent resistance VIN=VSS 24 30 kΩ

20/28
 ST7GEME4 Electrical characteristics

Table 18. Smartcard supply supervisor characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

TOHL Output high to low fall time (1)

Cl = 30 pF - 0.8 µs
TOLH Output low to high rise time(1) Cl = 30 pF - 0.8 µs
(1)
ISGND Short-circuit to ground 15 mA

Smartcard RST C4 and C8 Pin

VOL Output low Level Voltage I = -0.5 mA - - 0.4 (3) V

VOH Output high level voltage I = 20 µA VCRDVCC-0.5(3) - VCRDVCC(3) V
TOHL Output high to low fall time (1)
Cl = 30 pF - 0.8

( s )
µs

ct
TOLH Output low to high rise time(1) Cl = 30 pF - 0.8 µs
ground(1)
ISGND Short-circuit to 15

d u mA

o
1. Guaranteed by design.

and CPU in WFI mode.

P r
2. VDD = 4.75 V, Card consumption = 55mA, CRDCLK frequency = 4MHz, LED with a 3mA current, USB in reception mode

3. Data based on characterization results, not tested in production.

e t e
4.7 EMC characteristics o l
b s
Susceptibility tests are performed on a sample basis during product characterization.

- O
4.7.1
)
Functional EMS (electromagnetic susceptibility)
(s
t
Based on a simple running application on the product (toggling 2 LEDs through I/O ports),
c
LEDs).
d u
the product is stressed by two electromagnetic events until a failure occurs (indicated by the

●
r o
ESD: electrostatic discharge (positive and negative) is applied on all pins of the device

e P
until a functional disturbance occurs. This test conforms with the IEC 1000-4-2
standard.

l e t
● FTB: a burst of fast transient voltage (positive and negative) is applied to VDD and VSS
through a 100 pF capacitor, until a functional disturbance occurs. This test conforms

s o with the IEC 1000-4-4 standard.

O b A device reset allows normal operations to be resumed. The test results are given in the
table below based on the EMS levels and classes defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical
application environment and simplified MCU software. It should be noted that good EMC
performance is highly dependent on the user application and the software in particular.
Therefore it is recommended that the user applies EMC software optimization and
prequalification tests in relation with the EMC level requested for his application.

21/28
 Electrical characteristics ST7GEME4

Software recommendations
The software flowchart must include the management of runaway conditions such as:
● Corrupted program counter
● Unexpected reset
● Critical Data corruption (control registers...)

Prequalification trials
Most of the common failures (unexpected reset and program counter corruption) can be
reproduced by manually forcing a low state on the RESET pin or the Oscillator pins for 1
second.
To complete these trials, ESD stress can be applied directly on the device, over the range of
s )
specification values. When unexpected behavior is detected, the software can be hardened
to prevent unrecoverable errors occurring (see application note AN1015).
c t(
d u
Table 19. EMS characteristics
r o
Symbol Parameter

e P
Conditions
Level/
Class

VFESD
le t
Voltage limits to be applied on any I/O pin to VDD=5 V, TA=+25 °C, fOSC=8 MHz
2B
induce a functional disturbance

s o conforms to IEC 1000-4-2

VFFTB
Fast transient voltage burst limits to be
b
applied through 100 pF on VDD and VDD pins
O
to induce a functional disturbance
VDD=5 V, TA=+25 °C, fOSC=8 MHz
conforms to IEC 1000-4-4
4B

) -
4.7.2
(
Electromagnetic interference (EMI)
t s
u c
Based on a simple application running on the product (toggling 2 LEDs through the I/O

o d
ports), the product is monitored in terms of emission. This emission test is in line with the
norm SAE J 1752/3 which specifies the board and the loading of each pin.

P
Table 20.
r EMI characteristics

e t e Max vs.

o l Symbol Parameter Conditions

Monitored [fOSC/fCPU](1)
Unit

b s frequency band
4/8 MHz 4/4 MHz

O 0.1 MHz to
30 MHz
19 18

30 MHz to dBµ
VDD=5 V, TA=+25 °C, 32 27
SEMI Peak level 130 MHz V
conforming to SAE J 1752/3
130 MHz to
31 26
1 GHz
SAE EMI Level 4 3.5 -
1. Data based on characterization results, not tested in production.

22/28
ST7GEME4 Electrical characteristics

4.7.3 Absolute maximum ratings (electrical sensitivity)

Based on three different tests (ESD, LU and DLU) using specific measurement methods, the
product is stressed in order to determine its performance in terms of electrical sensitivity.
For more details, refer to the application note AN1181.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts*(n+1) supply pin). The Human
Body Model is simulated. This test conforms to the JESD22-A114A standard.

Table 21. Absolute maximum ratings

s )
Maximum
t(
uc
Symbol Ratings Conditions Unit
value(1)

Electrostatic discharge voltage

TA=+25 °C
o d
VESD(HBM)
(Human Body Model)
1. Data based on characterization results, not tested in production. P r 2000 V

Static and dynamic latch-up

et e
●
o l
LU: 3 complementary static tests are required on 10 parts to assess the latch-up

b s
performance. A supply overvoltage (applied to each power supply pin) and a current
injection (applied to each input, output and configurable I/O pin) are performed on each
O
sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details,
-
●
( )
refer to the application note AN1181.

s
DLU: Electrostatic discharges (one positive then one negative test) are applied to each

u ct
pin of 3 samples when the micro is running to assess the latch-up performance in
dynamic mode. Power supplies are set to the typical values, the oscillator is connected

d
as near as possible to the pins of the micro and the component is put in reset mode.
o
P r
This test conforms to the IEC1000-4-2 and SAEJ1752/3 standards. For more details,
refer to the application note AN1181.

e
let
Table 22. Electrical sensitivities

s o Symbol Parameter Conditions Class(1)

Ob LU

DLU
Static latch-up class

Dynamic latch-up class

TA=+25 °C
VDD=5.5 V, fOSC=4 MHz,
A

A
TA=+25 °C
1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the
JEDEC specifications, that means when a device belongs to Class A it exceeds the JEDEC standard. B
Class strictly covers all the JEDEC criteria (international standard).

23/28
 Electrical characteristics ST7GEME4

4.8 Communication interface characteristics

Table 23. USB DC electrical characteristics(1)
Parameter Symbol Conditions Min. Max. Unit

Input Levels
Differential input sensitivity VDI I(D+, D-) 0.2 V
Differential common mode
VCM Includes VDI range 0.8 2.5 V
range
Single ended receiver
VSE 1.3 2.0 V
threshold

s )
t(
Output levels

uc
Static output low VOL RL of 1.5 kΩ to 3.6 V 0.3 V

od
Static Output high VOH RL of 15 kΩ to VSS 2.8 3.6 V

Pr
USBVCC: voltage level USBV VDD=5 V 3.00 3.60 V
1. RL is the load connected on the USB drivers. All the voltages are measured from the local ground
potential.
t e
Figure 7. USB data signal rise and fall time
o le
b s
Differential
Data Lines
- O
Crossover

)
points
VCRS

t ( s
u c
VSS

o d
Pr
tf tr

e t e
Table 24. USB full speed electrical characteristics

s ol Parameter Symbol Conditions Min Max Unit

O b Driver characteristics:
Rise time tr CL = 50 pF(1) 4 20 ns
Fall time tf (1)
CL = 50 pF 4 20 ns
Rise/ fall time
trfm tr/tf 90 110 %
matching
Output signal
VCRS 1.3 2.0 V
crossover Voltage
1. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to Chapter 7
(Electrical) of the USB specification (version 1.1).

24/28
ST7GEME4 Package characteristics

5 Package characteristics

5.1 Package mechanical data

Figure 8. 24-lead very thin fine pitch quad flat no-lead 5x5 mm 0.65 mm pitch, package outline

D
C

e
19 24

1
18

)
e
t( s
E
E2

c
b

13 6

d u
o
L

r
12 7
A1

P
b L
A

D2

t e
o le
Table 25.
b s
24-lead very thin fine pitch quad flat no-lead 5x5mm,0.65mm pitch, mechanical data

-O
mm inches(1)
Dim.

(s)
Min Typ Max Min Typ Max

A 0.80
c t 0.90 1.00 0.031 0.035 0.039

u
od
A1 0.02 0.05 0.001 0.002

Pr
b 0.25 0.30 0.35 0.010 0.012 0.014

ete
D 5.00 0.197

o l
D2 3.50 3.60 3.70 0.138 0.142 0.146

s
Ob
E 5.00 0.197

E2 3.50 3.60 3.70 0.138 0.142 0.146

e 0.65 0.026

L 0.35 0.45 0.55 0.014 0.018 0.022

ddd 0.08 0.003

Number of pins

N 24

1. Values in inches are converted from mm and rounded to 3 decimal digits.

25/28
Package characteristics ST7GEME4

Figure 9. 24-pin plastic small outline package- 300-mil width, package outline

D
12 1 h x 45˚

C
E H

13 28

B e A1
ddd
A1 α L
s )
9U_ME

ct(
Table 26. 24-pin plastic small outline package- 300-mil width, mechanical data
d u
mm
r o
inches
Dim.
Min Typ Max Min
e P Typ Max

e t
ol
A 2.35 2.65 0.093 0.104

bs
A1 0.10 0.30 0.004 0.012

-O
B 0.33 0.51 0.013 0.020

(s)
C 0.23 0.32 0.009 0.020

D 15.20
c t 15.60 0.599 0.619

u
od
E 7.40 7.60 0.291 0.299

Pr
e 1.27 0.050

e t e 10.00 10.65 0.394 0.419

ol
h 0.25 0.75 0.010 0.030

bs
α 0° 8° 0° 8°

O L

ddd
0.40 1.27

0.10
0.016 0.050

0.004

Number of pins

N 24

26/28
 ST7GEME4 Revision history

6 Revision history

Table 27. Document revision history

Date Revision Changes

01-Aug-06 0.1 Initial release

10-May-2007 1 Root part number changed from ST7GEM to ST7GEME4.
Document reformatted.
Modified Figure 1 title.
USB host interface replaced by USB interface in Section 1:
Introduction and Table 3: Technical features.
s )
21-Sep-2007 2 t(
Updated Figure 9: 24-pin plastic small outline package- 300-mil

c
width, package outline. ddd tolerance and maximum values in inched
u
added in Table 26: 24-pin plastic small outline package- 300-mil
d
width, mechanical data.

r o
QFN24 package renamed VFQFPN24. Figure 8: 24-lead very thin
P
fine pitch quad flat no-lead 5x5 mm 0.65 mm pitch, package outline

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updated to remove A2 and A3 dimensions.

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