Variants discrete semiconductor > multi-junction > field effect transistor

V-Channel MOSFET
Whereas most FET devices are capable of han­
dling only small currents, the V-channel MOSFET
(which is often abbreviated as a VMOS FET and
has a V-shaped channel as its name implies) is
capable of sustained currents of at least 50A and
voltages as high as 1,000V. It is able to pass the
high current because its channel resistance is
well under 1Ω. These devices, commonly re­
ferred to as power MOSFETs, are available from all
primary semiconductor manufacturers and are
commonly used in switching power supplies.

Trench MOS
Figure 29-20. Schematic symbol variants for depletion The TrenchMOS or Trenchgate MOS is a MOSFET
MOSFETs, showing the body terminal separately accessi-
ble instead of being tied to the source terminal. variant that encourages current to flow vertically
rather than horizontally, and includes other in­
novations that enable an even lower channel re­
sistance, allowing high currents with minimal
heat generation. This device is finding applica­
tions in the automobile industry as a replace­
ment for electromechanical relays.

Values
The maximum values for JFETs, commonly found
listed in datasheets, will specify Vds (the drain-
source voltage, meaning the potential difference
between drain and source); Vdg (the drain-gate
voltage, meaning the potential difference be­
tween drain and gate); Vgsr (the reverse gate-
Figure 29-21. Schematic symbol variants for enhance-
source voltage); gate current; and total device
ment MOSFETs, showing the body terminal separately ac-
cessible instead of being tied to the source terminal. dissipation in mW. Note that the voltage differ­
ences are relative, not absolute. Thus a voltage of
Variants 50V on the drain and 25V on the source might be
acceptable in a component with a Vds of 25V.
A few FET variants exist in addition to the two Similarly, while a JFET’s “pinch-off” effect begins
previously discussed. as the gate becomes “more negative” than the
source, this can be achieved if, for example, the
MESFET source has a potential of 6V and the gate has a
The acronym stands for MEtal-Semiconductor potential of 3V.
Field Effect Transistor. This FET variant is fabrica­
ted from gallium arsenide and is used primarily JFETs and MOSFETs designed for low-current
in radio frequency amplification, which is outside switching applications have a typical channel re­
the scope of this encyclopedia. sistance of just a few ohms, and a maximum
switching speed around 10Mhz.

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discrete semiconductor > multi-junction > field effect transistor How to Use it

The datasheet for a MOSFET will typically include low output from a 5V digital device to control its
values such as gate threshold voltage, which may gate. A 4.7K pullup resistor is an appropriate val­
be abbreviated Vgs (or Vth) and establishes the ue to be used if the FET is to be used in conjunc­
relative voltage at which the gate starts to play tion with a TTL digital chip that may have a volt­
an active role; and the maximum on-state drain age swing of only approximately 2.5V between
current, which may be abbreviated Id(on) and es­ its low and high thresholds.
tablishes the maximum limiting current (usually
at 25 degree Centigrade) between source and What Can Go Wrong
gate.
Static Electricity
How to Use it Because the gate of a MOSFET is insulated from
the rest of the component, and functions much
The combination of a very high gate impedance, like a plate of a capacitor, it is especially likely to
very low noise, very low quiescent power con­ accumulate static electricity. This static charge
sumption in its off state, and very fast switching may then discharge itself into the body of the
capability makes the MOSFET suitable for many component, destroying it. A MOSFET is particu­
applications. larly vulnerable to electrostatic discharge be­
cause its oxide layer is so thin. Special care should
P-Channel Disadvantage be taken either when handling the component,
P-channel MOSFETs are generally less popular or when it is in use. Always touch a grounded
than N-channel MOSFETS because of the higher object or wear a grounded wrist band when han­
resistivity of P-type silicon, resulting from its low­ dling MOSFETs, and be sure that any circuit using
er carrier mobility, putting it at a relative disad­ MOSFETs includes appropriate protection from
vantage. static and voltage spikes.

Bipolar Substitution A MOSFET should not be inserted or removed

while the circuit in which it performs is switched
In many instances, an appropriate
on or contains residual voltage from undis­
enhancement-type MOSFET can be substituted
charged capacitors.
for a bipolar transistor with better results (lower
noise, faster action, much higher impedance,
Heat
and probably less power dissipation).
Failure because of overheating is of special con­
Amplifier Front Ends cern when using power MOSFETs. A Vishay Ap­
plication Note (“Current Power Rating of Power
While MOSFETs are well-suited for use in the front
Semiconductors”) suggests that this kind of com­
end of an audio amplifier, chips containing MOS­
ponent is unlikely to operate at less than 90 de­
FETs are now available for this specific purpose.
grees Centigrade in real-world conditions, yet
Voltage-Controlled Resistor the power handling capability listed in a data­
sheet usually assumes an industry standard of 25
A simple voltage-controlled resistor can be built
degrees Centigrade.
around a JFET or MOSFET, so long as its perfor­
mance remains limited to the linear or ohmic re­ On the other hand, ratings for continuous power
gion. are of little relevance to switching devices that
have duty cycles well below 100%. Other factors
Compatibility with Digital Devices also play a part, such as the possibility of power
A JFET may commonly use power supplies in the surges, the switching frequency, and the integ­
range of 25VDC. However, it can accept the high/ rity of the connection between the component

Chapter 29 263
What Can Go Wrong discrete semiconductor > multi-junction > field effect transistor

and its heat sink. The heat sink itself creates un­ Wrong Bias
certainty by tending to average the temperature As previously noted, applying forward bias to a
of the component, and of course there is no sim­ JFET can result in the junction between the gate
ple way to know the actual junction temperature, and the source starting to behave like a forward-
moment by moment, inside a MOSFET. biased diode, when the voltage at the gate is
Bearing in mind the accumulation of unknown greater than the voltage at the source by ap­
factors, power MOSFETs should be chosen on an proximately 0.6V or more (in an N-channel JFET).
extremely conservative basis. According to a tu­ The junction will present relatively little resist­
torial in the EE Times, actual current switched by ance, encouraging excessive current and de­
a MOSFET should be less than half of its rated structive consequences. It is important to design
current at 25 degrees, while one-fourth to one- devices that allow user input in such a way that
third are common. Figure 29-22 shows the real- user error can never result in this eventuality.
world recommended maximum drain current at
various temperatures. Exceeding this recom­
mendation can create additional heat, which
cannot be dissipated, leading to further accu­
mulation of heat, and a thermal runaway condi­
tion, causing eventual failure of the component.

Figure 29-22. Maximum advised drain current through a

power MOSFET, related to case temperature of the com-
ponent. Derived from EE Times Power MOSFET Tutorial.

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 discrete semiconductor > multi-junction > field effect transistor

Schematic Symbols A
This section contains a compilation of schematic
symbols for components that have been
described in this volume. They are sequenced
primarily in alphabetical order, as this section is
intended for use as an index. However, symbols
that have a strong similarity are grouped togeth­
er; thus potentiometer is found adjacent to re­
sistor, and all types of transistors are in the same
group.
The symbol variants shown in each blue rectan­
gle are functionally identical.
Where a component has mandatory polarity or
is commonly used with a certain polarity, a red
plus sign (+) has been added for guidance. This
sign is not part of the symbol. In the case of po­
larized capacitors, where a plus sign is normally
shown (or should be shown) with the symbol, the
plus sign is a part of the symbol and appears in
black.
This is not intended to be an exhaustive compi­
lation of symbol variants. Some uncommon ones
may not be here. However, the list should be suf­
ficient to enable identification of components in
this volume.

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What Can Go Wrong discrete semiconductor > multi-junction > field effect transistor

Figure A-1. Schematic symbols

266 Encyclopedia of Electronic Components Volume 1