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1.10 Transition and Diffusion Capacitance

The document discusses transition and diffusion capacitance in p-n junctions, explaining how transition capacitance decreases with increased reverse voltage due to widening depletion regions, while diffusion capacitance is related to the charge storage and carrier lifetime in forward-biased conditions. It provides numerical examples for both types of capacitance, illustrating their calculations and applications in devices like varactor diodes and rectifiers. Additionally, it compares the dominant capacitance scenarios in reverse-biased and forward-biased diodes, highlighting their relevance in high-frequency RF circuits and switching applications.

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SH Shihab
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93 views3 pages

1.10 Transition and Diffusion Capacitance

The document discusses transition and diffusion capacitance in p-n junctions, explaining how transition capacitance decreases with increased reverse voltage due to widening depletion regions, while diffusion capacitance is related to the charge storage and carrier lifetime in forward-biased conditions. It provides numerical examples for both types of capacitance, illustrating their calculations and applications in devices like varactor diodes and rectifiers. Additionally, it compares the dominant capacitance scenarios in reverse-biased and forward-biased diodes, highlighting their relevance in high-frequency RF circuits and switching applications.

Uploaded by

SH Shihab
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as DOCX, PDF, TXT or read online on Scribd
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1.

10 Transition and diffusion capacitance:

1. Transition Capacitance (Junction Capacitance)


 In a p-n junction, a depletion region forms where the electrons and holes
recombine, leaving behind immobile ions. This region is devoid of free
charge carriers and behaves like an insulator.
 When a reverse bias is applied, the depletion region widens, increasing the
"distance" between the effective charge layers (the n-side and p-side
ions). This mimics a parallel-plate capacitor.
 The capacitance of this junction decreases as the reverse voltage
increases because the depletion width WW increases, reducing the
capacitance (CT=ϵAWC_T = \frac{\epsilon A}{W}).
Physical Analogy:
Think of transition capacitance like the plates of a capacitor being moved apart.
As the plates (n-side and p-side) get farther apart (wider depletion region), the
capacitance decreases.
Example Application:
 Varactor Diode (Voltage-Controlled Capacitor):
o A varactor diode utilizes transition capacitance.

o By changing the reverse voltage across the diode, the capacitance


is altered, enabling its use in tunable RF circuits like oscillators and
filters.
Numerical Example:
 Consider a p-n junction with:
o Permittivity ϵ=10−12 F/m\epsilon = 10^{-12} \, \text{F/m},

o Junction area A=1 mm2=10−6 m2A = 1 \, \text{mm}^2 = 10^{-6}


\, \text{m}^2,
o Depletion width W=1 μm=10−6 mW = 1 \, \mu\text{m} = 10^{-
6} \, \text{m}.
Using CT=ϵAWC_T = \frac{\epsilon A}{W}:
CT=10−12×10−610−6=10−12 F=1 pF.C_T = \frac{10^{-12} \times 10^{-6}}
{10^{-6}} = 10^{-12} \, \text{F} = 1 \, \text{pF}.
If the reverse voltage is increased and WW doubles to 2 μm2 \, \mu\text{m}:
CT=10−12×10−62×10−6=0.5 pF.C_T = \frac{10^{-12} \times 10^{-6}}{2 \
times 10^{-6}} = 0.5 \, \text{pF}.
This shows how capacitance decreases with increasing reverse bias.
2. Diffusion Capacitance
Deeper Explanation:
 In a forward-biased p-n junction, charge carriers (electrons and holes) are
injected into the opposite regions (electrons into the p-region and holes
into the n-region).
 These carriers form a "charge storage" layer near the junction. Since the
flow of carriers depends on recombination and transit time, this creates a
time-dependent charge, which leads to diffusion capacitance.
 Diffusion capacitance is proportional to the current through the junction
and carrier lifetime τ\tau.
Physical Analogy:
Imagine filling a bucket with water at a constant rate. The bucket has a delay in
reaching full capacity due to its size (carrier lifetime). This delay represents the
diffusion capacitance.
Example Application:
 Forward-Biased Diode in Rectifiers:
o During switching, the stored charge in the junction affects the speed
of turning off the diode. This stored charge is quantified by the
diffusion capacitance.
Numerical Example:
 For a diode with:
o Current I=10 mA=0.01 AI = 10 \, \text{mA} = 0.01 \, \text{A},

o Voltage V=0.7 VV = 0.7 \, \text{V},

o Carrier lifetime τ=1 μs=10−6 s\tau = 1 \, \mu\text{s} = 10^{-


6} \, \text{s}.
The diffusion capacitance is:

CD=τ⋅dIdV.C_D = \tau \cdot \frac{dI}{dV}.


Assuming dIdV=IV=0.010.7=0.0143 S\frac{dI}{dV} = \frac{I}{V} = \frac{0.01}
{0.7} = 0.0143 \, \text{S}:
CD=10−6×0.0143=14.3 pF.C_D = 10^{-6} \times 0.0143 = 14.3 \, \text{pF}.
This shows how the diffusion capacitance depends on the current and carrier
lifetime.

Comparison in Applications:
Dominant
Scenario Explanation
Capacitance

Reverse-Biased Transition Depletion region dominates as there


Diode Capacitance is no injection.

Forward-Biased Diffusion Minority carrier charge storage


Diode Capacitance dominates.

High-Frequency RF Transition
Used in varactors for tuning circuits.
Circuits Capacitance

Switching Diffusion Determines the turn-off time due to


Applications Capacitance stored charge.

Let me know if you'd like more detailed calculations, physical insights, or circuit
examples!

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