STP105N3LL

N-channel 30 V, 2.7 mΩ typ., 150 A, STripFET™ H6

Power MOSFET in a TO-220 package
Datasheet − production data

Features
Order code VDS RDS(on) max. ID
TAB
STP105N3LL 30 V 3.5 mΩ 150 A

• Very low on-resistance

• Very low gate charge
3
• High avalanche ruggedness
2
1

TO-220 • Low gate drive power loss

Applications
• Switching applications
Figure 1. Internal schematic diagram
Description
' 7$% This device is an N-channel Power MOSFET
developed using the STripFET™ H6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
*

6

$0Y

Table 1. Device summary

Order code Marking Packages Packaging

STP105N3LL P105N3LL TO-220 Tube

July 2015 DocID023976 Rev 3 1/13

This is information on a product in full production. www.st.com
Contents STP105N3LL

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6

3 Test circuits .............................................. 8

4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12

2/13 DocID023976 Rev 3

STP105N3LL Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings

Symbol Parameter Value Unit

VDS Drain-source voltage 30 V

VGS Gate-source voltage ± 20 V
Continuous drain current at TC = 25 °C
ID 150 A
(silicon limited)
Continuous drain current at TC = 100 °C
ID 105 A
(silicon limited)
Continuous drain current at TC = 25 °C
ID 80 A
(package limited)
IDM (1) Pulsed drain current 320 A
PTOT Total dissipation at TC = 25 °C 140 W
Derating factor 0.9 W/°C
EAS (2)
Single pulse avalanche energy 150 mJ
Tstg Storage temperature -55 to 175 °C
Tj Max. operating junction temperature 175 °C
1. Pulse width limited by safe operating area
2. Starting Tj = 25°C, IAV = 40 A

Table 3. Thermal data

Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.1 °C/W

Rthj-amb Thermal resistance junction-ambient max 62.5 °C/W

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13
Electrical characteristics STP105N3LL

2 Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit

Drain-source breakdown
V(BR)DSS ID = 250 µA, VGS= 0 30 V
Voltage

Zero gate voltage drain VDS = 30 V 1 µA

IDSS
current (VGS = 0) VDS = 30 V, Tc = 125 °C 10 µA
Gate body leakage current
IGSS VGS = ± 20 V ±100 nA
(VDS = 0)
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1 2.5 V

Static drain-source on- VGS = 10 V, ID = 40 A 2.7 3.5 mΩ

RDS(on)
resistance VGS = 4.5 V, ID = 40 A 3.5 4.5 mΩ

Table 5. Dynamic
Symbol Parameter Test conditions Min Typ. Max. Unit

Ciss Input capacitance - 3500 - pF

Coss Output capacitance VDS = 25 V, f=1 MHz, - 400 - pF
VGS = 0
Reverse transfer
Crss - 380 - pF
capacitance
Qg Total gate charge VDD = 15 V, ID = 80 A - 42 - nC
Qgs Gate-source charge VGS = 4.5 V - 9 - nC
Qgd Gate-drain charge Figure 14 - 18 - nC
f = 1 MHz, gate DC
Bias = 0,
Rg Gate input resistance - 1 - Ω
test signal level = 20 mV,
ID = 0

Table 6. Switching on/off (inductive load)

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time - 19 - ns

tr Rise time VDD = 15 V, ID = 40 A, - 91 - ns
RG = 4.7 Ω, VGS = 5 V
td(off) Turn-off delay time - 24.5 - ns
Figure 13
tf Fall time - 23.4 - ns

4/13 DocID023976 Rev 3

STP105N3LL Electrical characteristics

Table 7. Source drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 80 A

ISDM (1)
Source-drain current (pulsed) - 320 A
VSD(2) Forward on voltage ISD = 40 A, VGS = 0 - 1.1 V
trr Reverse recovery time ISD = 80 A, - 28.6 ns
Qrr Reverse recovery charge di/dt = 100 A/µs, - 22.8 nC
VDD = 24 V
IRRM Reverse recovery current Figure 15 - 1.6 A

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%

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13
Electrical characteristics STP105N3LL

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Thermal impedance
AM18155v1 AM18156v1
ID K
(A) is
δ=0.5
rea
s a S(on)
thi D
n in x R
tio a
100 era by
m
Op ited
Lim
0.2
100µs 0.1
10
1ms 10 -1 0.05
10ms 0.02
1 c
1s
0.01
Single pulse
0.1
Tj=175°C
Tc=25°C
Single pulse
0.01 10 -2
0.1 1 10 VDS(V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 tp(s)

Figure 4. Output characteristics Figure 5. Transfer characteristics

AM18157v1 AM18158v1
ID
ID (A) (A)
3V VGS= 4, 5, 6, 7, 8, 9, 10V
VDS=1V
300 300
2V

250 250

200 200

150 150

100 100

50 50
1V
0 0
0 1 2 3 4 VDS(V) 0 1 2 3 4 VGS(V)

Figure 6. Gate charge vs gate-source voltage Figure 7. Static drain-source on-resistance

AM18159v1 AM18160v1
VGS RDS(on)
(V) (mΩ)
VDD=15V VGS=10V
10 ID=80A 2.90

8 2.80

6 2.70

4 2.60

2 2.50

0 2.40
0 20 40 60 80 Qg(nC) 0 20 40 60 80 ID(A)

6/13 DocID023976 Rev 3

STP105N3LL Electrical characteristics

Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs

temperature
AM18161v1 VGS(th) AM18162v1
C
(pF) (norm)

1.2 ID=250µA
5000

1
4000
Ciss 0.8
3000
0.6
2000
0.4

1000 0.2
Coss
Crss
0 0
0 10 20 VDS(V) -55 -5 45 95 120 TJ(°C)

Figure 10. Normalized on-resistance vs Figure 11. Normalized V(BR)DSS vs temperature

temperature
AM18163v1 AM18164v1
RDS(on) V(BR)DSS
(norm) (norm)
ID=40A 1.08 ID=1mA
VGS=10V
2 1.06

1.04
1.5
1.02

1
1
0.98

0.5 0.96
0.94
0 0.92
-55 -5 45 95 120 TJ(°C) -55 -5 45 95 145 TJ(°C)

Figure 12. Source-drain diode forward

characteristics
AM18165v1
VSD (V)

1 TJ=-55°C

0.9
TJ=25°C
0.8

0.7
TJ=175°C
0.6

0.5

0.4
0 10 20 30 40 50 60 70 ISD(A)

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13
Test circuits STP105N3LL

3 Test circuits

Figure 13. Switching times test circuit for Figure 14. Gate charge test circuit
resistive load
VDD

12V 47kΩ
1kΩ
100nF
RL 2200 3.3
μF μF
VDD IG=CONST
VD Vi=20V=VGMAX 100Ω D.U.T.
VGS 2200
RG D.U.T. μF 2.7kΩ VG

PW
47kΩ

PW 1kΩ
AM01468v1 AM01469v1

Figure 15. Test circuit for inductive load Figure 16. Unclamped inductive load test circuit
switching and diode recovery times

L
A A A
D
FAST L=100μH VD
G D.U.T. DIODE 2200 3.3
μF μF VDD
S B 3.3 1000
B B μF μF
25 Ω VDD ID
D

RG S
Vi D.U.T.

Pw
AM01470v1 AM01471v1

Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
V(BR)DSS ton toff
tr tdoff tf
VD tdon

90% 90%
IDM
10%
ID 10% VDS
0

VDD VDD 90%

VGS

AM01472v1 0 10% AM01473v1

8/13 DocID023976 Rev 3

STP105N3LL Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

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Package information STP105N3LL

Figure 19. TO-220 type A package outline

BW\SH$B5HYB7

10/13 DocID023976 Rev 3

STP105N3LL Package information

Table 8. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

DocID023976 Rev 3 11/13

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Revision history STP105N3LL

5 Revision history

Table 9. Document revision history

Date Revision Changes

13-Dec-2012 1 First release.

– Added: Section 2.1: Electrical characteristics (curves)
03-Apr-2014 2
– Minor text changes
– Updated Table 1: Device summary.
06-Jul-2015 3 – Updated title, features and description in cover page.
– Minor text changes.

12/13 DocID023976 Rev 3

STP105N3LL

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