IKWH40N67PR7

TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage

Final datasheet
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage with improved EMI characteristics
offering the best-in-class performance for high power and high switching frequency applications
TO-247 HCC – 3Pin
Features
• VCE = 670 V
• IC = 40 A
• Pin-to-pin creepage distance > 4.8 mm
• Pin-to-pin clearance distance > 3.4 mm
• Optimized monolithic diode for PFC applications
• Improved EMI behavior with lower dv/dt
• Very low VCEsat = 1.4 V (typ.) at 25°C
• Stable temperature behavior
• Low temperature dependence of VCEsat and Esw
• 2 kV ESD HBM compliant
• Easy parallel switching capability based on positive temperature coefficient of VCEsat 2021-10-27 restricted Copyright © Infineon T

• Product spectrum and PSpice Models: http://www.infineon.com/igbt/

Potential applications
• Residential Aircon / Commercial Aircon
• Residential HVAC / Commercial HVAC
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22

Description
C

G
E

Type Package Marking

IKWH40N67PR7 PG-TO247-3-U04 H40EPR7

Datasheet Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.00
www.infineon.com 2024-09-23
IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
Table of contents

Table of contents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
3 Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
4 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
6 Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Datasheet 2 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
1 Package

1 Package
Table 1 Characteristic values
Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Internal emitter LE 13 nH
inductance measured 5
mm (0.197 in.) from case
Storage temperature Tstg -55 150 °C
Soldering temperature Tsold wave soldering 1.6 mm (0.063 in.) from case 260 °C
for 10 s
Mounting torque M M3 screw, Maximum of mounting processes: 0.6 Nm
3
Thermal resistance, Rth(j-a) 40 K/W
junction-ambient
IGBT thermal resistance, Rth(j-c) 0.72 0.93 K/W
junction-case

2 IGBT
Table 2 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Collector-emitter voltage VCE Tvj ≥ 25 °C 670 V
DC collector current, IC Tc = 25 °C 88 A
limited by Tvjmax
Tc = 100 °C 54
Pulsed collector current, tp ICpulse 120 A
limited by Tvjmax
Turn-off safe operating VCE ≤ 670 V, Tvj ≤ 175 °C 120 A
area
Gate-emitter voltage VGE ±20 V
Transient gate-emitter VGE tp ≤ 0.5 µs, D < 0.001 ±30 V
voltage
Power dissipation Ptot Tc = 25 °C 208 W
Tc = 100 °C 104

Table 3 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Collector-emitter VCEsat IC = 40 A Tvj = 25 °C 1.4 1.75 V
saturation voltage
Tvj = 175 °C 1.7
(table continues...)

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TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
2 IGBT

Table 3 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Gate-emitter threshold VGEth IC = 0.228 mA, VCE = VGE 3.2 3.95 4.8 V
voltage
Zero gate-voltage collector ICES VCE = 670 V, VGE = 0 V Tvj = 25 °C 40 mA
current
Tvj = 175 °C 0.5 mA
Gate-emitter leakage IGES VCE = 0 V, VGE = 20 V 100 nA
current
Transconductance gfs IC = 40 A, VCE = 20 V 69.6 S
Input capacitance Cies VCE = 25 V, VGE = 0 V, f = 100 kHz 2283 pF
Output capacitance Coes VCE = 25 V, VGE = 0 V, f = 100 kHz 30.9 pF
Reverse transfer Cres VCE = 25 V, VGE = 0 V, f = 100 kHz 11.6 pF
capacitance
Gate charge QG VCC = 520 V, IC = 40 A, VGE = 15 V 102 nC
Turn-on delay time td(on) VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 16 ns
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 16
IC = 40 A
Rise time (inductive load) tr VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 15 ns
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 14
IC = 40 A
Turn-off delay time td(off) VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 146 ns
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 170
IC = 40 A
Fall time (inductive load) tf VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 28 ns
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 52
IC = 40 A
Turn-on energy Eon VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 0.66 mJ
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 1.19
IC = 40 A
Turn-off energy Eoff VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 0.4 mJ
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 0.61
IC = 40 A
(table continues...)

Datasheet 4 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
3 Diode

Table 3 (continued) Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Total switching energy Ets VCC = 400 V, VGE = 0/15 V, Tvj = 25 °C, 1.06 mJ
RG(on) = 9.8 Ω, IC = 40 A
RG(off) = 9.8 Ω
Tvj = 175 °C, 1.8
IC = 40 A
Operating junction Tvj -40 175 °C
temperature

3 Diode
Table 4 Maximum rated values
Parameter Symbol Note or test condition Values Unit
Repetitive peak reverse VRRM Tvj ≥ 25 °C 670 V
voltage
Diode pulsed current, tp IFpulse 5 A
limited by Tvjmax

Table 5 Characteristic values

Parameter Symbol Note or test condition Values Unit
Min. Typ. Max.
Operating junction Tvj -40 175 °C
temperature

Note: For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified.
Dynamic test circuit, parasitic inductance Lσ = 30 nH, parasitic capacitor Cσ = 23 pF from Fig. C.
2nd device for EC7 Diode = IDWD40E65E7

Datasheet 5 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
4 Characteristics diagrams

4 Characteristics diagrams
Power dissipation as a function of case temperature Collector current as a function of case temperature
Ptot = f(Tc) IC = f(Tc)
Tvj ≤ 175 °C Tvj ≤ 175 °C, VGE ≥ 15 V
210 90

80
180

70
150
60

120 50

90 40

30
60
20

30
10

0 0
25 50 75 100 125 150 175 25 50 75 100 125 150 175

Typical output characteristic Typical output characteristic

IC = f(VCE) IC = f(VCE)
Tvj = 25 °C Tvj = 175 °C
160 160

140 140

120 120

100 100

80 80

60 60

40 40

20 20

0 0
0 1 2 3 4 5 0 1 2 3 4 5

Datasheet 6 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
4 Characteristics diagrams

Typical transfer characteristic Typical collector-emitter saturation voltage as a

IC = f(VGE) function of junction temperature
VCE = 20 V VCEsat = f(Tvj)
VGE = 15 V
160 3.00

2.75
140
2.50
120
2.25

100
2.00

80 1.75

1.50
60
1.25
40
1.00

20
0.75

0 0.50
2 3 4 6 7 8 9 -50 -25 0 25 50 75 100 125 150 175

Gate-emitter threshold voltage as a function of Typical switching times as a function of collector

junction temperature current
VGEth = f(Tvj) t = f(IC)
IC = 0.228 mA VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 9.8 Ω
6 1000

4 100

2 10

0 1
0 25 50 75 100 125 150 175 20 30 40 50 60 70 80 90 100 110 120

Datasheet 7 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
4 Characteristics diagrams

Typical switching times as a function of gate resistor Typical switching times as a function of junction
t = f(RG) temperature
IC = 40 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V t = f(Tvj)
IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω
1000 1000

100 100

10 10

1 1
0 5 10 15 20 25 30 35 40 45 50 25 50 75 100 125 150 175

Typical switching energy losses as a function of Typical switching energy losses as a function of gate
collector current resistor
E = f(IC) E = f(RG)
VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V, RG = 9.8 Ω IC = 40 A, VCC = 400 V, Tvj = 175 °C, VGE = 0/15 V
8 3.0

2.7
7

2.4
6
2.1

5
1.8

4 1.5

1.2
3

0.9
2
0.6

1
0.3

0 0.0
20 30 40 50 60 70 80 90 100 110 120 0 5 10 15 20 25 30 35 40 45 50

Datasheet 8 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
4 Characteristics diagrams

Typical switching energy losses as a function of Typical switching energy losses as a function of
junction temperature collector emitter voltage
E = f(Tvj) E = f(VCE)
IC = 40 A, VCC = 400 V, VGE = 0/15 V, RG = 9.8 Ω IC = 40 A, Tvj = 175 °C, VGE = 0/15 V, RG = 9.8 Ω
2.0 2.4

1.8 2.1

1.6
1.8

1.4
1.5
1.2
1.2
1.0
0.9
0.8

0.6
0.6

0.4 0.3

0.2 0.0
25 50 75 100 125 150 175 200 250 300 350 400 450 500

Typical gate charge Typical capacitance as a function of collector-emitter

VGE = f(QG) voltage
IC = 40 A C = f(VCE)
f = 100 kHz, VGE = 0 V
16 10000

14

12 1000

10

8 100

4 10

0 1
0 20 40 60 80 100 120 0 5 10 15 20 25 30

Datasheet 9 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
4 Characteristics diagrams

IGBT transient thermal impedance as a function of

pulse width
Zth(j-c) = f(tp)
D = tp/T

0.1

0.01

0.001

1E-6 1E-5 0.0001 0.001 0.01 0.1 1

Datasheet 10 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
5 Package outlines

5 Package outlines PG-TO247-3-STD-NN4.8

PACKAGE - GROUP
NUMBER: PG-TO247-3-U04
MILLIMETERS
DIMENSIONS
MIN. MAX.
A 4.90 5.10
A1 2.31 2.51
A2 1.90 2.10
b 1.16 1.26
b1 1.90
b2 2.30
b3 1.55 1.65
b4 1.96 2.06
c 0.59 0.66
D 20.90 21.10
D1 16.25 16.85
D2 1.05 1.35
D3 0.55 0.65
E 15.70 15.90
E1 13.10 13.50
E2 2.14 2.34
e 5.44
N 3
L 19.80 20.10
L1 3.95 4.30

Figure 1

Datasheet 11 Revision 1.00

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IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
6 Testing conditions
Figure A.

Testing Conditions
6 Testing conditions Figure D.

VGE(t)

90% VGE 1/2 Lσ

EC7 diode L Cσ Cr

10% VGE VCC

t RG
DUT
IC(t) (IGBT)

90% IC 1/2 Lσ
90% IC

Figure C. Dynamic test circuit

10% IC 10% IC
Parasitic inductance L ,
t σ
parasitic capacitor Cσ,
VCE(t) relief capacitor C ,
r
(only for ZVT switching)

td(off) tf td(on) tr
t

Figure A.
t
VGE(t)
90% VGE

10% VGE
t

IC(t)

Figure D. Termal equivalent circuit

2% IC
t

VCE(t)

t2 t4
E = VCE x IC x dt E = VCE x IC x d t
off on
t1 t3 2% VCC
t
t1 t2 t3 t4

Figure B.

Figure 2

Datasheet 12 Revision 1.00

2024-09-23
Figure B.
IKWH40N67PR7
TRENCHSTOP™ IGBT 7 PR7 Reverse Conducting IGBT for boost PFC stage
Revision history

Revision history
Document revision Date of release Description of changes
0.10 2024-08-13 Preliminary datasheet
1.00 2024-09-23 Final datasheet

Datasheet 13 Revision 1.00

2024-09-23
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