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3N150

The document provides a datasheet for N-channel 1500 V, 2.5 A PowerMESH Power MOSFETs available in various packages. It includes key features, electrical ratings, characteristics, and test circuits for the devices. The MOSFETs are designed for high-speed switching applications and are fully avalanche tested.

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Anocha Ketpradit
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0% found this document useful (0 votes)
86 views22 pages

3N150

The document provides a datasheet for N-channel 1500 V, 2.5 A PowerMESH Power MOSFETs available in various packages. It includes key features, electrical ratings, characteristics, and test circuits for the devices. The MOSFETs are designed for high-speed switching applications and are fully avalanche tested.

Uploaded by

Anocha Ketpradit
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 22

STFW3N150, STH3N150-2

STP3N150, STW3N150
Datasheet

N-channel 1500 V, 2.5 A, 6 Ω typ., PowerMESH Power MOSFETs


in TO-3PF, H2PAK-2, TO-220 and TO247 packages

Features
TAB

Order codes VDS RDS(on) max. ID PTOT


2
3
1
3
2 STFW3N150 63 W
1
2
H PAK-2
TO-3PF STH3N150-2
1500 V 9Ω 2.5 A
TAB
STP3N150 140 W
STW3N150

2
3
2
3 • 100% avalanche tested
1
1
TO-220 TO-247 • Intrinsic capacitances and Qg minimized
• High speed switching
• Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ.)
D(2, TAB) D(TAB)

Applications
G(1) G(1) • Switching applications

S(3) S(2, 3)
Description
(TO-3PF, TO-220 and TO-247)
2
(H PAK-2) These Power MOSFETs are designed using the STMicroelectronics consolidated
strip-layout-based MESH OVERLAY process. The result is a product that matches or
AM15557v1
improves on the performance of comparable standard parts from other
manufacturers.

Product status link

STFW3N150
STH3N150-2
STP3N150
STW3N150

DS5052 - Rev 12 - May 2020 www.st.com


For further information contact your local STMicroelectronics sales office.
STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical ratings

1 Electrical ratings

Table 1.

Value
Symbol Parameter Unit
TO-3PF H2PAK-2 TO-220 TO-247

VDS Drain-source voltage 1500 V

VGS Gate-source voltage ±30 V

Drain current (continuous) at TC = 25 °C 2.5(1) 2.5


ID A
Drain current (continuous) at TC = 100 °C 1.6(1) 1.6

IDM(2) Drain current (pulsed) 10 A

PTOT Total power dissipation at TC = 25 °C 63 140 W

Insulation withstand voltage (RMS) from all three leads to


VISO 3.5 kV
external heat sink (t = 1 s; TC = 25 °C)

Derating factor 0.5 1.12 W/°C


Tstg Storage temperature range
-55 to 150 °C
TJ Operating junction temperature range

1. Limited by maximum junction temperature.


2. Pulse width limited by safe operating area.

Table 2. Thermal data

Value
Symbol Parameter Unit
TO-3PF H2PAK-2 TO-220 TO-247

Rthj-case Thermal resistance junction-case 2 0.89 °C/W

Rthj-amb Thermal resistance junction-ambient 50 62.5 50 °C/W

Rthj-pcb(1) Thermal resistance junction-pcb 35 °C/W

1. When mounted on 1 inch2 FR-4 board, 2 oz Cu.

Table 3.

Symbol Parameter Max value Unit

Avalanche current, repetitive or not-repetitive


IAR 2.5 A
(pulse width limited by TJ max)

Single pulse avalanche energy


EAS 450 mJ
(starting TJ = 25 °C, ID = IAR, VDD = 50 V)

DS5052 - Rev 12 page 2/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics

2 Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. Static

Symbol Parameter Test conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source breakdown voltage VGS = 0 V, ID = 1 mA 1500 V

VGS = 0 V, VDS = 1500 V 10


IDSS Zero gate voltage drain current µA
VGS = 0 V, VDS = 1500 V, TC = 125 °C (1)
500

IGSS Gate-body leakage current VDS = 0 V, VGS = ±30 V ±100 nA

VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V

RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 1.3 A 6 9 Ω

1. Defined by design, not subject to production test.

Table 5. Dynamic

Symbol Parameter Test conditions Min. Typ. Max. Unit

Ciss Input capacitance - 939 -

Coss Output capacitance VDS = 25 V, f = 1 MHz, VGS = 0 V - 102 - pF

Crss Reverse transfer capacitance - 13.2 -

Coss eq. (1) VDS = 0 to 1200 V, VGS = 0 V


Equivalent output capacitance - 100 - pF

f = 1 MHz, gate DC Bias = 0,


Rg Gate input resistance - 4 - Ω
test signal level = 20 mV, ID = 0 A

Qg Total gate charge - 29.3 -


VDD = 1200 V, ID = 2.5 A, VGS = 0 to 10 V
Qgs Gate-source charge (see Figure 18. Test circuit for gate - 4.6 - nC

Qgd charge behavior)


Gate-drain charge - 17 -

1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0
to 80% VDSS.

Table 6. Switching times

Symbol Parameter Test conditions Min. Typ. Max. Unit

td(on) Turn-on delay time VDD = 750 V, ID = 1.25 A, - 24 -

tr Rise time RG = 4.7 Ω, VGS = 10 V - 47 -


ns
td(off) Turn-off delay time (see Figure 17. Test circuit for resistive - 45 -
load switching times and
tf Fall time Figure 22. Switching time waveform) - 61 -

DS5052 - Rev 12 page 3/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics

Table 7. Source-drain diode

Symbol Parameter Test conditions Min. Typ. Max. Unit

ISD Source-drain current - 2.5 A

ISDM (1) Source-drain current (pulsed) - 10 A

VSD (2) Forward on voltage VGS = 0 V, ISD = 2.5 A - 1.6 V

trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 410 ns

Qrr Reverse recovery charge VDD = 60 V - 2.4 µC


(see Figure 19. Test circuit for inductive
IRRM Reverse recovery current - 11.7 A
load switching and diode recovery times)
trr Reverse recovery time ISD = 2.5 A, di/dt = 100 A/µs, - 540 ns

Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 3.3 µC


(see Figure 19. Test circuit for inductive
IRRM Reverse recovery current - 12.3 A
load switching and diode recovery times)

1. Pulse width is limited by safe operating area.


2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%.

DS5052 - Rev 12 page 4/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)

2.1 Electrical characteristics (curves)

Figure 1. Safe operating area for TO-3PF Figure 2. Thermal impedance for TO-3PF
ID AM03941v1 K ZTH_TO3PF
(A)

10

10µs
is
R ea
n)

1
ax s ar

10-1
(o
DS

100µs Zth=k*Rthj-c
i
by in th

1ms
m
ite tio n
Lim e ra
d

10ms
Op

0.1 Tj=150°C
Tc=25°C
S inlge
puls e
0.01 10-2
0.1 1 10 100 1000 VDS (V) 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 t p (s)

Figure 3. Safe operating area for H2PAK-2 and TO-220 Figure 4. Thermal impedance for H2PAK-2 and TO-220
HV37430 GC20540

Figure 5. Safe operating area for TO-247 Figure 6. Thermal impedance for TO-247
HV37440
GC20530

DS5052 - Rev 12 page 5/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)

Figure 7. Output characteristics Figure 8. Transfer characteristics


HV37460 HV37465

Figure 9. Normalized V(BR)DSS vs temperature Figure 10. Static drain-source on-resistance


HV37470 HV37480

Figure 11. Gate charge vs gate-source voltage Figure 12. Capacitance variations
HV37490 HV37500

DS5052 - Rev 12 page 6/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Electrical characteristics (curves)

Figure 13. Normalized gate threshold voltage vs


Figure 14. Normalized on resistance vs temperature
temperature
HV37520
HV37510

Figure 15. Source-drain diode forward characteristics Figure 16. Maximum avalanche energy vs TJ
HV37540 HV37530

DS5052 - Rev 12 page 7/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Test circuits

3 Test circuits

Figure 17. Test circuit for resistive load switching times Figure 18. Test circuit for gate charge behavior

VDD

12 V 47 kΩ
1 kΩ
100 nF
RL
2200 3.3
+ μF μF VDD
VD IG= CONST
VGS 100 Ω D.U.T.

VGS
RG D.U.T. pulse width +
2.7 kΩ
2200 VG
pulse width μF
47 kΩ

1 kΩ

AM01468v1 AM01469v1

Figure 19. Test circuit for inductive load switching and


Figure 20. Unclamped inductive load test circuit
diode recovery times

A A A L
D VD
fast 100 µH
G D.U.T. diode 2200 3.3
S B 3.3 1000 + µF µF VDD
B B
25 Ω D
µF + µF VDD ID
G D.U.T.
+ RG S
Vi D.U.T.
_
pulse width

AM01471v1
AM01470v1

Figure 22. Switching time waveform


Figure 21. Unclamped inductive waveform
ton toff
V(BR)DSS
td(on) tr td(off) tf
VD

90% 90%
IDM

10% VDS 10%


ID 0

VDD VDD VGS 90%

0 10%
AM01472v1
AM01473v1

DS5052 - Rev 12 page 8/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Package information

4 Package information

In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.

4.1 TO-220 type A package information

Figure 23. TO-220 type A package outline

0015988_typeA_Rev_23

DS5052 - Rev 12 page 9/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-220 type A package information

Table 8. TO-220 type A package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.55
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10.00 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13.00 14.00
L1 3.50 3.93
L20 16.40
L30 28.90
øP 3.75 3.85
Q 2.65 2.95
Slug flatness 0.03 0.10

DS5052 - Rev 12 page 10/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information

4.2 H²PAK-2 package information

Figure 24. H²PAK-2 package outline

8159712_9

DS5052 - Rev 12 page 11/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
H²PAK-2 package information

Table 9. H²PAK-2 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.30 4.70
A1 0.03 0.20
C 1.17 1.37
D 8.95 9.35
e 4.98 5.18
E 0.50 0.90
F 0.78 0.85
F2 1.14 1.70
H 10.00 10.40
H1 7.40 - 7.80
J1 2.49 2.69
L 15.30 15.80
L1 1.27 1.40
L2 4.93 5.23
L3 6.85 7.25
L4 1.50 1.70
M 2.60 2.90
R 0.20 0.60
V 0° 8°

Figure 25. H²PAK-2 recommended footprint

8159712_9

Note: Dimensions are in mm.

DS5052 - Rev 12 page 12/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information

4.3 TO-247 package information

Figure 26. TO-247 package outline

0075325_9

DS5052 - Rev 12 page 13/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-247 package information

Table 10. TO-247 package mechanical data

mm
Dim.
Min. Typ. Max.

A 4.85 5.15
A1 2.20 2.60
b 1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
ØP 3.55 3.65
ØR 4.50 5.50
S 5.30 5.50 5.70

DS5052 - Rev 12 page 14/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information

4.4 TO-3PF package information

Figure 27. TO-3PF package outline

7627132_6

DS5052 - Rev 12 page 15/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
TO-3PF package information

Table 11. TO-3PF mechanical data

mm
Dim.
Min. Typ. Max.

A 5.30 5.70
C 2.80 3.20
D 3.10 3.50
D1 1.80 2.20
E 0.80 1.10
F 0.65 0.95
F2 1.80 2.20
G 10.30 11.50
G1 5.45
H 15.30 15.70
L 9.80 10.00 10.20
L2 22.80 23.20
L3 26.30 26.70
L4 43.20 44.40
L5 4.30 4.70
L6 24.30 24.70
L7 14.60 15.00
N 1.80 2.20
R 3.80 4.20
Dia 3.40 3.80

DS5052 - Rev 12 page 16/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information

4.5 Packing information

Figure 28. Tape outline

10 pitches cumulative
tolerance on tape +/- 0.2 mm

Top cover P0 D P2
T tape
E

F
K0 W
B0

A0 P1 D1

User direction of feed

Bending radius
User direction of feed

AM08852v2

DS5052 - Rev 12 page 17/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Packing information

Figure 29. Reel outline

T
REEL DIMENSIONS

40 mm min.

Access hole

At slot location

A N

G measured
Tape slot
In core for
Full radius At hub
Tape start

Table 12. Tape and reel mechanical data

Tape Reel

mm mm
Dim. Dim.
Min. Max. Min. Max.

A0 10.5 10.7 A 330


B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base quantity 1000
P2 1.9 2.1 Bulk quantity 1000
R 50
T 0.25 0.35
W 23.7 24.3

DS5052 - Rev 12 page 18/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Ordering information

5 Ordering information

Table 13. Order codes

Order codes Marking Package Packing

STFW3N150 3N150 TO-3PF Tube

STH3N150-2 H3N150 H2PAK-2 Tape and reel

STP3N150 P3N150 TO-220


Tube
STW3N150 3N150 TO-247

DS5052 - Rev 12 page 19/22


STFW3N150, STH3N150-2, STP3N150, STW3N150

Revision history

Table 14. Document revision history

Date Revision Changes

12-Jan-2007 1 First release


17-Apr-2007 2 Added new value on Table 6.
14-May-2007 3 The document has been reformatted
29-Aug-2007 4 RDS(on) value changed, updated Figure 15
09-Apr-2008 5 Added new package: TO-3PF
13-Feb-2009 6 Added PTOT value for TO-3PF (Table 2: Absolute maximum ratings)
– Document status promoted from preliminary data to datasheet
01-Dec-2009 7
– Removed TO-220FH package and mechanical data
10-Dec-2009 8 Corrected VISO value in Table 2: Absolute maximum ratings
29-Jun-2010 9 Corrected unit in Table 3.
– Minor text changes
– Modified: Table 3
08-Feb-2013 10
– Changed: Figure 1

– Added: H2PAK-2 package


– Modified: Figure 1
– Updated: Figure 18, 19, 20 and 21
18-Feb-2014 11 – Updated: Figure 27 and Table 11
– Updated: Section 4: Package mechanical data
– Minor text changes
Updated Section 5 Ordering information.
12-May-2020 12
Minor text changes.

DS5052 - Rev 12 page 20/22


STFW3N150, STH3N150-2, STP3N150, STW3N150
Contents

Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8
4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9
4.1 TO-220 type A package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4.2 H²PAK-2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4.3 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
4.4 TO-3PF package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
4.5 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

5 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19


Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20

DS5052 - Rev 12 page 21/22


STFW3N150, STH3N150-2, STP3N150, STW3N150

IMPORTANT NOTICE – PLEASE READ CAREFULLY


STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST
products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST
products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of
Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service
names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
© 2020 STMicroelectronics – All rights reserved

DS5052 - Rev 12 page 22/22

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