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KTC3876 NPN Transistor Specifications

The document provides the production specifications for the KTC3876 NPN Silicon Epitaxial Planar Transistor, highlighting its features, applications, and maximum ratings. It includes detailed electrical characteristics, classification of DC current gain, and package outline dimensions. Additionally, it specifies the ordering information and shipping details for the device in SOT-23 package.

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51 views3 pages

KTC3876 NPN Transistor Specifications

The document provides the production specifications for the KTC3876 NPN Silicon Epitaxial Planar Transistor, highlighting its features, applications, and maximum ratings. It includes detailed electrical characteristics, classification of DC current gain, and package outline dimensions. Additionally, it specifies the ordering information and shipping details for the device in SOT-23 package.

Uploaded by

pervaiz akhtar
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3876

FEATURES
Pb
z Complementary To KTA1505.
Lead-free
z Excellent HFE Linearity.
z Low noise.

APPLICATIONS
z General purpose application, switching application.
SOT-23

ORDERING INFORMATION
Type No. Marking Package Code

KTC3876 WO▪/WY▪/WG▪ SOT-23

MAXIMUM RATING @ Ta=25℃ unless otherwise specified


Symbol Parameter Value Units

VCBO Collector-Base Voltage 35 V

VCEO Collector-Emitter Voltage 30 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 500 mA

PC Collector Power Dissipation 200 mW

Tj,Tstg Junction and Storage Temperature -55~150 ℃

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Document number: BL/SSSTC057 www.galaxycn.com


Rev.A 1
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3876

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V

Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V

Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V

Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA

Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA

VCE=1V,IC=100mA 70 400
DC current gain hFE VCE=6V,IC=400mA O 25
Y 40

Collector-emitter saturation voltage VCE(sat) IC=100mA, IB=10mA 0.25 V

Transition frequency fT VCE=6V, IC= 20mA 300 MHz


Collector output capacitance Cob VCB=6V,IE=0,f=1MHz 7 pF

CLASSIFICATION OF hFE
Rank O Y G

Range 70-140 120-240 200-400

Marking WO WY WG

Document number: BL/SSSTC057 www.galaxycn.com


Rev.A 2
BL Galaxy Electrical Production specification

NPN Silicon Epitaxial Planar Transistor KTC3876

PACKAGE OUTLINE
Plastic surface mounted package SOT-23

A SOT-23
E Dim Min Max
A 2.85 2.95
K B B 1.25 1.35
C 1.0Typical
D 0.37 0.43
D J
E 0.35 0.48
G G 1.85 1.95
H 0.02 0.1
H
C J 0.1Typical
K 2.35 2.45
All Dimensions in mm

SOLDERING FOOTPRINT

Unit : mm

PACKAGE INFORMATION

Device Package Shipping

KTC3876 SOT-23 3000/Tape&Reel

Document number: BL/SSSTC057 www.galaxycn.com


Rev.A 3

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