HYG053N10NS1P/B

N-Channel Enhancement Mode MOSFET

Feature Pin Description

 100V/120A
RDS(ON)=4.8 mΩ(typ.)@VGS = 10V
 100% Avalanche Tested
 Reliable and Rugged
 Halogen-Free Devices Available
(RoHS Compliant)

TO-220FB-3L TO-263-2L

Applications

 Switching application
 Power management for inverter systems
 Battery management

N-Channel MOSFET

Ordering and Marking Information

Package Code
P B P :TO-220FB-3L B:TO-263-2L
G053N10 G053N10
Date Code
XYMXXXXXX XYMXXXXXX
XYMXXXXXX

Note: HUAYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate Termi-
Nation finish;which are fully compliant with RoHS. HUAYI lead-free products meet or exceed the lead-Free require-
ments of IPC/JEDEC J-STD-020 for MSL classification at lead-free peak reflow temperature. HUAYI defines “Green”
to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight in homogeneous
material and total of Br and Cl does not exceed 1500ppm by weight).

HUAYI reserves the right to make changes, corrections, enhancements, modifications, and improvements to this pr
-oduct and/or to this document at any time without notice.

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Absolute Maximum Ratings

Symbol Parameter Rating Unit

Common Ratings (Tc=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage 100 V
VGSS Gate-Source Voltage ±20 V
TJ Junction Temperature Range -55 to 175 °C
TSTG Storage Temperature Range -55 to 175 °C
IS Source Current-Continuous(Body Diode) Tc=25°C 120 A
Mounted on Large Heat Sink
IDM Pulsed Drain Current * Tc=25°C 360 A
Tc=25°C 120 A
ID Continuous Drain Current
Tc=100°C 84.8 A
Tc=25°C 187.5 W
PD Maximum Power Dissipation
Tc=100°C 93.7 W
RθJC Thermal Resistance, Junction-to-Case 0.8 °C/W
RθJA Thermal Resistance, Junction-to-Ambient ** 62.5 °C/W
EAS SinglePulsed-Avalanche Energy *** L=0.3mH 360 mJ

Note: * Repetitive rating；pulse width limited by max.junction temperature.

** Surface mounted on 1in2 FR-4 board.
*** Limited by TJmax , starting TJ=25°C, L = 0.3mH, RG= 25Ω, VGS =10V.

Electrical Characteristics(Tc =25°C Unless Otherwise Noted)

HYG053N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V,IDS= 250μA 100 - - V
VDS=100V,VGS=0V - - 1 μA
IDSS Drain-to-Source Leakage Current
TJ=125°C - - 50 μA
VGS(th) Gate Threshold Voltage VDS=VGS, IDS= 250μA 2 3 4 V
IGSS Gate-Source Leakage Current VGS=±20V,VDS=0V - - ±100 nA
RDS(ON) Drain-Source On-State Resistance VGS= 10V,IDS=50A - 4.8 5.5 mΩ
Diode Characteristics
VSD Diode Forward Voltage ISD=50A,VGS=0V - 0.9 1.2 V
trr Reverse Recovery Time - 60 - ns
ISD=50A,dISD/dt=100A/μs
Qrr Reverse Recovery Charge - 106 - nC

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Electrical Characteristics (Cont.) (Tc =25°C Unless Otherwise Noted)

HYG053N10NS1
Symbol Parameter Test Conditions Unit
Min Typ. Max
Dynamic Characteristics
RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 3.4 - Ω
Ciss Input Capacitance VGS=0V, - 4036 -
Coss Output Capacitance VDS= 25V, - 1410 - pF
Crss Reverse Transfer Capacitance Frequency=1.0MHz - 76 -
td(ON) Turn-on Delay Time - 19 -
Tr Turn-on Rise Time VDD= 50V,RG=4.0Ω, - 93 -
ns
td(OFF) Turn-off Delay Time IDS= 50A,VGS= 10V - 52 -
Tf Turn-off Fall Time - 86 -
Gate Charge Characteristics
Qg Total Gate Charge - 70 -
Qgs Gate-Source Charge VDS =80V, VGS=10V,IDs=50A - 24 - nC
Qgd Gate-Drain Charge - 20 -

Note: *Pulse test，pulse width ≤ 300us，duty cycle ≤ 2%

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Typical Operating Characteristics

0Figure 1: Power Dissipation Figure 2: Drain Current

Power Dissipation (w)

ID-Drain Current(A)
Tc-Case Temperature(℃) Tc-Case Temperature(℃)

Figure 3: Safe Operation Area Figure 4: Thermal Transient Impedance

Normalized Transient
Impedance
ID-Drain Current(A)

Thermal
Zθjc

VDS-Drain-Source Voltage(V) Maximum Effective Transient Thermal

Impedance, Junction-to-Case

Figure 5: Output Characteristics Figure 6: Drain-Source On Resistance

RDS(ON)-ON-Resistance(mΩ)
ID-Drain Current(A)

VDS-Drain-Source Voltage (V) ID-Drain Current(A)

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Typical Operating Characteristics(Cont.)

Figure 7: On-Resistance vs. Temperature Figure 8: Source-Drain Diode Forward

Normalized On-Resistance

IS-Source Current (A)

Tj-Junction Temperature (℃) VSD-Source-Drain Voltage(V)

Figure 9: Capacitance Characteristics Figure 10: Gate Charge Characteristics

12
VGS-Gate-Source Voltage (V)
C-Capacitance(pF)

VDS-Drain-Source Voltage (V) QG-Gate Charge (nC)

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Avalanche Test Circuit

Switching Time Test Circuit

Gate Charge Test Circuit

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Device Per Unit

Package Type Unit Quantity

TO-220FB-3L Tube 50
TO-263-2L Tube 50
TO-263-2L Reel 800
Package Information
TO-220FB-3L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 4.37 4.57 4.77
A1 1.25 1.30 1.45
A2 2.20 2.40 2.60
b 0.70 0.80 0.95
b2 1.17 1.27 1.47
c 0.40 0.50 0.65
D 15.10 15.60 16.10
D1 8.80 9.10 9.40
D2 5.50 - -
E 9.70 10.00 10.30
E3 7.00 - -
e 2.54 BSC
e1 5.08 BSC
H1 6.25 6.50 6.85
L 12.75 13.50 13.80
L1 - 3.10 3.40
ΦP 3.40 3.60 3.80
Q 2.60 2.80 3.00

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Package Information

TO-263-2L

COMMON DIMENSIONS
mm
SYMBOL
MIN NOM MAX
A 4.37 4.57 4.77
A1 1.22 1.27 1.42
A2 2.49 2.69 2.89
A3 0 0.13 0.25
b 0.7 0.81 0.96
b1 1.17 1.27 1.47
c 0.3 0.38 0.53
D1 8.5 8.7 8.9
D4 6.6 - -
E 9.86 10.16 10.36
E5 7.06 - -
e 2.54 BSC
H 14.7 15.1 15.5
H2 1.07 1.27 1.47
L 2 2.3 2.6
L1 1.4 1.55 1.7
L4 0.25 BSC
θ 0° 5° 9°

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Classification Profile

Classification Reflow Profiles

Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly

Preheat & Soak
100 °C 150 °C
Temperature min (Tsmin)
150 °C 200 °C
Temperature max (Tsmax)
60-120 seconds 60-120 seconds
Time (Tsmin to Tsmax) (ts)
Average ramp-up rate
3 °C/second max. 3°C/second max.
(Tsmaxto TP)
Liquidous temperature (TL) 183 °C 217 °C
Time at liquidous (tL) 60-150 seconds 60-150 seconds
Peak package body Temperature
See Classification Temp in table 1 SeeClassification Tempin table 2
(Tp)*
Time (tP)** within 5°C of the specified
20** seconds 30** seconds
classification temperature (Tc)
Average ramp-down rate (Tpto Tsmax) 6 °C/second max. 6 °C/second max.
Time 25°C to peak temperature 6 minutes max. 8 minutes max.
*Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.

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Table 1.SnPb Eutectic Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³

Thickness <350 ≥350
＜2.5 mm 235 °C 220 °C
≥2.5 mm 220 °C 220 °C

Table 2.Pb-free Process – Classification Temperatures (Tc)

Package Volume mm³ Volume mm³ Volume mm³

Thickness <350 350-2000 ≥2000
<1.6 mm 260 °C 260 °C 260 °C
1.6 mm – 2.5 mm 260 °C 250 °C 245 °C
≥2.5 mm 250 °C 245 °C 245 °C

Reliability Test Program

Test item Method Description

SOLDERABILITY JESD-22, B102 5 Sec, 245°C
HTRB JESD-22, A108 168Hrs//500Hrs/1000Hrs, Bias @ 150°C
HTGB JESD-22, A108 168 Hrs/500Hrs/1000Hrs, Vgs100% @ 150°C
PCT JESD-22, A102 96 Hrs, 100%RH, 2atm, 121°C
TCT JESD-22, A104 500 Cycles, -55°C~150°C

Customer Service
Worldwide Sales and Service: [email protected]
Technical Support:[email protected]
Huayi Microelectronics Co., Ltd.
No.8928,Shangji Road,Economic and Technological Development Zone,Xi'an,China
TEL: (86-029) 86685706
FAX: (86-029) 86685705
E-mail: [email protected]
Web net: www.hymexa.com

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