T E C H N I C A L D AT A S H E E T
SU-8 2000 Permanent Negative Epoxy Photoresist
SU-8 2000.5, SU-8 2002, SU-8 2005, SU-8 2007, SU-8 2010 and SU-8 2015
Description
SU-8 2000 is a high contrast, epoxy based photore-
sist designed for micromachining and other micro-
electronic applications, where a thick, chemically
and thermally stable image is desired. SU-8 2000 is
an improved formulation of SU-8, which has been
widely used by MEMS producers for many years.
The use of a faster drying, more polar solvent system
results in improved coating quality and increases
process throughput. SU-8 2000 is available in twelve
25 µm features in 125 µm thick SU-8 2000 coating
standard viscosities. Film thicknesses of 0.5 to >200
microns can be achieved with a single coat process.
The exposed and subsequently thermally cross- Process Flow
linked portions of the film are rendered insoluble to
liquid developers. SU-8 2000 has excellent imaging Substrate Pretreat
characteristics and is capable of producing very high
aspect ratio structures. SU-8 2000 has very high
optical transmission above 360 nm, which makes it Coat
ideally suited for imaging near vertical sidewalls in
very thick films. SU-8 2000 is best suited for perma-
Edge Bead Removal (EBR)
nent applications where it is imaged, cured and left
on the device.
Soft Bake
Features
• High aspect ratio imaging
• 0.5 to > 200 μm film thickness in a single coat Expose
• Improved coating properties
• Faster drying for increased throughput
• i-Line (365 nm) and broadband processing Post Exposure Bake (PEB)
• Vertical sidewalls
Develop
Rinse and Dry
Hard Bake Removal
(cure) optional optional
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PROCESSING GUIDELINES
SU-8 2000 photoresist are exposed with i-Lineor
broadband tools. SU-8 2000 may also be exposed
with e-beam or X-ray radiation. Upon exposure,
cross-linking proceeds in two steps (1) formation of a
strong acid during the exposure step, followed by
(2) acid-catalyzed, thermally driven epoxy cross-
linking during the post exposure bake (PEB) step.
A normal process is: spin coat, soft bake, expose,
PEB, followed by develop. A controlled hard bake
can be used to further cross-link the imaged SU-8
2000 structures when they will remain as part of the
device. The entire process should be optimized for Figure 1a. SU-8 2000 Thickness vs. Spin Speed
the specific application. The baseline information
presented here is meant to be used as a starting
point for determining a process.
Substrate Preparation
To obtain maximum process reliability, substrates
should be clean and dry prior to applying SU-8 2000
resist. For best results, substrates should be cleaned
with a piranha wet etch (using H2SO4 & H2O2) fol-
lowed by a deionized water rinse. Substrates may
also be cleaned using reactive ion etching (RIE) or
any barrel asher supplied with oxygen. Adhesion
promoters are typically not required. For applications
that include electroplating, a pre-treatment of the
substrate with HMDS is recommended.
Figure 1b. SU-8 2000 Thickness vs. Spin Speed
Coat
SU-8 2000 resists are available in twelve standard
viscosities. This processing guideline document
addresses six products: SU-8 2000.5, SU-8 2002,
SU-8 2005, SU-8 2007, SU-8 2010 and SU-8 2015.
SU-8 2000 % Solids Viscosity (cSt) Density (g/ml)
Figures 1a and 1b provide the information required
to select the appropriate SU-8 2000 resist and spin 2000.5 14.3 2.49 1.070
conditions to achieve the desired film thickness. 2002 29.00 7.5 1.123
2005 45.00 45 1.164
Recommended Program 2007 52.50 140 1.175
(1) Dispense 1 ml of resist for each inch (25 mm) of 2010 58.00 380 1.187
substrate diameter. 2015 63.45 1250 1.200
(2) Spin at 500 rpm for 5–10 seconds with accelera-
tion of 100 rpm/second.
Table 1. SU-8 2000 Viscosity
(3) Spin at 2000 rpm for 30 seconds with accelera-
tion of 300 rpm/second.
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Edge Bead Removal (EBR) Optical Parameters
During the spin coat process step, a build up of The dispersion curve and Cauchy coefficients are
photoresist may occur on the edge of the substrate. shown in Figure 3. This information is useful for film
In order to minimize contamination of the hotplate, thickness measurements based on ellipsometry and
this thick bead should be removed. This can be other optical measurements.
accomplished by using a small stream of solvent
(Kayaku Advanced Materials’ EBR PG) at the edge of
the wafer either at the top or from the bottom. Most
automated spin coaters now have this feature and
can be programmed to do this automatically.
By removing any edge bead, the photomask can be
placed into close contact with the wafer, resulting in
improved resolution and aspect ratio.
Soft Bake
A level hotplate with good thermal control and
uniformity is recommended for use during the soft
bake step of the process. Convection ovens are not
recommended. During convection oven baking, a Figure 3. Cauchy Coefficients
skin may form on the resist. This skin can inhibit the Exposure
evolution of solvent, resulting in incomplete drying
of the film and/or extended bake times. Table 2 To obtain vertical sidewalls in the SU-8 2000
shows the recommended soft bake temperatures resist, we recommend the use of a long pass filter
and times for the various SU-8 2000 products at to eliminate UV radiation below 350 nm. With the
selected film thicknesses. recommended filter (PL- 360-LP) from Omega
Optical (www.omegafilters.com) an increase in
Note: To optimize the baking times/conditions, re- exposure time of approximately 40% is required
move the wafer from the hotplate after the prescribed to reach the optimum exposure dose.
time and allow it to cool to room temperature. Then,
return the wafer to the hotplate. If the film wrinkles, Note: With optimal exposure, a visible latent image
leave the wafer on the hotplate for a few more min- will be seen in the film within 5–15 seconds after
utes. Repeat the cool-down and heat-up cycle until being placed on the PEB hotplate and not before. An
wrinkles are no longer seen in the film. exposure matrix experiment should be performed to
determine the optimum dosage.
THICKNESS SOFT BAKE TIMES
microns minutes @ 95ºC THICKNESS EXPOSURE ENERGY
microns mJ/cm2
0.5–2 1
3–5 2 0.5–2 60–180
6–15 2–3 3–5 90–105
16–25 3–4 6–15 110–140
26–40 4–5 16–25 140–150
26–40 150–160
Table 2. Soft Bake Times
Table 3. Exposure Dose
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T E C H N I C A L D AT A S H E E T
approximate, since actual dissolution rates can vary
SUBSTRATE RELATIVE DOSE
widely as a function of agitation.
Silicon 1X
Glass 1.5X Note: The use of an ultrasonic or megasonic bath
Pyrex 1.5X may be helpful when developing out via or hole
Indium Tin Oxide 1.5X patterns or structures with tight pitch.
Silicon Nitride 1.5–2X
Gold 1.5–2X
Aluminum 1.5–2X
Nickel Iron 1.5–2X
Copper 1.5–2X THICKNESS DEVELOPMENT TIME
Nickel 1.5–2X microns minutes
Titanium 1.5–2X
0.5–2 1
Table 4. Exposure Doses for Various Substrates
3–5 1
6–15 2–3
Post Exposure Bake (PEB) 16–25 3–4
26–40 4–5
PEB should take place directly after exposure. Table
5 shows the recommended times and temperatures. Table 6. Development Times for SU-8 Developer
Note: After 1 minute of PEB at 95°C, an image of the Rinse and Dry
mask should be visible in the SU-8 2000 photoresist
coating. If no visible latent image is seen during or When using SU-8 developer, spray and wash the
after PEB this means that there was insufficient expo- developed image with fresh solution for approxi-
sure, heating or both. mately 10 seconds. Air dry with filtered, pressurized
air or nitrogen.
THICKNESS POST EXPOSURE BAKE TIME
microns minutes @ 95ºC
0.5–2 1–2
3–5 2–3
6–15 3–4
16–25 4–5
26–40 5–6
Table 5. Post Exposure Bake Times
Development
SU-8 2000 photoresist has been designed for use in
immersion, spray or spray-puddle processes with
Kayaku Advanced Materials’ SU-8 developer. Other
solvent based developers such as ethyl lactate and
diacetone alcohol may also be used. Strong agitation
is recommended when developing high aspect ratio
and/or thick film structures. The recommended
development times for immersion processes are
given in Table 6. These development times are
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Physical Properties Hard Bake (cure)
(Approximate values) SU-8 2000 has good mechanical properties. Howev-
er, for applications where the imaged resist is to be
Adhesion Strength (MPa) Silicon/Glass/Glass&HMDS 38/35/35 left as part of the final device, a hard bake can be
incorporated into the process. This is generally only
Glass Transition Temperature (Tg °C), tan δ peak 210
required if the final device or part is to be subject
Thermal Stability (°C @ 5% wt. loss) 315
to thermal processing during regular operation. A
Thermal Conductivity (W/m.K) 0.3
hard bake or final cure step is added to ensure that
Coefficient of Thermal Expansion (CTE ppm) 52
SU-8 2000 properties do not change in actual use.
Tensile Strength (MPa) 60 SU-8 2000 is a thermal resin and as such its prop-
Elongation at break (ξb %) 6.5 erties can continue to change when exposed to a
Young’s Modulus (GPa) 2.0 higher temperature than previously encountered.
We recommend using a final bake temperature 10°C
Dielectric Constant @ 10MHz 3.2 higher than the maximum expected device operat-
ing temperature. Depending on the degree of cure
Water Absorption (% 85ºC/85 RH) 0.65 required, a bake temperature in the range of 150°C
to 250°C and for a time between 5 and 30 minutes is
Table 7. Physical Propeties typically used.
Note: The hard bake step is also useful for annealing
Optical Properties any surface cracks that may be evident after develop-
ment. The recommended step is to bake at 150°C
for a couple of minutes. This applies to all film
thicknesses.
Removal
SU-8 2000 has been designed as a permanent,
highly crosslinked epoxy material and it is extremely
difficult to remove it with conventional solvent-based
resist strippers. Kayaku Advanced Materials’ Remov-
er PG will swell and lift off minimally crosslinked SU-8
2000. However, if OmniCoat (30-100 nm) has been
applied, immersion in Remover PG can effect a clean
and thorough lift-off of the SU-8 2000 material. Fully
cured or hard baked SU-8 2000 cannot be removed
without the use of OmniCoat.
Figure 4. Optical Transmittance
To remove minimally crosslinked SU-8 2000, or when
Process conditions for Figure 4 using Omnicoat: Heat the Remover PG bath to 50-
Soft Bake: 5 minutes at 95°C 80°C and immerse the substrates for 30-90 minutes.
Exposure: 180 mJ/cm2 Actual strip time will depend on resist thickness and
Hard Bake: 30 minutes at 300°C crosslink density. For more information on Kayaku
Advanced Materials’ Omnicoat and Remover PG,
please see the relevant product data sheets.
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To re-work fully crosslinked SU-8 2000: Wafers can determine the suitability of any of Kayaku Advanced
be stripped using oxidizing acid solutions such as Materials, Inc. products for any particular purpose.
piranha etch, plasma ash, RIE, laser ablation and This information may be subject to revision as new
pyrolysis. knowledge and experience becomes available, but
Kayaku Advanced Materials, Inc. assumes no obliga-
PLASMA REMOVAL tion to update or revise any data previously furnished
RIE 200W, 80 sccm O2, 8 sccm CF4, 100 mTorr, to a customer; and if currency of data becomes an
10°C. For more information, refer to the SU-8 / issue, the customer should contact Kayaku Advanced
KMPR® Removal applications note on the website Materials, Inc. requesting updates. Since Kayaku Ad-
www.kayakuAM.com. Also see www.r3t.de or vanced Materials, Inc. cannot anticipate all variations
www.pvatepla.com for microwave plasma tools in actual end uses or in actual end-use conditions,
for high throughput without damaging other it makes no claims, representations or warranties,
microstructures. express or implied including, without limitation any
warranty of merchantability or fitness for a particular
Storage purpose; and the customer waives all of the same.
Kayaku Advanced Materials, Inc. expressly disclaims
Store SU-8 2000 resists upright and in tightly closed any responsibility or liability and assumes no respon-
containers in a cool, dry environment away from sibility or liability in connection with any use of this
direct sunlight at a temperature of 40-70°F (4-21°C). information including, without limitation, any use,
Store away from light, acids, heat and sources of handling, storage or possession of any Kayaku Ad-
ignition. Shelf life is thirteen months from date of vanced Materials, Inc. products, or the application of
manufacture. any process described herein or the results desired
or anything relating to the design of the customer’s
Disposal products. Nothing in this publication is to be consid-
The material and its container must be disposed ered as a license to operate under or a recommenda-
in accordance with all local, state, federal and/or tion to infringe any patent right.
international regulations.
Handling
Consult Safety Data Sheet (SDS) for details on the
handling procedures and product hazards prior to
use. If you have any questions regarding handling
precautions or product hazards, please email
[email protected].
Disclaimer
Notwithstanding anything to the contrary contained
in any sales documentation, e.g., purchase order
forms, all sales are made on the following conditions:
All information contained in any Kayaku Advanced
Materials, Inc. product literature reflects our current
knowledge on the subject and is, we believe, re-
liable. It is offered solely to provide possible sug-
gestions for the customer’s own experiments and is
not a substitute for any testing by the customer to
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