Physical verification
Physical verification
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ASIC Physical Design
Physical Verification (LVS)
• Layout Versus Schematic (LVS) verifies the connectivity of a
Verilog Netlist and Layout Netlist (Extracted Netlist from GDS)
• Tool extracts circuit devices and interconnects from the
layout and saved as Layout Netlist (SPICE format)
• As LVS performs comparison between 2 Netlist, it does
not compare the functionalities of both the Netlist
• Input Requirements
— LVS Rule deck
— Verilog Netlist
— Physical layout database (GDS)
— Spice Netlist (Extracted by the tool from GDS)
• LVS checks examples
— Short Net Error, Open Net Error, Extract errors, Compare errors
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ASIC Physical Design
Physical Verification (LVS)
• Open Net Error
Same net is routed in two different metal layers but not connected
Same net with different pin names Two different nets shorting together
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ASIC Physical Design
Physical Verification (LVS)
• Extract Errors
— Parameter Mismatch
— Device parameters on schematic and layout are compared
— Example: Let us consider a transistor here, LVS checks are necessary
parameters like width, length, multiplication factor etc.
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ASIC Physical Design
Physical Verification (LVS)
• Compare Errors
— Malformed Devices
— Pin Errors
— Device Mismatch
— Net Mismatch
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ASIC Physical Design
Physical Verification (ERC)
• Electrical Rule Check (ERC) is used to analyze or confirm
the electrical connectivity of an IC design
• ERC checks are run to identify the following errors in layout
— To locate devices connected directly between Power and Ground
— To locate floating Devices, Substrates and Wells
— To locate devices which are shorted
— To locate devices with missing connections
• Well Tap connection error: The Well Taps should bias the
Wells as specified in the schematics
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Courtesy: asicpd.blogspot.in
ASIC Physical Design
Physical Verification (ERC)
• Well Tap Density Error: If there is no enough Taps for a
given area then this error is flagged
• Taps need to be placed regularly which biases the Well
to prevent Latch-up
e.g., In typical 90nm process the Well Tap Density Rule
require Well-taps to be placed every 50 microns
• Tools: Mentor Graphics Calibre, Synopsys Hercules,
Cadence Assura, Magma Quartz
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ASIC Physical Design
DFM Checks
• Antenna Check (Gate-Oxide Integrity check)
— Maximum net length restriction connected to Gate terminal
• Redundant Contacts/ Via
— Multiple Via improves both Yield and Timing by resistance paralleling
• Metal Filling
— Narrow Metal Layer separated from other Metal Layers may get high
density of etchant than closely spaced wires
— Over etched filling up empty tracks with metal shapes to meet Metal
Density Rules
• Metal Slotting
— Wide metal lines (Power Nets) expands significantly due to the high
temperature during fabrication leads to destruction of the isolation
and passivation layer that protect the wafer
— To avoid it put slots or holes in these metal layers at regular intervals
— Slotting also prevent the stress damage during wafer dicing and
packaging 71
ASIC Physical Design
Formal Verification
• Formal Verification
— Verify the two representations of circuit design exhibits same behavior
— Checks the behavior of the Combinational Logics by checking the
Compare Points
— Targets implementation errors and not the design errors
— Power checks: checks Power Switches/ Retention Cells/ Isolation Cells/
Level Shifters and all power connectivity
— If any manual editing in the design then LEC has to be done at any
point of time
• Formal Verification • Informal Verification
— Complete coverage (Simulation)
— Effectively exhaustive — Incomplete coverage
simulation Limited amount of simulation
—
— Cover all possible — Spot check a limited number
sequences of inputs of input sequences
— Check all corner cases Many corner cases not checked
—
—No test vectors are needed
— Designer provides test vectors
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ASIC Physical Design
Formal Verification
• Types of Formal Verification
—Gate-level to Gate-level (Logical Equivalence Check after Routing)
• To ensure that some netlist post-processing did not change the functionality of
the circuit
—RTL to Gate-level (after Synthesis)
• To verify that the netlist correctly implements the original RTL code
—RTL to RTL (before Synthesis)
• To verify that two RTL descriptions are logically identical
• Logical Equivalence Check (LEC) will have two stages
—Constrains setup stage
—Logical Equivalence Check stage
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ASIC Physical Design
Parasitic Extraction
• Parasitic Extraction: Importance
— Shrinking process geometries
— New device structures
— An increasing number of metal layers at each new process node
— Much more closer nets at each new process node
— Increasing wire aspect ratio of height to width
— Increasing operating frequency
• Parasitic Capacitance can be reduced by using higher
metals, provide spacing, shielding, Avoid parallel routing
• At higher clock frequencies, RC interconnect modeling is
no longer adequate and inductance must be included in
interconnect modeling
• Reluctance (Inductance) effect becomes more and more
prominent as the resistance (both device and interconnect)
decreases and the operating frequency increases 74
ASIC Physical Design
Parasitic Extraction
• Capacitance
C= εo W H/d
— Transistors
▪ Depends on area of transistor gate, physical of materials, thickness of insulator,
diffusion to substrate
— Poly to Substrate L
▪ Parallel plate and fringing d i H
— Capacitance between W
conductors
▪ Coupling Capacitance
▪ Area Capacitance
▪ Fringing Capacitance
▪ Crossover Capacitance
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ASIC Physical Design
Parasitic Extraction
• Coupling Capacitance/ Lateral Capacitance
— The capacitance between nets on the same Metal layer
— Dominant over interlayer capacitances with every new process
technology
• Fringing Capacitance
— Capacitance between nets of
different Metal layers and
other layers due to Sidewall
Capacitance
• Parallel/Crossover Capacitance
— Capacitance between nets
area area
of 2 different Metal layers
SUBSTRATE
• Area Capacitance
— Capacitance between Metal layers and Substrate
• In modern processes, the width of interconnect wires at
lower levels of metal is so small that the Fringing Capacitance
of the wire is larger than the Area Capacitance
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ASIC Physical Design
Parasitic Extraction
• Resistance
R = ρ L/H W
— Wire Resistivity
— Complex 3D geometry around Vias
• Inductance
— Self Inductance;
— Mutual Inductance,
— At high frequency Skin effect possibility
• Models used for Parasitic Extraction
— Lumped-C, Lumped-RC, Lumped-RLC
— Pi segment
— Pin-to-pin delays are modeled by RC delays
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ASIC Physical Design
Parasitic Extraction
• Sub-femto Farad accuracy required for extraction of designs
at advanced technology nodes
• STA tool uses extraction data at fast corner while calculating
hold and slow data while calculating setup to be pessimistic
as possible, so that your chip doesn't fail after it comes back
from the fab
• Common Extraction Formats: Standard Parasitic Format
(SPF), Reduced Standard Parasitic Format (RSPF), Detailed
Standard Parasitic Format (DSPF), Standard Parasitic
Extraction Format (SPEF)
• Tools: Synopsys Star-RCXT, Cadence QRC, Mentor
Graphics Calibre xRC
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ASIC Physical Design
Timing Analysis
• Static Timing Analysis: Methodical analysis of a digital circuit
to determine if the timing constraints imposed are met and to
check the design is working properly
• Static Timing Analysis Flow
— Read the inputs required
— Setting up Constraints: IO Delay Constraints, DRVs, Timing Exceptions
(False/ Multi-Cycle paths), Recovery and Removal, Minimum Pulse
Width
— Construct Timing Graph: Partition Clock Domain, Ideal/ Propagated
Clock, Case Analysis
— Propagation
— Timing Report: End points with violations/ Paths enumeration
• Input Requirement
— Routed Netlist (.v)
— Libraries (.lib only)
— Constraints (.sdc)
— Delay Format (.sdf)
— Parasitic Values (.spef)
• Tools: Synopsys PrimeTime, Cadence ETS, Cadence Tempus
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ASIC Physical Design
Timing Analysis (SI)
• Signal Integrity (SI)
— SI refers to the quality of the signal transportation during the circuit
operation
— In deep sub-micron the delays associated with the logic elements far
outweighed delays associated with the interconnect
— SI effects like Crosstalk (both noise and timing), Voltage (IR) Drop,
Waveform Integrity and Electromigration have complex
interdependencies
— When the technology shrinks, the effect of coupling capacitance also
increases
— Crosstalk is the undesirable phenomenon, caused by the cross
coupling capacitance between metal wires in a chip
— Signal Integrity comes as an added feature of Timing Signoff tools
— Crosstalk effects can be analyzed by enabling the SI switch in tools
— If Crosstalk is enabled then the tool will by default do the timing
in On Chip Variation (OCV) mode
— Tool can read the .spef consists of coupling capacitance info. 80