High-Power Converters and High-Power Converters and

Applications in Drive/Wind/Power Industries Applications in Drive/Wind/Power Industries

Main Topics
1. Introduction
Bin Wu PhD, PEng
2. High-Power Rectifiers
Professor
Dept of Electrical & Computer 3. High-Power Voltage Source Inverters
Engineering
Ryerson University
4. PWM Current Source Converters
5. Applications in Motor Drive Industry
Tel: (416) 979-5000 Ext 6484
Email: [email protected] 6. Applications in Wind Energy Industry
www.ee.ryerson.ca/~bwu/
7. Applications in Power/Utility Industry

Ryerson Campus

IEEE PES/IAS Toronto Chapter Seminar IEEE PES/IAS Toronto Chapter Seminar 2
Bin Wu 10/2006 Bin Wu 10/2006

Topic 1 Introduction

Topic 1 Overview of High-Power Converters

Introduction • Converter Power Rating

• Electric Drive Systems: 100MW

• Wind Energy Systems: 6MW
• Overview of High-Power Converters
• High-Power Semiconductor Devices • Power Systems FACTS: 300MVA
• Converter Design Requirements HVDC: 3000MW

FACTS - Flexible AC Transmission System

HVDC - High Voltage DC Transmission

IEEE PES/IAS Toronto Chapter Seminar 3 IEEE PES/IAS Toronto Chapter Seminar 4
Bin Wu 10/2006 Bin Wu 10/2006

Topic 1 Introduction Topic 1 Introduction

Overview of High-Power Converters Overview of High-Power Converters
• Multipulse Diode Rectifiers • Multilevel Voltage Source Inverters (per phase diagram)

~
Cd

Cd Cd Cd
~ ~ ~

Cd

Neutral Point Cascaded

Two Level Flying Capacitor
Main Feature Inverter
Clamped (NPC) H-bridge (CHB)
Inverter
Inverter Inverter
Line current THD reduction

IEEE PES/IAS Toronto Chapter Seminar 5 IEEE PES/IAS Toronto Chapter Seminar 6
Bin Wu 10/2006 Bin Wu 10/2006

1
 Topic 1 Introduction Topic 1 Introduction
Overview of High-Power Converters Overview of Semiconductor Devices
• PWM Current Source Inverters (per phase diagram) • Power Diode
Ld Ld Ld

Cf Cf

Main feature 4500V/800A press-pack and 1700V/1200A module diodes

Simple converter configuration

IEEE PES/IAS Toronto Chapter Seminar 7 IEEE PES/IAS Toronto Chapter Seminar 8
Bin Wu 10/2006 Bin Wu 10/2006

Topic 1 Introduction Topic 1 Introduction

Overview of Semiconductor Devices Overview of Semiconductor Devices
• Silicon Controlled Rectifier (SCR) • Gate Turn Off Thyristor (GTO)

4500V/800A and 4500V/1500A SCRs 4500V/800A and 4500V/1500A GTOs

IEEE PES/IAS Toronto Chapter Seminar 9 IEEE PES/IAS Toronto Chapter Seminar 10
Bin Wu 10/2006 Bin Wu 10/2006

Topic 1 Introduction Topic 1 Introduction

Overview of Semiconductor Devices Overview of Semiconductor Devices
• Integrated Gate Controlled Thyristor (IGCT/GCT) • Insulated Gate Bipolar Transistor (IGBT)

6500V/1500A Symmetrical GCT

1700V/1200A and 3300V/1200A IGBT modules
GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional)

IEEE PES/IAS Toronto Chapter Seminar 11 IEEE PES/IAS Toronto Chapter Seminar 12
Bin Wu 10/2006 Bin Wu 10/2006

2
 Topic 1 Introduction Topic 1 Introduction
Overview of Semiconductor Devices Overview of Semiconductor Devices
• Device Voltage/Power Ratings • Comparison
Item GTO GCT IGBT
Maximum voltage and current
High High Low
ratings
Module or Press
Packaging Press pack Press pack
pack
Switching speed Slow Moderate Fast
Turn-on (di/dt) snubber Required Required Not required
Turn-off (dv/dt) snubber Required Not required Not required
Active overvoltage clamping No No Yes
Active di/dt and dv/dt control No No Yes
Active short circuit protection No No Yes
On-state loss Low Low High
Switching loss High Medium Low
Short Short
Behavior after destruction Open circuited
circuited circuited
Complex, Complex, Simple,
Gate Driver
separate integrated compact
Gate Driver Power Consumption High Medium Low

IEEE PES/IAS Toronto Chapter Seminar 13 IEEE PES/IAS Toronto Chapter Seminar 14
Bin Wu 10/2006 Bin Wu 10/2006

Topic 1 Introduction
Converter Design Requirements Topic 2
High-Power Rectifiers

• High energy efficiency • Six-pulse Diode Rectifier

• High power density • 12-pulse Diode Rectifier
• Low manufacturing cost • 18- and 24-pulse Diode Rectifiers
• High reliability • Comparison
• Effective fault protection
Why Use Multipulse Rectifiers?
• To reduce line THD
• To improve input power factor
• To avoid semiconductor devices in series

IEEE PES/IAS Toronto Chapter Seminar 15 IEEE PES/IAS Toronto Chapter Seminar 16
Bin Wu 10/2006 Bin Wu 10/2006

Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers

Six-Pulse Diode Rectifier Six-Pulse Diode Rectifier
• Rectifier Topology • Simulated Waveforms
id v v ab v ac v bc v ba v ca v cb v ab v ac

D1 D3 D5 Vd
va
Ls a ia
0 ωt
π 2π
ia
vb
Ls b ib Cd R 0 ωt
∞ Vd Vd
ib
vc
Ls c ic 0 ωt

ic
D4 D6 D2
0 ωt
(a) (b)
id
Assumption:
0 ωt
π 2π
C d = ∞ ⇒ Vd = constant D1 , D 6 D1 , D 2
ON ON

IEEE PES/IAS Toronto Chapter Seminar 17 IEEE PES/IAS Toronto Chapter Seminar 18
Bin Wu 10/2006 Bin Wu 10/2006

3
 Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers
Six-Pulse Diode Rectifier Six-Pulse Diode Rectifier
• Harmonic Content • THD and PF
ia
ia1 THD(%) PF
100 1.0

A: L s = 0.05 C
80 B: L s = 0.10 0.9
ia C: L s = 0.15 B
ia1
60 0.8
A
A
A: L s = 0.05
0 π 2π 3π 4π 40 0.7 B: L s = 0.10
B
C: L s = 0.15
Harmonics THD C
5 7 11 13 17 19 23 25
n (%) 20 0.6
I an / I a1 (%) 0 0.2 0.4 0.6 0.8 I a 1 (pu) 0 0.2 0.4 0.6 0.8 I a 1(pu)
63.4 38.7 8.99 8.64 4.22 3.61 2.48 2.02 75.7 (a) THD (b) PF
I a1 = 0.2pu
I an / I a1 (%)
30.4 8.79 6.31 3.40 2.30 1.89 1.04 1.03 32.7
I a1 = 1pu

IEEE PES/IAS Toronto Chapter Seminar 19 IEEE PES/IAS Toronto Chapter Seminar 20
Bin Wu 10/2006 Bin Wu 10/2006

Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers

12-Pulse Diode Rectifier 12-Pulse Diode Rectifier
• Rectifier Topology • Simplified Block Diagram
i A = i a′ + i ~a′ N2 Llk ia id
i A = i a′ + i ~a′ N2 Llk ia id vA a
A
Ls iA N1
vA b
Ls i A N1 vB
c Cd ∞
B δ = 0°
Vd
N3 Llk ia~
vB vC a~
δ = 0° Cd ∞ C
Vd ~
N3 Llk i ~a b

vC a~ c~
δ = 30 °
~ (a) 12-pulse diode rectifier
b
id
c~ i A = ia′ + ia~′ Llk ia
δ = 30°
δ = 0°
Phase Shifting Transformer L s iA Cd ∞
Vd

Llk ia~

Phase angle: δ = ∠Va~b~ − ∠VAB = 30° δ = 30 °

(b) Simplified diagram

IEEE PES/IAS Toronto Chapter Seminar 21 IEEE PES/IAS Toronto Chapter Seminar 22
Bin Wu 10/2006 Bin Wu 10/2006

Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers

12-Pulse Diode Rectifier 12-Pulse Diode Rectifier
• Waveforms and FFT • THD and PF
′ / Ia′1
Ian
n=1 THD = 24.1% THD(%) PF
0.8 25 1.00
ia ia1 (I a1 = 1pu ) 0.6 ′ / Ia′1 = Ian / Ia1
Ian
0.4 A: L s = 0.00
n =5 7
0.2 11 B: L s = 0.05
13 17 19 20 0.98
0 C: L s = 0.10 A
(a)
i′a = i′a / 2 I~a′ n / Ia~′1 (L lk = 0.05) B
n=1 THD = 24.1%
0.8
ia~′ Ia~′ n / Ia′~1 = Ia~n / I~a1 15 0.96
0.6 C
0.4 A
n =5 7 A: L s = 0.00
0.2 11 13 17 19 B B: L s = 0.05
0 10 0.94
(b) C: L s = 0.10
i A = ia′ + i~′a I An / I A1
C
n=1 (L lk = 0.05)
i A1 ( I A1 = 1pu ) 0.8 THD = 8.38%
0.6 5 0.92
0.4 0 0.2 0.4 0.6 0.8 I A1(pu) 0 0.2 0.4 0.6 0.8 I A1(pu)
0.2 11 13
(a) THD (b) PF
π 2π 3π 4π 0
0 250 500 750 1000 f (Hz)
(c) Comparison with six-pulse rectifier:
• No 5th or 7th harmonics in the line current. • THD is reduced
• Primary line current THD: 8.38% • PF is improved

IEEE PES/IAS Toronto Chapter Seminar 23 IEEE PES/IAS Toronto Chapter Seminar 24
Bin Wu 10/2006 Bin Wu 10/2006

4
 Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers
18-Pulse Diode Rectifier 18-Pulse Diode Rectifier
• Rectifier Topology • Simulated Waveforms
id
ia~′ = ia~ / 3
Llk ia
i′a i′a
Z
i A = ia′ + ia′~ + ia′
δ = − 20 °

Ls iA Llk ia~ Cd ∞
Vd i A = ia′ + ia~′ + ia′

δ = 0°

Llk ia
Z 0 π 2π 3π 4π
δ = 20 °
Phase-Shifting • No 5th, 7th, 11th or 13th harmonics in the line current
(Zigzag) Transformer • Lowest harmonic: 17th
• Line current THD: 3.06%

IEEE PES/IAS Toronto Chapter Seminar 25 IEEE PES/IAS Toronto Chapter Seminar 26
Bin Wu 10/2006 Bin Wu 10/2006

Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers

18-Pulse Diode Rectifier 18-Pulse Diode Rectifier
• Measured Waveforms • THD and PF

ia THD(%) PF
10 1.00
ia~
A: L s = 0.00
ia B: L s = 0.05 A
8 0.98
C: L s = 0.10 B
iA (L lk = 0.05) C
6 A 0.96

2 pu/div, 5ms/div B A: L s = 0.00

B: L s = 0.05
4 0.94
C C: L s = 0.10
(L lk = 0.05)
2 0.92
0 0.2 0.4 0.6 0.8 I A1(pu) 0 0.2 0.4 0.6 0.8 I A1(pu)
(a) THD (b) PF

Comparison with 12-pulse:

Improved THD
2 / 5 pu/div, 200Hz/div

IEEE PES/IAS Toronto Chapter Seminar 27 IEEE PES/IAS Toronto Chapter Seminar 28
Bin Wu 10/2006 Bin Wu 10/2006

Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers

24-Pulse Diode Rectifier 24-Pulse Diode Rectifier
• Converter Topology id • Typical Waveforms
Llk ia 0.60
Z (pu) ia′~ = ia~ / 4 THD = 24.0%
0.30
ia′
δ = − 15° 0
π 3π
i A = ia′ + ia~′ + i a′ + ia′) ia~
-0.30
Llk -0.60
(a)
0.60
Ls iA THD = 24.0%
δ = 0° Cd ∞ 0.30
Vd ia′ ia′)
0
Llk ia -0.30
Z -0.60
(b)
δ = 15° 1.50
i A = ia′ + ia~′ + ia′ + ia′) THD = 1.49%
0.75
Llk ia) 0

-0.75
δ = 30 ° -1.50
0
π 2π 3π 4π
Phase-Shifting (c)

(Zigzag) Transformer Line current THD: 1.49%

IEEE PES/IAS Toronto Chapter Seminar 29 IEEE PES/IAS Toronto Chapter Seminar 30
Bin Wu 10/2006 Bin Wu 10/2006

5
 Topic 2 High-Power Rectifiers Topic 2 High-Power Rectifiers
24-Pulse Diode Rectifier Comparison of Line Current THD
• THD and PF

THD(%) PF
8 1.00

A: L s = 0.00
B: L s = 0.05 A
6 0.98
C: L s = 0.10 B
I a1 I A1
(Llk = 0.05 )
C
4 0.96 6-pulse rectifier 12-pulse rectifier
A A: Ls = 0.00
B
B: Ls = 0.05
2 0.94
C C: Ls = 0.10
(Llk = 0.05)
0 0.92
0 0.2 0.4 0.6 0.8 I A1(pu) 0 0.2 0.4 0.6 0.8 I A1(pu)
(a) THD (b) PF

I A1 I A1

18-pulse rectifier 24-pulse rectifier

IEEE PES/IAS Toronto Chapter Seminar 31 IEEE PES/IAS Toronto Chapter Seminar 32
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI

Topic 3 Two-Level Voltage Source Inverter

High-Power Voltage Source Inverters • Inverter Configuration

• Two-Level Voltage Source Inverters (VSI) S1 S3 S5

• Multilevel Cascaded H-Bridge (CHB) Inverters iA

A
• Multilevel Neutral Point Clamped (NPC) Inverters Vd Cd B
iB
O
iC
• Other Multilevel Voltage Source Inverters C

S4 S6 S2

IEEE PES/IAS Toronto Chapter Seminar 33 IEEE PES/IAS Toronto Chapter Seminar 34
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Two-Level Voltage Source Inverter Two-Level Voltage Source Inverter
• PWM Schemes • Sinusoidal PWM
v vcr vmA v mB v mC

Vˆcr Vˆm
• Sinusoidal pulse width modulation (PWM) 0 ωt

• Space vector modulation (SVM) P

S1 S3 S5 v AN

Vd
A ωt

Why Use PWM Techniques? Vd B vBN

C Vd
• To control inverter output frequency (fundamental) 0 ωt
S4 S6 S2 v AB1
• To control inverter output voltage (fundamental) v AB
Vd
• To minimize harmonic distortion N
0
π 2π
ωt

IEEE PES/IAS Toronto Chapter Seminar 35 IEEE PES/IAS Toronto Chapter Seminar 36
Bin Wu 10/2006 Bin Wu 10/2006

6
 Topic 3 High-Power VSI Topic 3 High-Power VSI
Two-Level Voltage Source Inverter Two-Level Voltage Source Inverter
• Waveforms and v AB • Space Vector Modulation
FFT Vd
π 2π 3π

v AO P

2Vd / 3
S1 S3 S5

iA A
Vd B
• ma = 0.8, mf = 15, π 2π 3π
C
fm = 60Hz, fcr = 900Hz
V ABn / Vd S4 S6 S2
V AB1 = 0.49Vd 2m f ± 1
• Switching frequency mf ± 2 N
3m f ± 2 4m f ± 1
fsw = fcr = 900Hz
Eight switching states

IEEE PES/IAS Toronto Chapter Seminar 37 IEEE PES/IAS Toronto Chapter Seminar 38
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Two-Level Voltage Source Inverter Two-Level Voltage Source Inverter
• Space Vector Modulation • Space Vector Modulation
r jβ r v AB
Vd
V3 V2
2π
OPO PPO
SECTOR
II v AO
SECTOR III r ω SECTOR I 2Vd / 3
V ref
r r
V4 θ V1 iA
α
OPP PPP OOO POO
r π 2π 3π
V0
SECTOR IV SECTOR VI V AB n / Vd
SECTOR V
V AB1 = 0.566Vd
OOP r r POP
V5 V6

n
Space Vector Diagram
Simulated Waveforms and FFT
IEEE PES/IAS Toronto Chapter Seminar 39 IEEE PES/IAS Toronto Chapter Seminar 40
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Two-Level Voltage Source Inverter Multilevel Cascaded H-Bridge (CHB) Inverters
• Space Vector Modulation

v AB
VABn
Vd Why Use Multilevel Inverters?
• To increase operating voltage without devices in series
• To minimize THD with low switching frequencies fsw
v AO • To reduce dv/dt and EMI

Device Switching Frequency:

fsw < 1000Hz
Measured Waveforms and FFT

IEEE PES/IAS Toronto Chapter Seminar 41 IEEE PES/IAS Toronto Chapter Seminar 42
Bin Wu 10/2006 Bin Wu 10/2006

7
 Topic 3 High-Power VSI Topic 3 High-Power VSI
Multilevel CHB Inverters Multilevel CHB Inverters
• Five-Level Inverter
LOAD

O
• Seven- and Nine-Level Inverters (Per phase diagram)
A
A
S11 S31

A E vH 1
B C
E vH 1
S11 S31
S41 S21

E vH 1 E E
S 41 S 21
E vH 2
S12 S32

E vH 2
S12 S 32 S 42 S 22

E vH 2 E E E vH 3

S 42 S 22 S13 S33

E vH 3
N
S43 S23
E vH 4
• Waveform of vAN has five voltage levels: 2E, E, 0, -E, and -2E
N
N
• Converters in cascade, but no switching devices in series

IEEE PES/IAS Toronto Chapter Seminar 43 IEEE PES/IAS Toronto Chapter Seminar 44
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel CHB Inverters Multilevel CHB Inverters
• Carrier Based PWM – Phase Shifted • Carrier Based PWM – Phase Shifted
1.0
vcr1 v cr 2 v cr 3
• # of voltage levels: m = 7 vH1
v mA
0 • # of carriers: mc = m - 1 = 6 vH 2
• Switching occurs at
-1.0
v cr1− v cr 2 − vcr 3−
• Phase shift: 360° / mc = 60° vH3 different times
v g 11
v g 31 Carriers for H1 bridge:
vH 1
E π vcr1 and vcr1- vAN
3E
v g 12 0
v g 32 Carriers for H2 bridge:
vH 2
π vcr2 and vcr2-
E
• Small voltage steps
v g 13
vAB • Low EMI
v g 33
Carriers for H3 bridge: 6E • Low THD
vH 3
E π vcr3 and vcr3- 0

v AN
3E
0
v AN = v H 1 + v H 2 + v H 3
π
m=7 Waveforms of a 7- level CHB inverter

IEEE PES/IAS Toronto Chapter Seminar 45 IEEE PES/IAS Toronto Chapter Seminar 46
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel CHB Inverters Multilevel CHB Inverters
• Carrier Based PWM – Level Shifted • Carrier Based PWM – Level Shifted
vm vH 1
vcr1
2π 4π
vH 2
vcr2
π
• Switching occurs at
IPD vH 3

vcr3 2π 3π different times

vcr4 • # of voltage levels: v AN

m=5
vcr1
vm • Small voltage steps
vcr2 • # of carriers: v AB • Low EMI
APOD mc = m - 1 = 4 2π 4π
• Low THD
π 2π 3π
vcr3
vcr4
• IPD provides the best VANn / Vd

harmonic profile.
vm mf − 6 mf + 6
vcr1
vcr2 Waveforms and FFT
π POD VABn / Vd of a 7- level CHB
2π
vcr3
m f + 16
inverter with IPD
m f − 16 mf ± 2
vcr4 mf −8 mf +8 modulation

IEEE PES/IAS Toronto Chapter Seminar 47 IEEE PES/IAS Toronto Chapter Seminar 48
Bin Wu 10/2006 Bin Wu 10/2006

8
 Topic 3 High-Power VSI Topic 3 High-Power VSI
Multilevel CHB Inverters Multilevel CHB Inverters
• Modulation Scheme Comparison • Prototype at Ryerson

f sw,dev = 600 Hz

ma

IEEE PES/IAS Toronto Chapter Seminar 49 IEEE PES/IAS Toronto Chapter Seminar 50
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel CHB Inverters Multilevel Neutral Point Clamped (NPC) Inverters
• Prototype at Ryerson • Three Level NPC Inverter

S1
D1
DZ 1
E D2
Cd 1
S2 iA
A
iB
Vd iZ B O
Z iC
C
DZ 2 S 3
D3
E Cd 2

D4
S4
Inverter phase voltage vAZ Line-to-line voltage vAB
Clamping diodes: DZ1 and DZ2
Measured Waveforms (IPD, 7-level)

IEEE PES/IAS Toronto Chapter Seminar 51 IEEE PES/IAS Toronto Chapter Seminar 52
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel NPC Inverters Multilevel NPC Inverters
• Three Level NPC Inverter • Three Level NPC Inverter
r r
V15 V14 v g1
r
V8 r vg 4
r r Vref
V3 V2 π 2π 3π
r r
V9 V7 v AZ
r r r
V4 V0 V1
r θ r 0
V16 V13

r r r r v AB
V10 V5 V6 V12
0
r
V11 19 space vectors
r r 27 switching states f1 = 60Hz, Ts = 1/1080 sec, ma = 0.8, fsw = 570Hz
V17 V18

Space Vectors Diagram Simulated Waveforms

IEEE PES/IAS Toronto Chapter Seminar 53 IEEE PES/IAS Toronto Chapter Seminar 54
Bin Wu 10/2006 Bin Wu 10/2006

9
 Topic 3 High-Power VSI Topic 3 High-Power VSI
Multilevel NPC Inverters Multilevel NPC Inverters
• Three Level NPC Inverter • Laboratory Prototype at Ryerson
V AZn / Vd

V ABn / Vd

Harmonic Spectrum

IEEE PES/IAS Toronto Chapter Seminar 55 IEEE PES/IAS Toronto Chapter Seminar 56
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel NPC Inverters Multilevel NPC Inverters
• Measured Waveforms • High-level Topologies (per phase diagram)
P P
S1 S1
v AZ
E Cd
S2 S2
E Cd D1 D1
X
S3 S3
v AB D2 × 2 D2 × 2
E S4
X
D3 × 3
iA iA
Vd E A Vd Y A
V AZn D1′ × 3 S′1
Vd D1′ × 2
E
Y S′1 S′2
D2′ × 2
v AN Z v AN
S′2 S′3
V ABn E D′2 D′3
Vd
E
S′3 S′4

N N

(a ) ma = 0.8 (b) ma = 0.9

IEEE PES/IAS Toronto Chapter Seminar 57 IEEE PES/IAS Toronto Chapter Seminar 58
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Multilevel NPC Inverters Other Multilevel Voltage Source Inverters
• Component Count

Voltage Clamping dc
Switches
Level Diodes* capacitors
m 6(m-1) 3(m-1)(m-2) (m-1)
3 12 6 2
4 18 18 3 • NPC/H-Bridge Inverters
5 24 36 4
6 30 60 5 • Flying-Capacitor Multilevel Inverters
* The clamping diodes have the same voltage rating as
other switches.

Note:
The number of clamping diodes increases substantially
with the voltage level.

IEEE PES/IAS Toronto Chapter Seminar 59 IEEE PES/IAS Toronto Chapter Seminar 60
Bin Wu 10/2006 Bin Wu 10/2006

10
 Topic 3 High-Power VSI Topic 3 High-Power VSI
Other Multilevel Voltage Source Inverters Other Multilevel Voltage Source Inverters
• Five-Level NPC/CHB Inverter • Laboratory Prototype at Ryerson

S11 S 21
E
Cd
S12 S 22
Vd 1 v AN Vd 2 vBN Vd 3 vCN
S13 S23
Cd
E
S14 S 24

Compared with three-level NPC Topology:

- Voltage levels increases from three to five
- Inverter output voltage and power are doubled
- Device count is doubled19 Five-Level NPC/CHB Inverter

IEEE PES/IAS Toronto Chapter Seminar 61 IEEE PES/IAS Toronto Chapter Seminar 62
Bin Wu 10/2006 Bin Wu 10/2006

Topic 3 High-Power VSI Topic 3 High-Power VSI

Other Multilevel Voltage Source Inverters Other Multilevel Voltage Source Inverters
• Seven-Level Flying Capacitor Inverter • Seven-Level Flying Capacitor Inverter
v AN

S1
2π 4π
S2

S3 v AB

S4
2π 4π
Vd
( 4E )
V AB n / V d
S 4′
m f = 12
S 3′ 4m f ± 1
4m f − 5 4m f + 5
S 2′

S1′

Waveforms and FFT (Phase shifted PWM)

IEEE PES/IAS Toronto Chapter Seminar 63 IEEE PES/IAS Toronto Chapter Seminar 64
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters

Topic 4 Current Source Inverter

PWM Current Source Converters • Inverter Topology
S1 S3 S5
g1 g3 g5
Symmetrical GCTs
iw is
A
• Current Source Inverter (CSI) Id v AB ic

Dual-bridge CSI
B O
•
• Current Source Rectifier (CSR) C
LOAD
Cf Cf Cf
Dual-bridge CSR
S4 S6 S2
• g4 g6 g2
Function of Cf :
- Assist GCT commutation
- Reduce harmonic distortion
Features:
- Simple topology – no antiparallel diodes
- Reliable short circuit protection – constant dc current
- Very low dv/dt on motor terminals

IEEE PES/IAS Toronto Chapter Seminar 65 IEEE PES/IAS Toronto Chapter Seminar 66
Bin Wu 10/2006 Bin Wu 10/2006

11
 Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Inverter Current Source Inverter
• PWM Schemes • Trapezoidal PWM (TPWM)
v cr vm

Vˆm Vˆcr
0 ωt
π 2π π 2π
• Trapezoidal PWM (TPWM) 3 3

• Selective Harmonic Elimination (SHE) v g1 ωt

2π
• Space Vector Modulation (SVM) vg2 ωt
vg3 ωt

vg4 ωt
vg5 ωt
vg6 ωt

iw
Id
0 ωt
π 2π π 2π
3 3

Number of pulses per half cycle: Np = 7

IEEE PES/IAS Toronto Chapter Seminar 67 IEEE PES/IAS Toronto Chapter Seminar 68
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Inverter Current Source Inverter
• Trapezoidal PWM (TPWM) • Selective Harmonic Elimination (SHE)

f1 = 13.8Hz, N p = 13, iw
π
f sw = 180Hz −θ1 Id
3
0 ωt
θ1 θ2 π π 2π π 2π
6 3 3
π
−θ2
3

• Switching angles are selected to eliminate low-order

Harmonics such as 5th and 7th
f 5 = 5Hz, N p = 31,
f sw = 155Hz • Off-line calculation

IEEE PES/IAS Toronto Chapter Seminar 69 IEEE PES/IAS Toronto Chapter Seminar 70
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Inverter Current Source Inverter
• Selective Harmonic Elimination (SHE) • Selective Harmonic Elimination (SHE)

iw
( a)
Id
f1 = 20Hz, N p = 7
2π 4π 6π
I w5 = I w7 = I w11 = 0

I wn I w1, max
(b)
f1 = 35Hz, N p = 5
3( N p − 1) − 1 3( N p − 1) + 1
I w5 = I w7 = 0

(c)
f1 = 60Hz, N p = 3
I w5 = 0

Harmonic eliminated: 5th, 7th and 11th; fsw = 420Hz

IEEE PES/IAS Toronto Chapter Seminar 71 IEEE PES/IAS Toronto Chapter Seminar 72
Bin Wu 10/2006 Bin Wu 10/2006

12
 Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Inverter Current Source Inverter
• Space Vector Modulation (SVM) • Space Vector Modulation (SVM)
jβ
r Sector VI I II III IV V
I3 r
SECTOR III SECTOR II I 1,2,3... r6 1 0 6 1 0 1 2 0 1 2 0 2 3 0 2 3 0
( I6 )
r
r ω I ref r v g1
I4 I2
vg 2
θ
vg 3
α Ts Ts
SECTOR IV SECTOR I
r
I0 vg 4
r r vg 5
I5 I1
vg 6

SECTOR V SECTOR VI iw
r Id
I6 0
π 2π

Seven current space vectors

IEEE PES/IAS Toronto Chapter Seminar 73 IEEE PES/IAS Toronto Chapter Seminar 74
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Inverter Current Source Inverter
• Inverter Output Waveforms (SVM) • PWM Scheme Comparison
iw
Item SVM TPWM SHE
2π 4π
DC Current Utilization
0.707 0.74 0.73 to 0.78
I w1,max / I d
is
Dynamic performance High Medium Low
Real time or
Digital Implementation Real time Look-up table
look-up table
Harmonic Performance Adequate Good Best
v AB
dc Current Bypass Operation Yes No Optional
2π 4π

f1 = 60Hz, fsw = 540Hz, Np = 9 and ma = 1

IEEE PES/IAS Toronto Chapter Seminar 75 IEEE PES/IAS Toronto Chapter Seminar 76
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Dual-Bridge CSI Dual-Bridge CSI
• Inverter Topology • Space Vector Diagram

r
I3
r r
i1 i3 I9 I8
L1 L2
r
r I15 r
S1 S3 S5 S1′ S′3 S′5 I4 I2
r r
I16 I14 r
iw is I ref
r r
I10 I0
r
vd r θ r I7
I17 I13

r r
I5 r I1
I18
Cf r r
S4 S6 S2 S′4 S′6 S′2 I11 I12

i2 i4 r
I6

19 vectors and 51 switching states

IEEE PES/IAS Toronto Chapter Seminar 77 IEEE PES/IAS Toronto Chapter Seminar 78
Bin Wu 10/2006 Bin Wu 10/2006

13
 Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Dual-Bridge CSI Dual-Bridge CSI
• DC Current Balance Control • DC Current Balance Control
i3
i1
L1 S1 S3 S5 L2 S1′ S 3′ S 5′

vd

S4 S6 S2 S 4′ S 6′ S 2′

i2
i4

Current paths with switching state [16;56] Dc current change with redundant switching states

IEEE PES/IAS Toronto Chapter Seminar 79 IEEE PES/IAS Toronto Chapter Seminar 80
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Dual-Bridge CSI Current Source Rectifier
• DC Current Balance Control • Rectifier Topology
Ld id
g1
S1 S3 S5
vs
Ls is iw
A
L
O vd
B A
D
C
Utility Cf
Supply S4 S6 S2

• Switching devices: • Function of Cf :

Symmetrical GCT To assist GCT commutation;
To reduce line current THD.
IEEE PES/IAS Toronto Chapter Seminar 81 IEEE PES/IAS Toronto Chapter Seminar 82
Bin Wu 10/2006 Bin Wu 10/2006

Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Current Source Rectifier Current Source Rectifier
• Selective Harmonic Elimination (SHE) • Experiments
BP BP
v g1
ωt
θ1 θ 2 θ3 θ5 θ6 θ8 θ10 θ11 θ12 2π

vg 4 ωt
2π

iw
Id 2π
ωt
β1 β 2 2β 0

ma = 0.7 ma = 0.95
• Bypass pulse (BP) - make iw adjustable Trace A: current in switch S1
Trace B: Rectifier input current iw
Trace C: Line current is

IEEE PES/IAS Toronto Chapter Seminar 83 IEEE PES/IAS Toronto Chapter Seminar 84
Bin Wu 10/2006 Bin Wu 10/2006

14
 Topic 4 PWM Current Source Converters Topic 4 PWM Current Source Converters
Dual-Bridge CSR Dual-Bridge CSR
• Rectifier Topology Ld id
• Experimental Waveforms
Ls is iw

iA = is + i~s
vA δ = 30°
Cf
L
vB O
A
D
vC Ls i~s iw~

δ = 0°
Cf
Modulation index: 0.5 Modulation index: 0.9
• Use 12-pulse transformer to cancel the 5th and 7th harmonics
Trace A: iA - line current on transformer primary side
• Use PWM to eliminate the 11th and 13th harmonics
• The lowest harmonic in the line current is the 17th Trace B: is - line current on transformer secondary side
• Very low line current harmonic distortion Trace C: iw - rectifier input current
IEEE PES/IAS Toronto Chapter Seminar 85 IEEE PES/IAS Toronto Chapter Seminar 86
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry

Topic 5 VSI Fed MV Drives

Applications in Motor Drive Industry • Drive Block Diagram

• VSI Fed Medium Voltage (MV) Drives

• CSI Fed MV Drives
• Application Examples

Line- and motor-side filters:

Medium Voltage: 2.3KV to 13.8KV Optional, depending on converter topologies and harmonic
requirements

IEEE PES/IAS Toronto Chapter Seminar 87 IEEE PES/IAS Toronto Chapter Seminar 88
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

VSI Fed MV Drives VSI Fed MV Drives
• Two-Level VSI Drive • Two-Level VSI Drive

Features
• Modular structure using PCBB
• Simple PWM Scheme
Lf
• Active voltage clamping for series connected IGBTs
• N+1 Provision
Cd
• Ease of dc capacitor precharging
• Provision for four-quadrant operation and regenerative braking

Cf Drawbacks
• High dv/dt in the inverter output voltage
• Large size output LC filter

IEEE PES/IAS Toronto Chapter Seminar 89 IEEE PES/IAS Toronto Chapter Seminar 90
Bin Wu 10/2006 Bin Wu 10/2006

15
 Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry
VSI Fed MV Drives VSI Fed MV Drives
• NPC Inverter Fed Drives • NPC Inverter Fed Drives

Ls
Rs Ds
Cd
Cs Lf

Cs
Cd
Rs Ds Cf

Ls

Three-Level GCT Inverter

Source: ABB
Three-Level GCT Inverter

IEEE PES/IAS Toronto Chapter Seminar 91 IEEE PES/IAS Toronto Chapter Seminar 92
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

VSI Fed MV Drives VSI Fed MV Drives
• NPC Inverter Fed Drives • NPC Inverter Fed Drives
Main Specifications (with GCT Inverter)
Nominal input voltage 2300V, 3300V, 4160V
Output power rating 400 ~ 6700HP (0.3 ~ 5 MW)
Output voltage rating 0 ~ 2300V, 0 ~ 3300V, 0 ~ 4160V
Output frequency 0 ~ 66Hz (up to 200Hz optional) Cd
Typically > 98.0% (including output filter losses Lf
Drive system efficiency
but excluding transformer losses)
Input power factor > 0.95% ( Displacement power factor > 0.97)
Output waveform Sinusoidal (with output filter)
Motor type Induction or synchronous Cd Cf
Standard: 10% for one minute every 10 minutes
Overload capability
Optional: 150% for one minute every 10 minutes
Cooling Forced air or liquid
Mean time between failure > 6 years
(MTBF) Drive Configuration (with IGBT Inverter)
Regenerative braking capability No

IEEE PES/IAS Toronto Chapter Seminar 93 IEEE PES/IAS Toronto Chapter Seminar 94
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

VSI Fed MV Drives VSI Fed MV Drives
• NPC Inverter Fed Drives • NPC Inverter Fed Drives
Main Specifications (With IGBT Inverter)
Standard: 12-pulse diode rectifier
Rectifier Optional: 24-pulse diode rectifier
or active front end (PWM IGBT rectifier)
Displacement power factor
> 0.96 (12-pulse diode rectifier)
( cosϕ )
Nominal utility/motor voltage 2300V, 3300V, 4160V, 6600V
0.8 ~ 2.4MW @2300V
1.0 ~ 3.1MW @3300V
Output power rating 1.3 ~ 4.0MW @4160V
4.7 ~ 7.2MW @4160V (Parallel converter configuration)
0.6 ~ 2.0MW @6600V
Output voltage range 0 ~ 2300V, 0 ~ 3300V, 0 ~ 4160V, 0 ~ 6600V
SIMOVERT MV
Courtesy of Output frequency 0 ~100Hz (standard)
Siemens Motor speed range 1:1000 (with encoder)
Typically > 98.5%
Drive system efficiency
IGBT based three-level NPC inverter fed drive (at rated operating point, excluding transformer losses)

IEEE PES/IAS Toronto Chapter Seminar 95 IEEE PES/IAS Toronto Chapter Seminar 96
Bin Wu 10/2006 Bin Wu 10/2006

16
 Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry
VSI Fed MV Drives VSI Fed MV Drives
• CHB Inverter Fed Drives • CHB Inverter Fed Drives

Drive Configuration
δ = −20 ° Multipulse Diode Rectifier Multilevel CHB Inverter

Cd
Rated Transformer Rated
Rectifier Secondary Power Voltage
Utility/Motor Secondary IGBTs H-Bridge f sw,IGBT f sw,inv
Pulses Windings Cells Levels
Voltage Cables Output
δ = 0°
2300V 18 9 27 9 36 7 480V 600Hz 3600Hz
3300V 24 12 36 12 48 9 480V 600Hz 4800Hz
4160V 30 15 45 15 60 11 480V 600Hz 6000Hz
δ = +20 °
Typical power range: 0.3 ~ 10MW (400 ~ 14000HP)

Seven-Level CHB Inverter Fed Drive

IEEE PES/IAS Toronto Chapter Seminar 97 IEEE PES/IAS Toronto Chapter Seminar 98
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

VSI Fed MV Drives VSI Fed MV Drives
• CHB Inverter Fed Drives • CHB Inverter Fed Drives
P o w er
C e ll

U tility
S u p p ly

Two units of 3300V

CHB inverter in cascade Perfect Harmony, Courtesy of ASI Robicon

P h ase S h iftin g IGBT based cascaded H-bridge inverter fed MV drive

T ran sfo rm er M (4.16KV / 7.5MW)

IEEE PES/IAS Toronto Chapter Seminar 99 IEEE PES/IAS Toronto Chapter Seminar 100
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

VSI Fed MV Drives CSI Fed MV Drives
• CHB Inverter Fed Drives • PWM CSI Fed Drive

Features
• Modular design for cost reduction
• Nearly sinusoidal inputs and output currents without LC filters
• Provision for N+1 design for high reliability

Drawbacks
• Costly phase shifting transformers
• Large number of cables between transformer secondaries and
power converters
• The transformer normally installed inside cabinet – larger footprint,
more cooling requirement

PowerFlex 7000 Frame A, Rockwell Automation Canada

CSI GCT Drive System

IEEE PES/IAS Toronto Chapter Seminar 101 IEEE PES/IAS Toronto Chapter Seminar 102
Bin Wu 10/2006 Bin Wu 10/2006

17
 Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry
CSI Fed MV Drives CSI Fed MV Drives
• PWM CSI Fed Drive • Prototype of CSI Drive at Ryerson

PowerFlex 7000 Frame C, Rockwell Automation Canada

4160V / 7MW GCT Drive System Successful research collaboration with

Rockwell Automation for over 13 years

IEEE PES/IAS Toronto Chapter Seminar 103 IEEE PES/IAS Toronto Chapter Seminar 104
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

Drive Application Examples Drive Application Examples
• Megawatt Drive for Pipeline Pumps

Trans Mountain
Mining / cement Petrochemical Metals Paper / pulp Pipeline

Length: 1,150 km
Pipe Size: 24” and 30”
Capacity: 225,000 bpd
Pump stations: 10 Source: Kinder Morgan Canada Inc.
Marine Oil / gas Power generation Water / waste water

Source: Robicon
IEEE PES/IAS Toronto Chapter Seminar 105 IEEE PES/IAS Toronto Chapter Seminar 106
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

Drive Application Examples Drive Application Examples
• 100MW Wind Tunnel Drive • 100MW Wind Tunnel Drive
- Application: NASA wind tunnel
- Motor: Synchronous, 100MW, 12.5KV
- Load: High power fan
- Speed Range: 360 - 600rpm

1. Supply system
2. Transformer
3. Converters
4. Motor
Source: ABB
5. Excitation system
6. Filter
Source: ABB
Load Commutated Current Source Inverter

IEEE PES/IAS Toronto Chapter Seminar 107 IEEE PES/IAS Toronto Chapter Seminar 108
Bin Wu 10/2006 Bin Wu 10/2006

18
 Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry
Drive Application Examples Drive Application Examples
• 100MW Wind Tunnel Drive • Summary
Switching
Inverter Configuration Power Range Manufacturer
Device
Two-Level Voltage Alstom
IGBT 1.4MVA – 7.2MVA
Source Inverter (VDM5000)
0.3MVA – 5MVA ABB (ACS1000)
GCT
3MVA – 27MVA (ACS6000)
General Electric
GCT 3MVA – 20MVA
Three-Level Neutral (Innovation Series MV-SP)
Point Clamped Inverter Siemens
IGBT 0.6MVA – 7.2MVA
(SIMOVERT-MV)
General Electric–Toshiba
IGBT 0.3MVA – 2.4MVA
(Dura-Bilt5 MV)
ASI Robicon
0.3MVA – 22MVA
(Perfect Harmony)
Source: ABB Toshiba
Multilevel Cascaded H- 0.5MVA – 6MVA
IGBT (TOSVERT-MV)
Bridge Inverter
Six-phase synchronous motor General Electric
0.45MVA – 7.5MVA (Innovation MV-GP Type
(100MW, 12.5KV, 2.8KA) H)

IEEE PES/IAS Toronto Chapter Seminar 109 IEEE PES/IAS Toronto Chapter Seminar 110
Bin Wu 10/2006 Bin Wu 10/2006

Topic 5 Applications in Drive Industry Topic 5 Applications in Drive Industry

Drive Application Examples Ryerson LEDAR Research Lab
• Summary Laboratory for Electric Drive Applications and Research (LEDAR)

Switching
Inverter Configuration Power Range Manufacturer
Device

Toshiba
NPC/H-bridge Inverter IGBT 0.4MVA – 4.8MVA
(TOSVERT 300 MV)

Flying-Capacitor Alstom
IGBT 0.3MVA – 8MVA
Inverter (VDM6000 Symphony)

Symmetri
PWM Current Source Rockwell Automation
cal 0.2MVA – 20MVA
Inverter (PowerFlex 7000) Lab A Lab B
GCT

>10MVA
Siemens The best research facility in high-power converters
(SIMOVERT S)
and AC drives in a Canadian university
Load Commutated
SCR >10MVA ABB (LCI)
Inverter

>10MVA
Alstom Rockwell
(ALSPA SD7000)
CFI Automation

IEEE PES/IAS Toronto Chapter Seminar 111 IEEE PES/IAS Toronto Chapter Seminar 112
Bin Wu 10/2006 Bin Wu 10/2006

Topic 6 Applications in Wind Energy Industry

Topic 6 Introduction
Applications in Wind Energy Industry • Overview

• Introduction
• Doubly Fed Induction Generator
• Direct-Drive Synchronous Generator

IEEE PES/IAS Toronto Chapter Seminar 113 IEEE PES/IAS Toronto Chapter Seminar 114
Bin Wu 10/2006 Bin Wu 10/2006

19
 Topic 6 Applications in Wind Energy Industry Topic 6 Applications in Wind Energy Industry
Introduction Introduction
• Wind Generator Power Rating • Market Survey
World Market Share in 2004

Source: Vestas
Source: National Renewable Energy Laboratory

IEEE PES/IAS Toronto Chapter Seminar 115 IEEE PES/IAS Toronto Chapter Seminar 116
Bin Wu 10/2006 Bin Wu 10/2006

Topic 6 Applications in Wind Energy Industry Topic 6 Applications in Wind Energy Industry
Introduction Introduction
• Market Survey • Market Survey
Wind Energy Installation as of December 2005 Wind Energy Installation as of December 2005
Rate of Country/ Additional capacity Rate of growth Total capacity installed
Country/ Additional capacity Total capacity installed Region in 2005 (MW) 2005 (%) end 2005 (MW)
growth 2005
Region in 2005 (MW) end 2005 (MW)
(%) 8 China 496,0 64,9 1.260,0
1 Germany 1798,8 10,8 18.427,5 9 The
141,0 13,1 1.219,0
2 Spain 1764,0 21,3 10.027,0 Netherlands

3 USA 2424,0 36,0 9.149,0 10 Japan 143,8 16,0 1.040,0

11 Portugal 500,0 95,8 1.022,0
4 India 1430,0 47,7 4.430,0
12 Austria 213,0 35,1 819,0
5 Denmark 4,0 0,1 3.128,0
13 France 371,2 96,2 757,2
6 Italy 452,4 35,8 1.717,4
14 Canada 239,0 53,8 683,0
7 United
465,0 52,4 1.353,0 15 Greece 100,3 21,2 573,3
Kingdom
8 China 496,0 64,9 1.260,0 Source: http://www.wwindea.org

Source: http://www.wwindea.org By June 2006, the installed capacity in Canada reaches 1049MW

IEEE PES/IAS Toronto Chapter Seminar 117 IEEE PES/IAS Toronto Chapter Seminar 118
Bin Wu 10/2006 Bin Wu 10/2006

Topic 6 Applications in Wind Energy Industry Topic 6 Applications in Wind Energy Industry
Introduction Doubly Fed Induction Generator
• Products Overview

Zephyros GE Energy Siemens Vestas REpower Multibrid Enercon

Type
Z72 3.6s 3.6 MW V120 5M M5000 E112

Rated
Power 2MW 3.6MW 3.6MW 4.5MW 5MW 5MW 4.5-6MW

Gearbox Gearless 3-Stage 3-Stage 3-Stage 3-Stage 1-Stage Gearless

High
Squirrel Electrical
Generator PMSG DFIG Voltage DFIG PMSG
Cage IG Excited SG
DFIG

4-quadrant 4-quadrant Fully 4-quadrant 4-quadrant Intermediate

Frequency
Converter IGCT IGBT Automated IGBT GTO Circuit
Converter
Converter Converter Converter Converter Converter Converter

Rotor
9 Variable speed • Brushes, high maintenance
70m 104m 107m 120m 126m 116m 114m
Diameter 9 Low converter rating • Large gearbox, high cost and
9 Active and reactive power maintenance
Source: OffshoreWind.de control • Limited grid connection performance
IEEE PES/IAS Toronto Chapter Seminar 119 IEEE PES/IAS Toronto Chapter Seminar 120
Bin Wu 10/2006 Bin Wu 10/2006

20
 Topic 6 Applications in Wind Energy Industry Topic 6 Applications in Wind Energy Industry
Direct Drive Synchronous Generator (SG) Direct Drive Synchronous Generator (SG)
• Conventional SG • Examples: Enercon E112 (4.5-6MW)

3765A/phase

690V/500kW

Source: Enercon

• Full power converter

9Direct driven, no gear box. E112
• Excitation circuit
9Completely decoupled from grid.
• Brushes

IEEE PES/IAS Toronto Chapter Seminar 121 IEEE PES/IAS Toronto Chapter Seminar 122
Bin Wu 10/2006 Bin Wu 10/2006

Topic 6 Applications in Wind Energy Industry Topic 6 Applications in Wind Energy Industry
Direct Drive Synchronous Generator (SG) Direct Drive Synchronous Generator (SG)
• Permanent Magnet SG • Examples - Multibrid M5000 (5MW PMSG)

Source: Alstom

Converter: ALSPA VDM7000

9 Direct driven, no gear box • Full power Converter
9 Completely decoupled from grid • Possible de-magnetization
• No flux control capability
IEEE PES/IAS Toronto Chapter Seminar 123 IEEE PES/IAS Toronto Chapter Seminar 124
Bin Wu 10/2006 Bin Wu 10/2006

Topic 6 Applications in Wind Energy Industry

Ryerson LEDAR – WindTech Topic 7
An application has been submitted to CFI to establish
Applications in Power/Utility Industry
an advanced Wind Technology research facility at Ryerson

• FACTS - Flexible AC Transmission Systems

- Static Synchronous Compensator (STATCOM)
- Static Synchronous Series Compensator (SSSC)
- Unified Power Flow Controller (UPFC)

• Custom Power Devices

- Dynamic Voltage Restorer (DVR)
- Distribution Static Synchronous Compensator (D-STATCOM)
- Active Power Filter (APF)

• HVDC – High Voltage DC Transmission

IEEE PES/IAS Toronto Chapter Seminar 125 IEEE PES/IAS Toronto Chapter Seminar 126
Bin Wu 10/2006 Bin Wu 10/2006

21
 Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry
FACTS - STATCOM FACTS - STATCOM
• Configuration • Example – 100MVA GCT STATCOM

Source: Toshiba Electric Source: Mitsubishi Electric

Purpose: To provide reactive power for voltage regulation Talega ±100 MVA, 138 kV STATCOM system

IEEE PES/IAS Toronto Chapter Seminar 127 IEEE PES/IAS Toronto Chapter Seminar 128
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry

FACTS - STATCOM FACTS - STATCOM
• Example – 50MVA GTO STATCOM • STATCOM Installation in USA
Control
Year Customer Location Voltage Remarks Supplier
range
Sullivan
Tennessee Substation Westinghouse
GTO thyristor
1995 Valley (Johnson 161kV ±100MVar Electric
valves
Authority (TVA) City, Corporation
Tennessee)
American Eagle Pass
Back to Back
2000 Electric Power Station 138kV ±36MVar ABB
scheme
(AEP) (Texas)
Essex
Vermont station -41 to GCT based
2001 115kV Mitsubishi
Electric Power (Burlington, +133MVar STATCOM
Vermont)
Laredo and
Central &
Brownsville
_ South West _ ±150MVar _ W-Siemens
stations
Services
(Texas)
Source: Oak Ridge National Laboratory
Source: Toshiba Electric

IEEE PES/IAS Toronto Chapter Seminar 129 IEEE PES/IAS Toronto Chapter Seminar 130
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry

FACTS - STATCOM FACTS − SSSC
• STATCOM Installation in USA • Operating Principle

Control
Year Customer Location Voltage Remarks Supplier
range
Talega
San Diego Gas
station GCT based
2003 & Electric 138kV ±100MVar Mitsubishi
(Southern STATCOM
(SDG&E)
California)

Glenbrook
Northeast station
2003 115kV ±150MVar _ Areva (Alstom)
Utilities (NU) (Hartford,
Connecticut)
¾ Emulate a variable inductor or a capacitor in series with the transmission
-80 to IGBT based line by generating a voltage in quadrature with the line current
2004 Austin Energy Holly (Texas) 138kV ABB
+110MVar STATCOM

Source: Oak Ridge National Laboratory ¾ The emulated inductive or capacitive reactance regulates the effective line
reactance between its two ends

IEEE PES/IAS Toronto Chapter Seminar 131 IEEE PES/IAS Toronto Chapter Seminar 132
Bin Wu 10/2006 Bin Wu 10/2006

22
 Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry
FACTS − UPFC FACTS − UPFC
• Operating Principle • Example – 160MVA 138kV UPFC (GTO Based)
Series Transformer Shunt Transformer
Series Transformer

¾ Combines STATCOM and SSSC which are coupled via

a common DC link

¾ Allows bi-directional flow of real power between the STATCOM and

SSSC without external energy source Shunt Transformer UPFC building
GTO valve hall
UPFC Equipment
¾ Controls power flow, voltage and power factor, allowing optimal
use of existing lines
Source: AEP Inez UPFC Project

IEEE PES/IAS Toronto Chapter Seminar 133 IEEE PES/IAS Toronto Chapter Seminar 134
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry

FACTS - UPFC Custom Power Devices
• List of UPFC in operation • Overview D-STATCOM:
Distribution Static
Synchronous
Compensator
Year Voltage
Country Capacity Place DVR:
Installed level Dynamic Voltage
Restorer
AEP Inez
1998 USA ±320MVA 138KV Active Filters
substation
SSTS:
Solid-State Transfer
South Gangjin
2003 80MVA 154KV Switch
Korea substation
SSCB:
Source: Asian Institute of Technology Solid-State Circuit
Breaker

BESS:
Battery Energy
Source: ABB Storage System

IEEE PES/IAS Toronto Chapter Seminar 135 IEEE PES/IAS Toronto Chapter Seminar 136
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry

Custom Power Device − DVR Custom Power Device − DVR
• Operating Principle • Example – 4MW 21kV DVR (IGCT Based)

Compensation capacity:
3-phase: 38% voltage sag
1-phase: 50% voltage sag

Compensates voltage sags by injecting a voltage

in series with the incoming voltage
Source: ABB

IEEE PES/IAS Toronto Chapter Seminar 137 IEEE PES/IAS Toronto Chapter Seminar 138
Bin Wu 10/2006 Bin Wu 10/2006

23
 Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry
Custom Power Device − DSTATCOM Custom Power Device − DSTATCOM
• Operating Principle • Example – 5MVA, 4.16kV D-STATCOM (IGBT Based)

¾ Similar to its larger STATCOM cousin, but having greater a speed and
flexibility due to faster switching devices at lower power distribution level
Source: Mitsubishi Electric
¾ Provides power quality solutions: flicker suppression, voltage and
system stabilization, power factor correction etc.

IEEE PES/IAS Toronto Chapter Seminar 139 IEEE PES/IAS Toronto Chapter Seminar 140
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power/Utility Industry Topic 7 Applications in Power/Utility Industry

HVDC HVDC
• Overview • Overview

Main Benefits of HVDC

• Long distance
• Network stability
• Low losses
• Environmental concerns
Source: ABB

IEEE PES/IAS Toronto Chapter Seminar 141 IEEE PES/IAS Toronto Chapter Seminar 142
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power /Utility Industry Topic 7 Applications in Power /Utility Industry
HVDC HVDC
• Example 1 – HVDC Transmission Québec - New England • Example 1 – HVDC Transmission Québec - New England

Main data

Commissioning year: 1990 -

1992

Power rating: 2000 MW

DC voltage: ±450 kV

Length of overhead 1,480 km

DC line:

Main reason for choosing HVDC:

Long distance, asynchronous
networks Source: ABB

Source: ABB Radisson Converter Station

IEEE PES/IAS Toronto Chapter Seminar 143 IEEE PES/IAS Toronto Chapter Seminar 144
Bin Wu 10/2006 Bin Wu 10/2006

24
 Topic 7 Applications in Power /Utility Industry Topic 7 Applications in Power /Utility Industry
HVDC HVDC
• Example 2 – HVDC Project in China • Example 2 – HVDC Project in China
3000MW HVDC from Three Gorges to Guangdong

4 HVDC Links

Source: ABB Source: ABB

IEEE PES/IAS Toronto Chapter Seminar 145 IEEE PES/IAS Toronto Chapter Seminar 146
Bin Wu 10/2006 Bin Wu 10/2006

Topic 7 Applications in Power /Utility Industry

HVDC High-Power Converters and
• Example 2 – HVDC Project in China Applications in Drive/Wind/Power Industries

3000MW HVDC from Three Gorges to Guangdong

Source: ABB
Overview Thyristor valve hall

Length of overhead DC line: 940 km

IEEE PES/IAS Toronto Chapter Seminar 147 IEEE PES/IAS Toronto Chapter Seminar 148
Bin Wu 10/2006 Bin Wu 10/2006

25