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2sb681 - Savantic PNP Cce Sa7000 2025

The document provides the product specification for the 2SB681 Silicon PNP Power Transistor, highlighting its high power dissipation and suitability for power amplifier applications. It includes detailed pin configurations, absolute maximum ratings, and key electrical characteristics. The transistor is designed for high-power audio frequency amplifier output stages and features a TO-3 package.

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AguinaldoCarrer
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9 views3 pages

2sb681 - Savantic PNP Cce Sa7000 2025

The document provides the product specification for the 2SB681 Silicon PNP Power Transistor, highlighting its high power dissipation and suitability for power amplifier applications. It includes detailed pin configurations, absolute maximum ratings, and key electrical characteristics. The transistor is designed for high-power audio frequency amplifier output stages and features a TO-3 package.

Uploaded by

AguinaldoCarrer
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com 2SB681

DESCRIPTION
·With TO-3 package
·High power dissipation

APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage

PINNING(see Fig.2)

PIN DESCRIPTION

1 Base

2 Emitter
Fig.1 simplified outline (TO-3) and symbol
3 Collector

Absolute maximum ratings(Ta= )


SYMBOL PARAMETER CONDITIONS VALUE UNIT

VCBO Collector-base voltage Open emitter -150 V

VCEO Collector-emitter voltage Open base -150 V

VEBO Emitter-base voltage Open collector -5 V

IC Collector current -12 A

ICM Collector current-peak -20 A

PC Collector power dissipation TC=25 100 W

Tj Junction temperature 150

Tstg Storage temperature -40~150


SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SB681

CHARACTERISTICS
Tj=25 unless otherwise specified

SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT

V(BR)CEO Collector-emitter breakdown voltage IC=-30mA ;IB=0 -150 V

V(BR)CBO Collector-emitter breakdown voltage IC=-1mA ;IE=0 -150 V

V(BR)EBO Emitter-base breakdown voltage IE=-1mA ;IC=0 -5 V

VCEsat Collector-emitter saturation voltage IC=-6A; IB=-0.6A -2.5 V

VBE Base-emitter on voltage IC=-1A ; VCE=-5V -1.5 V

ICBO Collector cut-off current VCB=-150V; IE=0 -0.1 mA

IEBO Emitter cut-off current VEB=-5V; IC=0 -0.1 mA

hFE-1 DC current gain IC=-1A ; VCE=-5V 40 140

hFE-2 DC current gain IC=-5A ; VCE=-5V 20

fT Transition frequency IC=-1A ; VCE=-5V 13 MHz

hFE-1 Classifications

R O

40-80 70-140

2
SavantIC Semiconductor Product Specification

Silicon PNP Power Transistors


www.DataSheet4U.com
2SB681

PACKAGE OUTLINE

Fig.2 outline dimensions (unindicated tolerance:±0.1mm)

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