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The document outlines the construction and operation of an inverter, which converts DC power to AC power, detailing various classifications based on output characteristics, source, load type, PWM techniques, and connection methods. It also explains the function of MOSFETs in the inverter circuit, including their operation and types, and describes the IC 3525 as a PWM controller used in the project. The project results in a square wave output and suggests future developments for improving the inverter's performance and functionality.

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Arup Paul
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3 views6 pages

project

The document outlines the construction and operation of an inverter, which converts DC power to AC power, detailing various classifications based on output characteristics, source, load type, PWM techniques, and connection methods. It also explains the function of MOSFETs in the inverter circuit, including their operation and types, and describes the IC 3525 as a PWM controller used in the project. The project results in a square wave output and suggests future developments for improving the inverter's performance and functionality.

Uploaded by

Arup Paul
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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JNAN CHANDRA GHOSH POLYTECHNIC

INDUSTRIAL PROJECT LAB


TOPIC- MAKING OF AN INVERTER
Group:
NAME:
ROLL: DJCGEES6 No:
Reg. no.:
INVERTER
It is a device that converts DC power into AC power at desired output voltage and
frequency.
 Classification of Inverters:

Inverter can be classified into many types based on their output, source, type of
load etc.

(I) According to the Output Characteristic

1. Square Wave Inverter


2. Sine Wave Inverter
3. Modified Sine Wave Inverter

(II) According to the Source of Inverter

1. Current Source Inverter (CSI)


2. Voltage Source Inverter (VSI)

(III) According to the Type of Load

1. Single Phase Inverter


a) Half Bridge Inverter b) Full Bridge Inverter

1. Three Phase Inverter


a) 180-degree mode Inverter b) 120-degree mode Inverter

IV) According to different PWM Technique

1. Single Pulse Width Modulation (SPWM)


2. Multiple Pulse Width Modulation (MPWM)
3. Sinusoidal Pulse Width Modulation (SPWM)
4. Modified sinusoidal Pulse Width Modulation (MSPWM)

(V) According to the connection

1. Series Inverter
2. Parallel Inverter
MOSFET
WHAT IS MOSFET?
A metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a
field-effect transistor (FET with an insulated gate) where the voltage determines the conductivity of
the device. It is used for switching or amplifying signals. The ability to change conductivity with the
amount of applied voltage can be used for amplifying or switching electronic signals. MOSFETs are
now even more common than BJTs (bipolar junction transistors) in digital and analog circuits.
MOSFET OPERATION
The working of a MOSFET depends upon the MOS
capacitor. The MOS capacitor is the main part of MOSFET.
The semiconductor surface at the below oxide layer is
located between the source and drain terminals. It can be
inverted from p-type to n-type by applying positive or
negative gate voltages.
When we apply positive gate voltage the holes
present under the oxide layer with a repulsive force and holes are pushed downward with the
substrate. The depletion region is populated by the bound negative charges which are associated
with the acceptor atoms. The electrons reach the channel is formed. The positive voltage also
attracts electrons from the n+ source and drain regions into the channel. Now, if a voltage is applied
between the drain and source, the current flows freely between the source and drain and the gate
voltage controls the electrons in the channel. If we apply negative voltage, a hole channel will be
formed under the oxide layer.
MOSFET TYPES:
P- Channel MOSFET
The P-Channel MOSFET consist negative ions so it works
with negative voltages. When we apply the negative voltage
to gate, the electrons present under the oxide layer through
pushed downward into the substrate with a repulsive force.
The deflection region populates by the bound positive
charges which are allied with the donor atoms. The negative
voltage also attracts holes from p+ source and drain region
into the channel region.
N- Channel MOSFET
When we apply the positive gate voltage the holes present
under the oxide layer pushed downward into the substrate
with a repulsive force. The deflection region is populated by
the bound negative charges which are allied with the acceptor
atoms. The positive voltage also attracts electrons from the
n+ source and drain regions into the channel. Now, if a voltage
is applied among the drain and source the current flows freely
between the source and drain and the gate voltage controls
the electrons in the channel. In place of positive voltage if we
apply a negative voltage (hole) channel will be formed under
the oxide layer.
IC 3525
 It is a pulse width modulation controller IC which has 16 pins.
 It provides two pulse width modulator signal which is
a complement of each other.
 It is used to generate a PWM signal for power
electronics projects and also for switch-mode power
supplies.
 It offers feedback circuitry to control the output
voltage by comparing the feedback signal with a
reference voltage.
 It has a protection circuitry that shutdown the PWM
signal based on the feedback current limit.
Features of SG3525:
 It can operate with a supply voltage of between 8 and
35 volts. It may damage above 40 volts.
 It also has an external oscillator synchronization pin.
 It has a pulse-to-pulse shutdown capability.
 It can operate with a frequency range of 100 to 400KHz.
 It also provides a feature of versatile dead-time control between switching signals to turn
on or off devices like MOSFETs, IGBTS and power transistors.
 The maximum power dissipation is about 1000mW.
 Other similar integrated circuits are SG2525, UC3525.
 For further features and specifications check datasheet.
USED MATERIALS:
 IC 3525
 IC BASE
 IRFZ44Z MOSFET
 Pot 20k
 Capacitor- 1000uf,22uf,1uf(50v),
mica capacitor code 104,105
 Resistance – 5, 10,22,47,10k,12k
ohm
 Heat shrinks
 Vero board
PROCEDURE:
We made the circuit as the circuit
diagram by using above materials.
RESULTS:
After connecting inverter control circuit, we get square wave on CRO
between 11th and 14th pin of IC 3525.
Then we connect the whole inverter circuit with transformer, which we
made on previous semester project
Rating of the Inverter - 150 VA

FUTURE DEVOLOPMENT:
 Stabilizing output by using feedback circuit.
 Installing battery charging system.
 Developing sinusoidal wave by using Arduino instead of SPM signal
 Making the whole operation automatic

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