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EEE 201 note

The document explains the formation of the space charge region in a p-n junction diode, detailing how the depletion region is created through the recombination of holes and electrons. It describes the forward-bias condition, where applying positive voltage to the p-type material allows current to flow easily, and the reverse-bias condition, which widens the depletion region and limits current flow to a small reverse saturation current. Additionally, it covers the creation of majority and minority carriers in n-type and p-type semiconductors, as well as the I-V characteristics of a p-n junction diode under different bias conditions.

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4 views

EEE 201 note

The document explains the formation of the space charge region in a p-n junction diode, detailing how the depletion region is created through the recombination of holes and electrons. It describes the forward-bias condition, where applying positive voltage to the p-type material allows current to flow easily, and the reverse-bias condition, which widens the depletion region and limits current flow to a small reverse saturation current. Additionally, it covers the creation of majority and minority carriers in n-type and p-type semiconductors, as well as the I-V characteristics of a p-n junction diode under different bias conditions.

Uploaded by

23108003
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
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Download as PDF, TXT or read online on Scribd
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1.

1 Space Charge region is develop across the p-n junction


diode.

The depletion region in a p-n junction forms when holes from the p-side diffuse into the
n-side and recombine with electrons, while electrons from the n-side diffuse into the p-
side and recombine with holes. This recombination leads to regions near the junction
being depleted of free carriers, leaving behind uncovered positive ions on the n-side and
negative ions on the p-side. These uncovered charges create an electric field across the
depletion region, resulting in a potential difference (barrier voltage) that opposes further
diffusion of carriers. The higher the barrier voltage, the fewer carriers can diffuse, limiting
the diffusion current.

1.2 Forward-Bias Condition (VD > 0V)

A semiconductor diode is forward-biased when the association


p-type and positive and n-type and negative has been
established.

A semiconductor diode is forward biased when a positive voltage


is applied to the p-type material and a negative voltage to the n-
type material. This applied voltage reduces the width of the
depletion region, lowering the barrier for electron and hole
movement across the junction. As a result, a majority of carriers
(electrons from the n-side and holes from the p-side) flow easily, allowing current to pass
through the diode. As the forward-bias voltage increases, the current rises exponentially
beyond a certain threshold (the knee of the curve). Typically, the voltage across a
forward-biased diode is less than 1 V.

1.3 Forward-Bias Condition (VD < 0V)

In reverse bias, a diode has a positive voltage applied to the n-


type material and a negative voltage applied to the p-type
material. This causes the depletion region to widen, increasing
the barrier for majority carriers (electrons in n-type and holes
in p-type) and preventing significant current flow. However,
minority carriers (electrons in p-type and holes in n-type) still
flow, creating a small **reverse saturation current** (Is),
typically in the nano-ampere range for silicon diodes. This
current quickly reaches its maximum and remains nearly constant, even if the reverse
voltage increases further.

1.4 The Creation of majority and minority carrier in n-type p-


type semiconductor.

n-Type Material
To create an N-type semiconductor, pentavalent impurity
atoms such as phosphorus, arsenic, or antimony (having five
valence electrons) are added to the semiconductor. These
atoms have an extra electron compared to the tetravalent
semiconductor atoms (like silicon). The fifth electron is loosely
bound and can easily move, making it a free electron that
contributes to electrical conduction.
In an N-type material, the majority carriers are
electrons, while the minority carriers are holes.

In an N-type semiconductor, pentavalent atoms (like


phosphorus or arsenic) are added to silicon or
germanium. These atoms donate extra electrons,
making electrons the majority carriers and holes the
minority carriers.

p-Type Material
A P-type semiconductor is formed by introducing trivalent impurity atoms, such as
boron, gallium, or indium, which have three valence electrons. This creates a deficiency
of one electron, leading to the formation of a hole (a positive charge carrier) in the crystal
lattice. The holes act as the charge carriers.

In a P-type material, the majority carriers are holes,


while the minority carriers are electrons.
In an N-type semiconductor, pentavalent atoms (like
phosphorus or arsenic) are added to silicon or germanium.
These atoms donate extra electrons, making electrons the
majority carriers and holes the minority carriers.

1.5 The I-V (current-voltage) characteristic of a p-n junction


diode

The relationship between the applied voltage across the diode and the resulting current.
It can be explained in two main regions:

1. Forward Bias:
 When the p-side is connected to the positive terminal and the n-side to the negative
terminal of the power supply, the diode is forward biased.
 At low voltage, only a small current flows because the barrier potential (around 0.7V
for silicon) prevents the flow of charge carriers.
 Once the threshold voltage is exceeded, the barrier potential is reduced, and a large
number of electrons and holes cross the junction, resulting in a rapid
increase in current. The I-V curve shows an exponential rise in current with increasing
voltage.

2. Reverse Bias:
 When the p-side is connected to the negative terminal and the n-side to the
positive terminal, the diode is reverse biased.
 In this condition, only a small reverse saturation current flows, caused by
minority carriers. The current remains nearly constant and very small as the
reverse voltage increases.
 At high reverse voltage, the diode may undergo breakdown (avalanche or Zener
breakdown), leading to a sharp increase in current.

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