AUTOMOTIVE GRADE

AUIRFP064N
Features
 Advanced Planar Technology V(BR)DSS 55V
 Ultra Low On-Resistance
 Dynamic dv/dt Rating RDS(on) max. 0.008
 175°C Operating Temperature
 Fast Switching ID 110A
 Fully Avalanche Rated
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *

Description S
D
G
Specifically designed for Automotive applications, this Cellular
design of HEXFET® Power MOSFETs utilizes the latest TO-247AC
processing techniques to achieve low on-resistance per silicon AUIRFP064N
area. This benefit combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are G D S
well known for, provides the designer with an extremely efficient Gate Drain Source
and reliable device for use in Automotive and a wide variety of
other applications.
Standard Pack
Base part number Package Type Orderable Part Number
Form Quantity
AUIRFP064N TO-247AC Tube 25 AUIRFP064N

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.

Symbol Parameter Max. Units

ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
IDM Pulsed Drain Current  390
PD @TC = 25°C Maximum Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy  480 mJ
IAR Avalanche Current  59 A
EAR Repetitive Avalanche Energy  20 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds (1.6mm from case) 300
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Symbol Parameter Typ. Max. Units
RJC Junction-to-Case ––– 0.75
RCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RJA Junction-to-Ambient ––– 40

HEXFET® is a registered trademark of Infineon.

*Qualification standards can be found at www.infineon.com

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Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.008  VGS = 10V, ID = 59A 
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Trans conductance 42 ––– ––– S VDS = 25V, ID = 59A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V,VGS = 0V,TJ =150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg Total Gate Charge ––– ––– 170 ID = 59A
Qgs Gate-to-Source Charge ––– ––– 32 nC VDS = 44V
Qgd Gate-to-Drain Charge ––– ––– 74 VGS = 10V, See Fig.6 and 13 
td(on) Turn-On Delay Time ––– 14 VDD = 28V
tr Rise Time ––– 100 ––– ID = 59A
ns
td(off) Turn-Off Delay Time ––– 43 ––– RG= 2.5
tf Fall Time ––– 70 ––– RD= 0.39See Fig.10
Between lead,
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
from package
LS Internal Source Inductance ––– 13 –––
pF and center of die contact
Ciss Input Capacitance ––– 4000 ––– VGS = 0V
Coss Output Capacitance ––– 1300 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 480 ––– ƒ = 1.0MHz, See Fig.5
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Continuous Source Current MOSFET symbol
IS ––– ––– 110
(Body Diode) showing the
A
Pulsed Source Current integral reverse
ISM ––– ––– 390
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C,IS = 59A,VGS = 0V 
trr Reverse Recovery Time ––– 110 170 ns TJ = 25°C ,IF = 59A
Qrr Reverse Recovery Charge ––– 450 680 nC di/dt = 100A/µs 

Notes:
 Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11).
 VDD = 25V, TJ = 25°C, L = 190H, RG = 25, IAS = 59A.(See fig. 12).
 ISD 59A, di/dt 290A/µs, VDD V(BR)DSS, TJ  175°C.
 Pulse width 300µs; duty cycle  2%.
 Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package
refer to Design Tip # 93-4

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Fig. 1 Typical Output Characteristics Fig. 2 Typical Output Characteristics

Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance vs. Temperature

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Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

Fig. 7 Typical Source-to-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

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Fig 10a. Switching Time Test Circuit

Fig 9. Maximum Drain Current vs. Case

Temperature

Fig 10a. Switching Time Waveforms

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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Fig. 12a. Unclamped Inductive Test Circuit

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig. 12b. Unclamped Inductive Waveforms

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

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Fig 14. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs

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TO-247AC Package Outline (Dimensions are

TO-247AC Part Marking Information

Part Number AUIRFP064N

Date Code
IR Logo YWWA Y= Year


WW= Work Week
XX XX

Lot Code

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Qualification Information
Automotive
(per AEC-Q101)
Qualification Level Comments: This part number(s) passed Automotive qualification. Infineon’s
Industrial and Consumer qualification level is granted by extension of the higher
Automotive level.
Moisture Sensitivity Level 3L-TO-247AC N/A
Class M4 (+/- 800V)†
Machine Model
AEC-Q101-002
Class H1B (+/- 4000V)†
ESD Human Body Model
AEC-Q101-001
Class C5 (+/- 2000V)†
Charged Device Model
AEC-Q101-005
RoHS Compliant Yes

† Highest passing voltage.

Revision History
Date Comments
 Updated datasheet with corporate template
09/15/2017
 Corrected typo error on part marking on page 8.

Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015
All Rights Reserved.

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In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
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the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of
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completeness of the product information given in this document with respect to such application.
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Infineon Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized
representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a
failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.

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