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Be - First Year Fe Engineering - Semester 2 - 2024 - October - Basic Electronics Engineering Pattern 2019

This document is an examination paper for Basic Electronics Engineering with a total of 4 questions. Candidates are instructed to answer specific questions and can assume suitable data if necessary. The paper covers topics such as P-N junction diodes, rectifiers, BJTs, and operational amplifiers.

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24 views1 page

Be - First Year Fe Engineering - Semester 2 - 2024 - October - Basic Electronics Engineering Pattern 2019

This document is an examination paper for Basic Electronics Engineering with a total of 4 questions. Candidates are instructed to answer specific questions and can assume suitable data if necessary. The paper covers topics such as P-N junction diodes, rectifiers, BJTs, and operational amplifiers.

Uploaded by

fs017575
Copyright
© © All Rights Reserved
We take content rights seriously. If you suspect this is your content, claim it here.
Available Formats
Download as PDF, TXT or read online on Scribd
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Total No. of Questions : 4] SEAT No.

8
23
PC378 [Total No. of Pages : 1

ic-
[6358]-109

tat
F.E. (Insem)

5s
BASIC ELECTRONICS ENGINEERING

4:2
(2019 Pattern) (Semester - I) (104010)

02 91
3:4
Time : 1 Hour] [Max. Marks : 30

0
41
0/1 13
Instructions to the candidates:
1) Answer Q.1 or Q.2, Q.3 or Q.4.
0
2) Assume suitable data if necessary.
0/2
.23 GP
E

Q1) a) Explain forward biasing of P-N Junction diode with its V - I characteristics.
81

8
C

23
[5]

ic-
b) Compare half wave, center tapped transformer full wave rectifier and
16

tat
Bridge full wave rectifier. [5]
8.2

5s
c) Draw and explain voltage regulator circuit using zener diode. [5]
.24

4:2
OR
91
49

3:4
Q2) a) What is depletion region? Explain the effect of forward biasing and reverse
30

biasing of P-N Junction diode on depletion region. [5]


41

b) For Bridge full wave rectifier, applied input voltage is 10Sin wt, calculate
01
02

average output voltage, RMS voltage and PIV rating of diode used. [5]
0/2
GP

c) Explain principle of operation and construction of photodiode. List its


0/1

applications. [5]
CE
81

8
23
.23

Q3) a) Explain BJT as an amplifier in common Emitter configuration. [5]


ic-
16

b) Explain construction and operation of N-channel EMOSFET. [5]


tat
8.2

5s

c) For an inverting amplifier using Op-Amp if Rf = 10k, R1 = 1k and


.24

Vcc = ± 15V calculate ‘Vo’ for Vin = 100 mv. [5]


4:2
91

Comment on the phase relation between input and output voltage.


49

3:4

OR
30
41

Q4) a) Explain regions of operation of transistor with respect to biasing


01
02

conditions. For BJT, if JB = 10 A and IE = 1mA [5]


0/2

Calculate value of Ic and (Beta).


GP
0/1

b) Compare BJT and MOSFET. [5]


CE
81

c) Draw and explain Op-amp as inverting amplifier. Write the expression


for voltage gain. [5]
.23
16
8.2

  
.24
49

[6358]-109 1

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